HCF4030BEY

HCF4030B QUAD EXCLUSIVE-OR GATE ■ ■ ■ ■ ■ ■ ■ MEDIUM SPEED OPERATION - tPHL = tPLH = 65ns (TYP.) at CL = 50pF and VDD-VSS = 10V LOW OUTPUT IMPEDANCE : 500 Ω (TYP.) at VDD-VSS = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4030BEY HCF4030BM1 HCF4030M013TR DESCRIPTION HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF4030B types consist of four indipendent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects. PIN CONNECTION September 2002 1/10 HCF4030B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 2, 1, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs VSS Negative Supply Voltage 7 14 VDD Positive Supply Voltage TRUTH TABLE IN1 IN2 OUT L L H H L H L H L H H L FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 mA V 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. 2/10 HCF4030B RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Value Supply Voltage VI Input Voltage Top Operating Temperature Unit 3 to 20 V 0 to VDD V -55 to 125 °C DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter VI (V) 0/5 0/10 0/15 0/20 Output High 0/5 Voltage 0/10 0/15 Output Low Voltage 5/0 10/0 15/0 Input High Voltage VO (V) |IO| VDD (µA) (V) Quiescent Current Input Low Voltage Output Drive Current Output Sink Current Input Leakage Current Input Capacitance 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 Value