L6387E
High voltage high and low-side driver
Datasheet - production data
Description
DIP-8
The L6387E is a simple and compact high voltage
gate driver, manufactured with the BCD™ “offline”
technology, and able to drive a half-bridge of
power MOSFET or IGBT devices. The high-side
(floating) section is enabled to work with voltage
rail up to 600 V. Both device outputs can
independently sink and source 650 mA and
400 mA respectively and cannot be
simultaneously driven high thanks to an
integrated interlocking function.
SO-8
Features
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature
range
Driver current capability
– 400 mA source
– 650 mA sink
Switching times 50/30 nsec rise/fall with 1 nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull-down
The L6387E device provides two input pins and
two output pins and guarantees the outputs toggle
in phase with inputs. The logic inputs are
CMOS/TTL compatible to ease the interfacing
with controlling devices.
The L6387E features the UVLO protection on the
VCC supply voltage and integrates the bootstrap
diode, allowing a more compact and reliable
solution.
The device is available in a DIP-8 tube and SO-8
tube and tape and reel packaging options.
Internal bootstrap diode
Outputs in phase with inputs
Interlocking function
Applications
Home appliances
Motor drivers
– DC, AC, PMDC and PMAC motors
Lighting applications
Industrial applications and drives
Induction heating
HVAC
Factory automation
Power supply systems
October 2015
This is information on a product in full production.
DocID13990 Rev 4
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www.st.com
Contents
L6387E
Contents
1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1
AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2
DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Input logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6
Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7
Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.1
DIP-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.2
SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
9
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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L6387E
Block diagram
1
Block diagram
Figure 1. Block diagram
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Electrical data
L6387E
2
Electrical data
2.1
Absolute maximum ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Unit
VOUT
Output voltage
-3 to VBOOT -18
V
VCC
Supply voltage
- 0.3 to +18
V
-1 to 618
V
VBOOT
Floating supply voltage
Vhvg
High-side gate output voltage
-1 to VBOOT
V
Vlvg
Low-side gate output voltage
-0.3 to VCC +0.3
V
Logic input voltage
-0.3 to VCC +0.3
V
50
V/ns
Total power dissipation (TJ = 85 °C)
750
mW
Tj
Junction temperature
150
°C
Ts
Storage temperature
-50 to 150
°C
ESD
Human body model
2
kV
Vi
dVOUT/dt Allowed output slew rate
Ptot
2.2
Value
Thermal data
Table 2. Thermal data
Symbol
Rth(JA)
2.3
Parameter
Thermal resistance junction to ambient
SO-8
DIP-8
Unit
150
100
°C/W
Recommended operating conditions
Table 3. Recommended operating conditions
Symbol
Pin
Parameter
Test condition
Min.
VOUT
6
Output voltage
(1)
VBS(2)
8
Floating supply voltage
(1)
Switching frequency
fsw
VCC
TJ
3
HVG, LVG load CL = 1 nF
Supply voltage
Junction temperature
-45
1. If the condition VBOOT - VOUT < 18 V is guaranteed, VOUT can range from -3 to 580 V.
2. VBS = VBOOT - VOUT.
4/17
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Typ.
Max.
Unit
580
V
17
V
400
kHz
17
V
125
°C
L6387E
3
Pin connection
Pin connection
Figure 2. Pin connection (top view)
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Table 4. Pin description
No.
Pin
Type
Function
1
LIN
I
Low-side driver logic input
2
HIN
I
High-side driver logic input
3
VCC
P
Low voltage power supply
4
GND
P
Ground
5
LVG(1)
O
Low-side driver output
6
OUT
P
High-side driver floating reference
7
HVG(1)
O
High-side driver output
8
VBOOT
P
Bootstrap supply voltage
1. The circuit guarantees 0.3 V maximum on the pin (at Isink = 10 mA). This allows to omit the “bleeder”
resistor connected between the gate and the source of the external MOSFET normally used to hold the pin
low.
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Electrical characteristics
L6387E
4
Electrical characteristics
4.1
AC operation
Table 5. AC operation electrical characteristics (VCC = 15 V; TJ = 25 °C)
Symbol
Pin
Parameter
Test condition
ton
1 vs. 5
2 vs. 7
High/low-side driver turn-on propagation
delay
VOUT = 0 V
110
ns
toff
1 vs. 5
2 vs. 7
High/low-side driver turn-off propagation
delay
VOUT = 0 V
105
ns
tr
5, 7
Rise time
CL = 1000 pF
50
ns
tf
5, 7
Fall time
CL = 1000 pF
30
ns
4.2
Min.
