L6385ED

L6385E High voltage high and low-side driver Datasheet - production data Description DIP-8 SO-8 Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 50/30 nsec rise/fall with 1 nF load  CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down  Undervoltage lockout on lower and upper driving section  Internal bootstrap diode  Outputs in phase with inputs The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical halfbridge configurations. The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution. The L6385E features the UVLO protection on both lower and upper driving sections (VCC and VBOOT), ensuring greater protection against voltage drops on the supply lines. The device is available in a DIP-8 tube and SO-8 tube, and tape and reel packaging options. Applications  Home appliances  Induction heating  HVAC  Motor drivers – SR motors – DC, AC, PMDC and PMAC motors  Asymmetrical half-bridge topologies  Industrial applications and drives  Lighting applications  Factory automation  Power supply systems September 2015 This is information on a product in full production. DocID13863 Rev 4 1/17 www.st.com Contents L6385E Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 4.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.3 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.1 DIP-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.2 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 DocID13863 Rev 4 L6385E Block diagram 1 Block diagram Figure 1. Block diagram #005453"1
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-0"%  -7(  (/% %*/# DocID13863 Rev 4 3/17 17 Electrical data L6385E 2 Electrical data 2.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Unit VOUT Output voltage -3 to VBOOT -18 V VCC Supply voltage - 0.3 to +18 V -1 to 618 V VBOOT Floating supply voltage Vhvg High-side gate output voltage -1 to VBOOT V Vlvg Low-side gate output voltage -0.3 to VCC +0.3 V Logic input voltage -0.3 to VCC +0.3 V 50 V/ns Total power dissipation (TJ = 85 °C) 750 mW Tj Junction temperature 150 °C Ts Storage temperature -50 to 150 °C ESD Human body model 2 kV Vi dVOUT/dt Allowed output slew rate Ptot 2.2 Value Thermal data Table 2. Thermal data Symbol Rth(JA) 2.3 Parameter Thermal resistance junction to ambient SO-8 DIP-8 Unit 150 100 °C/W Recommended operating conditions Table 3. Recommended operating conditions Symbol Pin Parameter Test condition Min. VOUT 6 Output voltage (1) VBS(2) 8 Floating supply voltage (1) Switching frequency fsw VCC TJ 3 HVG, LVG load CL = 1 nF Supply voltage Junction temperature -45 1. If the condition VBOOT - VOUT < 18 V is guaranteed, VOUT can range from -3 to 580 V. 2. VBS = VBOOT - VOUT. 4/17 DocID13863 Rev 4 Typ. Max. Unit 580 V 17 V 400 kHz 17 V 125 °C L6385E 3 Pin connection Pin connection Figure 2. Pin connection (top view) -*/   7#005 )*/   )7( 7$$   065 (/%   -7( %*/" Table 4. Pin description No. Pin Type Function 1 LIN I Low-side driver logic input 2 HIN I High-side driver logic input 3 VCC P Low voltage power supply 4 GND P Ground 5 LVG(1) O Low-side driver output 6 OUT P High-side driver floating reference 7 HVG(1) O High-side driver output 8 VBOOT P Bootstrap supply voltage 1. The circuit guarantees 0.3 V maximum on the pin (at Isink = 10 mA). This allows to omit the “bleeder” resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low. DocID13863 Rev 4 5/17 17 Electrical characteristics L6385E 4 Electrical characteristics 4.1 AC operation Table 5. AC operation electrical characteristics (VCC = 15 V; TJ = 25 °C) Symbol Pin Parameter Test condition Min. Typ. Max. Unit ton 1 vs. 5 High/low-side driver turn-on 2 vs. 7 propagation delay VOUT = 0 V 110 ns toff 1 vs. 5 High/low-side driver turn-off 2 vs. 7 propagation delay VOUT = 0 V 105 ns tr 5, 7 Rise time CL = 1000 pF 50 ns tf 5, 7 Fall time CL = 1000 pF 30 ns 4.2 DC operation Table 6. DC operation electrical characteristics (VCC = 15 V; TJ = 25 °C) Symbol