L6208

L6208 DMOS DRIVER FOR BIPOLAR STEPPER MOTOR s s s s s s s s s s s s s OPERATING SUPPLY VOLTAGE FROM 8 TO 52V 5.6A OUTPUT PEAK CURRENT (2.8A RMS) RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25°C OPERATING FREQUENCY UP TO 100KHz NON DISSIPATIVE OVERCURRENT PROTECTION DUAL INDEPENDENT CONSTANT tOFF PWM CURRENT CONTROLLERS FAST/SLOW DECAY MODE SELECTION FAST DECAY QUASI-SYNCHRONOUS RECTIFICATION DECODING LOGIC FOR STEPPER MOTOR FULL AND HALF STEP DRIVE CROSS CONDUCTION PROTECTION THERMAL SHUTDOWN UNDER VOLTAGE LOCKOUT INTEGRATED FAST FREE WHEELING DIODES PowerDIP24 (20+2+2) PowerSO36 SO24 (20+2+2) ORDERING NUMBERS: L6208N (PowerDIP24) L6208PD (PowerSO36) L6208D (SO24) TYPICAL APPLICATIONS s BIPOLAR STEPPER MOTOR DESCRIPTION The L6208 is a DMOS Fully Integrated Stepper Motor Driver with non-dissipative Overcurrent Protection, realized in MultiPower-BCD technology, which comBLOCK DIAGRAM bines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. The device includes all the circuitry needed to drive a two-phase bipolar stepper motor including: a dual DMOS Full Bridge, the constant off time PWM Current Controller that performs the chopping regulation and the Phase Sequence Generator, that generates the stepping sequence. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6208 features a non-dissipative overcurrent protection on the high side Power MOSFETs and thermal shutdown. VBOOT VBOOT VBOOT VBOOT CHARGE PUMP OCDA OCDB OVER CURRENT DETECTION 10V 10V VSA VCP OUT1A OUT2A THERMAL PROTECTION EN CONTROL GATE LOGIC SENSEA HALF/FULL CLOCK RESET CW/CCW STEPPING SEQUENCE GENERATION ONE SHOT MONOSTABLE PWM MASKING TIME + SENSE COMPARATOR BRIDGE A OVER CURRENT DETECTION GATE LOGIC BRIDGE B VSB VREFA RCA VOLTAGE REGULATOR OUT1B OUT2B SENSEB VREFB RCB 10V 5V D01IN1225 September 2003 1/27 L6208 ABSOLUTE MAXIMUM RATINGS Symbol VS VOD Parameter Supply Voltage Differential Voltage between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB Bootstrap Peak Voltage Input and Enable Voltage Range Voltage Range at pins VREFA and VREFB Test conditions VSA = VSB = VS VSA = VSB = VS = 60V; VSENSEA = VSENSEB = GND VSA = VSB = VS Value 60 60 Unit V V VBOOT VIN,VEN VREFA, VREFB VS + 10 -0.3 to +7 -0.3 to +7 -0.3 to +7 -1 to +4 V V V V V A VRCA, VRCB Voltage Range at pins RCA and RCB VSENSEA, VSENSEB IS(peak) Voltage Range at pins SENSEA and SENSEB Pulsed Supply Current (for each VS pin), internally limited by the overcurrent protection RMS Supply Current (for each VS pin) Storage and Operating Temperature Range VSA = VSB = VS; tPULSE < 1ms VSA = VSB = VS 7.1 IS Tstg, TOP 2.8 -40 to 150 A °C RECOMMENDED OPERATING CONDITIONS Symbol VS VOD Parameter Supply Voltage Differential Voltage Between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB Voltage Range at pins VREFA and VREFB Voltage Range at pins SENSEA and SENSEB RMS Output Current Operating Junction Temperature Switching Frequency -25 (pulsed tW < trr) (DC) Test Conditions VSA = VSB = VS VSA = VSB = VS; VSENSEA = VSENSEB -0.1 -6 -1 MIN 8 MAX 52 52 Unit V V VREFA, VREFB VSENSEA, VSENSEB IOUT Tj fsw 5 6 1 2.8 +125 100 V V V A °C KHz 2/27 L6208 THERMAL DATA Symbol Rth-j-pins Rth-j-case Rth-j-amb1 Rth-j-amb1 Rth-j-amb1 Rth-j-amb2 (1) (2) (3) (4) Description Maximum Thermal Resistance Junction-Pins Maximum Thermal Resistance Junction-Case Maximum Thermal Resistance Junction-Ambient (1) PowerDIP24 18 43 58 SO24 14 51 77 PowerSO36 1 35 15 62 Unit °C/W °C/W °C/W °C/W °C/W °C/W Maximum Thermal Resistance Junction-Ambient (2) Maximum Thermal Resistance Junction-Ambient (3) Maximum Thermal Resistance Junction-Ambient (4) Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the bottom side of 6cm2 (with a thickness of 35µm). Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm2 (with a thickness of 35µm). Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm2 (with a thickness of 35µm), 16 via holes and a ground layer. Mounted on a multi-layer FR4 PCB without any heat sinking surface on the board. PIN CONNECTIONS (Top View) GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 D99IN1084 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 GND N.C. N.C. VSB OUT2B N.C. VBOOT EN CONTROL HALF/FULL VREFB SENSEB RCB N.C. OUT1B N.C. N.C. GND CLOCK CW/CCW SENSEA RCA OUT1A GND GND OUT1B RCB SENSEB VREFB HALF/FULL 1 2 3 4 5 6 7 8 9 10 11 12 D99IN1083 24 23 22 21 20 19 18 17 16 15 14 13 VREFA RESET VCP OUT2A VSA GND GND VSB OUT2B VBOOT EN CONTROL N.C. N.C. VSA OUT2A N.C. VCP RESET VREFA CLOCK CW/CCW SENSEA RCA N.C. OUT1A N.C. N.C. GND PowerDIP24/SO24 PowerSO36 (5) (5) The slug is internally connected to pins 1,18,19 and 36 (GND pins). 