HCF40107BEY

HCF40107BEY

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DIP-8

  • 描述:

    IC GATE NAND OD 2CH 2 INP

  • 数据手册
  • 价格&库存
HCF40107BEY 数据手册
HCF40107B DUAL 2-INPUT NAND BUFFER/DRIVER ■ ■ ■ ■ ■ ■ 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT VDD = 10V, V DS = 1V QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF40107B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs. This device features a wired-OR capability and high output sink current capability (136 mA typ. at VDD = 10V, VDS = 1V). DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF40107BEY HCF40107BM1 HCF40107M013TR PIN CONNECTION October 2002 1/11 HCF40107B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 2, 1, 7, 6 3, 5 4 A, B, D, E C,F VSS Negative Supply Voltage 8 VDD Positive Supply Voltage Input Outputs FUNCTIONAL DIAGRAM TRUTH TABLE A B L L H* Z# H L H* Z# L H H* Z# H H L * : Requires external and pull-up resistor (RL) to VDD. # : Without pull-up resistor (3-state). 2/11 C HCF40107B LOGIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage Value Unit -0.5 to +22 V V VI DC Input Voltage -0.5 to VDD + 0.5 II DC Input Current ± 10 mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C 3/11 HCF40107B DC SPECIFICATIONS Test Condition Symbol IL VIH** VIL** IOL Parameter Quiescent Current VI (V) Low Level Input Voltage Output Drive Current IIH, IIL Input Leakage Current IOH, IOL 3-State Output Leakage Current *** CI Input Capacitance |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 High Level Input Voltage Output Sink Current VO (V) 5 5 10 10 15 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 0.4 1 0.5 1 0.5
HCF40107BEY 价格&库存

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