L6122

L 6122 L6123 100 V DMOS SWITCHES . . . . . . ADVANCE DAT A OUTPUT VOLTAGE TO 100V 0,5Ω RDS (on) SUPPLY VOLTAGE UP TO 60V LOW INPUT CURRENT TTL/CMOS COMPATIBLE INPUTS HIGH SWITCHING FREQUENCY (200kHz) MULTIPOWER BCD TECHNOLOGY DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6122/23 monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6122 mounted in a Powerdip 14 + 3 + 3 package and the L6123 in a 15-lead Multiwatt package. PIN CONNECTIONS (top view) Pow erd ip 14+3+3 (Plastic Package) ORDERING NUMBER : L6122 MULTIWATT15V (Plastic Package) ORDERING NUMBER : L6123 L6122 (PO WERDIP) L6123 (MULTIWATT15V) April 1993 This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 L6122 - L6123 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VCC ID IDM (*) ISD ISDM VIN VEN VS Ptot Drain-source Voltage Supply Voltage Continuous Drain Current @ Tpins = 90 °C, POWERDIP @ Tcase = 90 °C, MULTIWATT Pulsed Drain Current Continuous Source-drain Diode Current POWERDIP MULTIWATT @ Tpins = 90 °C, POWERDIP @ Tcase = 90 °C, MULTIWATT POWERDIP MULTIWATT Parameter Value 100 60 1.5 3 5 8 1.5 3 5 8 7 7 – 1 to + 4 @ @ @ @ Tpins = 90 °C, POWERDIP Tcase = 90 °C, MULTIWATT Tamb = 70 °C, POWERDIP Tamb = 70 °C, MULTIWATT 4.3 20 1.3 2.3 – 40 to + 150 Unit V V A A A A A A A A V V V W W W W °C Pulsed Source Drain Diode Current Input Voltage Enable Voltage Source Voltage Total Power Dissipation Tstg, Tj Storage and Junction Temperature Range (*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %. NOTE : ID, IDM, ISD, ISDM are given per channel. THERMAL DATA Symbol R th j-pins R th j-case Rth j-amb Parameter Thermal Resistance Junction-pins Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Max. POWERDIP14+3+3 14 65 MULTIW ATT15 3 35 Unit o o o C/W C/W C/W 2/9 L6122 - L6123 ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified) Symbol VCC ICC IQ BVDSS IDSS Parameter Supply Voltage Supply Current Quiescent Current Drain Source Breakdown Voltage Output Leakage Current All VIN = H VEN = Square Wave (200kHz, 50% DC) VEN = L ID = 1mA VEN = L VEN = L VDS = 100V VDS = 80V, Tj = 125°C VCC ≥ 14V, ID = 1.5A - VEN, VIN = H - 0.3 2 VIN, VEN = L VIN, VEN = H 300 ID = 1.5A See Test Circuit and Waveforms 100 400 100 ISD = 1.5A, VEN = L ISD = 1.5A - VIN , VEN = H 1.5 1.2 100 Test Conditions Min. 14 9 2 3 Typ. Max. 48 Unit V mA mA V mA 1 1 0.7 0.8 7 - 100 10 Ω V V µA µA ns ns ns ns V V R DS(on) (*) VINL, VENL VINH, VENH IINL, IENL IINH, IENH td (on) tr td (off ) tf VSD (*) VSD(on) (*) Static Drain-source on Resistance Input Low Voltage Input High Voltage Input Low Current Input High Current Turn on Delay Time Rise Time Turn off Delay Time Fall Time Source Drain Diode Forward Voltage Source Drain Forward Voltage (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit. 3/9 L6122 - L6123 Figure 2 : Waveforms. a) b) Figure 3 : Static Drain-source on Resistance. Figure 4 : Normalized Breakdown Voltage vs. Temperature. Figure 5 : Normalized on Resistance vs. Temperature. Figure 6 : Typical Source-drain Diode Forward Voltage. 4/9 L6122 - L6123 Figure 7 : Rth j-amb vs. Dissipated Power (Multiwatt). (*) Rth ≈ 9°C/W Figure 8 : Transient Thermal Resistance for Single Pulses (Multiwatt). 5/9 L6122 - L6123 Figure 9 : Peak Transient Thermal Resistance vs. Pulse Width and Duty Cycle (Multiwatt). 6/9 L6122 - L6123 MULTIWATT15 PACKAGE MECHANICAL DATA DIM. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 22.1 22 17.65 17.25 10.3 2.65 4.2 4.5 1.9 1.9 3.65 4.3 5.08 17.5 10.7 0.49 0.66 1.14 17.57 19.6 20.2 22.6 22.5 18.1 17.75 10.9 2.9 4.6 5.3 2.6 2.6 3.85 0.870 0.866 0.695 0.679 0.406 0.104 0.165 0.177 0.075 0.075 0.144 0.169 0.200 0.689 0.421 1.27 17.78 1 0.55 0.75 1.4 17.91 0.019 0.026 0.045 0.692 0.772 0.795 0.890 0.886 0.713 0.699 0.429 0.114 0.181 0.209 0.102 0.102 0.152 0.050 0.700 mm MIN. TYP. MAX. 5 2.65 1.6 0.039 0.022 0.030 0.055 0.705 MIN. inch TYP. MAX. 0.197 0.104 0.063 7/9 L6122 - L6123 POWERDIP20 PACKAGE MECHANICAL DATA DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 22.86 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 24.80 0.346 0.100 0.900 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.976 0.055 inch TYP. MAX. 8/9 L6122 - L6123 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT ® is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9