3/27 L6208 PIN DESCRIPTION PACKAGE SO24/ PowerDIP24 PIN # 1 2 PowerSO36 PIN # 10 11 CLOCK CW/CCW Logic Input Logic Input Step Clock input. The state machine makes one step on each rising edge. Selects the direction of the rotation. HIGH logic level sets clockwise direction, whereas LOW logic level sets counterclockwise direction. If not used, it has to be connected to GND or +5V. Bridge A Source Pin. This pin must be connected to Power Ground through a sensing power resistor. RC Network Pin. A parallel RC network connected between this pin and ground sets the Current Controller OFF-Time of the Bridge A. Bridge A Output 1. Ground terminals. In PowerDIP24 and SO24 packages, these pins are also used for heat dissipation toward the PCB. On PowerSO36 package the slug is connected to these pins. Bridge B Output 1. RC Network Pin. A parallel RC network connected between this pin and ground sets the Current Controller OFF-Time of the Bridge B. Bridge B Source Pin. This pin must be connected to Power Ground through a sensing power resistor. Bridge B Current Controller Reference Voltage. Do not leave this pin open or connected to GND. Step Mode Selector. HIGH logic level sets HALF STEP Mode, LOW logic level sets FULL STEP Mode. If not used, it has to be connected to GND or +5V. Decay Mode Selector. HIGH logic level sets SLOW DECAY Mode. LOW logic level sets FAST DECAY Mode. If not used, it has to be connected to GND or +5V. Chip Enable. LOW logic level switches OFF all Power MOSFETs of both Bridge A and Bridge B. This pin is also connected to the collector of the Overcurrent and Thermal Protection to implement over current protection. If not used, it has to be connected to +5V through a resistor. Bootstrap Voltage needed for driving the upper Power MOSFETs of both Bridge A and Bridge B. Bridge B Output 2. Bridge B Power Supply Voltage. It must be connected to the Supply Voltage together with pin VSA Bridge A Power Supply Voltage. It must be connected to the Supply Voltage together with pin VSB Name Type Function 3 4 12 13 SENSEA RCA Power Supply RC Pin 5 6, 7, 18, 19 15 1, 18, 19, 36 OUT1A GND Power Output GND 8 9 22 24 OUT1B RCB Power Output RC Pin 10 11 12 25 26 27 SENSEB VREFB HALF/FULL Power Supply Analog Input Logic Input 13 28 CONTROL Logic Input 14 29 EN Logic Input (6) 15 16 17 20 30 32 33 4 VBOOT OUT2B VSB VSA Supply Voltage Power Output Power Supply Power Supply 4/27 L6208 PIN DESCRIPTION (continued) PACKAGE SO24/ PowerDIP24 PIN # 21 22 23 PowerSO36 PIN # 5 7 8 OUT2A VCP RESET Power Output Output Logic Input Bridge A Output 2. Charge Pump Oscillator Output. Reset Pin. LOW logic level restores the Home State (State 1) on the Phase Sequence Generator State Machine. If not used, it has to be connected to +5V. Bridge A Current Controller Reference Voltage. Do not leave this pin open or connected to GND. Name Type Function 24 9 VREFA Analog Input (6) Also connected at the output drain of the Over current and Thermal protection MOSFET. Therefore, it has to be driven putting in series a resistor with a value in the range of 2.2KΩ - 180KΩ, recommended 100KΩ. ELECTRICAL CHARACTERISTICS (Tamb = 25°C, Vs = 48V, unless otherwise specified) Symbol Parameter Test Conditions Min 6.6 5.6 All Bridges OFF; Tj = -25°C to 125°C (7) Typ 7 6 5 Max 7.4 6.4 10 Unit V V mA °C VSth(ON) Turn-on Threshold VSth(OFF) Turn-off Threshold IS Quiescent Supply Current Tj(OFF) Thermal Shutdown Temperature 165 Output DMOS Transistors RDS(ON) High-Side Switch ON Resistance Tj = 25 °C Tj =125 °C (7) Low-Side Switch ON Resistance Tj = 25 °C Tj =125 °C (7) IDSS Leakage Current EN = Low; OUT = VS EN = Low; OUT = GND Source Drain Diodes VSD trr tfr Forward ON Voltage Reverse Recovery Time Forward Recovery Time ISD = 2.8A, EN = LOW If = 2.8A 1.15 300 200 1.3 V ns ns -0.15 0.34 0.53 0.28 0.47 0.4 0.59 0.34 0.53 2 Ω Ω Ω Ω mA mA Logic Inputs (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW) VIL VIH Low level logic input voltage High level logic input voltage -0.3 2 0.8 7 V V 5/27 L6208 ELECTRICAL CHARACTERISTICS (continued) (Tamb = 25°C, Vs = 48V, unless otherwise specified) Symbol IIL IIH Vth(ON) Vth(OFF) Vth(HYS) Parameter Low Level Logic Input Current High Level Logic Input Current Turn-on Input Threshold Turn-off Input Threshold Input Threshold