LET9006

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9006 BRANDING 9006 DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 °C/W April, 15 2003 1/4 LET9006 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 0.5 A ID = 800 mA VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz TBD TBD TBD TBD 2.0 Min. 65 1 1 5.0 0.9 µA µA V V mho pF pF pF Typ. Max. Unit DYNAMIC (f = 960 MHz) Symbol POUT(1) ηD (1) Test Conditions VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 6 W POUT = 6 W Min. 7 55 Typ. 8 65 Max. Unit W % Load mismatch IDQ = TBD VDD = 26 V ALL PHASE ANGLES 10:1 VSWR (1) 1 dB Compression point DYNAMIC (f = 920 - 960 MHz) Symbol Pout(1) GP ηD (1) Test Conditions VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 6 W POUT = 6 W Min. 6 17 55 Typ. 7 Max. Unit W dB 60 % (1) 1 dB Compression point 2/4 LET9006 PowerFLAT™ MECHANICAL DATA DIM. A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 MAX 1.00 0.05 0.35 0.58 0.79 0.006 0.017 0.025 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 MAX 0.039 0.002 0.014 0.023 0.031 3/4 LET9006 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4