LF251-LF351

LF151 LF251 - LF351 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER . . . . . . . . . INTERNALLY ADJUSTABLE INPUT OFFSET VOLTAGE LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO VCC+) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J–FET INPUT STAGE INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 16V/µs (typ) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION These circuits are high speed J–FET input single operationalamplifiers incorporatingwell matched,high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devicesfeaturehigh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF351 LF251 LF151 Temperature 0 C, +70 C –40oC, +105oC –55 C, +125 C o o o o Package N • • • D • • • 1 2 3 4 8 7 6 5 1 2 3 4 5 6 7 8 - Offset Null 1 - Inverting input - Non-inverting input - VCC- Offset Null 2 - Output - VCC+ - N.C. October 1997 1/9 LF151 - LF251 - LF351 SCHEMATIC DIAGRAM VCC input Non-inverting Inveinput rting 100 Ω 200 Ω Output 100 Ω 30k 8.2k 1.3k VCC Offse t Null1 35k 1.3k 35k 100 Ω Offse t Null2 INPUT OFFSET VOLTAGE NULL CIRCUITS LF35 1 N1 N2 10 0kΩ VCC ABSOLUTE MAXIMUM RATINGS Symbol VCC Vi Vid Ptot Toper Supply Voltage - (note 1) Input Voltage - (note 3) Differential Input Voltage - (note 2) Power Dissipation Output Short-circuit Duration - (note 4) Operating Free Air Temperature Range LF351 LF251 LF151 Parameter Value ±18 ±15 ±30 680 Infinite 0 to 70 –40 to 105 –55 to 125 –65 to 150 o Unit V V V mW C Tstg Notes : Storage Temperature Range o C 1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC+ and VCC–. 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 2/9 LF151 - LF251 - LF351 ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage (R S = 10kΩ) o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Input Offset Voltage Drift Input Offset Current * Tamb = 25oC Tmin. ≤ Tamb ≤ Tmax. Input Bias Current * o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Large Signal Voltage Gain (RL = 2kΩ, VO = ±10V) o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Supply Voltage Rejection Ratio (R S = 10kΩ) o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Supply Current (no load) o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Input Common Mode Voltage Range Common Mode Rejection Ratio (RS = 10kΩ) o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Output Short-circuit Current o Tamb = 25 C Tmin. ≤ Tamb ≤ Tmax. Output Voltage Swing Tamb = 25oC Tmin. ≤ Tamb ≤ Tmax. SR tr KOV GBP Ri THD en ∅m RL RL RL RL = = = = 2k Ω 10kΩ 2k Ω 10kΩ ±11 50 25 80 80 LF151 - LF251 - LF351 Min. Typ. 3 10 5 100 4 200 20 Max. 10 13 µV/oC pA nA pA nA V/mV 200 dB 86 mA 1.4 +15 -12 86 mA 10 10 10 12 10 12 12 40 60 60 V 12 13.5 V/µs µs % 10 MHz 2.5 4 1012 0.01 15 45 nV  Hz √ Degrees Ω % 3.4 3.4 V dB 70 70 Unit mV DV io Iio Iib 20 Avd SVR ICC Vicm CMR Ios ±VOPP Slew Rate (Vi = 10V, R L = 2kΩ, C L = 100pF, T amb = 25oC, unity gain) Rise Time o (Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25 C, unity gain) Overshoot o (Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25 C, unity gain) Gain Bandwidth Product o (f = 100kHz, Tamb = 25 C, V in = 10mV, RL = 2kΩ, CL = 100pF) Input Resistance Total Harmonic Distortion (f = 1kHz, AV = 20dB, R L = 2kΩ, o CL = 100pF, Tamb = 25 C, VO = 2VPP) Equivalent Input Noise Voltage (f = 1kHz, Rs = 100Ω) Phase Margin 16 0.1 * The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature. 