Hysteresis 0.8 0.25 Test Conditions GND Logic Input Voltage 7V Logic Input Voltage 1.8 1.3 0.5 Min -10 10 2.0 Typ Max Unit µA µA V V V Switching Characteristics tD(ON)EN Enable to Output Turn-on Delay Time (8) tD(OFF)EN Enable to Output Turn-off Delay Time (8) tRISE tFALL tDCLK Output Rise Time (8) Output Fall Time (8) Clock to Output Delay Time (9) ILOAD =2.8A, Resistive Load ILOAD =2.8A, Resistive Load ILOAD =2.8A, Resistive Load ILOAD =2.8A, Resistive Load ILOAD =2.8A, Resistive Load 100 250 400 ns 300 550 800 ns 40 40 2 250 250 ns ns µs tCLK(min)L Minimum Clock Time (10) tCLK(min) Minimum Clock Time (10) H 1 1 100 1 1 1 1 µs µs KHz µs µs µs µs fCLK tS(MIN) tH(MIN) tR(MIN) Clock Frequency Minimum Set-up Time (11) Minimum Hold Time (11) Minimum Reset Time (11) tRCLK(MIN Minimum Reset to Clock Delay ) Time (11) tDT fCP Dead Time Protection Charge Pump Frequency Tj = -25°C to 125°C (7) 0.5 1 0.6 µs 1 MHz PWM Comparator and Monostable IRCA, IRCB Source Current at pins RCA and RCB Voffset tPROP tBLANK tON(MIN) Offset Voltage on Sense Comparator Turn OFF Propagation Delay (12) Internal Blanking Time on SENSE pins Minimum On Time VRCA = VRCB = 2.5V VREFA, VREFB = 0.5V 3.5 5.5 ±5 500 1 1.5 2 mA mV ns µs µs 6/27 L6208 ELECTRICAL CHARACTERISTICS (continued) (Tamb = 25°C, Vs = 48V, unless otherwise specified) Symbol tOFF Parameter PWM Recirculation Time Test Conditions ROFF = 20KΩ; COFF = 1nF ROFF = 100KΩ; COFF = 1nF IBIAS Input Bias Current at pins VREFA and VREFB Min Typ 13 61 10 Max Unit µs µs µA Over Current Protection ISOVER ROPDR Input Supply Overcurrent Protection Threshold Open Drain ON Resistance Tj = -25°C to 125°C (7) I = 4mA I = 4mA; CEN < 100pF I = 4mA; CEN < 100pF 4 5.6 40 200 100 7.1 60 A Ω ns ns tOCD(ON) OCD Turn-on Delay Time (13) tOCD(OFF) OCD Turn-off Delay Time (13) (7) (8) (9) (10) (11) (12) (13) Tested at 25°C in a restricted range and guaranteed by characterization. See Fig. 1. See Fig. 2. See Fig. 3. See Fig. 4. Measured applying a voltage of 1V to pin SENSE and a voltage drop from 2V to 0V to pin VREF. See Fig. 5. Figure 1. Switching Characteristic Definition EN Vth(ON) Vth(OFF) t IOUT 90% 10% D01IN1316 t tFALL tD(OFF)EN tD(ON)EN tRISE 7/27 L6208 Figure 2. Clock to Output Delay Time CLOCK Vth(ON) t IOUT D01IN1317 t tDCLK Figure 3. Minimum Timing Definition; Clock Input CLOCK Vth(ON) tCLK(MIN)L Vth(OFF) Vth(OFF) tCLK(MIN)H D01IN1318 Figure 4. Minimum Timing Definition; Logic Inputs CLOCK Vth(ON) LOGIC INPUTS tS(MIN) RESET Vth(OFF) Vth(ON) tH(MIN) tR(MIN) tRCLK(MIN) D01IN1319 8/27 L6208 Figure 5. Overcurrent Detection Timing Definition IOUT ISOVER ON BRIDGE OFF VEN 90% 10% tOCD(ON) tOCD(OFF) D02IN1399 CIRCUIT DESCRIPTION POWER STAGES and CHARGE PUMP The L6208 integrates two independent Power MOS Full Bridges. Each Power MOS has an RDS(ON) = 0.3Ω (typical value @ 25°C), with intrinsic fast freewheeling diode. Switching patterns are generated by the PWM Current Controller and the Phase Sequence Generator (see below). Cross conduction protection is achieved using a dead time (tDT = 1µs typical value) between the switch off and switch on of two Power MOSFETSs in one leg of a bridge. Pins VSA and VSB MUST be connected together to the supply voltage VS. The device operates with a supply voltage in the range from 8V to 52V. It has to be noticed that the RDS(ON) increases of some percents when the supply voltage is in the range from 8V to 12V (see Fig. 34 and 35). Using N-Channel Power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply voltage VBOOT is obtained through an internal Oscillator and few external components to realize a charge pump circuit as shown in Figure 6. The oscillator output (VCP) is a square wave at 600KHz (typical) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 1. Table 1. Charge Pump External Components Values CBOOT CP RP D1 D2 220nF 10nF 100Ω 1N4148 1N4148 9/27 L6208 Figure 6. Charge Pump Circuit VS D1 D2 RP CP VCP VBOOT VSA VSB D01IN1328 CBOOT LOGIC INPUTS Pins CONTROL, HALF/FULL, CLOCK, RESET and CW/CCW are TTL/CMOS and uC compatible logic inputs. The internal structure is shown in Fig. 7. Typical value for turn-on and turn-off thresholds are respectively Vth(ON)= 1.8V and Vth(OFF)= 1.3V. Pin EN (Enable) has identical input structure with the exception that the drain of the Overcurrent and thermal protection MOSFET is also connected to this pin. Due to this connection some care needs to be taken in driving this pin. The EN input may be