L6206Q
DMOS dual full bridge driver
Datasheet - production data
Undervoltage lockout
Integrated fast free wheeling diodes
VFQFPN48
Application
(7 x 7 mm)
Bipolar stepper motor
Dual or quad DC motor
Features
Description
Operating supply voltage from 8 to 52 V
5.6 A output peak current RDS(on) 0.3 typ.
value at Tj = 25 °C
Operating frequency up to 100 kHz
Programmable high side overcurrent detection
and protection
Diagnostic output
Paralleled operation
Cross conduction protection
Thermal shutdown
The L6206Q device is a DMOS dual full bridge
driver designed for motor control applications,
developed using BCDmultipower technology,
which combines isolated DMOS power transistors
with CMOS and bipolar circuits on the same chip.
Available in a VFQFPN48 7 x 7 package, the
L6206Q device features thermal shutdown and
a non-dissipative overcurrent detection on the
high side Power MOSFETs plus a diagnostic
output that can be easily used to implement the
overcurrent protection.
Figure 1. Block diagram
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This is information on a product in full production.
DocID022028 Rev 4
1/27
www.st.com
Contents
L6206Q
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.3
Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . . .11
4.4
Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Paralleled operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7
Output current capability and IC power dissipation . . . . . . . . . . . . . . 21
8
Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
10
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
10.1
VFQFPN48 (7 x 7 x 1.0 mm) package information . . . . . . . . . . . . . . . . . 24
11
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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DocID022028 Rev 4
L6206Q
Electrical data
1
Electrical data
1.1
Absolute maximum ratings
Table 1. Absolute maximum ratings
Symbol
VS
VOD
VOCDA,
VOCDB
Parameter
Value
Unit
Supply voltage
VSA = VSB = VS
60
V
Differential voltage between VSA,
OUT1A, OUT2A, SENSEA and VSB,
OUT1B, OUT2B, SENSEB
VSA = VSB = VS = 60 V;
VSENSEA = VSENSEB =
GND
60
V
OCD pins voltage range
-
-0.3 to +10
V
-
-0.3 to +7
V
VPROGCLA,
PROGCL pins voltage range
VPROGCLB
VBOOT
Bootstrap peak voltage
VSA = VSB = VS
VS + 10
V
VIN,VEN
Input and enable voltage range
-
-0.3 to +7
V
VSENSEA,
VSENSEB
Voltage range at pins SENSEA and
SENSEB
-
-1 to +4
V
IS(peak)
Pulsed supply current (for each VS
pin), internally limited by the
overcurrent protection
VSA = VSB = VS;
tPULSE < 1 ms
7.1
A
RMS supply current (for each VS pin)
VSA = VSB = VS
2.5
A
Storage and operating temperature
range
-
-40 to 150
°C
IS
Tstg, TOP
1.2
Test condition
Recommended operating conditions
Table 2. Recommended operating conditions
Symbol
VS
VOD
Parameter
Test condition
Supply voltage
VSA = VSB = VS
Differential voltage between VSA,
OUT1A, OUT2A, SENSEA and VSB,
OUT1B, OUT2B, SENSEB
VSA = VSB = VS;
VSENSEA = VSENSEB
VSENSEA, Voltage range at pins SENSEA and
VSENSEB SENSEB
52
V
52
V
-6
6
V
DC
-1
1
V
2.5
A
+125
°C
100
kHz
-
Tj
Operating junction temperature
-
fsw
Switching frequency
-
DocID022028 Rev 4
8
Max. Unit
Pulsed tW < trr
RMS output current
IOUT
Min.
-25
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27
Pin connection
2
L6206Q
Pin connection
NC
1
OUT1A
2
VCP
OUT2A
OUT2A
NC
44
ENA
45
IN1A
46
PROGCLA
IN2A
47
SENSEA
NC
48
SENSEA
OCDA
Figure 2. Pin connection (top view)
43
42
41
40
39
38
37
EPAD
36
NC
35
VSA
30
NC
NC
8
29
NC
NC
9
28
NC
OUT1B
10
27
VSB
OUT1B
11
26
VSB
NC
12
25
NC
13
14
15
16
17
18
19
20
21
22
23
24
NC
7
OUT2B
GND
NC
OUT2B
31
ENB
6
VBOOT
NC
GND
IN2B
32
PROGCLB
5
IN1B
NC
NC
SENSEB
VSA
33
SENSEB
34
4
NC
3
NC
OCDB
OUT1A
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1. The exposed PAD must be connected to GND pin.
