LET21008

LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11 dB gain @ 2170 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) ORDER CODE LET21008 BRANDING 21008 DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21008’s superior linearity performance makes it an ideal solution for base station applications. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 2.0 TBD 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance TBD °C/W April, 15 2003 1/4 LET21008 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2170 MHz) POUT(1) ηD(1) Load mismatch VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD 12 45 15 50 20:1 W % VSWR VDD = 26 V POUT = 8 W ALL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) POUT(1) ηD(1) GP POUT(W-CDMA) ηD(W-CDMA) (1) 1 dB Compression point VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD 8 40 11 45 13 2.5 25 W % dB W % VDD = 26 V IDQ = TBD POUT = 8 W ACPR -45 dBc ACPR -45 dBc 2/4 LET21008 PowerFLAT™ MECHANICAL DATA DIM. A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 MAX 1.00 0.05 0.35 0.58 0.79 0.006 0.017 0.025 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 MAX 0.039 0.002 0.014 0.023 0.031 3/4 LET21008 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4