IRF630MFP

IRF630M IRF630MFP N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET General features Type IRF630M IRF630MFP ■ ■ ■ VDSS (@Tjmax) 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 9A 9A 1 2 3 3 1 2 Extremely high dv/dt capability Very low intrinsic capacitances Gate charge minimized TO-220 TO-220FP Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. Internal schematic diagram Applications ■ Switching application Order codes Part number IRF630M IRF630MFP Marking IRF630M IRF630MFP Package TO-220 TO-220FP Packaging Tube Tube June 2006 Rev 2 1/14 www.st.com 14 Contents IRF630M - IRF630MFP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 IRF630M - IRF630MFP Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum rating Parameter IRF630M Value IRF630MFP 200 200 ± 20 9 5.7 36 75 0.6 5 -–65 to 150 150 9 (1) (1) Unit VDS VDGR VGS ID ID IDM (2) Drain-source Voltage (VGS = 0) Drain-gate voltage (RGS = 20 kW) Gate- source voltage Drain current (continuos) at TC = 25°C Drain current (continuos) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor V V V A A A W W/°C V/ns V °C °C 5.7 36 30 0.24 5 2500 PTOT (3) dv/dt Peak diode recovery voltage slope Insulation winthstand voltage (DC) Storage temperature Max. operating junction temperature VISO Tstg Tj 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX. 9A, Table 2. Thermal data TO-220 TO-220FP 4.17 62.5 300 °C/W °C/W °C 1.67 Rthj-case Thermal resistance junction-case max Rthj-amb Tl Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 5 350 Unit A mJ 3/14 Electrical characteristics IRF630M - IRF630MFP 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = max rating VDS = max rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 4.5A 2 3 0.35 Min. 200 1 50 ±100 4 0.40 Typ. Max. Unit V µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) Table 5. Symbol gfs (1) Ciss Coss Crss td(on tr tr(Voff) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test conditions VDS > ID(on) x RDS(on)max, ID = 4.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3 Typ. 4 540 90 35 10 15 12 12 31 7.5 9 700 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 100V, ID = 4.5A RG = 4.7Ω VGS = 10V 14 20 17 17 45 VDD = 160V, ID = 9A, VGS = 10V 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 IRF630M - IRF630MFP Electrical characteristics Table 6. Symbol ISD ISDM (1) Sourse drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 9A, VGS = 0 170 0.95 11 Test conditions Min. Typ. Max. 9 36 1.5 Unit A A V ns nC A VSD (2) trr Qrr IRRM Reverse recovery time I = 9A, di/dt = 100A/µs Reverse recovery charge SD VDD = 50V, Tj = 150°C Reverse recovery current 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics IRF630M - IRF630MFP 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 IRF630M - IRF630MFP Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics IRF630M - IRF630MFP 8/14 IRF630M - IRF630MFP Test circuit 3 Test circuit Figure 15. Unclamped inductive waveform Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times 9/14 Package mechanical data IRF630M - IRF630MFP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 IRF630M - IRF630MFP Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 11/14 Package mechanical data IRF630M - IRF630MFP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 E L2 L5 123 L4 12/14 G IRF630M - IRF630MFP Revision history 5 Revision history Table 7. Date 21-Jun-2004 28-Jun-2006 Revision history Revision 1 2 Preliminary version New template, no content change Changes 13/14 IRF630M - IRF630MFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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