HCF4073M013TR

HCF4073B TRIPLE 3 INPUT AND GATE ■ ■ ■ ■ ■ ■ MEDIUM SPEED OPERATION : tPD = 60ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4073B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4073B TRIPLE 3 INPUT AND GATE provides the system designer with direct ) s ( ct DIP SOP ORDER CODES PACKAGE TUBE DIP SOP HCF4073BEY HCF4073BM1 ) s t( T&R c u d HCF4073M013TR o r P implementation of the AND function and supplement the existing family of CMOS gates. e t le o s b O - u d o r P e PIN CONNECTION t e l o s b O September 2001 1/7 HCF4073B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 13, 8, 5 12, 2, 4 11, 1, 3 10, 9, 6 7 G, C, F H, B, E I, A, D L, J, K VSS Negative Supply Voltage 14 VDD Positive Supply Voltage Data Inputs Data Inputs Data Inputs Data Outputs TRUTH TABLE INPUTS OUTPUTS G, C, F H, B, E I, A, D L, J , K L X X H X L X H X X L H L L L H c u d X : Don’t Care ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter VI DC Input Voltage II DC Input Current PD e t le Supply Voltage Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Tstg Storage Temperature (s) o s b O - o r P ) s t( Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 V ± 10 mA 200 100 mW mW -55 to +125 °C -65 to +150 °C t c u Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. d o r P e RECOMMENDED OPERATING CONDITIONS Symbol VDD Top s b O 2/7 Supply Voltage t e l o VI Input Voltage Operating Temperature Parameter Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4073B DC SPECIFICATIONS Test Condition Symbol IL Parameter Quiescent Current Low Level Output Voltage VOL High Level Input Voltage VIH Low Level Input Voltage VIL Output Drive Current IOH 0/5 0/5 0/10 0/15 0/5 0/10 0/15 Output Sink Current IOL Input Leakage Current Input Capacitance II CI |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Output Voltage VOH VO (V) VI (V) 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5