driven in one of two configurations as shown in Fig. 8 or 9. If driven by an open drain (collector) structure, a pull-up resistor REN and a capacitor CEN are connected as shown in Fig. 8. If the driver is a standard Push-Pull structure the resistor REN and the capacitor CEN are connected as shown in Fig. 9. The resistor REN should be chosen in the range from 2.2KΩ to 180KΩ. Recommended values for REN and CEN are respectively 100KΩ and 5.6nF. More information on selecting the values is found in the Overcurrent Protection section. Figure 7. Logic Inputs Internal Structure 5V ESD PROTECTION D01IN1329 Figure 8. EN Pin Open Collector Driving 5V REN OPEN COLLECTOR OUTPUT EN CEN ESD PROTECTION D01IN1330 5V Figure 9. EN Pin Push-Pull Driving 5V REN PUSH-PULL OUTPUT EN CEN ESD PROTECTION D01IN1331 10/27 L6208 PWM CURRENT CONTROL The L6208 includes a constant off time PWM current controller for each of the two bridges. The current control circuit senses the bridge current by sensing the voltage drop across an external sense resistor connected between the source of the two lower power MOS transistors and ground, as shown in Figure 10. As the current in the motor builds up the voltage across the sense resistor increases proportionally. When the voltage drop across the sense resistor becomes greater than the voltage at the reference input (VREFA or VREFB) the sense comparator triggers the monostable switching the bridge off. The power MOS remain off for the time set by the monostable and the motor current recirculates as defined by the selected decay mode, described in the next section. When the monostable times out the bridge will again turn on. Since the internal dead time, used to prevent cross conduction in the bridge, delays the turn on of the power MOS, the effective off time is the sum of the monostable time plus the dead time. Figure 10. PWM Current Controller Simplified Schematic VSA (or B) TO GATE LOGIC BLANKING TIME MONOSTABLE 1µs FROM THE LOW-SIDE GATE DRIVERS 2H MONOSTABLE SET 1H 2 PHASE STEPPER MOTOR 5mA Q (0) (1) S R BLANKER IOUT OUT2A(or B) DRIVERS + DEAD TIME DRIVERS + DEAD TIME OUT1A(or B) 5V 2.5V + SENSE COMPARATOR + COMPARATOR OUTPUT RCA(or B) COFF ROFF - 2L 1L VREFA(or B) RSENSE SENSEA(or B) D01IN1332 Figure 11 shows the typical operating waveforms of the output current, the voltage drop across the sensing resistor, the RC pin voltage and the status of the bridge. More details regarding the Synchronous Rectification and the output stage configuration are included in the next section. Immediately after the Power MOS turns on, a high peak current flows through the sensing resistor due to the reverse recovery of the freewheeling diodes. The L6208 provides a 1µs Blanking Time tBLANK that inhibits the comparator output so that this current spike cannot prematurely re-trigger the monostable. 11/27 L6208 Figure 11. Output Current Regulation Waveforms IOUT VREF RSENSE tOFF 1µs tBLANK tON tOFF 1µs tBLANK VSENSE VREF 0 Slow Decay c Fast De ay Slow Decay c Fast De ay VRC 5V 2.5V tRCRISE tRCRISE tRCFALL 1µs tDT ON SYNCHRONOUS OR QUASI SYNCHRONOUS RECTIFICATION D01IN1334 tRCFALL 1µs tDT OFF B C D A B C D Figure 12 shows the magnitude of the Off Time tOFF versus COFF and ROFF values. It can be approximately calculated from the equations: tRCFALL = 0.6 · ROFF · COFF tOFF = tRCFALL + tDT = 0.6 · ROFF · COFF + tDT where ROFF and COFF are the external component values and tDT is the internally generated Dead Time with: 20KΩ ≤ ROFF ≤ 100KΩ 0.47nF ≤ COFF ≤ 100nF tDT = 1µs (typical value) Therefore: tOFF(MIN) = 6.6µs tOFF(MAX) = 6ms These values allow a sufficient range of tOFF to implement the drive circuit for most motors. The capacitor value chosen for COFF also affects the Rise Time tRCRISE of the voltage at the pin RCOFF. The Rise Time tRCRISE will only be an issue if the capacitor is not completely charged before the next time the monostable is triggered. Therefore, the on time tON, which depends by motors and supply parameters, has to be bigger than tRCRISE for allowing a good current regulation by the PWM stage. Furthermore, the on time tON can not be smaller than the minimum on time tON(MIN). 