LET16060C

LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT (@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive M243 epoxy sealed Description The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. Figure 1. Pin out 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code Package Branding LET16060C M243 LET16060C April 2014 This is information on a product in full production. DocID022249 Rev 3 1/9 www.st.com Maximum ratings 1 LET16060C Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-source voltage 80 V VGS Gate-source voltage -0.5 to +15 V Drain current 12 A Power dissipation (@ TC = 70 °C) 100 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 1.3 °C/W ID PDISS TJ TSTG Storage temperature Table 3. Thermal data Symbol Rth(JC) 2/9 Parameter Junction-case thermal resistance DocID022249 Rev 3 LET16060C 2 Electrical characteristics Electrical characteristics TC = 25 °C Table 4. Static Symbol Test conditions V(BR)DSS VGS = 0 V; IDS = 10 mA Min. Typ. Max. Unit 80 V IDSS VGS = 0 V; VDS = 28 V 1 μA IGSS VGS = 5 V; VDS = 0 V 1 μA 5 V 1.2 V VGS(Q) VDS = 28 V; ID = 400 mA VDS(ON) VGS = 10 V; ID = 3 A GFS VDS = 10 V; ID = 3 A CISS VGS = 0 V; VDS = 28 V; f = 1 MHz 77 pF COSS VGS = 0 V; VDS = 28 V; f = 1 MHz 39 pF CRSS VGS = 0 V; VDS = 28 V; f = 1 MHz 1.2 pF 2 0.8 2.5 mho Table 5. Dynamic Symbol Test conditions POUT VDD = 28 V; IDQ = 400 mA; PIN = 4 W; f = 1600 MHz GPS VDD = 28 V; IDQ = 400 mA; POUT = 60 W; f = 1600 MHz VDD = 28 V; IDQ = 400 mA; PIN = 4 W; f = 1600 MHz hD Load VDD = 28 V; IDQ = 400 mA; POUT = 60 W; f = 1600 MHz mismatch All phase angles Min. Typ. Max. 60 70 W 12.5 13.8 dB 50 55 - 20:1 Unit % VSWR Table 6. Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max Value Unit 1.3 °C/W Table 7. Impedance data Frequency (MHz) Z source (Ω) Z load (Ω) 1600 1.3 - j2.3 0.2 - j.96 DocID022249 Rev 3 3/9 9 Typical performances 3 LET16060C Typical performances Figure 2. Gain and efficiency vs output power Figure 3. Gain vs ouptut power and bias current          *DLQG%   )UHT 0+] 9'' 9 ,'4 P$             *DLQG%    (IILFLHQF\ (IILFLHQF\  *DLQ ,GT P$        )UHT 0+] 9'' 9  $09 2XWSXWSRZHU: Figure 4. Ouptut power vs drain supply voltage )UHT 0+] ,'4 P$ 3LQ :   3LQ :  3LQ :    6XSSO\YROWDJH9 $09 4/9          2XWSXWSRZHU: 2XWSXWSRZHU:            ,GT P$    ,GT P$ DocID022249 Rev 3 $09 LET16060C Board layout, schematic and BOM Figure 5. Board layout C10 C11 + C13 + B1 + 4 Board layout, schematic and BOM R1 R3 B2 R2 C9 C8 C4 L1 C + B3 C12 L2 C2 C1 + B4 C6 C3 C7 C5 STMicroelectronics, Inc. LET16045 LOG xxxx REV INPUT STMicroelectronics, Inc. LET16045 LOG xxxx REV OUTPUT C GIPG290420140950FSR Figure 6. Schematic R1 FB1 VGG FB2 C13 FB3 R3 FB4 Vdd R2 C10 C11 C12 C9 C8 L2 L1 TL7 TL1 TL2 TL3 TL4 C2 C1 TL5 TL8 TL9 TL10 TL12 TL11 C7 TL6 DUT C4 C5 C6 C3 GIPG290420140944FSR DocID022249 Rev 3 5/9 9 Board layout, schematic and BOM LET16060C Table 8. Component list 6/9 Item Qty Part number Vendor Description R1 1 CR1206-8W-561JB VENKEL 560 OHM, 1/8W surface mount chip resistor R2 1 CR1206-8W-132JB VENKEL 1.3K OHM, 1/8W surface mount chip resistor R3 1 CR1206-8W-100JB VENKEL 10 OHM, 1/8W surface mount chip resistor FB1,2,3,4, 4 2743021447 FAIR-RITE CORP Surface Mount EMI sheild bead C1,C4,C5,C6 4 JOHANSON 0.6-4.5pF giga trim variable capacitor C2,C7,C9,C12 4 ATC100B470XXXX ATC 47 pF chip capacitor C3 1 27291PC JOHANSON 0.8-8pF giga trim variable capacitor C8 1 ATC100B330XXXX ATC 33pF chip capacitor C10 1 330uF, 50V electrolytic capacitor C11 1 10uF, 63V electrolytic capacitor C13 1 100uF, 63V electrolytic capacitor L1, L2 2 TL1, TL2 2 L= 1.350in [34.29mm] W=0.082in [2.080mm] TL3 1 L= 0.469in [11.91mm] W=0.080in [2.020mm] TL4, TL5 2 L= 0.277in [7.03mm] W=0.323in [8.210mm] TL6 1 L= 0.207in [5.26mm] W=0.506in [12.85mm] TL7 1 L= 0.208in [5.28mm] W=0.506in [12.85mm] TL8,TL9 2 L= 0.275in [6.98mm] W=0.324in [8.230mm] TL10,TL11 2 L= 0.470in [11.93mm] W=0.080in [2.020mm] TL12 1 L= 1.351in [34.33mm] W=0.082in [2.080mm] Board 3X5 1 1812SMS-33NJ Coilcraft Rogers Corp DocID022249 Rev 3 33 nH coil Er=2.55 t=0.0026in h=0.030in LET16060C 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 7. M243 package dimensions Table 9. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data mm inch Dim. Min. Typ Max. Min. Typ Max. A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.1 0.22 0.24 D 14.27 0.562 E 20.07 20.57 0.79 0.81 F 8.89 9.4 0.35 0.37 G 0.1 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.05 0.07 DocID022249 Rev 3 7/9 9 Revision history 6 LET16060C Revision history Table 10. Document revision history 8/9 Date Revision Changes 20-Sep-2011 1 Initial release. 15-Nov-2011 2 Modified Table 4: VGS(Q) and VDS(ON) Modified Table 5 and 6 Inserted: Table 7 Inserted: Figure 2, 3 and 4 19-Apr-2014 3 Added Section 4: Board layout, schematic and BOM. DocID022249 Rev 3 LET16060C Please Read Carefully: Information in this document is provided solely in connection with ST products. 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