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GY50NC60WD

GY50NC60WD

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    GY50NC60WD - N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT - STMicroelectronics

  • 数据手册
  • 价格&库存
GY50NC60WD 数据手册
STGY50NC60WD N-channel 600V - 50A - Max247 Very fast PowerMESH™ IGBT PRELIMINARY DATA General features Type STGY50NC60WD ■ ■ ■ VCES 600V IC VCE(sat) (max)@25°C @100°C < 2.5V 50A High frequency operation Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode Max247 2 1 3 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Internal schematic diagram Applications ■ ■ ■ High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers, UPS Order codes Part number STGY50NC60WD Marking GY50NC60WD Package Max247 Packaging Tube October 2006 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STGY50NC60WD Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STGY50NC60WD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICM (2) IF VGE PTOT Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Diode RMS forward current at TC = 25°C Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 80 50 190 30 ±20 260 Unit V A A A A V W 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Rthj-case Rthj-case Rthj-amb TL (1) Thermal resistance Parameter Thermal resistance junction-case max IGBT Thermal resistance junction-case max diode Thermal resistance junction-ambient max Maximum lead temperature for soldeing purpose Value 0.48 1.5 50 300 Unit °C/W °C/W °C/W °C 1. 1.6mm from case, for 10sec 3/11 Electrical characteristics STGY50NC60WD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250µA VGE= Max rating,TC= 25°C VGE= Max rating,TC= 125°C VGE= ±20V , VCE= 0 VCE = 15V, IC= 20A 5.75 250 1 ±100 20 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 2 Min. Typ. 4700 410 90 155 32.4 82.2 Max. Unit pF pF pF nC nC nC 4/11 STGY50NC60WD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 40A , RG= 10Ω VGE= 15V, Figure 3 VCC = 390V, IC = 40A , RG= 10Ω VGE= 15V, Tj = 125°C Figure 3 VCC = 390V, IC = 40A RG= 10Ω VGE= 15V, , Figure 3 VCC = 390V, IC = 40A , RG= 10Ω VGE= 15V, Tj = 125°C Figure 3 Min. Typ. 52 17 2400 50 19 2000 31 240 35 60 280 63 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A , RG= 10Ω VGE= 15V, Figure 1 VCC = 390V, IC = 40A RG= 10Ω VGE= 15V, , Tj = 125°C Figure 1 Min. Typ. 365 560 925 635 910 1545 Max. 470 790 1260 Unit µJ µJ µJ µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 4 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/11 Electrical characteristics STGY50NC60WD Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A If = 20A, Tj = 125°C If = 20A ,VR = 40V, Tj = 25°C, di/dt = 100 A/µs Figure 4 If = 12A ,VR = 40V, Tj =125°C, di/dt = 100A/µs Figure 4 Min. Typ. 1.5 1 44 66 3 88 237 5.4 Max. 2.2 Unit V V ns nC A ns nC A 6/11 STGY50NC60WD Test circuit 3 Figure 1. Test circuit Test circuit for inductive load switching Figure 2. Gate charge test circuit Figure 3. Switching waveform Figure 4. Diode recovery time waveform 7/11 Package mechanical data STGY50NC60WD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STGY50NC60WD Package mechanical data Max247 MECHANICAL DATA mm MIN. A A1 b b1 b2 c D e E L L1 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 TYP. MAX. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 MIN. inch TYP. MAX. DIM. P025Q 9/11 Revision history STGY50NC60WD 5 Revision history Table 8. Date 09-Oct-2006 Revision history Revision 1 Initial release. Changes 10/11 STGY50NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11
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