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L6353D

L6353D

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    L6353D - SMART DRIVER FOR POWER MOS & IGBT - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
L6353D 数据手册
® L6353 SMART DRIVER FOR POWER MOS & IGBT PEAK HIGH OUTPUT CURRENT CAPABILITY (+8A) WIDE SUPPLY VOLTAGE RANGE (12.5 TO 18V) 0 TO –7.5V NEGATIVE BIAS VOLTAGE SUPPLY RANGE OVER CURRENT AND DESATURATION PROTECTION OF THE EXTERNAL POWER DEVICE (EXTERNALLY PROGRAMMABLE) LATCH-UP PROTECTION (FOR IGBT) TWO STEPS TURN-ON (PROGRAMMABLE) PROTECTION AGAINST POSITIVE SUPPLY UNDER-VOLTAGE INPUT COMPATIBLE WITH OPTOCOUPLER OR PULSE TRANSFORMER PROGRAMMABLE TURN-ON DELAY THERMAL PROTECTION WITH ON-CHIP OVER-TEMPERATURE ALARM AND TURNOFF PROCEDURE OPERATING FREQUENCY UP TO 100kHz BLOCK DIAGRAM DIP16 SO16 ORDERING NUMBERS: L6353 (DIP) L6353D (SO) DESCRIPTION The L6353 device is a smart driver, with all the drive and protection know-how ”on board”. Available in both DIP and SO package, it can be triggered with a logic level or with the signal from an optocoupler or a pulse transformer. It filters parasitic input signals and drives any MOS or IGBT. DELAY SUPPLY UV SENSE REFERENCES + − 1.25V INPUT + − FILTER 200ns THERMAL SHUTDOWN LOGIC 3.15V OUT1 CLAMPING + − VCC REF VPOS 2.5V 300 µA SELECT OUT1 CLAMP_PROG OUT2 − 3.15V 1.25V INV_OUT 3.75V + − + + ALARM − 7.5V COM D94IN106B VSS MON_DELAY 4V ON_SENSE ON_LEV_PROG February 2000 1/11 L6353 DESCRIPTION (continued) It monitors the on-state voltage drop of the driven power device and protects it against overload and short circuit. The on-state voltage drop level is externally programmable from 5 to 15V. This function is inhibited during the turn-on of the external power device for an externally programmable period. An internal inhibition time of 200ns avoids false triggering. PIN CONNECTION (top view) Overload or overheating are signalled on an alarm output. If temperature continues to increase the power output is switched off and maintained in the off-state until the temperature decreases below the low threshold. A programmable turn-on delay avoids cross conduction in bridge configurations. To preserve the external power device (especially IGBT) from the risk of latch-up, the gate voltage can be risen in two different steps (of which the first is externally programmable from 7 to 11V). OUT1 VCC VPOS CLAMP_PROG INV_OUT ALARM MON_DELAY VREF 1 2 3 4 5 6 7 8 D94IN113A 16 15 14 13 12 11 10 9 OUT2 COM VSS ON_SENSE ON_LEV_PROG SELECT DELAY INPUT ABSOLUTE MAXIMUM RATINGS Symbol VCC VSS VPOS - VOUT1 Parameter Supply Voltage referred to COM pin Negative Supply Voltage referred to COM pin Collector-Emitter Voltage of High Side NPN Drain-Source Voltage of Low Side DMOS Externally Forced Voltage (pin 9) Externally Forced Voltage (pins 4,7,10, 11, 12) Sink Current pin Delay Sink Current Pin Mon_Delay Voltage on ON_SENSE Pin Positive Output Current (tp ≤1ms) (peak) Negative Output Current (tp ≤1ms) (peak) Output Current in INV_OUT Pin Output Current in ALARM Pin Total Power Dissipation Operating Temperature Range Storage Temperature Value 20 – 8 to 0 25 25 -0.3 to VCC -0.3 to 7 3 3 VSS-0.3 to VCC 8 8 ±20 ±20 internally limited -25 to +85 -50 to +150 Unit V V V V V V mA mA V A A mA mA °C °C VOUT2 - VSS VEXT1 VEXT2 IDELAY IMON_DELAY VON_SENSE IOUT1 IOUT2 IINV_OUT IALARM Ptot Tamb Tstg THERMAL DATA Symbol Rthj-ambient Parameter Thermal Resistance Junction-ambient Max DIP16 80 SO16 90 Unit °C/W 2/11 L6353 PIN FUNCTIONS N. 1 2 3 4 Name OUT1 VCC VPOS CLAMP_PROG Function Output of high side driver (emitter of power NPN transistor). Positive Supply Voltage (referred to COM). See under voltage lockout functioning Positive Bias Voltage (collector of the NPN power transistor). First Step of the Gate Voltage Programming. The programming is achieved setting an appropriate voltage on this pin (i.e. using a resistence voltage divider). Inverted Output Driver Status. The buffer output is able to drive some auxiliary circuit (i.e. a LED). Diagnostic Output Signal. A fault condition is signalled by this output buffer. VON Monitor Delay. An R-C network connected between this, the COM and the V REF pins, define tMON_DELAY time interval (see fig 4) Output of the 5V/10mA internal voltage reference. Input signal. The driving signal can be a logic level either active LOW (inverted mode) or HIGH (direct mode) in the Logic Level or a pulse in the Pulse Transformer Mode (see Figure 2) On Triggering Delay. An R-C network connected between this, the COM and the VREF pins, definethe tDELAY time interval (see fig 4) Select the direct/inverted mode in the Logic Level Mode. It’s also the reference pin in Pulse transformer mode. VON level programming. This pin is used to set the VON monitor level. The programming is achieved setting an appropriate voltage on this pin (i.e. using a resistive divider). On State Monitor. This pin is used to monitor the turning on of the external power device. Negative supply voltage (referred to the COM). This pin is the source of the low side driver DMOS. Ground Output of the low side driver (drain of the DMOS). 5 6 7 8 9 INV-OUT ALARM MON_DELAY VREF INPUT 10 11 12 DELAY SELECT ON_LEV_PROG 13 14 15 16 ON_SENSE VSS COM OUT2 3/11 L6353 DC ELECTRICAL CHARACTERISTICS (VPOS = VCC=15V; VSS = -5 to 0V; Tj = -25 to +125°C; unless otherwise specified) Symbol Vdrop VCC VCCth1 VCCth2 VCChys ICCq Vd Iso Isi Vdrop_sig Vref R in Vdth R ins Iouts VSS R ON Vil Vih Iin tinh Vton Vtoff Vsl Vsh Isl Vsel 11 14 16 9 13 5, 6 8 7, 10 4, 12 Pin 1 2 Parameter VPOS - VOUT1 Operating Supply Voltage Under Voltage Upper Threshold Under Voltage Lower Threshold Under Voltage Hysteresis Quiescent Supply Current Output Voltage Sourced Current Sinked Current Low State Output Voltage Drop Output of Internal Voltage Reference Comparator Input Resistance Comparator Threshold Input Resistance Output Current Operating Negative Bias Voltage On Resistance Low Level Voltage High Level Voltage Input Current Inhibited Parasitic Pulse Duration Turn-on Threshold Voltage Turn-off Threshold Voltage Low Level Voltage High Level Voltage Current Output of SELECT Pin Output Voltage of SELECT Pin pin grounded (referred to COM) OUT2 to VSS); IOUT2 = 2A (Logic Level Mode) (Logic Level Mode) 0
L6353D
物料型号: - L6353(DIP封装) - L6353D(SO封装)

