L6360
Datasheet
IO-Link communication master transceiver IC
Features
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Supply voltage from 18 V to 32.5 V
Programmable output stages: high-side, low-side or push-pull (< 2 Ω)
Up to 500 mA L+ protected high-side driver
COM1, COM2 and COM3 mode supported
Additional IEC61131-2 type 1 input
Short-circuit and overcurrent output protection through current limitation and
programmable cut-off current
3.3 V / 5 V, 50 mA linear regulator
5 mA IO-Link digital input
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Fast mode I2C for IC control, configuration and diagnostic
Diagnostic dual LED sequence generator and driver
5 V and 3.3 V compatible I/Os
Overvoltage protection (> 36 V)
Overtemperature protection
ESD protection
Miniaturized VFQFPN 26L (3.5x5x1 mm) package
Applications
Product status link
L6360
Product summary
Order code
L6360TR
Package
VFQFPN 26L
(3.5x5x1 mm)
Packing
Tape and reel
Product label
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Industrial sensors
Factory automation
Process control
Description
The L6360 is a monolithic IO-Link master port compliant with PHY2 (3-wire)
supporting COM1 (4.8 kbaud), COM2 (38.4 kbaud) and COM3 (230.4 kbaud) modes.
The C/QO output stage is programmable: high-side, low-side or push-pull; also
cut-off current, cut-off current delay time, and restart delay are programmable.
Cut-off current and cut-off current delay time, combined with thermal shutdown
and automatic restart, protect the device against overload and short-circuit. C/QO
and L+ output stages are able to drive resistive, inductive and capacitive loads.
Inductive loads up to 10 mJ can be driven. Supply voltage is monitored and low
voltage conditions are detected. The L6360 transfers, through the PHY2(C/QO pin),
data received from a host microcontroller through the USART (IN C/QO pin), or
to the USART (OUT C/QI pin) data received from PHY2 (C/QI pin). To enable full
IC control, configuration and monitoring (i.e. fault conditions stored in the status
register), the communication between the system microcontroller and the L6360 is
based on a fast mode 2-wire I2C. The L6360 has nine registers to manage the
programmable parameters and the status of the IC. Monitored fault conditions are: L+
line, overtemperature, C/Q overload, linear regulator undervoltage, and parity check.
Internal LED driver circuitries, in open drain configuration, provide two programmable
sequences to drive two LEDs.
DS8900 - Rev 8 - July 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
L6360
Block diagram
1
Block diagram
Figure 1. Block diagram
V DD
VH
SEL
LINEAR REGULATOR
EN L+
Rbias
VCC
BIAS
EN C/Q
IN C/Q
L+
DIGITAL
INTERFACE
OUTC/Q
Config.
digital
filter
OUTI/Q
C/Q I
SDA
SCL
2
I C
INTERFACE
C/Q O
SA0
SA1
L-
SA2
Config.
digital
filter
LED1
LEDs
LED2
I/Q
UNDERVOLTAGE
CONTROL
IRQ
Overtemperature
CONFIGURATION / CONTROL / DIAGNOSTIC
RST
DS8900 - Rev 8
Protection
page 2/61
L6360
Pin configuration
2
Pin configuration
Figure 2. Pin connection (top through view)
C/QO C/QI
26
25
I/Q
L+
VCC
24
23
22
VCC
1
21
L-
L-
2
20
LED2
VH
3
19
LED1
VDD
4
18
SA0
SA1
5
17
RST
SA2
6
16
SDA
Rbias
7
15
SCL
SEL
8
14
IRQ
EP
9
10
11
12
13
ENC/Q INC/Q OUTC/Q OUTI/Q ENL +
Table 1. Pin description
Number
DS8900 - Rev 8
Name
Function
Type
1, 22
VCC
IC power supply
Supply
2, 21
L-
L- line (IC ground)
Supply
3
VH
Linear regulator supply voltage
Supply
4
VDD
Linear regulator output voltage
Output
5
SA1
Serial address 1
Input
6
SA2
Serial address 2
Input
7
Rbias
External resistor for internal reference generation
Input
8
SEL
Linear regulator 3.3 V/5 V voltage selection. Output is 5 V
when SEL pin is pulled to GND
Input
9
ENC/Q
C/Q output enable
Input
10
INC/Q
C/Q channel logic input
Input
11
OUTC/Q
C/Q channel logic output
Output
12
OUTI/Q
I/Q channel logic output
Output
13
ENL+
L+ switch enable. When ENL+ is high the switch is closed
Input
14
IRQ
Interrupt request signal (open drain)
Output
15
SCL
Serial clock line
Input
16
SDA
Serial data line
Input/output
17
RST
Reset - active low
Input
18
SA0
Serial address 0
Input
19
LED1
Status/diagnostic LED (open drain)
Output
20
LED2
Status/diagnostic LED (open drain)
