L6390

L6390 High-voltage high and low side driver Features ■ ■ ■ High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability: – 290 mA source, – 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Operational amplifier for advanced current sensing Comparator for fault protections Smart shut down function Adjustable dead-time Interlocking function Compact and simplified layout Bill of material reduction Effective fault protection Flexible, easy and fast design SO-16 DIP-16 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Description The L6390 is a high-voltage device manufactured with the BCD "OFF-LINE" technology. It is a monolithic half-bridge gate driver for N-channel Power MOSFET or IGBT. The high side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. The IC embeds an operational amplifier suitable for advanced current sensing in applications such as field oriented motor control. An integrated comparator is available for protections against over-current, over-temperature, etc. Applications Motor driver for home appliances, factory automation, industrial drives. HID ballasts, power supply units. Table 1. Device summary Order codes L6390 L6390D L6390D013TR Package DIP-16 SO-16 SO-16 Packaging Tube Tube Tape and reel July 2008 Rev 3 1/22 www.st.com 22 Contents L6390 Contents 1 2 3 4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 4.2 4.3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 5.2 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 7 8 9 Waveforms definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Smart shut down function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 9.1 CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 11 Package mecanichal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 L6390 Block diagram 1 Block diagram Figure 1. Block diagram BOOTSTRAP DRIVER VCC 4 from LVG UV DETECTION 3 HIN FLOATING STRUCTURE 16 BOOT UV DETECTION HVG DRIVER LEVEL SHIFTER S R 15 HVG 5V LOGIC SHOOT THROUGH PREVENTION 14 OUT VCC LVG DRIVER LVG 11 5V COMPARATOR + + VREF 10 CP+ LIN 1 SD/OD 2 SMART SD SD LATCH GND 8 DT 5 DEAD TIME VCC OPAMP + 6 9 OP+ OP- OPOUT 7 3/22 Pin connection L6390 2 Pin connection Figure 2. Pin connection (top view) LIN SD/OD HIN VCC DT OPOPOUT GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 BOOT HVG OUT NC NC LVG CP+ OP+ Table 2. Pin n # 1 2 3 4 5 6 7 8 9 10 11 12, 13 14 15 16 Pin description Pin name LIN SD/OD (1) HIN VCC DT OPOPOUT GND OP+ CP+ LVG (1) Type I I/O I P I I O P I I O Function Low side driver logic input (active low) Shut down logic input (active low)/open drain (comparator output) High side driver logic input (active high) Lower section supply voltage Dead time setting Opamp inverting input Opamp output Ground Opamp non inverting input Comparator input Low side driver output Not connected NC OUT HVG (1) P O P High side (Floating) common voltage High side driver output Bootstrap supply voltage BOOT 1. The circuit provides less than 1 V on the LVG and HVG pins (@ Isink = 10 mA), with VCC > 3 V. This allows omitting the "bleeder" resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also in SD condition. 