Table 3. Pin description
Pin
Name
Type
43
IN1A
Logic input
Bridge A logic input 1.
44
IN2A
Logic input
Bridge A logic input 2.
45, 46
SENSEA
Power supply
48
OCDA
2, 3
OUT1A
Power output
6, 31
GND
GND
10, 11
OUT1B
Power output
13
OCDB
15, 16
SENSEB
Power supply
17
IN1B
Logic input
4/27
Function
Bridge A source pin. This pin must be connected to power ground
directly or through a sensing power resistor.
Bridge A overcurrent detection and thermal protection pin. An internal
Open-drain output open-drain transistor pulls to GND when overcurrent on bridge A is
detected or in case of thermal protection.
Bridge A output 1.
Signal ground terminals. These pins are also used for heat dissipation
toward the PCB.
Bridge B output 1.
Bridge B overcurrent detection and thermal protection pin. An internal
Open-drain output open-drain transistor pulls to GND when overcurrent on bridge B is
detected or in case of thermal protection.
Bridge B source pin. This pin must be connected to power ground
directly or through a sensing power resistor.
Bridge B input 1
DocID022028 Rev 4
L6206Q
Pin connection
Table 3. Pin description (continued)
Pin
Name
Type
18
IN2B
Logic input
Function
Bridge B input 2
19
PROGCLB
R pin
Bridge B overcurrent level programming. A resistor connected between
this pin and ground sets the programmable current limiting value for
bridge B. By connecting this pin to ground the maximum current is set.
This pin cannot be left unconnected.
20
ENB
Logic input
Bridge B enable. LOW logic level switches OFF all Power MOSFETs of
bridge B. If not used, it must be connected to +5 V.
21
VBOOT
Supply voltage
Bootstrap voltage needed for driving the upper Power MOSFETs of both
bridge A and bridge B.
22, 23
OUT2B
Power output
Bridge B output 2.
26, 27
VSB
Power supply
Bridge B power supply voltage. It must be connected to the supply
voltage together with pin VSA.
34, 35
VSA
Power supply
Bridge A power supply voltage. It must be connected to the supply
voltage together with pin VSB.
38, 39
OUT2A
Power output
Bridge A output 2.
40
VCP
Output
41
ENA
Logic input
Bridge A enable. LOW logic level switches OFF all Power MOSFETs of
bridge A. If not used, it must be connected to +5 V.
R pin
Bridge A overcurrent level programming. A resistor connected between
this pin and ground sets the programmable current limiting value for
bridge A. By connecting this pin to ground, the maximum current is set.
This pin cannot be left unconnected.
42
PROGCLA
Charge pump oscillator output.
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Electrical characteristics
3
L6206Q
Electrical characteristics
VS = 48 V, TA = 25 °C, unless otherwise specified.
Table 4. Electrical characteristics
Symbol
VSth(ON)
Parameter
Test condition
Min.
Typ.
Max.
Unit
Turn-on threshold
-
6.6
7
7.4
V
VSth(OFF) Turn-off threshold
-
5.6
6
6.4
V
IS
Tj(OFF)
Quiescent supply current
All bridges OFF; Tj = -25 °C to
125 °C(1)
-
5
10
mA
Thermal shutdown temperature
-
-
165
-
°C
Tj = 25 °C
-
0.34
0.4
Tj = 125 °C(1)
-
0.53
0.59
Tj = 25 °C
-
0.28
0.34
Tj = 125 °C(1)
-
0.47
0.53
EN = low; OUT = VS
-
-
2
mA
-0.15
-
-
mA
Output DMOS transistors
High-side switch ON resistance
RDS(ON)
Low-side switch ON resistance
IDSS
Leakage current
EN = low; OUT = GND
Source drain diodes
VSD
Forward ON voltage
ISD = 2.5 A, EN = LOW
-
1.15
1.3
V
trr
Reverse recovery time
If = 2.5 A
-
300
-
ns
tfr
Forward recovery time
-
-
200
-
ns
Logic input
VIL
Low level logic input voltage
-
-0.3
-
0.8
V
VIH
High level logic input voltage
-
2
-
7
V
IIL
Low level logic input current
GND logic input voltage
-10
-
-
µA
IIH
High level logic input current
7 V logic input voltage
-
-
10
µA
Vth(ON)
Turn-on input threshold
-
-
1.8
2
V
Vth(OFF)
Turn-off input threshold
-
0.8
1.3
-
V
Vth(HYS)
Input threshold hysteresis
-
0.25
0.5
-
V
100
250
400
ns
Switching characteristics
tD(on)EN
Enable pin to out, turn ON delay time(2) ILOAD = 2.5 A, resistive load
tD(on)IN
Input pin to out, turn ON delay time
ILOAD = 2.5 A, resistive load
(deadtime included)
-
1.6
-
µs
Output rise time(2)
ILOAD = 2.5 A, resistive load
40
-
250
ns
Enable pin to out, turn OFF delay
time(2)
ILOAD = 2.5 A, resistive load
300
550
800
ns
tRISE
tD(off)EN
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DocID022028 Rev 4
L6206Q
Electrical characteristics
Table 4. Electrical characteristics (continued)
Symbol
tD(off)IN
Parameter
Test condition
Min.
