LET9180

LET9180 180 W, 32 V Wideband LDMOS transistor Datasheet - target specification Features • Excellent thermal stability • Common source configuration push-pull • POUT = 180 W with 19 dB gain @ 860 MHz • BeO-free package Description The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 1 2 5 4 1-2 Drain 3 Source 4-5 Gate Table 1. Device summary May 2013 Order code Packaging Branding LET9180 M246 LET9180 DocID024706 Rev 1 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/10 www.st.com 10 Contents LET9180 Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 DocID024706 Rev 1 LET9180 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Value Unit V(BR)DSS Drain-source voltage 80 V VGS Gate-source voltage - 10 / + 15 V Drain current 24 A Power dissipation 318 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.55 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 3. Thermal data Symbol RthJC Parameter Junction - case thermal resistance DocID024706 Rev 1 3/10 Electrical characteristics 2 LET9180 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section) Symbol 2.2 Test conditions Min Typ Max Unit V(BR)DSS VGS = 0, IDS = 10 mA 80 V IDSS VGS = 0, VDS = 28 V 1 μA IGSS VGS = 5 V, VDS = 0 1 μA 5.0 V 1.2 V VGS(Q) VDS = 28 V, ID = 100 mA VDS(ON) VGS = 10 V, ID = 3 A GFS VDS = 10 V, ID = 3 A CISS VGS = 0, VDS = 32 V, f = 1 MHz 70 pF COSS VGS = 0, VDS = 32 V, f= 1 MHz 36 pF CRSS VGS = 0, VDS = 32 V, f = 1 MHz 0.9 pF 2.0 0.8 2.5 mho Dynamic Table 5. Dynamic (VDD= 32 V, IDQ= 500 mA) Symbol Test conditions Typ POUT f = 860 MHz, PIN = 3 W 150 175 GPS POUT = 180 W, f = 860 MHz 18 20 ηD POUT = 180 W, f = 860 MHz 60 69 POUT = 220 W, f = 860 MHz Load Mismatch all phase angles 4/10 Min DocID024706 Rev 1 Max Unit W - dB % 65:1 VSWR LET9180 3 Impedance data Impedance data Figure 2. Impedance data D ZDL Typical drain load Typical input G Zin S Table 6. Impedance data Frequency MHz Z source (Ω) Z load (Ω) 860 TBD TBD DocID024706 Rev 1 5/10 Typical performances LET9180 4 Typical performances Figure 3. Gain vs output power Figure 4. AM17382v1 Gain (dB) Freq= 860MHz IDQ= 500mA Efficiency vs output power AM17383v1 Efficiency (%) 90 Freq= 860MHz IDQ= 500mA 21 30V 32V 70 34V 36V 19 28V 50 17 36V 28V 15 30 30V 13 0 6/10 40 80 120 160 32V 200 34V 240 Pout(W) 10 0 DocID024706 Rev 1 40 80 120 160 200 240 Pout(W) LET9180 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024706 Rev 1 7/10 Package mechanical data LET9180 Table 7. M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data Dim. mm. Min Typ Inch Max Min Typ Max A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86 .900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 Figure 5. Package dimensions Controlling dimension: Inches 8/10 DocID024706 Rev 1 Ref. 7145054A LET9180 6 Revision history Revision history Table 8. Document revision history Date Revision 29-May-2013 1 Changes Initial release. DocID024706 Rev 1 9/10 LET9180 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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