LET9070CB
RF power transistor from the LdmoST family
of N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
Features
• Excellent thermal stability
• Common source configuration
• POUT (@ 28 V)= 70 W with 17 dB gain @ 945
MHz
• BeO free package
M243
epoxy sealed
• In compliance with the 2002/95/EC European
directive
• Bidirectional ESD
Description
Figure 1. Pin out
1
3
The LET9070CB is a common source N-channel
enhancement mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9070CB is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Order code
Package
Branding
LET9070CB
M243
LET9070CB
July 2013
This is information on a product in full production.
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www.st.com
14
Contents
LET9070CB
Contents
1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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LET9070CB
1
Maximum ratings
Maximum ratings
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-source voltage
80
V
VGS
Gate-source voltage
-10 to +15
V
Drain current
12
A
Power dissipation (@ TC = 70 °C)
130
W
Max. operating junction temperature
200
°C
-65 to +150
°C
Value
Unit
1.0
°C/W
ID
PDISS
TJ
TSTG
Storage temperature
Table 3. Thermal data
Symbol
Rth(JC)
Parameter
Junction-case thermal resistance
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Electrical characteristics
2
LET9070CB
Electrical characteristics
(TC = 25 °C)
Table 4. Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0; IDS = 10 mA
IDSS
VGS = 0; VDS = 28 V
1
μA
IGSS
VGS = 5; VDS = 0
1
μA
5.0
V
1.2
V
80
V
VGS(Q)
VDS = 28; ID = 100 mA
2.0
VDS(ON)
VGS = 10 V; ID = 3 A
GFS
VDS = 10 V; ID = 3 A
CISS
VGS = 0; VDS = 28 V; f = 1 MHz
78
pF
COSS
VGS = 0; VDS = 28 V; f = 1 MHz
42
pF
CRSS
VGS = 0; VDS = 28 V; f = 1 MHz
2.7
pF
0.8
2.5
mho
Table 5. Dynamic
Symbol
POUT
VDD = 28 V; IDQ = 400 mA; PIN = 2.5 W; f = 945 MHz
GPS
VDD = 28 V; IDQ = 400 mA; POUT = 70 W; f = 945 MHz
hD
Load
mismatch
4/14
Test conditions
VDD = 28 V; IDQ = 400 mA; PIN = 2.5 W; f = 945 MHz
VDD = 35 V; IDQ = 400 mA; POUT = 100 W; f = 945 MHz
All phase angles
DocID023782 Rev 2
Min.
Typ.
70
80
W
17
dB
65
%
20:1
VSWR
60
Max.
Unit
LET9070CB
3
Impedance data
Impedance data
Figure 2. Impedance data
D
ZDL
Typical drain
load
Typical
input
G
Zin
S
Table 6. Impedance data
Frequency
ZIN (Ω)
ZLOAD (Ω)
100
0.456 -j19.309
3.851 +j0.242
150
0.458 -j12.682
3.791 +j0.353
200
0.464 -j9.320
3.711 +j0.452
250
0.474 -j7.259
3.613 +j0.537
300
0.484 -j5.859
3500 +j0.605
350
0.492 -j4.832
3.376 +j0.655
400
0.500 -j4.038
3.243 +j0.687
450
0.507 -j3.401
3.106 +j0.700
500
0.515 -j2.873
2.966 +j0.697
550
0.525 -j2.423
2.826 +j0.676
600
0.534 -j2.035
2.688 +j0.640
650
0.542 -j1.692
2.553 +j0.591
700
0.549 -j1.394
2.422 +j0.529
750
0.556 -j1.117
2.297 +j0.456
800
0.563 -j0.864
2.178 +j0.373
850
0.570 -j0.629
2.065 +j0.282
900
0.577 -j0.410
1.958 +j0.184
950
0.585 -j0.204
1.857 +j0.079
1000
0.592 -j0.009
1.762 -j0.03
1050
0.613 +j0.172
1.673 -j0.145
1100
0.621 +j0.347
1.590 -j0.264
1150
0.628 +j0.516
1.513 -j0.386
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Impedance data
LET9070CB
Table 6. Impedance data (continued)
6/14
Frequency
ZIN (Ω)
ZLOAD (Ω)
1200
0.633 +j0.680
1.440 -j0.510
1250
0.639 +j0.839
1.373 -j0.637
1300
0.644 +j0.995
1.309 -j0.766
1350
0.648 +j1.148
1.250 -j0.897
1400
0.653 +j1.299
1.195 -j1.030
1450
0.657 +j1.448
1.144 -j1.164
1500
0.660 +j1.597
1.096 -j1.299
1550
0.664 +j1.744
1.051 -j1.436
1600
0.667 +j1.891
1.010 -j1.574
1650
0.670 +j2.038
0.971 -j1.712
1700
0.673 +j2.184
0.934 -j1.852
1750
0.677 +j2.331
0.900 -j1.993
1800
0.680 +j2.478
0.868 -j2.136
1850
0.684 +j2.625
0.838 -j2.279
1900
0.688 +j2.773
0.810 -j2.423
1950
0.692 +j2.921
0.784 -j2.569
2000
0.696 +j3.070
0.759 -j2.716
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LET9070CB
4
Typical performance
Typical performance
Figure 3. DC output characteristics
gipd080720131041FSR
ID
(A)
10V
gipd080720131148FSR
C
(pF)
8V
9V
12
Figure 4. Capacitance variation
10
7V
100
Ciss
Coss
8
6
6V
10
4
Crss
2
0
0
VGS= 5V
4
