LET9045S

LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9045S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PIN CONNECTION ORDER CODE LET9045S PowerSO-10RF (straight lead) BRANDING LET9045S SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 5 160 165 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.85 °C/W 1/9 February, 27 2003 LET9045S ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 250 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 60 33 2.2 2.0 0.6 Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC (f = 945 MHz) Symbol GP ηD IMD3 P1dB GP ηD Load mismatch Test Conditions VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA ALL PHASE ANGLES POUT = 45 W POUT = 45 W POUT = 45 W 10:1 POUT = 45 W PEP POUT = 45 W PEP POUT = 45 W PEP 60 17.8 59 Min. 17 44 -28 Typ. Max. Unit dB % dBc W dB % VSWR DYNAMIC (f = 925 - 960 MHz) Symbol P1dB GP ηD Test Conditions VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA POUT = 45 W POUT = 45 W Min. Typ. 55 17.2 55 Max. Unit W dB % ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B Rating MSL 3 2/9 LET9045S TYPICAL PERFORMANCE Power Gain Vs Output Power 1000 f = 1 MHz Power Gain Vs Output Power 20 19 18 Idq = 600 mA Idq = 400 mA Idq = 100 mA Idq = 250 mA 100 C (pF) Ciss 17 Gp (dB) Idq = 100 mA Coss 16 15 10 14 Crss 13 12 Vdd = 28 V f = 945 MHz 1 10 Pout (W) 100 1 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Vds (V) Efficiency Vs Output Power 70 Ouput Power Vs Drain Voltage 90 80 70 Pin = 1.5 W 60 50 60 Pout (W) Nd (%) 40 50 40 30 Pin = 1 W 30 20 20 10 Vdd = 28 V Idq = 250 mA f = 945 MHz 0 10 20 30 40 50 60 70 10 0 10 12 14 16 18 20 22 24 26 Idq = 250 mA f = 945 MHz 0 Pout (W) 28 30 32 Vdd (V) Drain Current Vs Gate-Source Voltage 1.5 1.0 Idq (A) 0.5 Vdd = 28 V 0.0 0 1 2 Vgs (V) 3 4 5 3/9 LET9045S TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency 20 Efficiency Vs Frequency 80 75 18 70 65 Gp (dB) 16 Nd (%) 60 55 14 50 Vdd = 28 V Pout = 50 W Idq = 250 mA 12 910 920 930 940 f (MHz) 950 960 970 45 Vdd = 28 V Idq = 250 mA Pout = 50 W 920 930 940 f (MHz) 950 960 970 40 910 Input Return Loss Vs Frequency 0 -4 -8 RL (dB) -12 -16 Vdd = 28 V Idq = 250 mA Pout = 50 W -20 910 920 930 940 f (MHz) 950 960 970 4/9 LET9045S TEST CIRCUIT SCHEMATIC VGG + + + + VD D RF IN RF OUT TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR 120Ω, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE 5/9 LET9045S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER PD57030S 6.4 inches 6/9 4 inches LET9045S TAPE & REEL DIMENSIONS mm MIN. Ao Bo Ko K1 F P1 W 17.9 9.7 4.15 3.6 11.4 23.9 23.7 TYP. 18.0 9.8 4.25 3.7 11.5 24.0 24.0 MAX 18.1 9.9 4.35 3.8 11.6 24.1 24.3 7/9 LET9045S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 mm MIN. 1.62 3.4 1.2 0.15 TYP. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.8 6 deg 10 deg 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 MAX 1.72 3.6 1.4 0.25 MIN. 0.064 0.134 0.046 0.005 Inch TYP. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 MAX 0.068 0.142 0.054 0.009 Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 8/9 LET9045S Information furnished is believed to be accurate and reliable. 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