器件简介: L6353是一款智能驱动器,集成了驱动和保护功能。它支持逻辑电平触发或光耦合器/脉冲变压器信号触发,可驱动任何MOS或IGBT。

引脚分配: - OUT1:高侧驱动输出(功率NPN晶体管的发射极)。 - Vcc:正供电电压(参考COM引脚)。 - VPos:正偏置电压(NPN功率晶体管的集电极)。 - CLAMP_PROG:栅极电压编程的第一步。 - INV-OUT:反转输出驱动状态。 - ALARM:诊断输出信号。 - MON_DELAY:Von监测延迟。 - VREF:5V/10mA内部电压参考的输出。 - INPUT:输入信号。 - DELAY:触发延迟。 - SELECT:选择逻辑电平模式的直接/反相模式。 - ON_LEV_PROG:Von电平编程。 - ON_SENSE:监测外部功率器件的导通状态。 - Vss:负供电电压(参考COM引脚)。 - COM:地。 - OUT2:低侧驱动输出(DMOS的漏极)。

参数特性: - 供电电压范围:12.5V至18V。 - 负偏置电压范围:0至-7.5V。 - 峰值高输出电流能力:+8A。 - 过电流和欠饱和保护。 - 锁up保护(针对IGBT)。 - 两步触发(可编程)。 - 防止正供电欠压输入。 - 与光耦合器或脉冲变压器兼容。 - 可编程触发延迟。 - 热保护,内置过温报警和关闭程序。

功能详解: L6353监控被驱动功率器件的导通电压降,保护其免受过载和短路。导通电压降水平可从5V至15V外部编程。过载或过热会在报警输出上显示。如果温度持续升高,功率输出将关闭并保持关闭状态,直到温度下降至低于低温阈值。

应用信息: L6353可用于需要驱动和保护MOS或IGBT的应用场合,如电机驱动、电源管理等。

封装信息: - DIP16和SO16封装。 - 热阻(DIP16:最大80°C/W,SO16:最大90°C/W)。
L6353D 价格&库存

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