4/22 L6390 Truth table 3 Truth table Table 3. Truth table Input SD L H H H H LIN X H L L H HIN X L H L H LVG L L L H L Output HVG L L L L H Note: X: don't care 5/22 Electrical data L6390 4 4.1 Electrical data Absolute maximum ratings Table 4. Symbol Vcc Vout Vboot Vhvg Vlvg Vop+ VopVcp+ Vi Vod dVout/dt Ptot TJ Tstg Supply voltage Output voltage Bootstrap voltage High side gate output voltage Low side gate output voltage OPAMP non-inverting input OPAMP inverting input Comparator input voltage Logic input voltage Open drain voltage Allowed output slew rate Total power dissipation (TA = 25 °C) Junction temperature Storage temperature -50 Absolute maximum rating Value Parameter Min - 0.3 Vboot - 21 - 0.3 Vout - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 Max 21 Vboot + 0.3 620 Vboot + 0.3 Vcc + 0.3 Vcc + 0.3 Vcc + 0.3 Vcc + 0.3 15 15 50 800 150 150 V V V V V V V V V V V/ns mW °C °C Unit 4.2 Thermal data Table 5. Symbol Rth(JA) Thermal data Parameter Thermal resistance junction to ambient SO-16 155 DIP-16 100 Unit °C/W 6/22 L6390 Electrical data 4.3 Recommended operating conditions Table 6. Symbol Vcc VBO (1) Recommended operating conditions Pin 4 16-14 14 Parameter Supply voltage Floating supply voltage DC output voltage Switching frequency Junction temperature HVG, LVG load CL = 1 nF -40 Test condition Min 12.5 12.4 -9 (2) Max 20 20 580 800 125 Unit V V V kHz °C Vout fsw TJ 1. VBO = Vboot - Vout 2. LVG off. Vcc=12.5 V Logic is operational if Vboot > 5 V Refer to AN2378 for more details 7/22 Electrical characteristics L6390 5 5.1 Electrical characteristics AC operation Table 7. Symbol ton toff AC operation electrical characteristics (VCC = 15 V; TJ = +25 °C) Pin Parameter Test condition Min Typ 125 125 Max 200 200 Unit ns ns tsd High/low side driver turn1 vs 11 on propagation delay Vout = 0 V 3 vs 15 High/low side driver turn- Vboot = Vcc CL = 1 nF off propagation delay Vi = 0 to 3.3 V Shut down to high/low 2 vs See Figure 3. side driver propagation 11, 15 delay Comparator triggering to Measured applying a high/low side driver turn- voltage step from 0 V to off propagation delay 3.3 V to pin CP+. Delay matching, HS and LS turn-on/off Rdt = 0, CL = 1 nF, CDT = 100 nF Rdt = 37 kΩ CL = 1 nF, , CDT = 100 nF , Rdt = 136 kΩ CL = 1 nF, CDT = 100 nF , Rdt = 260 kΩ CL = 1 nF, CDT = 100 nF Rdt = 0, CL = 1 nF, CDT = 100 nF , Rdt = 37 kΩ CL = 1 nF, CDT = 100 nF , Rdt = 136 kΩ CL = 1 nF, CDT = 100 nF Rdt = 260 kΩ CL = 1 nF, , CDT = 100 nF 0.1 0.48 1.35 2.6 125 200 ns tisd 200 250 ns MT 40 0.18 0.6 1.6 3.0 0.25 0.72 1.85 3.4 60 100 240 350 75 35 120 70 ns µs µs µs µs ns ns ns ns ns ns dt 5 Dead time setting range MDT Matching dead time tr tf Rise time 11, 15 Fall time CL = 1 n F CL = 1 nF 8/22 L6390 Figure 3. Timing Electrical characteristics LIN 50% 50% tr 90% 90% tf LVG ton 10% 10% toff HIN 50% 50% tr 90% 90% tf HVG ton 10% 10% toff SD 50% 50% tr 90% 10% 90% tf LVG/HVG ton 10% toff 9/22 Electrical characteristics L6390 5.2 Table 8. Symbol DC operation DC operation electrical characteristics (VCC = 15 V; TJ = + 25 °C) Pin Parameter Test condition Min Typ Max Unit Low supply voltage section Vcc_hys Vcc_thON Vcc_thOFF Vcc UV hysteresis Vcc UV turn ON threshold Vcc UV turn OFF threshold Vcc = 10 V SD = 5 V; LIN = 5 V; HIN = GND; RDT = 0 Ω; CP+=OP+=GND; OP-=5 V Vcc = 15 V SD = 5 V; LIN = 5 V; HIN = GND; RDT = 0 Ω; CP+=OP+=GND; OP-=5 V 500 1200 11.5 10 1500 12 10.5 1800 12.5 11 mV V V Iqccu 4 Undervoltage quiescent supply current 120 150 µA Iqcc Quiescent current 720 1000 µA Vref Internal reference voltage (1) 540 580 mV Bootstrapped supply voltage section VBO_hys VBO_thON VBO_thOFF VBO UV hysteresis 1200 10.6 9.1 1500 11.5 10 1800 12.4 10.9 mV V V VBO UV turn ON threshold VBO UV turn OFF threshold VBO = 9 V SD = 5 V; LIN and Undervoltage VBO quiescent HIN = 5 V; current RDT = 0 Ω; CP+=OP+=GND; OP-=5 V VBO = 15 V SD = 5 V; LIN and HIN = 5 V; RDT = 0 Ω; CP+=OP+=GND; OP-=5 V IQBOU 16 70 110 µA IQBO VBO quiescent current 150 210 µA ILK RDS(on) High voltage leakage current Vhvg = Vout = Vboot = 600 V Bootstrap driver on resistance (2) LVG ON 120 10 µA Ω Driving buffers section Iso Isi High/low side source short circuit current High/low side sink short circuit current VIN = Vih (tp> CEXT e.