Typ.
Max.
Unit
Input pin to out, turn OFF delay time
ILOAD = 2.5 A, resistive load
-
600
-
ns
Output fall time(2)
ILOAD = 2.5 A, resistive load
40
-
250
ns
tDT
Deadtime protection
-
0.5
1
-
µs
fCP
Charge pump frequency
-25 °C < Tj < 125 °C
-
0.6
1
MHz
tFALL
Overcurrent detection
Is over
Input supply overcurrent detection
threshold
-25 °C < Tj < 125 °C; RCL = 39 k
-25 °C < Tj < 125 °C; RCL = 5 k
-25 °C < Tj < 125 °C; RCL = GND
-
0.57
4.42
5.6
-
A
A
A
ROPDR
Open-drain ON resistance
I = 4 mA
-
40
60
tOCD(ON) OCD turn-on delay time(3)
I = 4 mA; CEN < 100 pF
-
200
-
ns
time(3)
I = 4 mA; CEN < 100 pF
-
100
-
ns
tOCD(OFF) OCD turn-off delay
1. Tested at 25 °C in a restricted range and guaranteed by characterization.
2. See Figure 3.
3. See Figure 4.
Figure 3. Switching characteristic definition
EN
Vth(ON)
Vth(OFF)
t
IOUT
90%
10%
t
D01IN1316
tFALL
tD(OFF)EN
tRISE
tD(ON)EN
AM02557v1
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Electrical characteristics
L6206Q
Figure 4. Overcurrent detection timing definition
IOUT
OCD
Threshold
t
VOCD
90%
10%
t
tOCD(ON)
tOCD(OFF)
AM02558v1
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L6206Q
Circuit description
4
Circuit description
4.1
Power stages and charge pump
The L6206Q device integrates two independent Power MOS full bridges. Each power MOS
has an RDS(ON) = 0.3 (typical value at 25 °C) with intrinsic fast freewheeling diode. Cross
conduction protection is implemented by using a deadtime (tDT = 1 µs typical value) set by
an internal timing circuit between the turn-off and turn-on of two Power MOSFETs in one leg
of a bridge.
Pins VSA and VSB must be connected together to the supply voltage (VS).
Using an N-channel Power MOSFET for the upper transistors in the bridge requires a gate
drive voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and few external components to realize a charge pump circuit,
as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz (typically)
with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are
shown in Table 5.
Table 5. Charge pump external component values
Component
Value
CBOOT
220 nF
CP
10 nF
RP
100
D1
1N4148
D2
1N4148
Figure 5. Charge pump circuit
VS
D1
CBOOT
D2
RP
CP
VCP
VBOOT
VSA VSB
AM02559v1
4.2
Logic inputs
Pins IN1A, IN2A, IN1B, IN2B, ENA, and ENB are TTL/CMOS and µC compatible logic inputs.
The internal structure is shown in Figure 6. The typical values for turn-on and turn-off
thresholds are respectively Vth(ON) = 1.8 V and Vth(OFF) = 1.3 V.
Pins ENA and ENB are commonly used to implement overcurrent and thermal protection by
connecting them respectively to the outputs OCDA and OCDB, which are open-drain
outputs. If this type of connection is chosen, particular care needs to be taken in driving
these pins. Two configurations are shown in Figure 7 and Figure 8. If driven by an opendrain (collector) structure, a pull-up resistor REN and a capacitor CEN are connected as
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27
Circuit description
L6206Q
shown in Figure 7. If the driver is a standard push-pull structure the resistor REN and the
capacitor CEN are connected as shown in Figure 8. The resistor REN should be chosen in
the range from 2.2 k to 180 k. Recommended values for REN and CEN are respectively
100 k and 5.6 nF. More information on selecting the values can be found in Section 4.3:
Non-dissipative overcurrent detection and protection.
