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LET20015

LET20015

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    LET20015 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
LET20015 数据手册
LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20015’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE LET90015 PowerSO-10RF (formed lead) BRANDING LET90015 PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature ° Parameter Value 65 -0.5 to +15 2 TBD 165 -65 to +175 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance TBD °C/W 1/5 February, 27 2003 LET20015 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB GPS ηD IMD3(1) Load mismatch VDD = 26 V VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD IDQ = TBD POUT = 15 W POUT = 15 W POUT = 15 W PEP POUT = 15 W 15 11 45 13 50 -32 -28 10:1 W dB % dBc VSWR IDQ = TBD VDD = 26 V ALL PHASE ANGLES DYNAMIC (f = 1930 - 1990 MHz) POUT(2) GPS ηD (2) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 15 W POUT = 15 W 10 11 40 15 13 45 2.5 W dB % W 885 KHz < -47 dBc POUT(CDMA) (3) 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc ηD(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 20 % (1) f1 = 2000 MHz, f2 = 2000.1 MHz (2) 1 dB Compression point (3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 2/5 LET20015 PowerSO-10RF Straight Lead MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 mm MIN. 1.62 3.4 1.2 0.15 TYP. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.8 6 deg 10 deg 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 MAX 1.72 3.6 1.4 0.25 MIN. 0.064 0.134 0.046 0.005 Inch TYP. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 MAX 0.068 0.142 0.054 0.009 Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 3/5 LET20015 PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 mm MIN. 0 3.4 1.2 0.15 TYP. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 0.8 5 deg 8 deg 2 deg 1.1 0.25 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 MAX 0.1 3.6 1.4 0.25 MIN. 0. 0.134 0.046 0.005 Inch TYP. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.031 5 deg 6 deg 10 deg 8 deg 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 MAX 0.0038 0.142 0.054 0.009 T1 6 deg T2 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 4/5 LET20015 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com 5/5
LET20015
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种外设和接口。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等。

6. 应用信息:适用于工业控制、消费电子、医疗设备等领域。
LET20015 价格&库存

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