12/27 L6208 t O N > t O N ( MIN ) = 1.5 µ s (typ. value) t O N > t RCRISE – t DT    tRCRISE = 600 · COFF Figure 13 shows the lower limit for the on time tON for having a good PWM current regulation capacity. It has to be said that tON is always bigger than tON(MIN) because the device imposes this condition, but it can be smaller than tRCRISE - tDT. In this last case the device continues to work but the off time tOFF is not more constant. So, small COFF value gives more flexibility for the applications (allows smaller on time and, therefore, higher switching frequency), but, the smaller is the value for COFF, the more influential will be the noises on the circuit performance. Figure 12. tOFF versus COFF and ROFF 1 .10 4 R off = 100kΩ 3 1 .10 R off = 47kΩ R off = 20kΩ toff [µs] 100 10 1 0.1 1 Coff [nF] 10 100 Figure 13. Area where tON can vary maintaining the PWM regulation. 100 ton(min) [µs] 10 1.5µs (typ. value) 1 0.1 1 Coff [nF] 10 100 13/27 L6208 DECAY MODES The CONTROL input is used to select the behavior of the bridge during the off time. When the CONTROL pin is low, the Fast Decay mode is selected and both transistors in the bridge are switched off during the off time. When the CONTROL pin is high, the Slow Decay mode is selected and only the low side transistor of the bridge is switched off during the off time. Figure 14 shows the operation of the bridge in the Fast Decay mode. At the start of the off time, both of the power MOS are switched off and the current recirculates through the two opposite free wheeling diodes. The current decays with a high di/dt since the voltage across the coil is essentially the power supply voltage. After the dead time, the lower power MOS in parallel with the conducting diode is turned on in synchronous rectification mode. In applications where the motor current is low it is possible that the current can decay completely to zero during the off time. At this point if both of the power MOS were operating in the synchronous rectification mode it would then be possible for the current to build in the opposite direction. To prevent this only the lower power MOS is operated in synchronous rectification mode. This operation is called Quasi-Synchronous Rectification Mode. When the monostable times out, the power MOS are turned on again after some delay set by the dead time to prevent cross conduction. Figure 15 shows the operation of the bridge in the Slow Decay mode. At the start of the off time, the lower power MOS is switched off and the current recirculates around the upper half of the bridge. Since the voltage across the coil is low, the current decays slowly. After the dead time the upper power MOS is operated in the synchronous rectification mode. When the monostable times out, the lower power MOS is turned on again after some delay set by the dead time to prevent cross conduction. Figure 14. Fast Decay Mode Output Stage Configurations A) ON TIME D01IN1335 B) 1µs DEAD TIME C) QUASI-SYNCHRONOUS RECTIFICATION D) 1µs SLOW DECAY Figure 15. Slow Decay Mode Output Stage Configurations A) ON TIME D01IN1336 B) 1µs DEAD TIME C) SYNCHRONOUS RECTIFICATION D) 1µs DEAD TIME STEPPING SEQUENCE GENERATION The phase sequence generator is a state machine that provides the phase and enable inputs for the two bridges to drive a stepper motor in either full step or half step. Two full step modes are possible, the Normal Drive Mode where both phases are energized each step and the Wave Drive Mode where only one phase is energized at a 14/27 L6208 time. The drive mode is selected by the HALF/FULL input and the current state of the sequence generator as described below. A rising edge of the CLOCK input advances the state machine to the next state. The direction of rotation is set by the CW/CCW input. The RESET input resets the state machine to state. HALF STEP MODE A HIGH logic level on the HALF/FULL input selects Half Step Mode. Figure 16 shows the motor current waveforms and the state diagram for the Phase Sequencer Generator. At Start-Up or after a RESET the Phase Sequencer is at state 1. After each clock pulse the state changes following the sequence 1,2,3,4,5,6,7,8,… if CW/ CCW is high (Clockwise movement) or 1,8,7,6,5,4,3,2,… if CW/CCW is low (Counterclockwise movement). NORMAL DRIVE MODE (Full-step two-phase-on) A LOW level on the HALF/FULL input selects the Full Step mode. When the low level is applied when the state machine is at an ODD numbered state the Normal Drive Mode is selected. Figure Fig. 17 shows the motor current waveform state diagram for the state machine of the Phase Sequencer Generator. The Normal Drive Mode can easily be selected by holding the HALF/FULL input low and applying a RESET. AT start -up or after a RESET the State Machine is in