Figure 6. Logic inputs internal structure
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Figure 7. ENA and ENB pins open collector driving
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Figure 8. ENA and ENB pins push-pull driving
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DocID022028 Rev 4
L6206Q
Circuit description
Table 6. Truth table
Inputs
Outputs
EN
IN1
IN2
OUT1
OUT2
L
X(1)
X(1)
High Z(2)
High Z(2)
H
L
L
GND
GND
H
H
L
VS
GND
H
L
H
GND
VS
H
H
H
VS
VS
1. X = Do not care.
2. High Z = high impedance output.
4.3
Non-dissipative overcurrent detection and protection
The L6206Q device integrates an overcurrent detection circuit (OCD). With this internal
overcurrent detection, the external current sense resistor normally used and its associated
power dissipation are eliminated. Figure 9 shows a simplified schematic of the overcurrent
detection circuit for bridge A. Bridge B is provided with an analogous circuit.
To implement the overcurrent detection, a sensing element that delivers a small but precise
fraction of the output current is implemented with each high side Power MOSFET. Since this
current is a small fraction of the output current there is very little additional power
dissipation. This current is compared with an internal reference current IREF. When the
output current reaches the detection threshold Isover, the OCD comparator signals a fault
condition. When a fault condition is detected, an internal open-drain MOSFET with a pulldown capability of 4 mA connected to the OCD pin is turned on. Figure 10 shows the OCD
operation.
This signal can be used to regulate the output current simply by connecting the OCD pin to
the EN pin and adding an external R-C, as shown in Figure 9. The off-time before
recovering normal operation can be easily programmed by means of the accurate
thresholds of the logic inputs.
IREF and, therefore, the output current detection threshold, are selectable by the RCL value,
following Equation 1 and Equation 2:
Equation 1
Isover = 5.6 A ± 30% at -25 °C < Tj < 125 °C if RCL = 0 (PROGCL connected to GND)
Equation 2
Isover = 22100
---------------- ± 10% at -25 °C < Tj < 125 °C if 5 k < RCL < 40 k
R CL
Figure 11 shows the output current protection threshold versus RCL value in the range 5 k
to 40 k.
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Circuit description
L6206Q
The disable time (tDISABLE), before recovering normal operation, can be easily programmed
by means of the accurate thresholds of the logic inputs. It is affected either by CEN or REN
values and its magnitude is reported in Figure 12. The delay time (tDELAY), before turning off
the bridge when an overcurrent has been detected, depends only on the CEN value. Its
magnitude is reported in Figure 13.
CEN is also used for providing immunity to pin EN against fast transient noises. Therefore
the value of CEN should be chosen as big as possible according to the maximum tolerable
delay time and the REN value should be chosen according to the desired disable time.
The resistor REN should be chosen in the range from 2.2 k to 180 k. Recommended
values for REN and CEN are respectively 100 k and 5.6 nF which allow a 200 µs disable
time to be obtained.
Figure 9. Overcurrent protection simplified schematic
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DocID022028 Rev 4
L6206Q
Circuit description
Figure 10. Overcurrent protection waveforms
IOUT
ISOVER
VEN
VDD
Vth(ON)
Vth(OFF)
VEN(LOW)
ON
OCD
OFF
ON
tDELAY
BRIDGE
tDISABLE
OFF
tOCD(ON)
tEN(FALL)
tOCD(OFF)
tEN(RISE)
tD(ON)EN
tD(OFF)EN
AM02564v1
Figure 11. Output current protection threshold versus RCL value
5
4.5
4
3.5
3
I SO VER
[A]
2.5
2
1.5
1
0.5
0 5k
10k
15k
20k
25k
R CL [ Ω ]
30k
35k
40k
AM02565v1
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Circuit description
L6206Q
Figure 12. tDISABLE versus CEN and REN (VDD = 5 V)
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Figure 13. tDELAY versus CEN (VDD = 5 V)
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4.4
Thermal protection
In addition to overcurrent detection, the L6206Q device integrates a thermal protection for
preventing device destruction in the case of junction overtemperature. It works by sensing
the die temperature by means of a sensitive element integrated in the die. The device
switches off when the junction temperature reaches 165 °C (typ. value) with 15 °C
hysteresis (typ. value).
