LET16045C
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Datasheet - production data
Features
• Excellent thermal stability
• Common source configuration
• POUT (@28 V) = 45 W with 16 dB gain @ 1600
MHz
• BeO free package
• In compliance with the 2002/95/EC European
directive
M243
epoxy sealed
Description
The LET16045C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz. The LET16045C is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for
INMARSAT satellite communications.
Figure 1. Pin out
1
3
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Order code
Package
Branding
LET16045C
M243
LET16045C
April 2014
This is information on a product in full production.
DocID022224 Rev 3
1/9
www.st.com
Maximum ratings
1
LET16045C
Maximum ratings
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-source voltage
80
V
VGS
Gate-source voltage
-0.5 to +15
V
9
A
Power dissipation (@ TC = 70 °C)
100
W
Max. operating junction temperature
200
°C
-65 to +150
°C
Value
Unit
1.3
°C/W
ID
PDISS
TJ
TSTG
Drain current
Storage temperature
Table 3. Thermal data
Symbol
Rth(JC)
2/9
Parameter
Junction-case thermal resistance
DocID022224 Rev 3
LET16045C
2
Electrical characteristics
Electrical characteristics
TC = 25 °C
Table 4. Static
Symbol
Test conditions
V(BR)DSS VGS = 0 V; IDS = 10 mA
Min.
Typ.
Max.
80
Unit
V
IDSS
VGS = 0 V; VDS = 28 V
1
μA
IGSS
VGS = 20 V; VDS = 0 V
1
μA
5.0
V
1.1
V
VGS(Q)
VDS = 28 V; ID = 300 mA
VDS(ON)
VGS = 10 V; ID = 3 A
GFS
VDS = 10 V; ID = 3 A
CISS
VGS = 0 V; VDS = 28 V; f = 1 MHz
58
pF
COSS
VGS = 0 V; VDS = 28 V; f = 1 MHz
29
pF
CRSS
VGS = 0 V; VDS = 28 V; f = 1 MHz
0.8
pF
2.0
2.5
mho
Table 5. Dynamic
Symbol
Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 28 V; IDQ = 400 mA; PIN = 2 W
45
54
W
GPS
VDD = 28 V; IDQ = 400 mA; POUT = 45 W
15
16
dB
hD
VDD = 28 V; IDQ = 400 mA; POUT = 45 W
50
55
Load
VDD = 28 V; IDQ = 400 mA; POUT = 50 W; f = 1600 MHz
mismatch All phase angles
-
20:1
%
VSWR
Table 6. Impedance data
Frequency (MHz)
Z source (Ω)
Z load (Ω)
1600
1.1 - j1.6
1.1 - j0.6
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Typical performances
3
LET16045C
Typical performances
Figure 2. Gain and efficiency vs output power Figure 3. Gain vs ouptut power and bias current
70
22
20
60
20
18
50
Gain
Gain (dB)
22
Efficiency
16
40
14
30
Freq = 1600 MHz
VDD = 28V
IDQ = 400 mA
12
10
8
0
10
20
30
40
50
Gain (dB)
24
Efficiency (%)
80
24
14
12
10
10
0
8
Freq = 1600 MHz
VDD = 28V
0
Output power (W)
Figure 4. Ouptut power vs drain supply voltage
Freq = 1600 MHz
IDQ = 400 mA
22
24
Pin = 1.5W
26
28
Pin = 2.5W
30
32
34
Supply voltage (V)
AM10214V1
4/9
10
20
30
40
50
60
70
Output Power (W)
AM02167V2
Pin = 2W
Idq = 600 mA
16
Output Power (W)
75
70
65
60
55
50
45
40
35
30
25
Idq = 400 mA
18
20
60
Idq = 100mA
DocID022224 Rev 3
AM10213V1
LET16045C
Board layout, schematic and BOM
Figure 5. Board layout
C10
C11
+
C13
+
B1
+
4
Board layout, schematic and BOM
R1
R3
B2
R2
C9
C8
C4
L1
C
+
B3
C12
L2
C2
C1
+
B4
C6
C3
C7
C5
STMicroelectronics, Inc.
