L5NK65Z

N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET TYPE STLNK65Z s s s s s s s STL5NK65Z PRELIMINARY DATA VDSS 650 V RDS(on) < 1.8 Ω ID (1) 4.2 A Pw (1) 75 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY PowerFLAT™(5x5) (Chip Scale Package) DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STL5NK65Z MARKING L5NK65Z PACKAGE PowerFLAT™ (5x5) PACKAGING TAPE & REEL April 2002 1/6 STL5NK65Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (2) IDM (2) PTOT (2) PTOT (1) dv/dt (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C (Steady State) Derating Factor (2) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 650 650 ± 30 0.76 0.48 3 2.5 75 0.02 4.5 –55 to 150 Unit V V V A A A W W W/°C V/ns °C THERMAL DATA Symbol Rthj-F Note: 1. 2. 3. 4. Parameter Thermal Resistance Junction-Foot (Drain) Max. 1.67 50 Unit °C/W °C/W Rthj-amb (2) Thermal Resistance Junction-ambient The value is rated according to Rthj-F. When Mounted on FR-4 Board of 1inch2, 2 oz Cu Pulse width limited by safe operating area ISD