LIS2L02AS

LIS2L02AS INERTIAL SENSOR: 2Axis - 2g/6g LINEAR ACCELEROMETER PRODUCT PREVIEW s s s s s s 3V TO 5.25V SINGLE SUPPLY OPERATION THE SENSITIVITY IS ADJUSTED WITH A TOTAL ACCURACY OF ±10% THE OUTPUT VOLTAGE, OFFSET, SENSITIVITY AND TEST VOLTAGE ARE RATIOMETRIC TO THE SUPPLY VOLTAGE DEVICE SENSITIVITY IS ON-CHIP FACTORY TRIMMED EMBEDDED SELF TEST HIGH SHOCK SURVIVABILITY SO-24 ORDERING NUMBER: LIS2L02AS DESCRIPTION The LIS2L02AS is a dual-axis linear accelerometer that includes a sensing element and an IC interface able to take the information from the sensing element and to provide an analog signal to the external world. The sensing element, capable to detect the acceleration, is manufactured using a dedicated process called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuators in silicon. The IC interface instead is manufactured using a CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to better match the sensing element characteristics. The LIS2L02AS has a user selectable full scale of 2g, 6g and it is capable of measuring accelerations over BLOCK DIAGRAM a maximum bandwidth of 4.0 KHz for both the X and Y axis. The device bandwidth may be reduced by using external capacitances. A self-test capability allows the user to check the functioning of the system. The LIS2L02AS is available in plastic SMD package and it is specified over a temperature range extending from -40°C to +85°C. The LIS2L02AS belongs to a family of products suitable for a variety of applications: – Antitheft systems – Inertial navigation – Virtual reality input devices – Vibration Monitoring, recording and compensation – Appliance control – Robotics Routx S1X S1Y CHARGE AMPLIFIER S/H Voutx rot S2Y S2X MUX DEMUX Routy S/H Vouty VOLTAGE & CURRENT R EFERENCE TRIMMING CIRCUIT & TEST INTERFACE CLOCK & PHASE GENERATOR December 2002 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/6 LIS2L02AS PIN DESCRIPTION N° 1 to 6 7 8 9 10-11 12 13 14 15 16 17 18 19 20 to 24 Pin NC Reserved Reserved Reserved Reserved FS NC PD Voutx ST Vouty Vdd GND NC Internally not connected Leave unconnected or connect to ground Leave unconnected or connect to Vdd Connect to Vdd or ground Leave unconnected or connect to Vdd Full Scale selection (Logic 0: 2g Full-scale; Logic 1: 6g Full-scale) Internally not connected Power Down (Logic 0: normal mode; Logic 1: Power-Down mode) Output Voltage Self Test (Logic 0: normal mode; Logic 1: Self-test) Output Voltage Power supply 0V supply Internally not connected Function PIN CONNECTION (Top view) NC X 1 Y NC NC NC NC NC GND Vdd Vouty ST Voutx PD NC NC NC NC NC 13 NC Reserved DIRECTION OF THE DETECTABLE ACCELERATIONS Reserved Reserved Reserved Reserved FS 2/6 LIS2L02AS ELECTRICAL CHARACTERISTCS (Temperature range -40°C to +85°C) Symbol Vdd Idd Voff Ar Parameter Supply voltage Supply current Zero-g level Acceleration range Tamb = 25°C ratiometric to Vdd 0V on FS pin Vdd on FS pin So Sensitivity ratiometric to Vdd Tamb = 25°C Full-scale = 2g Tamb = 25°C Full-scale = 6g NL Non Linearity Best fit straight line X, Y axis Full-scale = 2g X, Y axis Vdd = 5V Full-scale = 2g Tamb = 25°C @ 5V Logic 0 level Logic 1 level Rout Cload Output impedance Capacitive load drive 320 100 0 2.8 100 0.8 Vdd Vdd/5–10% Vdd/15–10% Vdd/2-10% ±1.8 Test Condition Min. 3 1.0 Vdd/2 ±2.0 ±±6.0 Vdd/5 Vdd/15 ±0.3 Vdd/5+10% Vdd/15+10% Vdd/2+10% ±2.2 Typ. Max. 5.25 Unit V mA V g g V/g V/g % fuc an Vt Vst Sensing Element Resonant Frequency Acceleration noise density Self test output voltage Ratiometric to Vdd Self test input 4.0 50 KHz µg/ Hz mV V V kΩ pF 1 FUNCTIONALITY 1.1 Sensing element The THELMA process is utilized to create a surface micro-machined accelerometer. The technology allows to carry out suspended silicon structures which are attached to the substrate in a few points called anchors and free to move on a plane parallel to the substrate itself. To be compatible with the traditional packaging techniques a cap is placed on top of the sensing element to avoid blocking the moving parts during the molding phase. The equivalent circuit for the sensing element is shown in the below figure; when a linear acceleration is applied, the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the sense capacitor. The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum variation of the capacitive load is few tenth of pF. 3/6 LIS2L02AS Figure 1. Equivalent electrical circuit Cps1 Rs1 S1x Cs1x Cpr Rr Cs2x S2x Cps2 Cps1 Rs2 Rs1 S1y Cs1y Cpr Rr rot Cs2y S2y Cps2 Rs2 1.2 IC Interface The complete signal processing uses a fully differential structure, while the final stage converts the differential signal into a single-ended one to be compatible with the external world. The first stage is a low-noise capacitive amplifier that implements a Correlated Double Sampling (CDS) at its output to cancel the offset and the 1/f noise. The produced signal is then sent to two different S&Hs, one for each channel, and made available to the outside. The low noise input amplifier operates at 200 kHz while the two S&Hs operate at a sampling frequency of 66 kHz. This allows a large oversampling ratio, which leads to in-band noise reduction and to an accurate output waveform. All the analog parameters (output offset voltage and sensitivity) are ratiometric to the voltage supply. Increasing or decreasing the voltage supply, the sensitivity and the offset will increase or decrease linearly. The feature provides the cancellation of the error related to the voltage supply along an analog to digital conversion chain. 1.3 Factory calibration The IC interface is factory calibrated to provide to the final user a device ready to operate. The parameters which are trimmed are: gain, offset, common mode and internal clock frequency. The trimming values are stored inside the device by a poly-fuse structure. Any time the device is turned on, the memorized bits are downloaded into the registers to be employed during the normal operation. The poly-fuse approach allows the final user to utilize the device without any need for further calibration 4/6 LIS2L02AS mm DIM. MIN. A A1 B C D (1) E e H h L k ddd 10.0 0.25 0.40 2.35 0.10 0.33 0.23 15.20 7.40 1.27 10.65 0;75 1.27 0.394 0.010 0.016 TYP. MAX. 2.65 0.30 0.51 0.32 15.60 7.60 MIN. 0.093 0.004 0.013 0.009 0.598 0.291 inch TYP. MAX. 0.104 0.012 0.200 0.013 0.614 0.299 0.050 0.419 0.030 0.050 Weight: 0.60gr OUTLINE AND MECHANICAL DATA 0˚ (min.), 8˚ (max.) 0.10 0.004 (1) “D” dimension does not include mold flash, protusions or gate burrs. Mold flash, protusions or gate burrs shall not exceed 0.15mm per side. SO24 0070769 C 5/6 LIS2L02AS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 ®