L6590AN

L6590A FULLY INTEGRATED POWER SUPPLY ■ WIDE-RANGE MAINS OPERATION ■ "ON-CHIP" 700V V(BR)DSS POWER MOS ■ 65 kHz INTERNAL OSCILLATOR ■ STANDBY MODE FOR HIGH EFFICIENCY AT LIGHT LOAD ■ OVERCURRENT AND LATCHED OVERVOLTAGE PROTECTION ■ NON DISSIPATIVE BUILT-IN START-UP CIRCUIT ■ THERMAL SHUTDOWN WITH HYSTERESIS ■ BROWNOUT PROTECTION MINIDIP ORDERING NUMBER: L6590AN ■ MAIN APPLICATIONS ■ WALL PLUG POWER SUPPLIES UP TO 15W ■ AC-DC ADAPTERS ■ AUXILIARY POWER SUPPLIES FOR: - CRT AND LCD MONITOR (BLUE ANGEL) - DESKTOP PC/SERVER - FAX, TV, LASER PRINTER ) s ( ct TYPICAL APPLICATION CIRCUIT AC line 88 to 264 Vac LINE CARD, DC-DC CONVERTERS DESCRIPTION e t le o s b O - u d o Pout up to 15W t e l o DRAIN 1 L6590A BOK Vcc 5 3 6, 7, 8 GND October 2000 o r P The L6590A is a monolithic switching regulator designed in BCD OFF-LINE technology, able to operate with wide range input voltage and to deliver up to 15W output power. The internal power switch is a lateral power MOSFET with a typical RDS(on) of 13Ω and a V(BR)DSS of 700V minimum. r P e s b O c u d - HOME APPLIANCES/LIGHTING ) s t( 4 COMP 1/19 L6590A efficiency (Pin < 1W @ Pout = 0.5W with wide range mains). DESCRIPTION (continued) The MOSFET is source-grounded, thus it is possible to build flyback, boost and forward converters. Internal protections like cycle-by-cycle current limiting, latched output overvoltage protection, mains undervoltage protection and thermal shutdown generate a 'robust' design solution. The device is meant to work with secondary feedback for tight tolerance of the regulated output voltage. The IC uses a special leadframe with the ground pins (6, 7 and 8) internally connected in order for heat to be easily removed from the silicon die. An heatsink can then be realized by simply making provision of few cm2 of copper on the PCB. Furthermore, the pin close to the high-voltage one is not connected to ease compliance with safety distances on the PCB. The internal fixed oscillator frequency and the integrated non dissipative start-up generator minimize the external component count and power consumption. The device is equipped with a standby function that automatically reduces the oscillator frequency from 65 to 22 kHz under light load conditions to enhance BLOCK DIAGRAM DRAIN (1) START-UP c u d VCC (3) OVER VOLTAGE SUPPLY & UVLO THERMAL S.DOWN + - VREF e t le o r P BROWNOUT + + GND (6,7,8) - so OVER CURRENT b O PWM STANDBY - 2.5V OSC 65/22 kHz ) s ( ct 1 mA COMP (4) u d o PIN CONNECTIONS (Top view) r P e t e l o bs O 2/19 DRAIN GND N.C. GND Vcc GND COMP BOK BOK (5) ) s t( L6590A PIN FUNCTIONS N° Pin Description 1 DRAIN 2 N.C. Not internally connected. Provision for clearance on the PCB. 3 Vcc Supply pin of the IC. An electrolytic capacitor is connected between this pin and ground. The internal start-up generator charges the capacitor until the voltage reaches the start-up threshold. The PWM is stopped if the voltage at the pin exceeds a certain value. 4 COMP PWM Control Input. The voltage on this pin (VCOMP) controls the PWM modulator: the higher VCOMP, the higher the duty cycle. The pin will be driven by a current sink (usually the transistor of an optocoupler) able to modulate VCOMP by modulating the current. 5 BOK Brownout Protection. If the voltage applied to this pin is lower than 2.5V the PWM is disabled. This pin is typically used for sensing the input voltage of the converter through a resistor divider. If not used, the pin can be either left floating or connected to Vcc through a 15 kΩ resistor. 