LET16045
LOG xxxx
REV
INPUT
STMicroelectronics, Inc.
LET16045
LOG xxxx
REV
OUTPUT
C
GIPG290420140950FSR
Figure 6. Schematic
R1
FB1
VGG
FB2
C13
FB3
R3
FB4
Vdd
R2
C10
C11
C12
C9
C8
L2
L1
TL7
TL1
TL2
TL3
TL4
C2
C1
TL5
TL8
TL9
TL10
TL12
TL11
C7
TL6
DUT
C4
C5
C6
C3
GIPG290420140944FSR
DocID022224 Rev 3
5/9
9
Board layout, schematic and BOM
LET16045C
Table 7. Component list
6/9
Item
Qty
Part number
Vendor
Description
R1
1
CR1206-8W-561JB
VENKEL
560 OHM, 1/8W surface mount chip
resistor
R2
1
CR1206-8W-132JB
VENKEL
1.3K OHM, 1/8W surface mount chip
resistor
R3
1
CR1206-8W-100JB
VENKEL
10 OHM, 1/8W surface mount chip
resistor
FB1,2,3,4,
4
2743021447
FAIR-RITE
CORP
Surface Mount EMI sheild bead
C1,C4,C5,C6
4
JOHANSON
0.6-4.5pF giga trim variable capacitor
C2,C7,C9,C12
4
ATC100B470XXXX
ATC
47 pF chip capacitor
C3
1
27291PC
JOHANSON
0.8-8pF giga trim variable capacitor
C8
1
ATC100B330XXXX
ATC
33pF chip capacitor
C10
1
330uF, 50V electrolytic capacitor
C11
1
10uF, 63V electrolytic capacitor
C13
1
100uF, 63V electrolytic capacitor
L1, L2
2
TL1, TL2
2
L= 1.350in [34.29mm]
W=0.082in [2.080mm]
TL3
1
L= 0.469in [11.91mm]
W=0.080in [2.020mm]
TL4, TL5
2
L= 0.277in [7.03mm]
W=0.323in [8.210mm]
TL6
1
L= 0.207in [5.26mm]
W=0.506in [12.85mm]
TL7
1
L= 0.208in [5.28mm]
W=0.506in [12.85mm]
TL8,TL9
2
L= 0.275in [6.98mm]
W=0.324in [8.230mm]
TL10,TL11
2
L= 0.470in [11.93mm]
W=0.080in [2.020mm]
TL12
1
L= 1.351in [34.33mm]
W=0.082in [2.080mm]
Board 3X5
1
1812SMS-33NJ
Coilcraft
Rogers Corp
DocID022224 Rev 3
33 nH coil
Er=2.55
t=0.0026in
h=0.030in
LET16045C
5
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 7. M243 package dimensions
Table 8. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
mm
inch
Dim.
Min.
Typ
Max.
Min.
Typ
Max.
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.1
0.22
0.24
D
14.27
0.562
E
20.07
20.57
0.79
0.81
F
8.89
9.4
0.35
0.37
G
0.1
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.05
0.07
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Revision history
6
LET16045C
Revision history
Table 9. Document revision history
8/9
Date
Revision
Changes
14-Sep-2011
1
Initial release.
04-Nov-2011
2
Updated Table 3: Thermal data, Table 4: Static, Table 5: Dynamic
and Figure 3: Gain vs ouptut power and bias current.
Inserted Table 6: Impedance data and Figure 2: Gain and efficiency
vs output power and Figure 4: Ouptut power vs drain supply voltage.
29-Apr-2014
3
Added Section 4: Board layout, schematic and BOM.
DocID022224 Rev 3
LET16045C
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