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop would be 300 mV. If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage and quiescent losses. e.g.: HVG steady state consumption is lower than 200 µA, so if HVG TON is 5 ms, CBOOT has to supply 1 µC to CEXT. This charge on a 1 µF capacitor means a voltage drop of 1V. The internal bootstrap driver gives a great advantage: the external fast recovery diode can be avoided (it usually has great leakage current). This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the LVG is on. The charging time (Tcharge) of the CBOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 120 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account. The following equation is useful to compute the drop on the bootstrap DMOS: 17/22 Bootstrap driver Equation 3 L6390 Q gate V drop = I ch arg e R dson →V drop = ------------------ R dson T ch arg e where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Equation 4 30nC V drop = -------------- ⋅ 120 Ω ∼0.7V 5 µs Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 7. Bootstrap driver DBOOT VCC BOOT H.V. HVG OUT TO LOAD LVG VCC BOOT H.V. HVG OUT TO LOAD LVG CBOOT CBOOT a b D99IN1067 18/22 L6390 Package mechanical data 10 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com Figure 8. DIP-16 mechanical data and package dimensions DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 mm TYP. MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 inch TYP. MAX. OUTLINE AND MECHANICAL DATA DIP16 0.050 19/22 Package mechanical data Figure 9. DIM. MIN. A a1 a2 b b1 C c1 D(1) E e e3 F(1) G L M S REF. 0.35 MIN. L6390 SO-16 narrow mechanical data and package dimensions mm TYP. MAX. 1.75 0.1 0.25 0.004 DIMENSIONS mm1.6 TYP. MAX. MIN. 0.46 0.014 1.75 0.2 1.65 0.013 45° 0.46(typ.) inch MIN. TYP. MAX. 0.069 0.009 inch 0.063 TYP. 0.018 MAX. 0.068 0.008 OUTLINE AND MECHANICAL DATA PACKAGE AND PACKING INFORMATION 0.19 a1 a2 b b1 C 0.1 A 0.25 0.5 0.35 0.19 0.5 0.007 0.004 0.010 0.020 0.064 0.018 9.8 10 0.25 0.386 0.007 0.019 0.394 0.244 0.010 16-LEAD SMALL OUTLINE PACKAGE Weight: not available 5.8 c1 D E e 9.8 1.27 5.8 6.2 45° (typ.) 0.228 10 6.2 1.27 8.894.0 3.8 4.6 0.5 0.385 0.050 0.228 0.393 0.244 8.89 0.350 0.050 3.8 e3 F 4.60 G L 0.150 0.350 0.157 0.157 0.208 0.208 0.149 5.30 4.0 0.181 5.3 0.181 0.4 1.27 1.27 0.150 0.019 0.050 0.050 M S 0.620.62 8° (max.) 8 ° (max.) 0.024 0.024 SO-16 SO16 (Narrow) (1) "D" and "F" do not include mold flash or protrusions - Mold flash or protrusions shall not exceed 0.15mm (.006inc.) 0016020 D 20/22 L6390 Revision history 11 Revision history Table 11. Date 29-Feb-2008 09-Jul-2008 17-Jul-2008 Document revision history Revision 1 2 3 First release Updated: Cover page, Table 2 on page 4, Table 3 on page 5, Section 4 on page 6, Section 5 on page 8, Section 9.1 on page 17 Updated test condition values on Table 8 and Table 9 Changes 21/22 L6390 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 22/22