LCP1511DRL

LCP1511D ® Application Specific Discretes A.S.D.™ PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES n n n n n n DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR. WIDE NEGATIVE FIRING VOLTAGE RANGE : VMGL = -80V max. LOW DYNAMIC SWITCHING VOLTAGES : VFP and VDGL. LOW GATE TRIGGERING CURRENT : IGT = 5mA max. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. SO-8 DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT through the gate. This component presents a very low gate trigge-ring current (IGT) in order to reduce the current consumption on printed circuit board during the firing phase. A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. ) s ( ct u d o r P e t e l o s b O VDE 0433 : VDE 0878 : I3124 : FCC part 68 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs BELLCORE TR-NWT-001089 : 2/10µs 2/10µs (*) with series resistors or PTC. October 2003 - Ed: 4 o r P SCHEMATIC DIAGRAM e t le o s b O - COMPLIES WITH THE FOLLOWING STANDARDS CCITT K20 : c u d ) s t( TIP 1 8 TIP GATE 2 7 GND NC 3 6 GND RING 4 5 RING 1kV 25A 2kV 38A (*) 1.5kV 40A 1kV 25A 2.5kV 170A (*) 2.5kV 170A (*) TM: ASD is trademarks of STMicroelectronics. 1/7 LCP1511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs 30 38 170 A ITSM Non repetitive surge peak on-state current (F = 50Hz) tp = 10ms t = 1s 8 3.5 A IGSM Maximum gate current (half sine wave tp = 10ms) 2 A VMLG VMGL Maximum voltage LINE / GROUND Maximum voltage GATE / LINE -100 -80 V - 55 to + 150 150 °C 260 °C Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s % I PP Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs 100 c u d 50 e t le 0 tr THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient ) s ( ct o r P t tp o s b O - u d o ) s t( Value Unit 170 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) r P e Symbol IRM bs VRM Holding current Reverse leakage current LINE/GND Reverse leakage current GATE/LINE Reverse voltage LINE/GND VF Forward drop voltage LINE/GND VGT Gate triggering voltage VFP Peak forward voltage LINE/GND VDGL Dynamic switching voltage GATE/LINE VGATE GATE/GND voltage VLG LINE/GND voltage C 2/7 I t e l o IH O IF Gate triggering current IGT IRG Parameter Off-state capacitance LINE/GND VLG VGATE VRM VF IRM IH IPP LCP1511D 1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C) Symbol Test conditions VF IF=5A tp=500µs VFP 10/700µs 1.2/50µs 2/10µs 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω Maximum Unit 3 V 5 7 12 V (see note 1) Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card. 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C) Symbol Test conditions Min. Max. Unit 5 mA IGT VGND/LINE = -48V 0.2 IH VGATE =-48V (see note 2) 150 VGT at IGT IRG Tc=25°C Tc=70°C Note 2 : 2.5 uc VRG =-75V VRG =-75V VGATE= -48V (see note 3) 10/700µs 1.5kV Rp=10Ω 1.2/50µs 1.5kV Rp=10Ω 2/10µs 2.5kV Rp=62Ω VDGL mA IPP=30A IPP=30A IPP=38A d o r See the functional holding current (IH) test circuit 2. P e let 5 50 10 20 25 ) s t( V µA V o s b O - 3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C) ) s ( ct Symbol Test conditions Tc=25°C Tc=70°C IRM du VGATE/LINE = -1V VGATE/LINE = -1V o r P e t e l o VRM =-75V VRM =-75V Maximum Unit 5 50 µA APPLICATION NOTE s b O TIP 1 IN OUT 8 TIP 7 GATE 2 GND 6 NC 3 RING 4 In order to take advantage of the “4 point” structure of the LCP, the TIP and RING lines go across the device. In such case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. IN OUT 5 RING 3/7 LCP1511D FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST R P D.U.T. VBAT = - 48V Surge generator This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs. - The D.U.T. will come back to the off-state within a duration of 50ms max. e t le TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS (V is defined in unload condition) P L VP o r P R4 TIP R2 (s) t c u C1 o s b O - c u d R1 RING R3 C2 d o r P e t e l o s b O 4/7 ) s t( G ND Pulse (µs) Vp C1 C2 L R1 R2 R3 R4 IPP Rp tr tp (V) (µF) (nF) (µH) (Ω) (Ω) (Ω) (Ω) (A) (Ω) 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 LCP1511D FUNCTIONAL DESCRIPTION LINE A PROTECTION : – For positive surges versus GND, the diode D1 will conduct. – For negative surges versus GND, the protection device P1 will trigger at a voltage fixed by the -VBAT reference. TIP LINE A D1 P1 - VBAT – For surges on line B, the operating mode is the same, D2 or P2 is activated. It is recommended to add a capacitor (C=220nF) close to the gate of the LCP, in order to speed up the triggering. C P2 D2 LINE B LINE B PROTECTION : RING c u d Surge peak current versus overload duration. ITSM(A) 10 F=50Hz Tj initial=25°C 9 e t le 8 7 6 5 4 3 2 1 ) s ( ct t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 ) s t( o r P o s b O - 1E+3 u d o r P e t e l o s b O 5/7 LCP1511D APPLICATION CIRCUIT : typical SLIC protection concept RING GENERATOR - VBAT PTC LINE A T E S T RING RELAY R E L A Y S THBTxxxD LINE B e t le o s bD LCP 15 1 O 1 ) s ( t c u d o r P e LINE CARD PROTECTION IH =150 mA VERSION t e l o MARKING 6/7 o r P LCP1511D PTC s b O c u d 220 nF ORDER CODE Package Type Marking SO-8 LCP1511D CP151D PACKAGE 1 : SO-8 ) s t( SLIC RL RL : tape and reel : tube DYNAMIC LCP1511D PACKAGE MECHANICAL DATA SO-8 Plastic DIMENSIONS REF. Millimetres Min. Typ. Max. A a1 0.1 a2 Typ. Max. 1.75 0.069 0.25 0.004 0.010 1.65 0.065 b 0.35 0.48 0.014 0.019 0.19 0.25 0.007 0.010 0.50 0.020 c1 45° (typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 e3 3.81 0.150 uc 3.8 4.0 L 0.4 1.27 0.016 0.15 d o r P e let S ) s t( 0.050 F M ) s ( ct Min. b1 C Weight = 0.08 g. Inches 0.6 0.157 0.050 0.024 8° (max) o s b O - Packaging : Product supplied in antistatic tubes or tape and reel . u d o r P e s b O t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 7/7