HCF4025BEY

HCF4025B TRIPLE 3-INPUT NOR GATE ■ ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME : tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4025B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4025B TRIPLE 3-INPUT NOR GATE provides the system designer with direct DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4025BEY HCF4025BM1 HCF4025M013TR implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. PIN CONNECTION September 2001 1/7 HCF4025B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 2, 3, 4, 5, A, B, D, E, F, Data Inputs 8, 11, 12, 13 C, I, H, G 6, 9, 10 K, J, L Data Outputs V Negative Supply Voltage 7 SS VDD 14 Positive Supply Voltage TRUTH TABLE INPUTS LOGIC DIAGRAM OUTPUTS A, D, I B, E, H C, F, G K, J, L L L H H L H L H L H L H H L L L X = Don’t care ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/7 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4025B DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) Low Level Input Voltage Output Sink Current Input Leakage Current Input Capacitance |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Output Drive Current VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 Value 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5