LET9002

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 17 dB gain @ 960 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9002 BRANDING 9002 DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 °C/W April, 15 2003 1/4 LET9002 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 125 mA ID = 200 mA VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz -TBD TBD TBD 2.0 Min. 65 1 1 5.0 0.9 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC (f = 960 MHz) Symbol Pout(1) ηD(1) Load mismatch VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 2 W POUT = 2 W Test Conditions Min. 2.5 55 Typ. 3 65 10:1 Max. Unit W % VSWR VDD = 26 V IDQ = TBD ALL PHASE ANGLES (1) 1 dB Compression point DYNAMIC (f = 920 - 960 MHz) Symbol Pout(1) ηD(1) GP VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 2 W Test Conditions Min. 2 55 17 Typ. 2.5 60 Max. Unit W % dB (1) 1 dB Compression point 2/4 LET9002 PowerFLAT™ MECHANICAL DATA DIM. A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 MAX 1.00 0.05 0.35 0.58 0.79 0.006 0.017 0.025 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 MAX 0.039 0.002 0.014 0.023 0.031 3/4 LET9002 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4