Pin Parameter Test condition Min. Typ. Max. Unit 17 V Low supply voltage section VCC Supply voltage VCCth1 VCC UV turn-on threshold 9.1 9.6 10.1 V VCCth2 VCC UV turn-off threshold 7.9 8.3 8.8 V VCChys 3 VCC UV hysteresis 1.3 V IQCCU Undervoltage quiescent supply current VCC  9 V 150 220 A IQCC Quiescent current VIN = 15 V 250 320 A Rdson Bootstrap driver on resistance(1) VCC  12.5 V 125  Bootstrapped supply voltage section VBS Bootstrap supply voltage VBSth1 VBS UV turn-on threshold 8.5 VBS UV turn-off threshold 7.2 VBSth2 VBShys 8 VBS UV hysteresis High voltage leakage current ILK V 9.5 10.5 V 8.2 9.2 V 1.3 VBS quiescent current IQBS 17 V HVG ON 200 A Vhvg = VOUT = VBOOT = 600 V 10 A High/low-side driver Iso Isi 6/17 5, 7 Source short-circuit current VIN = Vih (tp < 10 s) 300 400 mA Sink short-circuit current VIN = Vil (tp < 10 s) 450 650 mA DocID13863 Rev 4 L6385E Electrical characteristics Table 6. DC operation electrical characteristics (VCC = 15 V; TJ = 25 °C) (continued) Symbol Pin Parameter Test condition Min. Typ. Max. Unit 1.5 V Logic inputs Vil 1, 2 High level logic threshold voltage Vih Iih Iil Low level logic threshold voltage 1, 2 3.6 High level logic input current VIN = 15 V Low level logic input current VIN = 0 V V 50 70 A 1 A 1. RDS(on) is tested in the following way:  V CC – V BOOT1  –  V CC – V BOOT2  R DSON = ----------------------------------------------------------------------------------------------I 1  V CC ,V BOOT1  – I 2  V CC ,V BOOT2  where I1 is pin 8 current when VBOOT = VBOOT1, I2 when VBOOT = VBOOT2. 4.3 Timing diagram Figure 3. Input/output timing diagram HIN HVG LIN LVG D99IN1053 DocID13863 Rev 4 7/17 17 Bootstrap driver 5 L6385E Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6385E device a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The diode connected in series to the DMOS has been added to avoid undesirable turn-on. CBOOT selection and charging To choose the proper CBOOT value, the external MOSFET can be seen as an equivalent capacitor. This capacitor CEXT is related to the MOSFET total gate charge: Equation 1 Q gate C EXT = --------------V gate The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss. It has to be: CBOOT>>>CEXT E.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300 mV. If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses. E.g.: HVG steady state consumption is lower than 200 A, so if HVG TON is 5 ms, CBOOT has to supply a maximum of 1 µC to CEXT. This charge on a 1mF capacitor means a voltage drop of 1 V. The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has a great leakage current). This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125 ). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account. The following equation is useful to compute the drop on the bootstrap DMOS: Equation 2 Q gate V drop = I ch arg e R dson  V drop = -------------------R dson T ch arg e where Qgate is the gate charge of the external power MOSFET, Rdson is the on resistance of the bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor. 8/17 DocID13863 Rev 4 L6385E Bootstrap driver For example: using a power MOSFET with a total gate charge of 30 nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 ms. In fact: Equation 3 30nC V drop = ---------------  125  0.8V 5s Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 4. Bootstrap driver DBOOT VS VBOOT VBOOT VS H.V. H.V. HVG HVG CBOOT VOUT CBOOT VOUT TO LOAD TO LOAD LVG LVG a b DocID13863 Rev 4 D99IN1056 9/17 17 Typical characteristic 6 L6385E Typical characteristic Figure 5. Typical rise and fall times vs. load capacitance time (nsec) D99IN1054 250 Figure 6. Quiescent current vs. supply voltage Iq (μA) 104 D99IN1055 200 Tr 103 150 Tf 100 102 50 0 10 0 1 2 3 4 5 C (nF) For both high and low side buffers @25˚C Tamb Figure 7. Turn-on time vs. temperature 8 10 12 14 16 VS(V) @ Vcc = 15V 200 150 Typ. 100 150 Toff (ns) Ton (ns) 6 250 @ Vcc = 15V 200 100 