Output
page 3/61
L6360
Pin configuration
Number
DS8900 - Rev 8
Name
Function
Type
23
L+
L+ line
Supply
24
I/Q
I/Q channel line
Input
25
C/QI
Transceiver (C/Q channel) line
Input
26
C/QO
Transceiver (C/Q channel) line
Output
EP
Exposed Pad
Connect to IC ground on the application board
-
page 4/61
L6360
Absolute maximum ratings
3
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
Supply voltage
VCLAMP
VSEL
Linear regulator selection pin voltage
-0.3 to 4
VDD
Linear regulator output voltage
5.5
VH
Linear regulator input voltage
VCC
VSDA, VSCL, VSA0,
VSA1, VSA2
I2C voltage
-0.3 to VDD + 0.3
VLED1,2
LED1,2 voltage
-0.3 to VDD + 0.3
VC/QI, VI/Q
C/QI, I/Q voltage
-0.3 to VCC + 0.3
VRST
Reset voltage
-0.3 to VDD + 0.3
VIRQ
IRQ voltage
-0.3 to VDD + 0.3
VRbias
External precision resistance voltage
-03 to 4
VESD
Electrostatic discharge (human body model)
2000
ICLAMP
Current through VCLAMP in surge test (1 kV, 500 Ω)
condition
2
A
IC/QO, IL+
C/QO, L+ current (continuous)
Internally limited
A
IOUTC/Q, IOUTI/Q
OUTC/Q, OUTI/Q output current
±5
mA
ISDA
I2C transmission data current (open drain pin)
10
mA
IRQ
Interrupt request signal current
2(1)
A
ILED1,2
LED1, 2 current
10
mA
Eload
L+ demagnetization energy
10
mJ
PTOT
Power dissipation at TC = 25 °C
Internally limited
W
PLR
Linear regulator power dissipation
200
mW
TJ
Junction operating temperature
Internally limited
TSTG
Storage temperature range
-55 to 150
V
°C
1. Peak value during fast transient test only.
DS8900 - Rev 8
page 5/61
L6360
Recommended operating conditions
4
Recommended operating conditions
Table 3. Recommended operating conditions
Symbol
Parameter
Min.
VCC
Supply voltage
VH
Linear regulator input voltage
fSCL
SCL clock frequency
Rbias
Precision resistance
-0.1%
TJ
Junction temperature
-40
Typ.
Max.
Unit
18
32.5
V
7
VCC
V
400
kHz
0.1%
kΩ
125
°C
124
Table 4. Thermal data
Symbol
Parameter
Typ.
Unit
Rthj-case
Thermal resistance, junction-to-case
6
°C/W
Rthj-amb
Thermal resistance, junction-to-ambient(1)
50
°C/W
1. Mounted on FR4 PCB with 2 signal Cu layers and 2 power Cu layers interconnected through vias.
DS8900 - Rev 8
page 6/61
L6360
Electrical characteristics
5
Electrical characteristics
(18 V < VCC < 30 V; -40 °C < TJ < 125 °C; VDD = 5 V; unless otherwise specified).
Table 5. Supply
Symbol
VCLAMP
Voltage clamp
Test conditions
Min.
I = 5 mA
36
Typ.
Max. Unit
V
VUV
Undervoltage on threshold
16
17
VUVH
Undervoltage hysteresis
0.3
1
18
V
V
VREGLN5H
Linear regulator undervoltage high threshold
SEL = L
4.3
4.7
VREGLN5L
Linear regulator undervoltage low threshold
SEL = L
3.6
4.2
VREG5HYS
Linear regulator undervoltage hysteresis
SEL = L
0.1
VREGLN33H Linear regulator undervoltage high threshold
SEL = H
2.8
3.1
VREGLN33L Linear regulator undervoltage low threshold
SEL = H
2.5
2.7
VREG33HYS Linear regulator undervoltage hysteresis
SEL = H
0.1
V
V
V
VQTHH
C/QI and I/Q upper voltage threshold
10.5
12.9
V
VQTHL
C/QI and I/Q lower voltage threshold
8
11.4
V
VQHY
C/Q and I/Q hysteresis voltage
1
Vdemag
I = 5 mA
VfHS
C/Q high-side freewheeling diode forward voltage
I = 10 mA
0.5
V
VfLS
C/Q low-side freewheeling diode forward voltage
I = 10 mA
0.5
V
VLTHY
VLTHON
IS
IOFFCQ
ICOQ
L+ line diagnostic lower threshold
-8.5
V
L+ demagnetization voltage
VLTHOFF
DS8900 - Rev 8
Parameter
-6.5
9
10
L+ line diagnostic hysteresis
0.1
1
L+ line diagnostic upper threshold
10
11
Supply current
OFF-state C/QO current
C/QO low- and high-side cut-off current
mA
ENC/Q = 0, VC/Q = 0 V
Programmable
1
115
190
150
220
300
290
350
440
430
580
720
480
ILIML
L+ limitation current
ENL+ = 0, VL+ = 0 V
Programmable
IOUT = 0.2 A at TJ = 25 °C
μA
70
L+ cut-off current
L+ high-side ON-state resistance
V
4
ICOL
RONL
12
ON-state VCC at 32.5 V
L+ OFF-state current
I/Q pull-down current
V
μA
IOFFL
IINI/Q
V
100
C/QO low- and high-side limitation current
C/QI pull-down current
11
V
OFF-state
ILIMQ
IINC/Qi
-4.8
mA
500
1600
mA
0
200
μA
730
mA
500
1600
mA
5
6.5
mA
2
3.3
mA
2
3
mA
580
1
Ω
page 7/61
L6360
Electrical characteristics
Symbol
RONL
Parameter
L+ high-side ON-state resistance
RONCQH
C/QO high-side ON-state resistance
RONCQL
C/QO low-side ON-state resistance
Test conditions
Min.
