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L702N

L702N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    L702N - 2A QUAD DARLINGTON SWITCH - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
L702N 数据手册
L702 2A QUAD DARLINGTON SWITCH SUSTAINING VOLTAGE: 70 V 2 A OUTPUT HIGH CURRENT GAIN IDEAL FOR DRI VING SOLENOIDS, DC MOTORS, STEPPER MOTORS, RELAYS, DISPLAYS, ETC. Multiwatt-11 DESCRIPTION The L702 is a monolithic integrated circuit for high current and high voltage switching applications. It comprises four darlington transistors with common emitter and open collector suitable for current sinking applications mounted on the new POWERDIP and Multiwatt® packages. This circuit reduces components, sizes and costs; it can provide direct interface between low level logic and a variety of high current applications. Powerdip 8 + 8 ORDER CODES : L702B - Powerdip L702N - Multiwatt ABSOLUTE MAXIMUM RATINGS Symbol VCEX Vi IC Ptot Parameter Collector-emitter Voltage (input open) Input Voltage Collector Current Total Power Dissipation at Tpin 9 to 16 ≤ 90 °C Total Power Dissipation at Tamb ≤ 70 °C Total Power Dissipationa t Tcase ≤ 90 °C Tstg Tj Storage Temperature Operating Junction Temperature Value 90 30 3 Unit V V A W W } Powerdip Multiwatt 4 1.1 20 W -55 to 150 -25 to 150 °C °C October 1991 1/7 L702 STEPPING MOTOR BUFFER CONNECTION DIAGRAMS (top view) Powerdip Multiwatt SCHEMATIC DIAGRAM (each Darlington) 2/7 L702 THERMAL DATA Symbol Rth j-amb Rth j-pins 9/16 Rth j-case Parameter Thermal Resistance Junction Ambient Thermal Resistance Junction Pins 9 to 16 Thermal Resistance Junction-case Multiwatt Value Unit °C/W °C/W °C/W } Powerdip Max Max Max 70 14 3 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Symbol ICEX VCE(sust) VCE(sat) hFE Ii Parameter Output Leakage Current Collector Emitter (°) Sustaining Voltage Collector Emitter Saturation Voltage DC Forward Current Gain Input Current Test conditions VCE = 90 V IC = 100 mA IC = 1.25 A Ii = 2 mA IC = 1 A VCE = 3 V Vi = 3.75 V Vi = 2.4 V Open Collector Off Condition On Condition Ton Toff Turn On Time Turn Off Time VCE = 70 V VCE = 3 V Vs = 12 V RL = 10 Ω IC ≤ 0.1 mA IC ≥ 1 A 2.4 0.3 1 1.000 70 1.3 4.000 7 3 11 6 0.4 mA mA V V µs µs 1.9 Min. Typ. 10 Max. 50 Unit µA V V Vi Input Voltage Figure 1. Switching Time. Figure 2. ton and toff Test Circuit. 3/7 L702 Figure 3. Peak Collector Current vs. Duty Cycle and Number of Outputs (L702B only) Fi g ure 4 . C ol l ector Emi tter Saturation Voltage vs. Collector Current. Figure 5. Collector Current vs. Input Voltage. Figure 6. Input Current vs. Input Voltage. Figure 7. Safe Operating Areas (L702B). Figure 8. Safe Operating Areas (L702N). 4/7 L702 MULTIWATT11 PACKAGE MECHANICAL DATA DIM. MIN. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 21.5 21.4 17.4 17.25 10.3 2.65 4.1 4.88 1.9 1.9 3.65 4.3 5.08 17.5 10.7 0.49 0.88 1.57 16.87 19.6 20.2 22.3 22.2 18.1 17.75 10.9 2.9 4.5 5.3 2.6 2.6 3.85 0.846 0.843 0.685 0.679 0.406 0.104 0.161 0.192 0.075 0.075 0.144 0.169 0.200 0.689 0.421 1.7 17 1 0.55 0.95 1.83 17.13 0.019 0.035 0.062 0.664 0.772 0.795 0.878 0.874 0.713 0.699 0.429 0.114 0.177 0.209 0.102 0.102 0.152 0.067 0.669 mm TYP. MAX. 5 2.65 1.6 0.039 0.022 0.037 0.072 0.674 MIN. inch TYP. MAX. 0.197 0.104 0.063 5/7 L702 POWERDIP PACKAGE MECHANICAL DATA DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 17.78 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 20.0 0.346 0.100 0.700 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.787 0.055 inch TYP. MAX. 6/7 L702 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 7/7
L702N
物料型号: - L702B(Powerdip封装) - L702N(Multiwatt封装)

器件简介: L702是一款用于高电流和高电压开关应用的单片集成电路,包含四个共发射极和开集电极的达林顿晶体管,适合用于电流吸收应用,安装在新的POWERDIP和Multiwatt®封装上。

引脚分配: 文档中提供了两种封装的连接图(Powerdip和Multiwatt)以及原理图,展示了各个引脚的连接方式。

参数特性: - 维持电压:70V - 输出电流:2A - 集电极-发射极电压(输入开路)最大值:90V - 输入电压最大值:30V - 集电极电流最大值:3A - 功率耗散:Powerdip为4W,Multiwatt为20W - 存储温度范围:-55至150°C - 工作结温范围:-25至150°C

功能详解: L702可以减少组件、尺寸和成本,能够提供低电平逻辑与各种高电流应用之间的直接接口,非常适合驱动继电器、显示器等。

应用信息: L702适用于驱动继电器、直流电机、步进电机、显示器等高电流应用。

封装信息: - Multiwatt11封装的尺寸数据和机械数据 - Powerdip封装的尺寸数据和机械数据
L702N 价格&库存

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