2
6
8
10 12 14 16
Figure 5. Gain vs output power, freq = 945 MHz,
Vdd = 28 V
gipd080720131127FSR
Gain
(dB)
1
0
VDS(V)
20
10
Figure 6. Gain and efficiency vs output power,
freq = 945 MHz, Vdd = 28 V, Idq= 0.4 A
gipd080720131136FSR
Gain
(dB)
Efficiency
22
22
Idq = 0.2A
Idq = 0.4A
VDS(V)
30
70
Idq = 0.6A
20
20
18
16
16
14
14
12
12
50
10
0
20
40
60
80
Output power(W)
10
0
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40
Efficiency (%)
18
60
Gain
30
20
40
60
80
20
Output power(W)
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Typical performance
LET9070CB
Figure 7. Gain vs output power, freq = 945 MHz,
Idq = 0.4 A
gipd080720131155FSR
Gain
(dB)
22
Vdd = 24V
Vdd = 26V
Vdd = 28V
Vdd = 30V
Figure 8. Gain and efficiency vs output power,
freq = 945 MHz, Vdd = 32 V, Idq= 0.4 A
gipd080720131208FSR
Gain
(dB)
Vdd = 32V
20
Efficiency
22
80
70
20
60
18
18
50
16
16
40
14
14
30
12
12
20
10
0
20
40
60
80
100 Output power(W)
Figure 9. Output power vs supply voltage,
freq = 945 MHz, Idq = 0.4 A
gipd080720131447FSR
Pout
(W)
Pin = 1W
Pin = 1.3W
Pin = 1.6W
Pin = 2W
Pin = 3W
120
110
100
90
80
70
60
50
40
22
8/14
24
26
28
30
32
VDD(V)
DocID023782 Rev 2
10
0
20
40
60
80
Efficiency (%)
Gain
10
100 Output power(W)
LET9070CB
5
Test circuit
Test circuit
Figure 10. Test circuit schematic
R2
FB1
VGG
FB4
VDD
C1
FB2
R1
FB3
R3
L2
C10
C2
TL1
C3
L1
C6
TL6
TL2
C11
TL3
TL4
C4
TL5
TL7
DUT
TL8
TL9
TL10
C7
C9
TL11
C8
C5
GIPD080720131400FSR
Table 7. Test circuit component part list
Item
Qty
Part number
Vendor
Description
R1, R2
2
CR1206-8W-112JB
VENKEL
1.5 K OHM, 1/8W surface
mount chip resistor
R3
1
CR1206-8W-100JB
VENKEL
0 OHM, 1/8W surface mount
chip resistor
Coil (L1&L2)
2
1812SMS-33NJ
Coilcraft
33 nH coil
B1,B2,B3,B4
5
2743021447
FAIR-RITE CORP
C1
1
C2, C3, C9, C10
4
C4, C8
2
C5
1
ATC100B3R6
ATC
3.6pF Chip Capacitor
C6
1
ATC100B100
ATC
10pF Chip Capacitor
C7
1
C11
1
Surface Mount EMI Sheild
Bead
100uF, 63V Electrolytic
Capacitor
ATC100B470
ATC
JOHANSON
JOHANSON
47 pF Chip Capacitor
0.8-8pF Giga Trim Variable
Capacitor
0.6-4.5pF Giga Trim Variable
Capacitor
330μF, 50V Electrolytic
Capacitor
TL1
L= 1.350in
W=0.082in
TL2
L= 0.234in
W=0.082in
TL3
L= 0.234in
W=0.082in
TL4
L= 0.277in
W=0.323in
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Test circuit
LET9070CB
Table 7. Test circuit component part list (continued)
Item
Qty
Part number
Vendor
Description
TL5
L=0.207 in
W=0.506in
TL6
L= 0.208in
W=0.506in
TL7
L= 0.137in
W=0.324in
TL8
L= 0.137in
W=0.324in
TL9
L= 0.150in
W=0.082in
TL10
L= 0.320in
W=0.082in
TL11
L= 1.350in
W=0.082in
Board 3X5
1
Er=2.55 t=2 Oz
H=0.030in
Rogers Corp
Figure 11. Test circuit
B1
+
C1
R1
B2
R2
B4
R3
+
B5
C11
C10
C6
C2
C3 TL2
TL1
TL8
TL7
L1
TL3
TL4
TL5
L2
TL9
TL6
C9
TL10
TL11
C4
C5
C
STMicroelectronics, Inc.
LET9070CB
LOG xxxx
REV
INPUT
C7
C8
C
STMicroelectronics, Inc.
LET9070CB
LOG xxxx
REV
OUTPUT
GIPD080720131328FSR
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LET9070CB
6
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID023782 Rev 2
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Package mechanical data
LET9070CB
Table 8. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
Dim.
mm.
Min.
Inch
Typ.
Max.
Min.
Typ.
Max.
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.10
0.220
0.240
D
14.27
0.562
E
20.07
20.57
0.790
0.810
F
8.89
9.40
0.350
0.370
G
0.10
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.050
0.070
Figure 12. M243 (.230 x .360 2L N/HERM W/FLG) package dimensions(a)
2xA
.107/2.72x45°
1
2xA
(2x).130/3.30 DIA
4x45°
C
2x.045/1.14 Max
optional
3
2
D
E
F
2xG
J
2xI
H
1022142_Rev_E
a. Controlled dimensions are in inches.
12/14
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LET9070CB
7
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
12-Oct-2012
1
Initial release.
08-Jul-2013
2
Updated features in cover page and Table 5: Dynamic.
Added Section 4: Typical performance and Section 5: Test circuit.
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LET9070CB
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