Typ.
IOUT = 0.2 A at TJ = 125 °C
Max. Unit
2
IOUT = 0.2 A at TJ = 25 °C
Ω
1
IOUT = 0.2 A at TJ = 125 °C
Ω
2
IOUT = 0.2 A at TJ = 25 °C
Ω
0.6
IOUT = 0.2 A at TJ = 125 °C
Ω
1.2
Ω
Push-pull (CQO rising edge)
140
ns
Push-pull (CQO falling edge)
160
ns
Push-pull (CQO rising edge)
110
ns
Push-pull (CQO falling edge)
225
ns
tdINC/Q
INC/Q to C/QO propagation delay time
tENC/Q
ENC/Q to C/QO propagation delay time
trPP
C/Q rise time in push-pull configuration
10% to 90%
250
860
ns
tfPP
C/Q fall time in push-pull configuration
10% to 90%
290
860
ns
trHS
C/Q rise time in high-side configuration
410
ns
tfHS
C/Q fall time in high-side configuration
700
ns
trLS
C/Q rise time in low-side configuration
750
ns
tfLS
C/Q fall time in low-side configuration
530
ns
tENL
ENL to L+ propagation delay time
1
μs
trL+
L+ rise time
3
μs
tfL+
L+ fall time
25
μs
C/QI to OUTC/Q (falling) propagation delay time
40
ns
C/QI to OUTC/Q (rising) propagation delay time
100
ns
I/Q to OUTI/Q (falling) propagation delay time
40
ns
I/Q to OUTI/Q (rising) propagation delay time
100
ns
100
μs
150
μs
200
μs
250
μs
tdC/Qi
tdI/Q
tdcoq
trcoq
C/QO low- and high-side cut-off current delay time
C/QO restart delay time
Programmable
Programmable
255 × tdcoq
Latched
μs
0
tdbq
C/QI debounce time
Programmable
5
20
μs
100
0
tdbl
I/Q debounce time
Programmable
5
20
μs
100
DS8900 - Rev 8
tdcol
L+ cut-off current delay time
Programmable
trcol
L+ restart delay time
Programmable
500
0
64
μs
ms
page 8/61
L6360
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
trcol
L+ restart delay time
TJSD
Junction temperature shutdown
150
°C
TJHYST
Junction temperature thermal hysteresis
20
°C
TJRST
Junction temperature restart threshold
130
°C
Programmable
Latched
1. Unlatch through I2C communication.
Table 6. Electrical characteristics - linear regulator
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VDD
Linear regulator
output voltage
SEL = L
4.84
5
5.13
V
SEL = H
3.22
3.3
3.37
V
ILIMR
Linear regulator
output current
limitation
65
mA
Table 7. Electrical characteristics - logic inputs and outputs
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VIL
Input low-level
voltage
0.8
V
VIH
Input high-level
voltage
VIHIS
Input hysteresis
voltage
IIN
Input current
VIN = 5 V
1
μA
VOL
Output low-level
voltage
IOUT = -2 mA
0.5
V
VOH
Output highlevel voltage
IOUT = 2 mA
VLIRQ
Open drain
output low-level
voltage
IOUT = 2 mA
2.2
V
0.2
V
VDD - 0.5 V
V
0.5
V
Max.
Unit
0.5
V
Table 8. Electrical characteristics - LED driving
Symbol
Parameter
Test conditions
VLED1,2
Open drain
output low-level
voltage
ILED = 2 mA
ILED
LED1, 2
leakage current
VLED1 = VLED2
=5V
Min.
Typ.
3
nA
Table 9. Electrical characteristics - I2C (fast mode)
DS8900 - Rev 8
Symbol
Parameter
VIL(SDA)
SDA high level
input voltage
Test conditions
Min.
Max.
Unit
0.3
V
page 9/61
L6360
Electrical characteristics
Note:
Symbol
Parameter
VIH(SDA)
SDA high level
input voltage
VIL(SCL)
SCL low level input
voltage
VIH(SCL)
SCL high level
input voltage
IIN
I2C SDA, SCL
input current
tr(SDA)
Test conditions
Min.
Max.
0.7 x VDD
V
0.3
0.7 x VDD
(0.1 x VDD)