state1. While the HALF/FULL input is kept low, state changes following the sequence 1,3,5,7,… if CW/CCW is high (Clockwise movement) or 1,7,5,3,… if CW/CCW is low (Counterclockwise movement). WAVE DRIVE MODE (Full-step one-phase-on) A LOW level on the pin HALF/FULL input selects the Full Step mode. When the low level is applied when the state machine is at an EVEN numbered state the Wave Drive Mode is selected. Figure 18 shows the motor current waveform and the state diagram for the state machine of the Phase Sequence Generator. To enter the Wave Drive Mode the state machine must be in an EVEN numbered state. The most direct method to select the Wave Drive Mode is to first apply a RESET, then while keeping the HALF/FULL input high apply one pulse to the clock input then take the HALF/FULL input low. This sequence first forces the state machine to sate 1. The clock pulse, with the HALF/FULL input high advances the state machine from state 1 to either state 2 or 8 depending on the CW/CCW input. Starting from this point, after each clock pulse (rising edge) will advance the state machine following the sequence 2,4,6,8,… if CW/CCW is high (Clockwise movement) or 8,6,4,2,… if CW/ CCW is low (Counterclockwise movement). Figure 16. Half Step Mode IOUTA 3 4 5 2 6 IOUTB 1 8 7 Start Up or Reset CLOCK D01IN1320 1 2 3 4 5 6 7 8 Figure 17. Normal Drive Mode IOUTA 3 4 5 2 6 IOUTB 1 8 7 Start Up or Reset CLOCK D01IN1322 1 3 5 7 1 3 5 7 15/27 L6208 Figure 18. Wave Drive Mode IOUTA 3 4 5 2 6 IOUTB 1 8 7 CLOCK Start Up or Reset D01IN1321 2 4 6 8 2 4 6 8 NON-DISSIPATIVE OVERCURRENT PROTECTION The L6208 integrates an Overcurrent Detection Circuit (OCD). This circuit provides protection against a short circuit to ground or between two phases of the bridge. With this internal over current detection, the external current sense resistor normally used and its associated power dissipation are eliminated. Figure 19 shows a simplified schematic of the overcurrent detection circuit. To implement the over current detection, a sensing element that delivers a small but precise fraction of the output current is implemented with each high side power MOS. Since this current is a small fraction of the output current there is very little additional power dissipation. This current is compared with an internal reference current IREF. When the output current reaches the detection threshold (typically 5.6A) the OCD comparator signals a fault condition. When a fault condition is detected, the EN pin is pulled below the turn off threshold (1.3V typical) by an internal open drain MOS with a pull down capability of 4mA. By using an external R-C on the EN pin, the off time before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs. Figure 19. Overcurrent Protection Simplified Schematic OUT1A POWER SENSE 1 cell VSA OUT2A HIGH SIDE DMOSs OF THE BRIDGE A I1A POWER DMOS n cells I2A POWER DMOS n cells POWER SENSE 1 cell TO GATE LOGIC µC or LOGIC + OCD COMPARATOR I1A / n (I1A+I2A) / n I2A / n VDD REN. CEN. EN RDS(ON) 40Ω TYP. INTERNAL OPEN-DRAIN IREF OVER TEMPERATURE OCD COMPARATOR FROM THE BRIDGE B D01IN1337 16/27 L6208 Figure 20 shows the Overcurrent Detection operation. The Disable Time tDISABLE before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs. It is affected whether by CEN and REN values and its magnitude is reported in Figure 21. The Delay Time tDELAY before turning off the bridge when an overcurrent has been detected depends only by CEN value. Its magnitude is reported in Figure 22. CEN is also used for providing immunity to pin EN against fast transient noises. Therefore the value of CEN should be chosen as big as possible according to the maximum tolerable Delay Time and the REN value should be chosen according to the desired Disable Time. The resistor REN should be chosen in the range from 2.2KΩ to 180KΩ. Recommended values for REN and CEN are respectively 100KΩ and 5.6nF that allow obtaining 200µs Disable Time. Figure 20. Overcurrent Protection Waveforms IOUT ISOVER VEN VDD Vth(ON) Vth(OFF) VEN(LOW) ON OCD OFF ON BRIDGE OFF tOCD(ON) tEN(FALL) tD(OFF)EN tOCD(OFF) tEN(RISE) tD(ON)EN D02IN1400 tDELAY tDISABLE 17/27 L6208 Figure 21. tDISABLE versus C EN and REN (VDD = 5V). 3 1 . 10 R EN = 220 kΩ R EN = 100 k Ω R EN = 4 7 k Ω R EN = 3 3 k Ω R EN = 1 0 k Ω tDISABLE [µs] 100 10 1 1 10 1 00 C E N [n F ] Figure 22. tDELAY versus CEN (VDD = 5V). 