3/9 LF151 - LF251 - LF351 MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) 30 VCC = 15V 25 20 VCC = 10V 15 10 5 0 100 1K 10K 100K 1M 10M VCC = 5V R L= 2kΩ Tamb = +25 C See Figure 2 30 25 20 15 10 5 0 100 1K 10K 100K VCC = 5V V CC = 15V V CC = 10V R L= 10kΩ T amb = +25 C S e e F igure 2 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREE AIR TEMP. 30 MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) 30 25 20 Tamb = +25 C 25 20 15 VCC = 15V R L = 2kΩ Se e Figure 2 R 15 10 5 0 -75 -50 -25 0 25 50 L L = 10kΩ Ta mb = -55 C 10 5 0 R = 2kΩ V CC = 15V Ta mb = +125 C 10k 40k 100k 400k 1M 4M 10M S e e Figu re 2 75 -50 125 TEMPER ATURE ( C ) FREQUENCY (Hz) MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS LOAD RESISTANCE MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS SUPPLY VOLTAGE MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) 30 25 20 15 10 5 0 0.1 0.2 0.4 0.7 1 2 4 7 10 S e e Figu re 2 VCC= 15V Ta mb= +25 C 30 25 20 15 10 5 0 2 4 6 8 10 12 14 16 R L = 10 kΩ Ta mb = +25 C LOAD RESISTANCE (kΩ) S UPP LY VOLTAGE (V) 4/9 LF151 - LF251 - LF351 INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE INPUT BIAS CURRENT (nA) 1 00 DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 1000 VCC = 10 1 0 .1 1 5V 400 200 100 40 20 10 4 2 1 VCC = 15V VO = 10V R L = 2kΩ -75 -50 -25 0 25 50 75 100 125 0 .01 -50 -25 0 25 50 75 10 0 125 TEMPERATURE ( C ) TEMPERATURE ( C ) LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE TOTAL POWER DISSIPATION (mV) 100 P HASE S HIFT (right sca le) DIFFERENTIAL VOLTAGE AMPLIFICATION (le ft s ca le ) 180 10 1 100 R L = 2kΩ C L = 100pF V CC = 15V T a mb = +125 C 1K 10K 100K 1M 10M FREQUENCY (Hz) 90 0 250 225 V CC +/-15V 200 No s igna l No loa d 175 150 100 75 50 25 0 -75 -50 -25 0 DIFFERENTIAL VOLTAGE AMPLIFICATION(V/V) 25 50 75 100 125 TEMPERATURE ( C) SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -75 -50 SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 75 10 0 125 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) VCC = 15V No signa l No loa d Ta mb= +25 C No s igna l No load 2 4 6 8 10 12 14 16 TEMPERATURE ( C) SUPPLY VOLTAGE (V) 5/9 LF151 - LF251 - LF351 COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE COMMON MODE MODE REJECTION RATIO (dB) VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE INPUT AND OUTPUT VOLTAGES (V) 89 88 87 86 85 84 83 -75 -50 -25 0 25 50 75 100 125 R L = 10 kΩ VCC = 15V 6 4 2 0 -2 -4 -6 0 VCC = 15V R L = 2 kΩ C L= 100pF Ta mb = +25 C OUTPUT INPUT 0.5 1 1.5 2 2.5 3 3.5 TEMPERATURE ( C ) TIME (µs ) OUTPUT VOLTAGE VERSUS ELAPSED TIME 28 24 OVERSHOOT EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY EQUIVALENT INPUT NOISE VOLTAGE (nV/VHz) 70 60 50 40 30 20 10 0 10 40 100 400 1k 4k 10k 40k 100k FREQUENCY (Hz) VCC = 15V A V = 10 R S = 100 Ω Ta mb = +25 C OUTPUT VOLTAGE (mV) 20 16 12 8 4 0 -4 10% 90% tr 0 TIME (µs ) VCC= 15V R L= 2kΩ T mb = +25 C a 0.5 0.6 0.7 0.1 0.2 0.3 0.4 TOTAL HARMONIC DISTORTION VERSUS FREQUENCY TOTAL HARMONIC DISTORTION (%) 1 0.4 0.1 0.04 0.01 0.004 0.001 100 VV = = 15V 15V CC CC AAV = 1 V=1 VV(rms)= = 6V 6V O O (rms) +25 Ta mb = = +25CC Ta mb 400 1k 4k 10k 40k 100k FREQUE NCY (Hz) 6/9 LF151 - LF251 - LF351 PARAMETER MEASUREMENT INFORMATION Figure 1 : Voltage Follower Figure 2 : Gain-of-10 Inverting Amplifier 10k Ω LF351 eI 1k Ω LF351 eo eo Ρ L eI CL= 100pF RL = 2kΩ CL= 100pF TYPICAL APPLICATION (0.5Hz) SQUARE WAVE OSCILLATOR R F = 100k Ω 3.3k Ω - +15V LF351 1k Ω C F = 3.3 µF -15V 3.3k Ω 9.1k Ω f osc = 1 2 x R F CF HIGH Q NOTCH FILTER LF351 R1 R2 C3 R3 fo = 1 = 1kHz 2 x R C1 1 C3 C1 = C2 = = 100pF 2 R1 = R2 = 2R3 = 1.5MΩ C1 C2 7/9 LF151 - LF251 - LF351 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dimensions A a1 B b b1 D E e e3 e4 F i L Z Min. 0.51 1.15 0.356 0.204 7.95 Millimeters Typ. 3.32 Max. Min. 0.020 0.045 0.014 0.008 0.313 Inches Typ. 0.131 Max. 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 3.18 0.125 8/9 DIP8.TBL PM-DIP8.EPS LF151 - LF251 - LF351 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dimensions A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 Millimeters Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 o Min. 0.004 0.026 0.014 0.007 0.010 0.189 0.228 Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) o 0.050 0.150 0.150 0.016 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publ ication are subject to change without notice. This pub lication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ORDER CODE : © 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdo m - U.S.A. 9/9 SO8.TBL PM-SO8.EPS