HCF40109BEY

HCF40109B QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER ■ ■ ■ ■ ■ ■ ■ ■ ■ INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD UP AND DOWN LEVEL SHIFTING CAPABILITY THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V, AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" u d o r P e SOP ORDER CODES PACKAGE TUBE DIP SOP HCF40109BEY HCF40109BM1 ) s t( T&R c u d HCF40109M013TR o r P low-to-high level-shifting circuits, does not require the presence of the high voltage supply (VDD) before the application of either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes of the supply voltages or input signals within the device maximum ratings; VCC may exceed VDD, and input signals may exceed VCC and VDD. When operated in the mode VCC VDD, HCF40109B will operate as a high-to-low level-shifter. HCF40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output controls produces a high-impedance state in the corresponding output. e t le o s b O - DESCRIPTION HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40109B contains four low-to-high voltage level shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS to a higher voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS. HCF40109B, unlike other ) s ( ct DIP t e l o PIN CONNECTION s b O May 2003 1/10 HCF40109B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 3, 6, 10, 14 4, 5, 11, 13 1 A, B, C, D E, F, G, H ENABLE A, B, C, D NC VCC 8 VSS Negative Supply Voltage 16 VDD Positive Supply Voltage 2, 7, 9, 15 12 NAME AND FUNCTION Low Input Voltage High Input Voltage Enable Input Not Connected Low Supply Voltage TRUTH TABLE INPUTS MODE A, B, C, D Low to High Level Shift e t le ) s ( ct u d o r P e t e l o s b O 2/10 o s b O - Enable A, B, C, D L H X X : Don’t Care Z : High Impedance FUNCTIONAL DIAGRAM OUTPUT H H L o r P c u d ) s t( E, F, G, H L H Z HCF40109B LOGIC DIAGRAM c u d ABSOLUTE MAXIMUM RATINGS Symbol VDD Supply Voltage VI DC Input Voltage II DC Input Current Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Tstg Storage Temperature PD e t le Parameter (s) ct b O - so o r P ) s t( Value Unit -0.5 to +22 V -0.5 to +18 V ± 10 mA 200 100 mW mW -55 to +125 °C -65 to +150 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. u d o r P e RECOMMENDED OPERATING CONDITIONS Symbol t e l o VDD VI s b O Top Supply Voltage Parameter Value Unit 3 to 20 V Input Voltage -0.5 to 15V V Operating Temperature -55 to 125 °C 3/10 HCF40109B DC SPECIFICATIONS Test Condition Symbol IL Parameter Quiescent Current VOH 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Output Voltage VOL Low Level Output Voltage VIH High Level Input Voltage VIL Low Level Input Voltage IOH Output Drive Current IOL 0/5 0/5 0/10 0/15 0/5 0/10 0/15 Output Sink Current II Input Leakage Current Input Capacitance CI VO (V) VI (V) 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 |IO| VDD (µA) (V)