HCF4012M013TR

HCF4012B DUAL 4 INPUT NAND GATE ■ ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4012B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4012B DUAL 4-INPUT NAND GATE provides the system designer with direct ) s ( ct DIP SOP ORDER CODES PACKAGE TUBE DIP SOP HCF4012BEY HCF4012BM1 ) s t( T&R c u d HCF4012M013TR o r P implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. e t le o s b O - u d o r P e PIN CONNECTION t e l o s b O September 2001 1/7 HCF4012B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 6, 8 2, 3, 4, 5 9, 10, 11, 12 1, 13 7 NC A, B, C, D E, F, G, H J, K VSS Negative Supply Voltage 14 VDD Positive Supply Voltage Not Connected Data Inputs Data Inputs Data Outputs TRUTH TABLE INPUTS LOGIC DIAGRAM Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD A, B, C, D E, F, G, H J, K L L H H L H L H H H H L e t le ABSOLUTE MAXIMUM RATINGS ) s ( ct u d o OUTPUTS o s b O - c u d ) s t( o r P Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C r P e Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. t e l o s b O RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/7 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4012B DC SPECIFICATIONS Test Condition Symbol IL Parameter Quiescent Current Low Level Output Voltage VOL High Level Input Voltage VIH Low Level Input Voltage VIL Output Drive Current IOH 0/5 0/5 0/10 0/15 0/5 0/10 0/15 Output Sink Current IOL Input Leakage Current Input Capacitance II CI |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Output Voltage VOH VO (V) VI (V) 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5