Typ.
Max.
Unit
DC operation
Table 6. DC operation electrical characteristics (VCC = 15 V; TJ = 25 °C)
Symbol
Pin
Parameter
Test condition
Min.
Typ.
Max.
Unit
17
V
Low supply voltage section
VCC
Supply voltage
VCCth1
VCC UV turn-on threshold
5.5
6
6.5
V
VCCth2
VCC UV turn-off threshold
5
5.5
6
V
VCChys
3
VCC UV hysteresis
0.5
V
IQCCU
Undervoltage quiescent supply
current
VCC 5 V
150
220
A
IQCC
Quiescent current
VCC = 15 V
250
320
A
VCC 12.5 V
125
Bootstrap driver on-resistance
Rdson
(1)
Bootstrapped supply voltage section
Bootstrap supply voltage
VBS
IQBS
8
V
HVG ON
100
A
Vhvg = VOUT =
VBOOT = 600 V
10
A
VBS quiescent current
High voltage leakage current
ILK
17
High/low-side driver
Iso
Isi
6/17
5, 7
Source short-circuit current
VIN = Vih (tp < 10 s)
300
400
mA
Sink short-circuit current
VIN = Vil (tp < 10 s)
450
650
mA
DocID13990 Rev 4
L6387E
Electrical characteristics
Table 6. DC operation electrical characteristics (continued) (VCC = 15 V; TJ = 25 °C)
Symbol
Pin
Parameter
Test condition
Min.
Typ.
Max.
Unit
1.5
V
Logic inputs
Vil
Vih
Iih
Iil
Low level logic threshold voltage
1, 2
High level logic threshold voltage
3.6
High level logic input current
VIN = 15 V
Low level logic input current
VIN = 0 V
V
50
70
µA
1
µA
1. RDS(on) is tested in the following way:
V CC – V BOOT1 – V CC – V BOOT2
R DSON = ----------------------------------------------------------------------------------------------I 1 V CC ,V BOOT1 – I 2 V CC ,V BOOT2
where I1 is the pin 8 current when VBOOT = VBOOT1, I2 when VBOOT = VBOOT2.
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Input logic
5
L6387E
Input logic
L6387E input logic is VCC (17 V) compatible. An interlocking feature is offered (seeTable 7)
to avoid undesired simultaneous turn-ON of both power switches driven.
Table 7. Input logic
Input
8/17
Output
HIN
LIN
HVG
LVG
0
0
0
0
0
1
0
1
1
0
1
0
1
1
0
0
DocID13990 Rev 4
L6387E
6
Bootstrap driver
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 3 a). In the L6387E device
a patented integrated structure replaces the external diode. It is realized by a high voltage
DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as
shown in Figure 3 b. An internal charge pump (Figure 3 b) provides the DMOS driving
voltage. The diode connected in series to the DMOS has been added to avoid undesirable
turn-on.
CBOOT selection and charging
To choose the proper CBOOT value, the external MOSFET can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOSFET total gate charge:
Equation 1
Q gate
C EXT = --------------V gate
The ratio between the CEXT and CBOOT capacitors is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT
E.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop would be
300 mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
E.g.: HVG steady state consumption is lower than 100 A, so if HVG TON is 5 ms, CBOOT
has to supply a maximum of 0.5 µC to CEXT. This charge on a 1 F capacitor means
a voltage drop of 0.5 V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has a great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value:
125 ). At low frequency this drop can be neglected. Anyway increasing the frequency it
must be taken into account.
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 2
Q gate
V drop = I ch arg e R dson V drop = -------------------R dson
T ch arg e
where Qgate is the gate charge of the external power MOSFET, Rdson is the on-resistance of
the bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
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Bootstrap driver
L6387E
For example: using a power MOSFET with a total gate charge of 30 nC the drop on the
bootstrap DMOS is about 1 V, if the Tcharge is 5s. In fact:
Equation 3
30nC
V drop = --------------- 125 0.8V
5s
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 3. Bootstrap driver
DBOOT
VS
VBOOT
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
a
VBOOT
VS
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
b
10/17
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D99IN1056
L6387E
Typical characteristic
Figure 4. Typical rise and fall times
vs. load capacitance
time
(nsec)
D99IN1054
250
Figure 5. Quiescent current vs. supply
voltage
Iq
(μA)
104
D99IN1055
200
Tr
103
150
Tf
100
102
50
0
10
0
1
2
3
4
5 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 6. Turn-on time vs. temperature
4
6
8
10
12
14
16 VS(V)
Figure 7. Turn-off time vs. temperature
250
@ Vcc = 15V
@ Vcc = 15V
200
200
150
Toff (ns)
Ton (ns)
2
0
250
Typ.