10 tdelay [µs] 1 0.1 1 10 Cen [nF] 100 THERMAL PROTECTION In addition to the Ovecurrent Protection, the L6208 integrates a Thermal Protection for preventing the device destruction in case of junction over temperature. It works sensing the die temperature by means of a sensible element integrated in the die. The device switch-off when the junction temperature reaches 165°C (typ. value) with 15°C hysteresis (typ. value). 18/27 L6208 APPLICATION INFORMATION A typical Bipolar Stepper Motor Driver application using L6208 is shown in Fig. 23. Typical component values for the application are shown in Table 2. A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near the L6208 to improve the high frequency filtering on the power supply and reduce high frequency transients generated by the switching. The capacitor connected from the EN input to ground sets the shut down time when an over current is detected (see Overcurrent Protection). The two current sensing inputs (SENSEA and SENSEB) should be connected to the sensing resistors with a trace length as short as possible in the layout. The sense resistors should be non-inductive resistors to minimize the di/dt transients across the resistor. To increase noise immunity, unused logic pins (except EN) are best connected to 5V (High Logic Level) or GND (Low Logic Level) (see pin description). It is recommended to keep Power Ground and Signal Ground separated on PCB. Table 2. Component Values for Typical Application C1 C2 CA CB CBOOT CP CEN CREF 100µF 100nF 1nF 1nF 220nF 10nF 5.6nF 68nF D1 D2 RA RB REN RP RSENSEA RSENSEB 1N4148 1N4148 39KΩ 39KΩ 100KΩ 100Ω 0.3Ω 0.3Ω Figure 23. Typical Application + VS 8-52VDC C1 C2 D1 CP VSA VSB 20 17 VREFA VREFB CREF VCP 22 23 14 15 3 10 5 21 13 12 1 2 OUT1B OUT2B GND GND GND GND 8 16 18 19 6 7 9 RCB RB 4 RCA RA CB RESET EN REN ENABLE CEN CONTROL HALF/FULL CLOCK CW/CCW CA RESET 24 11 VREF = 0-1V POWER GROUND - RP D2 SIGNAL GROUND CBOOT VBOOT RSENSEA RSENSEB SENSEA SENSEB OUT1A OUT2A M FAST/SLOW DECAY HALF/FULL CLOCK CW/CCW D01IN1341 19/27 L6208 Output Current Capability and IC Power Dissipation In Fig. 24, 25, 26 and 27 are shown the approximate relation between the output current and the IC power dissipation using PWM current control driving a two-phase stepper motor, for different driving sequences: – HALF STEP mode (Fig. 24) in which alternately one phase / two phases are energized. – NORMAL DRIVE (FULL-STEP TWO PHASE ON) mode (Fig. 25) in which two phases are energized during each step. – WAVE DRIVE (FULL-STEP ONE PHASE ON) mode (Fig. 26) in which only one phase is energized at each step. – MICROSTEPPING mode (Fig. 27), in which the current follows a sine-wave profile, provided through the Vref pins. For a given output current and driving sequence the power dissipated by the IC can be easily evaluated, in order to establish which package should be used and how large must be the on-board copper dissipating area to guarantee a safe operating junction temperature (125°C maximum). Figure 24. IC Power Dissipation versus Output Current in HALF STEP Mode. H ALF STEP 10 8 6 IA IB I OUT I OUT PD [W] 4 2 0 0 0.5 1 1.5 2 2.5 3 Test Conditions: Supply Voltage = 24V No PWM f SW = 30 kHz (slow decay) I OUT [A] Figure 25. IC Power Dissipation versus Output Current in NORMAL Mode (full step two phase on). NORM AL DRIVE 10 8 6 IA I OUT IB I OUT PD [W ] 4 2 0 Test Conditions: Supply Volt age =24 V 0 0.5 1 1.5 2 2.5 3 I OUT [A ] No PWM f SW = 30 kHz (slow decay) 20/27 L6208 Figure 26. IC Power Dissipation versus Output Current in WAVE Mode (full step one phase on). WAVE DRIVE 10 8 6 IA IB I OUT PD [W] 4 2 0 I OUT Test Conditions: Supply Voltage = 24V No PW M fSW = 3 0 kHz (slow decay) 0 0.5 1 1.5 2 2.5 3 I OUT [A] Figure 27. IC Power Dissipation versus Output Current in MICROSTEPPING Mode. MICROSTEPPING 10 8 6 IA I OUT I OUT IB PD [W] 4 2 0 0 0.5 1 1.5 2 2.5 3 I OUT [A] Test Conditions: Supply Voltage = 24V f SW = 30 kHz (slow decay) f SW = 50 kHz (slow decay) Thermal Management In most applications the power dissipation in the IC is the main factor that sets the maximum current that can be delivered by the device in a safe operating condition. Therefore, it has to be taken into account very carefully. Besides the available space on the PCB, the right package should be chosen considering the power dissipation. Heat sinking can be achieved using copper on the PCB with proper area and thickness. Figures 28, 29 and 30 show the Junction-to-Ambient Thermal Resistance values for the PowerSO36, PowerDIP24 and SO24 