14/27
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L6206Q
5
Application information
Application information
A typical application using the L6206Q device is shown in Figure 14. Typical component
values for the application are shown in Table 7. A high quality ceramic capacitor in the range
of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near
the L6206Q to improve the high frequency filtering on the power supply and reduce high
frequency transients generated by the switching. The capacitors connected from the
ENA/OCDA and ENB/OCDB nodes to ground set the shutdown time for bridge A and bridge
B respectively when an overcurrent is detected (see Section 4.3: Non-dissipative
overcurrent detection and protection). The two current sources (SENSEA and SENSEB)
should be connected to power ground with a trace length as short as possible in the layout.
To increase noise immunity, unused logic pins are best connected to 5 V (high logic level) or
GND (low logic level) (see Table 3.).
It is recommended to keep power ground and signal ground separated on the PCB.
Table 7. Component values for typical application
Component
Value
C1
100 F
C2
100 nF
CBOOT
220 nF
CP
10 nF
CENA
5.6 nF
CENB
5.6 nF
D1
1N4148
D2
1N4148
RCLA
5 k
RCLB
5 k
RENA
100 k
RENB
100 k
RP
100
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Application information
L6206Q
Figure 14. Typical application
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Note:
16/27
To reduce the IC thermal resistance, and therefore improve the dissipation path, the NC pins
can be connected to GND.
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L6206Q
6
Paralleled operation
Paralleled operation
The outputs of the L6206Q device can be paralleled to increase the output current capability
or reduce the power dissipation in the device at a given current level. It must be noted,
however, that the internal wire bond connections from the die to the power or sense pins of
the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in
parallel, the peak current rating is not increased as the total current must still flow through
one bond wire on the power supply or sense pin. In addition, the overcurrent detection
senses the sum of the current in the upper devices of each bridge (A or B) so connecting the
two halves of one bridge in parallel does not increase the overcurrent detection threshold.
For most applications the recommended configuration is half bridge 1 of bridge A paralleled
with the half bridge 1 of bridge B, and the same for the half bridges 2, as shown in
Figure 15. The current in the two devices connected in parallel share well as the RDS(ON) of
the devices on the same die is well matched. When connected in this configuration the
overcurrent detection circuit, which senses the current in each bridge (A and B), senses the
current in the upper devices connected in parallel independently and the sense circuit with
the lowest threshold trips first. With the enable pins connected in parallel, the first detection
of an overcurrent in either upper DMOS device turns off both bridges. Assuming that the two
DMOS devices share the current equally, the resulting overcurrent detection threshold is
twice the minimum threshold set by the resistors RCLA or RCLB in Figure 15. It is
recommended to use RCLA = RCLB.
In this configuration the resulting bridge has the following characteristics.
Equivalent device: full bridge
RDS(ON) 0.15 typ. value at Tj = 25 °C
5 A max. RMS load current
11.2 A max. OCD threshold
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Paralleled operation
L6206Q
Figure 15. Parallel connection for higher current
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To operate the device in parallel and maintain a lower overcurrent threshold, half bridge 1
and the half bridge 2 of bridge A can be connected in parallel and the same is done for
bridge B, as shown in Figure 16. In this configuration, the peak current for each half bridge
is still limited by the bond wires for the supply and sense pins so the dissipation in the device
is reduced, but the peak current rating is not increased.
When connected in this configuration the overcurrent detection circuit, senses the sum of
the current in upper devices connected in parallel. With the enable pins connected in
parallel, an overcurrent turns off both bridges.
Since the circuit senses the total current in the upper devices, the overcurrent threshold is
equal to the threshold set by the resistor RCLA or RCLB in Figure 16. RCLA sets the threshold
when outputs OUT1A and OUT2A are high and resistor RCLB sets the threshold when
outputs OUT1B and OUT2B are high.
It is recommended to use RCLA = RCLB.
In this configuration, the resulting bridge has the following characteristics.
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Equivalent device: full bridge
RDS(ON) 0.15 typ. value at Tj = 25 °C
2.5 A max. RMS load current
5.6 A max. OCD threshold
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Paralleled operation
Figure 16. Parallel connection with lower overcurrent threshold
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It is also possible to parallel the four half bridges to obtain a simple half bridge as shown in
Figure 17. In this configuration the overcurrent threshold is equal to twice the minimum
threshold set by the resistors RCLA or RCLB in Figure 17. It is recommended to use
RCLA = RCLB.
