HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
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32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT VDD = 10V, V DS = 1V
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF40107B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40107B is a dual 2-input NAND buffer/driver
containing two independent 2-input NAND buffers
with open-drain single n-channel transistor
outputs. This device features a wired-OR
capability and high output sink current capability
(136 mA typ. at VDD = 10V, VDS = 1V).
DIP
SOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
HCF40107BEY
HCF40107BM1
HCF40107M013TR
PIN CONNECTION
October 2002
1/11
HCF40107B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
2, 1, 7, 6
3, 5
4
A, B, D, E
C,F
VSS
Negative Supply Voltage
8
VDD
Positive Supply Voltage
Input
Outputs
FUNCTIONAL DIAGRAM
TRUTH TABLE
A
B
L
L
H*
Z#
H
L
H*
Z#
L
H
H*
Z#
H
H
L
* : Requires external and pull-up resistor (RL) to VDD.
# : Without pull-up resistor (3-state).
2/11
C
HCF40107B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Supply Voltage
Value
Unit
-0.5 to +22
V
V
VI
DC Input Voltage
-0.5 to VDD + 0.5
II
DC Input Current
± 10
mA
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
PD
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
Parameter
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
3/11
HCF40107B
DC SPECIFICATIONS
Test Condition
Symbol
IL
VIH**
VIL**
IOL
Parameter
Quiescent Current
VI
(V)
Low Level Input
Voltage
Output Drive
Current
IIH, IIL Input Leakage
Current
IOH, IOL 3-State Output
Leakage Current
***
CI
Input Capacitance
|IO| VDD
(µA) (V)
0/5
0/10
0/15
0/20
High Level Input
Voltage
Output Sink
Current
VO
(V)
5
5
10
10
15
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
0.4
1
0.5
1
0.5
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