100
50
150
Typ.
100
50
0
-45
-25
0
25
50
Tj (°C)
75
100
0
125
-45
Figure 8. Output source current
vs. temperature
-25
0
25
50
Tj (°C)
75
100
125
Figure 9. Output sink current
vs. temperature
1000
1000
@ Vcc = 15V
@ Vcc = 15V
800
current (mA)
800
current (mA)
7
Typical characteristic
600
Typ.
400
200
600
Typ.
400
200
0
0
-45
-25
0
25
50
Tj (°C)
75
100 125
DocID13990 Rev 4
-45
-25
0
25
50
Tj (°C)
75
100 125
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Package information
8
L6387E
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
8.1
DIP-8 package information
Figure 10. DIP-8 package outline
$0Y
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L6387E
Package information
Table 8. DIP-8 package mechanical data
Dimensions (mm)
Dimensions (inch)
Symbol
Min.
A
Typ.
Max.
Min.
3.32
Typ.
Max.
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
E
10.92
7.95
9.75
0.430
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
Z
3.18
3.81
1.52
DocID13990 Rev 4
0.125
0.150
0.060
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Package information
8.2
L6387E
SO-8 package information
Figure 11. SO-8 package outline
$0Y
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L6387E
Package information
Table 9. SO-8 package mechanical data
Dimensions (mm)
Dimensions (inch)
Symbol
Min.
Typ.
A
Max.
Min.
Typ.
1.750
0.0689
A1
0.100
A2
1.250
b
0.280
0.480
0.0110
0.0189
c
0.170
0.230
0.0067
0.0091
D(1)
4.800
4.900
5.000
0.1890
0.1929
0.1969
E
5.800
6.000
6.200
0.2283
0.2362
0.2441
E1(2)
3.800
3.900
4.000
0.1496
0.1535
0.1575
e
0.250
Max.
0.0039
0.0098
0.0492
1.270
0.0500
h
0.250
0.500
0.0098
0.0197
L
0.400
1.270
0.0157
0.0500
L1
k
ccc
1.040
0°
0.0409
8°
0.10
0°
8°
0.0039
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both sides).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
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Order codes
9
L6387E
Order codes
Table 10. Order codes
10
Part number
Package
Packaging
L6387E
DIP-8
Tube
L6387ED
SO-8
Tube
L6387ED013TR
SO-8
Tape and reel
Revision history
Table 11.
Date
Revision
11-Oct-2007
1
First release
19-Sep-2008
2
Minor text changes on Table 7
3
Added Section : Applications on page 1.
Updated Section : Description on page 1 (replaced by new
description).
Updated Table 1: Device summary on page 1 (moved from page 15,
updated title).
Updated Figure 1: Block diagram on page 3 (moved from page 1 to
page 3, added title to Section 1: Block diagram on page 3).
Updated Section 2.1: Absolute maximum ratings on page 4
(removed note below Table 2: Absolute maximum ratings).
Updated Table 5: Pin description on page 5 (updated “Pin” and
“Types”).
Added cross-references in Section 5: Input logic on page 8.
Updated Section 6: Bootstrap driver on page 9 (updated values of
“E.g.: HVG”).
Numbered Equation 1 on page 9, Equation 2 on page 9 and
Equation 3 on page 10.
Updated Section 8: Package information on page 12 [updated/added
titles, reversed order of Figure 10 and Table 9, Figure 11 and
Table 10 (numbered tables), removed 3D package figures, minor
modifications].
Minor modifications throughout document.
4
Updated Table 1 on page 4 (added ESD row).
Updated note 1. below Table 6 on page 6 (replaced VCBOOTx by
VBOOTx).
Added Section 9: Order codes on page 16 (moved Table 10 from
page 1, updated title).
Minor modifications throughout document.
19-Jun-2014
20-Oct-2015
16/17
Changes
DocID13990 Rev 4
L6387E
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