L165

L165 3A POWER OPERATIONAL AMPLIFIER OUTPUT CURRENT UP TO 3A LARGE COMMON-MODE AND DIFFERENTIAL MODE RANGES SOA PROTECTION THERMAL PROTECTION ± 18V SUPPLY DESCRIPTION The L165 is a monolithic integrated circuit in Pentawatt® package, intended for use as power operational amplifier in a wide range of applications, including servo amplifiers and power supplies. The high gain and high output power capability provide superiore performance wherever an operational amplifier/power booster combination is required. ABSOLUTE MAXIMUM RATINGS Symbol Vs Supply voltage V5 V4 Upper power transistor VCE V4 V3 Lower power transistor VCE Vi Input voltage Vj Differential input voltage Io Ptot Tstg, Tj Power dissipation at Tcase = 90°C Storage and junction temperature Parameter Value ± 18 36 36 Vs ± 15 3.5 20 -40 to 150 Unit V V V V A W °C Pentawatt® ORDERING NUMBER : L165V Peak output current (internally limited) APPLICATION CIRCUITS Figure 1. Gain > 10. Figure 2. Unity gain configuration. October 1991 1/9 L165 PIN CONNECTION (top view) SCHEMATIC DIAGRAM THERMAL DATA Symbol Rth-j-case Parameter Thermal resistance junction-case max Value 3 Unit °C/W 2/9 L165 ELECTRICAL CHARACTERISTICS (VS = ± 15 V, Tj = 25 °C unless otherwise specified) Symbol Vs Id Ib Vos Ios SR Parameter Supply Voltage Quiescent Drain Current Input Bias Current Input Offset Voltage Input Offset Current Slew-rate Gv = 10 Gv = 1 (°) Vo Output Voltage Swing f = 1 kHz f = 10 kHz R Gv eN iN CMR SVR Input Resistance (pin 1) Voltage Gain (open loop) Input Noise Voltage Input Noise Current Common-mode Rejection Supply Voltage Rejection Rg ≤ 10 KΩ Rg = 22 KΩ Vripple = 0.5 Vrms fripple = 100 Hz f = 1 kHz RL = 4 Ω Ptot = 12 W Ptot = 6 W Gv = 30 dB Gv = 10 dB Gv = 100 Ip = 1.6 A; Po = 5W Ip = 3 A; Po = 18 W B = 10 to 10 000 Hz Ip = 0.3 A Ip = 3 A Ip = 0.3 A Ip = 3 A 100 Vs = ± 18 V Test Conditions Min. ±6 40 0.2 ±2 ± 20 8 6 27 24 27 23 500 80 2 100 70 60 40 70 60 110 130 dB Vpp VPP KΩ dB µV pA dB dB dB % % °C Typ. Max. ± 18 60 1 ± 10 ± 200 Unit V mA µA mV nA V/µs f = 1 KHz Efficiency Tsd Thermal Shut-down Case Temperature 3/9 L165 Figure 3. Open loop frequency response. Figure 4. Closed loop frequency response (circuit of figure 2). F ig ure 5. L arge si gnal fre quency response. Figure 6. Maximum output current vs. vo ltage [VCE] across each output transistor. Figure 7. Safe operating area and collector characteristics of the protected power transistor. Figure 8. Maximum allowable power dissipation vs. ambient temperature. 4/9 L165 Figure 9. Bidirectional DC motor control with TTL/CMOS/µP compatible inputs. Must be VS2 ≥ VS1 E1, E2 = logic inputs VS1 = logic supply voltage Figure 10. Motor current control circuit with external power transistors (Imotor > 3.5A). D1 to D4 : VF ≤ 1.2 @ I = 4A trr ≤ 500 ns IM Note : The inputvoltage level is compatible with L291 (5-BIT D/A converter). The transfer function is : Vi = R4 Rx R3 5/9 L165 Figure 11. High current tracking regulator. Figure 12. Bidirectional speed control of DC motor (Compensation networks not shown). A : for ± 18 ≤ Vi ± 32 Note : Vz must be chosen in order to verify 2 Vi-Vz ≤ 36V B : for Vi ≤ ± 18V D1, D2 : VF ≤ 1.2V @ I = 2A trr ≤ 500 ns Figure 13. Split power supply. 6/9 L165 Figure 14. Power squarewave oscillator with independent adjustments for frequency and duty-cycle. P1 : duty-cycle adjust P2 : frequency adjust (f = 700 Hz with C1 = 10 nF, P2 = 100 KΩ, f = 25 Hz with C1 = 10 nF, P2 = 0) 7/9 L165 PENTAWATT PACKAGE MECHANICAL DATA DIM. MIN. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia 3.65 2.6 15.1 6 4.5 4 3.85 0.144 10.05 17.85 15.75 21.4 22.5 3 15.8 6.6 0.102 0.594 0.236 0.177 0.157 0.152 2.4 1.2 0.35 0.8 1 3.4 6.8 10.4 10.4 0.396 0.703 0.620 0.843 0.886 0.118 0.622 0.260 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 L L1 E A C D1 L2 L3 L5 D Dia. F1 F L6 8/9 H2 L7 G G1 H3 M M1 L165 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9