IRF540

IRF540 IRF540FI N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET TYPE IRF540 IRF540F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.077 Ω < 0.077 Ω ID 30 A 16 A TYPICAL RDS(on) = 0.050 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 TO-220 TO-220FI APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot Viso T stg Tj Parameter IRF530 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Insulation Withstand Voltage (DC) Storage T emperature Max. O perating Junction Temperature o o Value IRF 530FI 100 100 ± 20 30 21 120 150 1 -65 to 175 175 (1) ISD ≤ 30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V 17 12 120 45 0.3 2000 A A A W W/ o C V o o C C (•) Pulse width limited by safe operating area April 1998 1/6 IRF540/IRF540FI THERMAL DATA TO-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 T O220-F I 3.33 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25 V) Max Valu e 30 200 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µ A V GS = 0 Min. 100 1 10 ± 100 Typ . Max. Un it V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 2 0 V T c = 125 oC ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 µ A ID = 15 A 30 Min. 2 Typ . 3 0.05 Max. 4 0.077 Un it V Ω A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 15 A VGS = 0 Min. 10 Typ . 20 2600 350 85 3600 500 120 Max. Un it S pF pF pF 2/6 IRF540/IRF540FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 50 V R G = 4.7 Ω V DD =80 V I D = 15 A VGS = 10 V I D =30 A V GS = 10 V Min. Typ . 20 60 80 13 28 Max. 28 85 110 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 80 V I D =30 A R G = 4.7 Ω V GS = 10 V Min. Typ . 22 25 55 Max. 30 35 75 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A I SD =30 A V DD = 30 V V GS = 0 di/dt = 100 A/µ s o Tj = 150 C 175 1.1 12.5 Test Cond ition s Min. Typ . Max. 30 120 1.5 Un it A A V ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area 3/6 IRF540/IRF540FI TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G 4/6 H2 P011C IRF540/IRF540FI ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 P011G G 5/6 IRF540/IRF540FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6