L149V

L149 4A LINEAR DRIVER ■ ■ ■ ■ ■ ■ ■ HIGH OUTPUT CURRENT (4A peak) HIGH CURRENT GAIN (10.000 typ.) OPERATION UP TO ± 20 V THERMAL PROTECTION SHORT CIRCUIT PROTECTION OPERATION WITHIN SOA HIGH SLEW-RATE (30 V/ms) DESCRIPTION Pentawatt V The L149 is a general purpose power booster in Pentawatt ® package consisting of a quasi-complentary darlington output stage with the associated biasing system an inhibit facility. c u d The device is particularly suited for use with an operational amplifier inside a closed loop configuration to increase output current. ORDERING NUMBER: L149V TEST CIRCUIT ) s ( ct e t le ) s t( o r P o s b O - u d o r P e t e l o s b O July 2003 1/6 L149 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VS Supply Voltage Vi Input Voltage Value Unit ±20 V V s V5 - V4 Upper Power Transistor VCE 40 V V4 - V3 Lower Power Transistor VCE 40 V 3 A IO DC Output Current IO Peak Output Current (internally limited) VINH Input Inhibit Voltage Ptot Total Power Dissipation at Tcase = 75 °C) 4 A - Vs + 5 V - Vs - 1.5 V 25 W PIN CONNECTION (Top view) c u d e t le SCHEMATIC DIAGRAM ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O THERMAL DATA Symbol Rth-j-case 2/6 Parameter Thermal resistance junction-case max Value Unit 3 °C/W L149 ELECTRICAL CHARACTERISTCS (Tj = 25 °C, VS = ± 16V) Symbol Parameter Test Condition Min. Typ. Max. Unit ± 20 V VS Supply Voltage Id Quiescent Drain Current V S = ± 16V 30 Iin Input current V S = ± 16V; Vi = 0V 200 hFE DC current drain VS = ± 16V; IO = 3A GV Voltage gain V S = ± 16V; IO = 1.5A Saturation voltage (for each transistor) IO = 3A 3.5 V VOS Input offset voltage V S = ± 16V 0.3 V VINH Inhibit input voltage (pins 1-3) ON condition ± 0.3 V VCEsat 6000 10000 - 1 - uc 2.0 d o r Slew rate B 30 Power bandwidth V O = ± 10V, d = 1%, R L = 8Ω P e let APPLICATION INFORMATION µA ) s t( V Inhibit input resistance SR 400 ± 1.8 OFF condition RINH mA 200 KΩ V/µs KHZ o s b O - Figure 1. High slew-rate power operational amplifier (SR = 13V/µs) ) s ( ct u d o r P e t e l o s b O 3/6 L149 Figure 2. Maximum saturation voltage vs. output current. Figure 5. Distorsion vs. output power (f = 1KHz). Figure 3. Current limiting characteristics. Figure 6. Distorsion vs. output power (f = 1KHz). c u d e t le ) s ( ct u d o Figure 4. Supply voltage rejection vs. frequency. r P e t e l o s b O 4/6 ) s t( o r P o s b O - Figure 7. Output power vs. supply voltage. L149 DIM. A C D D1 E E1 F F1 G G1 H2 H3 L L1 L2 L3 L4 L5 L6 L7 L9 L10 M M1 V4 V5 Dia MIN. mm TYP. 2.4 1.2 0.35 0.76 0.8 1.0 3.2 6.6 3.4 6.8 10.05 17.55 15.55 21.2 22.3 17.85 15.75 21.4 22.5 2.6 15.1 6.0 2.1 4.3 4.23 3.75 4.5 4.0 3.65 inch TYP. MAX. MIN. 4.8 1.37 2.8 0.094 1.35 0.047 0.55 0.014 1.19 0.030 1.05 0.031 1.4 0.039 3.6 0.126 7.0 0.260 10.4 10.4 0.396 18.15 0.691 15.95 0.612 21.6 0.831 22.7 0.878 1.29 3.0 0.102 15.8 0.594 6.6 0.236 2.7 0.008 4.8 0.17 4.75 0.167 4.25 0.148 40˚ (typ.) 90˚ (typ.) 3.85 0.144 0.134 0.268 0.703 0.620 0.843 0.886 0.178 0.157 MAX. 0.189 0.054 0.110 0.053 0.022 0.047 0.041 0.055 0.142 0.276 0.409 0.409 0.715 0.628 0.850 0.894 0.051 0.118 0.622 0.260 0.106 0.189 0.187 0.167 L1 ) s ( ct C u d o s b O t e l o r P e D1 L5 Weight: 2.00gr c u d ) s t( o r Pentawatt P V e let 0.152 L A OUTLINE AND MECHANICAL DATA o s b O - E M1 M D V5 L2 H2 L3 F E E1 V4 H3 G G1 Dia. F F1 L9 L4 L10 L7 L6 H2 V4 RESIN BETWEEN LEADS PENTVME 0015981 5/6 L149 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. s b O STMicroelectronics acknowledges the trademarks of all companies referred to in this document. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6