HCF4007UBEY

HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns (Typ.) AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT DESCRIPTION The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4007UB type is comprised of three n-channel and three p-channel enhancement type MOS transistors. The transistor elements are accessible through the package terminals to provide a convenient means for constructing the various typical circuits as shown in typical ) (s ) s ( ct DIP SOP PACKAGE TUBE t e l o DIP SOP u d o r P e ORDER CODES HCF4007UBEY HCF4007UBM1 T&R HCF4007UM013TR s b O applications. More complex functions are possible using multiple packages. Number shown in parentheses indicate terminals that are connected together to form the various configuration listed. t c u d o r P e t e l o s b O PIN CONNECTION March 2004 1/9 HCF4007UB INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° SYMBOL 2, 11 SP2, SP3 13, 1 DP1, DP2 8, 5 DN1, DN2 4, 9 SN2, SN3 12 DN/P3 NAME AND FUNCTION ) s ( ct u d o LOGIC DIAGRAM r P e 6, 3, 10 t e l o 7 14 ABSOLUTE MAXIMUM RATINGS Symbol VDD ) (s Parameter t c u Supply Voltage VI DC Input Voltage II DC Input Current d o r s b O G1 to G3 Source Connections to 2nd and 3rd p-channel transistors Drain Connections from the 1st and 2nd p-channel transistors Drain Connections from the 1st and 2nd n-channel transistors Source Connections to the 2nd and 3rd n-channel Common connection to the 3rd p-channel and n-channel transistor drains Gate connections to n-channel and p-channel of the three transistor pairs VSS Negative Supply Voltage VDD Positive Supply Voltage Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 V ± 10 mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD P e t e l o Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. s b O All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/9 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4007UB DC SPECIFICATIONS Test Condition Symbol IL Parameter Quiescent Current VOH Low Level Output Voltage VIH High Level Input Voltage VIL Low Level Input Voltage IOH Output Drive Current IOL Output Sink Current II Input Leakage Current Input Capacitance CI |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Output Voltage VOL VO (V) VI (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 r P e