packages. For instance, using a PowerSO package with copper slug soldered on a 1.5mm copper thickness FR4 board with 6cm2 dissipating footprint (copper thickness of 35µm), the Rth(j-amb) is about 35°C/W. Fig. 31 shows mounting methods for this package. Using a multi-layer board with vias to a ground plane, thermal impedance can be reduced down to 15°C/W. 21/27 L6208 Figure 28. PowerSO36 Junction-Ambient Thermal Resistance versus On-Board Copper Area. ºC / W 43 38 33 W ith o ut G ro u nd La yer 28 W ith Gro un d La yer W ith Gro un d La yer+ 16 via H o le s 23 18 On-Board Copper Area 13 1 2 3 4 5 6 7 8 9 10 11 12 13 s q. cm Figure 29. PowerDIP24 Junction-Ambient Thermal Resistance versus On-Board Copper Area. ºC / W 49 48 47 46 45 44 43 42 41 40 39 1 2 3 4 5 6 7 8 9 10 11 12 s q . cm C o p pe r Are a is o n To p S i de C o p pe r Are a is o n Bo tto m S id e On-Board Copper Area Figure 30. SO24 Junction-Ambient Thermal Resistance versus On-Board Copper Area. ºC / W 68 66 64 62 60 58 56 54 52 50 48 1 2 3 4 5 6 7 8 9 10 11 12 s q. cm C o pp er A re a is o n T op S id e On-Board Copper Area Figure 31. Mounting the PowerSO Package. Slug soldered to PCB with dissipating area Slug soldered to PCB with dissipating area plus ground layer Slug soldered to PCB with dissipating area plus ground layer contacted through via holes 22/27 L6208 Figure 32. Typical Quiescent Current vs. Supply Voltage Iq [m A] 5.6 Figure 35. Typical High-Side RDS(ON) vs. Supply Voltage RDS(ON) [Ω] fsw = 1kHz Tj = 25°C Tj = 85°C Tj = 125°C 0.380 0.376 0.372 0.368 0.364 0.360 0.356 0.352 0.348 0.344 0.340 0.336 5.4 Tj = 25°C 5.2 5.0 4.8 4.6 0 10 20 30 V S [ V] 40 50 60 0 5 10 15 VS [V] 20 25 30 Figure 33. Normalized Typical Quiescent Current vs. Switching Frequency Iq / (Iq @ 1 kHz) Figure 36. Normalized RDS(ON) vs.Junction Temperature (typical value) R DS(ON) / (R DS(ON) @ 2 5 °C) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0 20 40 fSW [kHz] 1.6 1.4 1.2 1.0 0.8 60 80 100 0 20 40 60 80 100 120 140 T j [°C ] Figure 34. Typical Low-Side RDS(ON) vs. Supply Voltage R DS(ON) [Ω ] 0.300 0.296 Tj = 25°C Figure 37. Typical Drain-Source Diode Forward ON Characteristic ISD [A] 3.0 Tj = 25°C 2.5 2.0 1.5 1.0 0.5 0.0 700 0.292 0.288 0.284 0.280 0.276 0 5 10 15 V S [V] 20 25 30 800 900 1000 VSD [mV] 1100 1200 1300 23/27 L6208 mm TYP. inch TYP. DIM. A a1 a2 a3 b c D (1) D1 E e e3 E1 (1) E2 E3 E4 G H h L N S MIN. 0.10 0 0.22 0.23 15.80 9.40 13.90 MAX. 3.60 0.30 3.30 0.10 0.38 0.32 16.00 9.80 14.50 MIN. 0.004 0 0.008 0.009 0.622 0.370 0.547 MAX. 0.141 0.012 0.130 0.004 0.015 0.012 0.630 0.385 0.570 OUTLINE AND MECHANICAL DATA 0.65 11.05 10.90 5.80 2.90 0 15.50 0.80 11.10 0.429 2.90 6.20 0.228 3.20 0.114 0.10 0 15.90 0.610 1.10 1.10 0.031 10°(max.) 8 °(max.) 0.0256 0.435 0.437 0.114 0.244 0.126 0.004 0.626 0.043 0.043 PowerSO36 (1): "D" and "E1" do not include mold flash or protrusions - Mold flash or protrusions shall not exceed 0.15mm (0.006 inch) - Critical dimensions are "a3", "E" and "G". N N a2 A DETAIL A e3 H lead e A a1 E DETAIL A c DETAIL B D a3 36 19 slug BOTTOM VIEW E3 B E2 E1 DETAIL B 0.35 Gage Plane D1 1 1 8 -C- S h x 45˚ b ⊕ 0.12 M L SEATING PLANE G C AB PSO36MEC (COPLANARITY) 24/27 L6208 DIM. MIN. A A1 A2 B B1 c D E e E1 e1 L M 3.180 6.350 0.410 1.400 0.200 31.62 7.620 0.380 mm TYP. MAX. 4.320 0.015 3.300 0.460 1.520 0.250 31.75 0.510 1.650 0.300 31.88 8.260 2.54 6.600 7.620 3.430 0.125 6.860 0.250 0.016 0.055 0.008 1.245 0.300 MIN. inch TYP. MAX. 0.170 OUTLINE AND MECHANICAL DATA 0.130 0.018 0.060 0.010 1.250 0.020 0.065 0.012 1.255 0.325 0.100 0.260 0.300 0.270 0.135 Powerdip 24 0˚ min, 15˚ max. E1 A2 A L A1 B B1 e e1 D 24 13 c 1 12 M SDIP24L 25/27 L6208 mm DIM. MIN. A A1 B C D (1) E e H h L k ddd 10.0 0.25 0.40 2.35 0.10 0.33 0.23 15.20 7.40 1.27 10.65 0;75 1.27 0.394 0.010 0.016 TYP. MAX. 2.65 0.30 0.51 0.32 15.60 7.60 MIN. 0.093 0.004 0.013 0.009 0.598 0.291 inch TYP. MAX. 0.104 0.012 0.200 0.013 0.614 0.299 0.050 0.419 0.030 0.050 Weight: 0.60gr OUTLINE AND MECHANICAL DATA 0˚ (min.), 8˚ (max.) 0.10 0.004 (1) “D” dimension does not include mold flash, protusions or gate burrs. Mold flash, protusions or gate burrs shall not exceed 0.15mm per side. SO24 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2003 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 0070769 C www.st.com 26/27 L6208 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2003 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 27/27