The resulting half bridge has the following characteristics.
Equivalent device: half bridge
RDS(ON) 0.075 typ. value at Tj = 25 °C
5 A max. RMS load current
11.2 A max. OCD threshold
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Figure 17. Paralleling the four half bridges
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Output current capability and IC power dissipation
7
Output current capability and IC power dissipation
Figure 18 and Figure 19 show the approximate relation between the output current and the
IC power dissipation using PWM current control driving two loads, for two different driving
types:
One full bridge ON at a time (Figure 18) in which only one load at a time is energized.
Two full bridges ON at the same time (Figure 19) in which two loads at the same time
are energized.
For a given output current and driving type the power dissipated by the IC can be easily
evaluated, in order to establish which package should be used and how large the onboard
copper dissipating area must be in order to guarantee a safe operating junction temperature
(125 °C maximum).
Figure 18. IC power dissipation vs. output current with one full bridge on at a time
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Figure 19. IC power dissipation vs. output current with two full bridges ON at the same time
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Thermal management
8
L6206Q
Thermal management
In most applications the power dissipation in the IC is the main factor that sets the maximum
current that can be delivered by the device in a safe operating condition. Therefore, it must
be taken into account very carefully. Besides the available space on the PCB, the right
package should be chosen considering the power dissipation. Heat sinking can be achieved
using copper on the PCB with proper area and thickness.
Table 8. Thermal data
Symbol
RthJA
Parameter
Thermal resistance junction-ambient
Package
VFQFPN48
(1)
Typ.
Unit
17
°C/W
1. VFQFPN48 mounted on EVAL6208Q rev. 1.1 board (see EVAL6208Q databrief): four-layer FR4 PCB with
a dissipating copper surface of about 45 cm2 on each layer and 25 via holes below the IC.
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Electrical characteristics curves
9
Electrical characteristics curves
Figure 20. Typical quiescent current vs. supply
voltage
Figure 21. Typical high-side RDS(on) vs. supply
voltage
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Figure 22. Normalized typical quiescent current
vs. switching frequency
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Figure 23. Normalized RDS(on) vs. junction
temperature (typical value)
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Figure 24. Typical low-side RDS(on) vs. supply
voltage
Figure 25. Typical drain-source diode forward
ON characteristic
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Package information
10
L6206Q
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10.1
VFQFPN48 (7 x 7 x 1.0 mm) package information
Figure 26. VFQFPN48 (7 x 7 x 1.0 mm) package outline
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Package information
Table 9. VFQFPN48 (7 x 7 x 1.0 mm) package mechanical data
Dimensions (mm)
Symbol
Min.
Typ.
Max.
A
0.80
0.90
1.00
A1
-
0.02
0.05
A2
-
0.65
1.00
A3
-
0.25
-
b
0.18
0.23
0.30
D
6.85
7.00
7.15
D2
4.95
5.10
5.25
E
6.85
7.00
7.15
E2
4.95
5.10
5.25
e
0.45
0.50
0.55
L
0.30
0.40
0.50
ddd
-
0.08
-
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Order codes
11
L6206Q
Order codes
Table 10. Ordering information
Order codes
Package
L6206Q
VFQFPN48 7 x 7 x 1.0 mm
L6206QTR
12
Packaging
Tray
Tape and reel
Revision history
Table 11. Document revision history
Date
Revision
15-Nov-2011
1
First release
10-Jun-2013
2
Unified package name to “VFQFPN48” in the whole document.
Corrected headings in Table 1 and Table 2 (replaced “Parameter” by
“Test condition”).
Updated Table 4 (Added subscripts to “If” and “ROPDR”).
Added titles to Equation 1 and Equation 2 and cross-references in
Section 4.3: Non-dissipative overcurrent detection and protection.
Corrected unit in Table 7 (row C1).
Updated Figure 13 (added subscripts to “tDELAY” and “CEN”).
Added Table 8: Thermal data in Section 8: Thermal management.
Updated Section 10: Package information (modified titles, reversed
order of Figure 26 and Table 9).
Minor corrections throughout document.
01-Aug-2013
3
Updated Figure 1 on page 1.
Corrected note 1. below Table 8 on page 22.
4
Updated Table 7 on page 15 (removed CREF row).
Updated Figure 9 on page 12 and Figure 14 on page 16 (replaced by
new figures).
Minor modifications throughout document.
10-Mar-2017
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Changes
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improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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