HCF4012B
DUAL 4 INPUT NAND GATE
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PROPAGATION DELAY TIME
tPD = 60ns (Typ.) at VDD = 10V
BUFFERED INPUTS AND OUTPUTS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4012B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4012B DUAL 4-INPUT NAND GATE
provides the system designer with direct
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DIP
SOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
HCF4012BEY
HCF4012BM1
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T&R
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HCF4012M013TR
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implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
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PIN CONNECTION
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September 2001
1/7
HCF4012B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
6, 8
2, 3, 4, 5
9, 10, 11, 12
1, 13
7
NC
A, B, C, D
E, F, G, H
J, K
VSS
Negative Supply Voltage
14
VDD
Positive Supply Voltage
Not Connected
Data Inputs
Data Inputs
Data Outputs
TRUTH TABLE
INPUTS
LOGIC DIAGRAM
Symbol
VDD
Parameter
Supply Voltage
VI
DC Input Voltage
II
DC Input Current
PD
A, B, C, D
E, F, G, H
J, K
L
L
H
H
L
H
L
H
H
H
H
L
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ABSOLUTE MAXIMUM RATINGS
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OUTPUTS
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Value
Unit
-0.5 to +22
V
-0.5 to VDD + 0.5
± 10
V
mA
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
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Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
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RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
2/7
Parameter
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
HCF4012B
DC SPECIFICATIONS
Test Condition
Symbol
IL
Parameter
Quiescent Current
Low Level Output
Voltage
VOL
High Level Input
Voltage
VIH
Low Level Input
Voltage
VIL
Output Drive
Current
IOH
0/5
0/5
0/10
0/15
0/5
0/10
0/15
Output Sink
Current
IOL
Input Leakage
Current
Input Capacitance
II
CI
|IO| VDD
(µA) (V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
High Level Output
Voltage
VOH
VO
(V)
VI
(V)
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
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