LET9060S

LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE LET9060S PowerSO-10RF (straight lead) BRANDING LET9060S PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 170 165 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W 1/10 March, 25 2003 LET9060S ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 74 40 2.8 2.0 0.7 Min. 65 1 1 5.0 0.8 Typ. Max. Unit V µA µA V V mho pF pF pF Ref. 7143417B DYNAMIC (f = 945 MHz) Symbol GP ηD IMD3 P1dB GP ηD Load mismatch Test Conditions VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA POUT = 60 W POUT = 60 W 10:1 POUT = 60 W PEP POUT = 60 W PEP POUT = 60 W PEP 70 16.7 61 Min. 17 47 -28 Typ. Max. Unit dB % dBc W dB % VSWR VDD = 26 V IDQ = 250 mA POUT = 60 W ALL PHASE ANGLES DYNAMIC (f = 925 - 960 MHz) Symbol P1dB GP ηD Test Conditions VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA POUT = 60 W POUT = 60 W Min. Typ. 65 16 56 Max. Unit W dB % 2/10 LET9060S IMPEDANCE DATA D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S FREQ. MHz 860 880 900 920 940 960 ZIN (Ω) 0.65 - j 0.05 0.75 - j 0.6 0.9 - j 1.4 0.4 - j 1.3 0.4 - j 0.8 0.5 - j 1.6 ZDL(Ω) 2.0 + j 0.1 2.0 + j 0.1 1.4 + j 0.2 1.4 + j 0.5 1.2 + j 0.3 1.8 + j 1.0 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B Rating MSL 3 3/10 LET9060S TYPICAL PERFORMANCE Power Gain Vs Output Power 1000 f = 1MHz Power Gain Vs Output Power 20 19 Idq = 600 mA 18 Ciss 100 17 Idq = 400 mA C (pF) Idq = 250 mA Coss Gp (dB) 16 15 10 14 Crss 13 Vdd = 26 V 1 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Vds (V) 12 1 10 Pout (W) 100 Efficiency Vs Output Power 70 Ouput Power Vs Drain Voltage 90 80 60 70 50 60 Pout (W) Nd (%) 40 50 40 30 30 20 20 10 Vdd = 26 V Idq = 250 mA 0 0 10 20 30 40 50 60 70 80 90 Pout (W) 10 0 10 Pin = 2.5 W Idq = 250 mA 12 14 16 18 20 22 24 26 28 30 32 Vdd (V) 4/10 LET9060S TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency 20 Efficiency Vs Frequency 80 75 19 18 17 Gp (dB) Nd (%) 70 65 60 16 15 55 50 14 13 Vdd = 26 V Idq = 250 mA Pout = 60 W 920 930 940 f (MHz) 950 960 970 45 Vdd = 26 V Idq = 250 mA Pout = 60 W 920 930 940 f (MHz) 950 960 970 12 910 40 910 Input Return Loss Vs Frequency 0 -4 -8 RL (dB) -12 -16 Vdd = 26 V Idq = 250 mA Pout = 60 W -20 910 920 930 940 f (MHz) 950 960 970 5/10 LET9060S TEST CIRCUIT SCHEMATIC VGG + + + + VD D RF IN RF OUT TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR 120Ω, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE 6/10 LET9060S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER PD57030S 6.4 inches 4 inches 7/10 LET9060S TAPE & REEL DIMENSIONS mm MIN. Ao Bo Ko K1 F P1 W 17.9 9.7 4.15 3.6 11.4 23.9 23.7 TYP. 18.0 9.8 4.25 3.7 11.5 24.0 24.0 MAX 18.1 9.9 4.35 3.8 11.6 24.1 24.3 8/10 LET9060S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 mm MIN. 1.62 3.4 1.2 0.15 TYP. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.8 6 deg 10 deg 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 MAX 1.72 3.6 1.4 0.25 MIN. 0.064 0.134 0.046 0.005 Inch TYP. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 MAX 0.068 0.142 0.054 0.009 Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 9/10 LET9060S Information furnished is believed to be accurate and reliable. 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