6 to 8 GND Connection of both the source of the internal MOSFET and the return of the bias current of the IC. Pins connected to the metal frame to facilitate heat dissipation. Drain connection of the internal power MOSFET. The internal high voltage start-up generator sinks current from this pin. c u d THERMAL DATA Symbol Parameter Value Unit 35 to 60 °C/W 15 °C/W Value Unit -0.3 to 700 V 0.7 A 18 V 20 mA PWM Control Input Sink Current 3 mA BOK pin Sink Current 1 mA 1.5 W Operating Junction Temperature -40 to 150 °C Storage Temperature -40 to 150 °C Rthj-amb Thermal Resistance Junction-ambient (*) Rthj-pins Thermal Resistance Junction-pins (*) Value depending on PCB copper area and thickness. ABSOLUTE MAXIMUM RATINGS Symbol Drain Current Id o r P e Vcc IC Supply Voltage Iclamp Vcc Zener Current Tj Tstg du e t le o s b O - ct t e l o s b O Ptot (s) Parameter Drain Source Voltage Vds o r P ) s t( Power Dissipation at Tamb < 50°C 3 cm2, 2 oz copper dissipating area on PCB 3/19 L6590A ELECTRICAL CHARACTERISTCS (Tj = -25 to 125°C, Vcc = 10V; unless otherwise specified)) Symbol Parameter Test Condition Min. Typ. Max. Unit POWER SECTION V(BR)DSS Drain Source Voltage Idss RDS(on) Id < 200 µA; Tj = 25 °C Off state drain current Vds = 560V; Tj = 125 °C Drain-to-Source on resistance RDS(on) vs. Tj: see fig. 17 Id = 120mA; Tj = 25 °C Id = 120mA; Tj = 125 °C 700 V 200 µA 13 16 Ω 23 28 PWM CONTROL INPUT Vout High Isource = -0.5mA 3.8 4.5 ICOMP Source Current 1.5V < VCOMP < 3.5V -0.5 -1 RCOMP Dynamic Resistance 1.5V < VCOMP < 3.5V VCOMPH V -2.5 9 kΩ OSCILLATOR SECTION Oscillator Frequency Fosc Tj = 25 °C 58 52 Dmin Min. Duty Cycle VCOMP = 1V Dmax Max. Duty Cycle VCOMP = 4V % 4.5 7 mA 3.5 6 mA -3 -4.5 -7 mA Vcc = 0V to Vccon - 0.5V; Vds = 100 to 400V -2.5 -4.5 -7.5 mA Iclamp = 10mA (*) 15.5 16.5 17.5 V (*) 13.5 14.5 15.5 V (*) 6 6.6 7.2 V 40 V o s b O - IQ Quiescent Current MOS disabled VCC charge Current Vcc = 0V to Vccon - 0.5V; Vds = 100 to 400V; Tj = 25°C r P e Start Threshold voltage t e l o Vccoff ) s ( ct s b O Vdsmin Min operating voltage after Turn on 74 73 fsw = Fosc Vccon kHz 70 e t le Operating Supply Current u d o 72 % Iop VCCclamp VCC Clamp Voltage od ) s t( 0 DEVICE OPERATION SECTION Icharge Pr uc 65 65 mA 67 Drain start voltage CIRCUIT PROTECTIONS Ipklim VccOVP LEB Pulse-by-pulse Current Limit di/dt = 120 mA/ µs 550 625 700 mA Overvoltage Protection Icc = 10 mA (*) 15 16 17 V Masking Time After MOSFET turn-on (**) 120 ns STANDBY SECTION FSB 4/19 Oscillator Frequency 19 22 25 kHz L6590A ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Condition Min. Typ. Max. Unit Ipksb Peak switch current for Standby Operation Transition from Fosc to FSB 80 mA Ipkno Peak switch current for Normal Operation Transition from FSB to Fosc 190 mA BROWNOUT PROTECTION Vth Threshold Voltage Voltage either rising or falling 2.325 2.5 2.675 V IHys Current Hysteresis Vpin = 3V -30 -50 -70 µA VCL Clamp Voltage Ipin = 0.5 mA 5.6 6.4 7.2 V 150 165 THERMAL SHUTDOWN (***) Threshold Hysteresis 40 c u d (*) Parameters tracking one the other (**) Parameter guaranteed by design, not tested in production (***) Parameters guaranteed by design, functionality tested in production e t le ) s ( ct °C ) s t( °C o r P o s b O - u d o r P e t e l o s b O 5/19 L6590A Figure 1. Start-up & UVLO Thresholds Figure 4. IC Consumption Before Start-up Vcc [V] Icc [µA] 15 700 Tj = -25 °C 14 600 13 12 500 11 Tj = 25 °C 400 10 9 Tj = 125 °C 300 8 200 7 6 -50 0 50 100 150 100 7 8 9 10 Tj [°C] 11 12 Figure 2. Start-up Current Generator Figure 5. IC Quiescent Current Icc [mA] Icc [mA] 5.5 14 c u d 4 MOSFET disabled Vdrain = 40 V 5 Tj = -25 °C 3.8 4.5 Tj = 25 °C 3.6 4 15 e t le o s b O - ) s t( Tj = 25 °C o r P 3.4 Tj = 125 °C 3.5 3 13 Vcc [V] Tj = 125 °C 0 2 4 6 8 (s) 10 12 t c u Vcc [V] Tj = -25 °C 3.2 3 6 8 10 12 14 Figure 3. Start-up Current Generator Figure 6. IC Operating Current Icc [mA] Icc [mA] d o r P e 5.5 Vdrain = 60 V t e l o 5 18 5 MOSFET switching @ 65 kHz Tj = -25 °C Tj = 125 °C 4.5 Tj = 25 °C Tj = 25 °C s b O 4.5 16 Vcc [V] 4 Tj = -25 °C 4 Tj = 125 °C 3.5 3.5 3 0 2 4 6 Vcc [V] 6/19 8 10 12 3 7 8 9 10 11 Vcc [V] 12 13 14 15 L6590A Figure 7. IC Operating Current Figure 10. OVP Threshold vs. Temperature Icc [mA] Vth [V] 16 4.4 MOSFET switching @ 22 kHz 4.2 Tj = 125 °C 15.8 4 Tj = 25 °C 15.6 3.8 Tj = -25 °C 3.6 15.4 3.4 15.2 3.2 3 7 8 9 10 11 12 13 14 15 15 -50 0 50 Vcc [V] 100 c u d Ipklim / (Ipklim @ di/dt = 120 mA/µs) fsw [kHz] 1.06 80 Normal operation e t le 1.02 50 o s b O 1 40 Standby 0.98 20 10 -50 0 o r P Tj = 25 °C 1.04 60 30 ) s t( Figure 11. OCP Threshold vs. Current Slope Figure 8. Switching Frequency vs. Temperature 70 150 Tj [°C] (s) t c u 50 100 Tj [°C] 150 od 0.96 50 100 150 200 Figure 9. Vcc clamp vs. Temperature Figure 12. OCP threshold vs. Temperature VCCclamp [V] Ipklim / (Ipklim @ Tj = 25°C) 18 r P e t e l o 17.8 bs 17.6 250 dI/dt [mA/µs] 1.1 di/dt = 120 mA/µs 1.08 1.06 Iclamp = 20 mA O 1.04 17.4 Iclamp = 10 mA 17.2 17 -50 1.02 1 0 50 Tj [°C] 100 150 0.98 -50 0 50 100 150 Tj [°C] 7/19 L6590A Figure 13. COMP pin Characteristic Figure 16. Drain Leakage vs. Drain Voltage VCOMP [V] Idrain [µA] 6 50 Tj = 125 °C Tj = 25 °C 5 40 Tj = 25 °C 30 Tj = -25 °C 4 3 2 20 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 10 100 200 300 ICOMP [mA] 400 500 600 700 Vdrain [V] Figure 14. COMP pin Dynamic Resistance vs. Temperature c u d Rds(ON) / (Rds(ON) @ Tj=25°C) RCOMP [kOhm] 1.8 10.5 1.6 Idrain = 120 mA 1.4 e t le 10 9.5 1.2 9 ) s t( Figure 17. Rds(ON) vs. Temperature o s b O 1 o r P 0.8 8.5 8 -50 0 (s) t c u 50 Tj [°C] 100 150 od 0.6 -50 0 50 100 Figure 15. Breakdown Voltage vs. Temperature Figure 18. Rds(ON) vs. Idrain BVDSS / (BVDSS @ Tj = 25°C) Rds(ON) / (Rds(ON) @ Idrain=120 mA) 1.08 r P e 1.3 t e l o 1.06 150 Tj [°C] Tj = 25 °C Idrain = 200 µA 1.04 1.2 s b O 1.02 1.1 1 0.98 1 0.96 0.94 0.92 -50 0 50 Tj [°C] 8/19 100 150 0.9 0 100 200 300 Idrain [mA] 400 500 600 L6590A Figure 19. Coss vs. Drain Voltage Figure 20. Standby Function Thresholds Coss [pF] Drain Peak Current [mA] 250 220 22 kHz → 65 kHz 200 Tj = 25 °C 200 180 160 150 140 100 120 65 kHz → 22 kHz 100 50 80 0 0 100 200 300 400 500 600 700 60 -50 0 50 Vdrain [V] 100 Figure 21. Test Board electrical schematic F1 2A/250V Vin 88 to 264 Vac L 22 mH CxA 100 nF 150 Tj [°C] BD1 DF06M T1 C1 22 µF 400 V CxB 100 nF o s b O D2 STTA106 o r P D4 1N5821 e t le D1 BZW06-154 c u d L1 4.7 µH ) s t( 5 Vdc / 2 A C8 220 µF 10V Rubycon ZL C5, C6, C7 470 µF 16V Rubycon ZL R1 10 Ω R5 1.8 MΩ 1 5 o r P e s b O t e l o (s) 3 ct IC1 du L6590A R6 39 kΩ C2 22 µF 25V 6, 7, 8 D3 1N4148 R2 560 Ω 4 C3 22 nF OP1 PC817 1 4 2 3 R6 6.8 kΩ R3 2.43 kΩ C9 100 nF 1 2 R5 2 kΩ 3 C4 2.2 nF Y1 class IC2 TL431 R4 2.43 kΩ T1 specification Core E20/10/6, ferrite 3C85 or N67 or equivalent ≈0.6 mm gap for a primary inductance of 1.4 mH Lleakage