50 Typ. 50 0 -45 -25 0 25 50 Tj (°C) 75 100 0 125 Figure 9. VBOOT UV turn-on threshold vs. temperature -45 -25 0 25 50 Tj (°C) 75 100 125 Figure 10. VCC UV turn-off threshold vs. temperature 11 13 @ Vcc = 15V 12 10 11 Typ. Vccth2(V) Vbth1 (V) 4 Figure 8. Turn-off time vs. temperature 250 10 2 0 9 8 7 9 Typ. 8 7 6 6 5 -45 10/17 -25 0 25 50 Tj (°C) 75 100 125 DocID13863 Rev 4 -45 -25 0 25 50 Tj (°C) 75 100 125 L6385E Typical characteristic Figure 11. VBOOT UV turn-off threshold vs. temperature Figure 12. Output source current vs. temperature 1000 14 @ Vcc = 15V @ Vcc = 15V 13 800 current (mA) Vbth2 (V) 12 11 10 9 8 7 0 -45 -25 0 25 50 75 100 -45 125 Figure 13. VCC UV turn-on threshold vs. temperature -25 0 25 50 Tj (°C) 75 100 125 Figure 14. Output sink current vs. temperature 13 1000 @ Vcc = 15V 12 800 11 current (mA) Vccth1(V) Typ. 400 200 Typ. 6 10 9 600 Typ. 600 Typ. 400 200 8 0 7 -45 -25 0 25 50 Tj (°C) 75 100 125 DocID13863 Rev 4 -45 -25 0 25 50 Tj (°C) 75 100 125 11/17 17 Package information 7 L6385E Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 7.1 DIP-8 package information Figure 15. DIP-8 package outline 12/17 DocID13863 Rev 4 L6385E Package information Table 7. DIP-8 package mechanical data Dimensions (mm) Dimensions (inch) Symbol Min. A Typ. Max. Min. 3.32 Typ. Max. 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D E 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L Z 3.18 3.81 1.52 DocID13863 Rev 4 0.125 0.150 0.060 13/17 17 Package information 7.2 L6385E SO-8 package information Figure 16. SO-8 package outline $09 14/17 DocID13863 Rev 4 L6385E Package information Table 8. SO-8 package mechanical data Dimensions (mm) Dimensions (inch) Symbol Min. Typ. A Max. Min. Typ. 1.750 0.0689 A1 0.100 A2 1.250 b 0.280 0.480 0.0110 0.0189 c 0.170 0.230 0.0067 0.0091 (1) 4.800 4.900 5.000 0.1890 0.1929 0.1969 E 5.800 6.000 6.200 0.2283 0.2362 0.2441 E1(2) 3.800 3.900 4.000 0.1496 0.1535 0.1575 D e 0.250 Max. 0.0039 0.0098 0.0492 1.270 0.0500 h 0.250 0.500 0.0098 0.0197 L 0.400 1.270 0.0157 0.0500 L1 k ccc 1.040 0° 0.0409 8° 0.10 0° 8° 0.0039 1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides). 2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side. DocID13863 Rev 4 15/17 17 Order codes 8 L6385E Order codes Table 9. Order codes 9 Order code Package Packaging L6385E DIP-8 Tube L6385ED SO-8 Tube L6385ED013TR SO-8 Tape and reel Revision history Table 10. Document revision history Date Revision 02-Oct-2007 1 First release 19-Jun-2014 2 Added Section : Applications on page 1. Updated Section : Description on page 1 (replaced by new description). Updated Table 1: Device summary on page 1 (moved from page 15 to page 1, renamed title of Table 1). Updated Figure 1: Block diagram on page 3 (moved from page 1 to page 3, added Section 1: Block diagram on page 3). Updated Section 2.1: Absolute maximum ratings on page 4 (removed note below Table 2: Absolute maximum ratings). Updated Table 5: Pin description on page 5 (updated “Pin” and “Type”). Updated Section : CBOOT selection and charging on page 8 (updated values of “E.g.: HVG”). Numbered Equation 1 on page 8, Equation 2 on page 8 and Equation 3 on page 9. Updated Section 7: Package information on page 12 [updated/added titles, reversed order of Figure 15 and Table 8, Figure 16 and Table 9 (numbered tables), removed 3D package figures, minor modifications]. Minor modifications throughout document. 01-Dec-2014 3 Updated Section : Description on page 1. Updated Table 6 on page 6 (corrected typo in units of “Iso” and “Isi” parameters). 4 Updated Table 1 on page 4 (added ESD parameter and value). Updated note 1. below Table 6 on page 6 (replaced VCBOOTx by VBOOTx). Moved Table 9 on page 16 (moved from page 1 to page 16, added/updated titles). Minor modifications throughout document. 23-Sep-2015 16/17 Changes DocID13863 Rev 4 L6385E IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID13863 Rev 4 17/17 17