M24256-BW M24256-BR M24256-BF
M24256-DR M24256-DF
Datasheet
256-Kbit serial I²C bus EEPROM
Features
•
SO8N (MN)
TSSOP8 (DW)
150 mil width
169 mil width
•
•
UFDFPN8 (MC)
DFN8 - 2x3 mm
•
•
WLSCP (CS)
WLSCP (CU)
Unsawn wafer
Product status link
M24256-BF
M24256-DF
M24256-BR
M24256-DR
M24256-BW
•
•
•
•
•
Compatible with following I2C bus modes:
–
1 MHz
–
400 kHz
–
100 kHz
Memory array:
–
256 Kbit (32 Kbyte) of EEPROM
–
Page size: 64 byte
–
Additional write lockable page (M24256-D order codes)
Single supply voltage and high speed:
–
1 MHz clock from 1.7 V to 5.5 V
Write:
–
Byte write within 5 ms
–
Page write within 5 ms
Operating temperature range:
–
from -40 °C up to +85 °C
Random and sequential read modes
Write protect of the whole memory array
Enhanced ESD/latch-Up protection
More than 4 million write cycles
More than 200-years data retention
Packages
•
•
•
•
•
•
RoHS-compliant and Halogen-free (ECOPACK2)
SO8 ECOPACK2
TSSOP8 ECOPACK2
UFDFPN8 ECOPACK2
WLCSP ECOPACK2
Unsawn wafer (each die is tested)
DS1766 - Rev 35 - November 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Description
1
Description
The M24256 is a 256-Kbit I2C-compatible EEPROM (electrically erasable programmable memory) organized as
32 K × 8 bits.
The M24256-BW can operate with a supply voltage from 2.5 V to 5.5 V, the M24256-BR AND M24256-DR can
operate with a supply voltage from 1.8 V to 5.5 V, and the M24256-BF and M24256-DF can operate with a supply
voltage from 1.7 V to 5.5 V. All these devices operate with a clock frequency of 1 MHz (or less), over an ambient
temperature range of –40 °C / +85 °C. The M24256-D offers an additional page, named the identification page
(64 byte). The identification page can be used to store sensitive application parameters which can be (later)
permanently locked in read-only mode.
Figure 1. Logic diagram
VCC
3
E0-E2
SDA
M24xxx
SCL
WC
VSS
Table 1. Signal names
Signal name
Function
Direction
E2, E1, E0
Chip enable
Input
SDA
Serial data
I/O
SCL
Serial clock
Input
WC
Write control
Input
VCC
Supply voltage
-
VSS
Ground
-
Figure 2. 8-pin package connections, top view
1.
DS1766 - Rev 35
E0
1
8
VCC
E1
2
7
WC
E2
3
6
SCL
VSS
4
5
SDA
See Section 9 Package information for package dimensions, and how to identify pin 1
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Description
Figure 3. WLCSP connections
1
A
2
WC
E1
E1
2
A
WC
VSS
SDA
B
VCC
C
SDA
E2
SCL
1
E0
VSS
VCC
D
E
3
E0
B
C
3
E2
Marking side
(top view)
D
SCL
E
Bump side
(bottom view)
Table 2. Signal vs. bump position
DS1766 - Rev 35
Position
A
B
C
D
E
1
WC
-
VCC
-
SCL
2
-
E0
-
SDA
-
3
E1
-
VSS
-
E2
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Signal description
2
Signal description
2.1
Serial clock (SCL)
The signal applied on the SCL input is used to strobe the data available on SDA(in) and to output the data on
SDA(out).
2.2
Serial data (SDA)
SDA is an input/output used to transfer data in or data out of the device. SDA(out) is an open drain output
that may be wire-OR’ed with other open drain or open collector signals on the bus. A pull-up resistor must be
connected from serial data (SDA) to VCC (Figure 12 indicates how to calculate the value of the pull-up resistor).
2.3
Chip enable (E2, E1, E0)
(E2,E1,E0) input signals are used to set the value that is to be looked for on the three least significant bits (b3, b2,
b1) of the 7-bit device select code (see Table 3). These inputs must be tied to VCC or VSS, as shown in Figure 4.
When not connected (left floating), these inputs are read as low (0).
Figure 4. Chip enable inputs connection
VCC
VCC
M24xxx
M24xxx
Ei
Ei
VSS
2.4
VSS
Write control (WC)
This input signal is useful for protecting the entire contents of the memory from inadvertent write operations. Write
operations are disabled to the entire memory array when write control (WC) is driven high. Write operations are
enabled when write control (WC) is either driven low or left floating.
When write control (WC) is driven high, device select and address bytes are acknowledged, data bytes are not
acknowledged.
2.5
VSS (ground)
VSS is the reference for the VCC supply voltage.
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Supply voltage (VCC)
2.6
Supply voltage (VCC)
2.6.1
Operating supply voltage (VCC)
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified
[VCC(min), VCC(max)] range must be applied (see Operating conditions in Section 8 DC and AC parameters). In
order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor
(usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins.
This voltage must remain stable and valid until the end of the transmission of the instruction and, for a write
instruction, until the completion of the internal write cycle (tW).
2.6.2
Power-up conditions
The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage (see Operating
conditions in Section 8 DC and AC parameters).
2.6.3
Device reset
In order to prevent inadvertent write operations during power-up, a power-on-reset (POR) circuit is included.
At power-up, the device does not respond to any instruction until VCC has reached the internal reset
threshold voltage. This threshold is lower than the minimum VCC operating voltage (see Operating conditions
in Section 8 DC and AC parameters). When VCC passes over the POR threshold, the device is reset and enters
the standby power mode; however, the device must not be accessed until VCC reaches a valid and stable DC
voltage within the specified [VCC(min), VCC(max)] range (see Operating conditions in Section 8 DC and AC
parameters).
In a similar way, during power-down (continuous decrease in VCC), the device must not be accessed when VCC
drops below VCC(min). When VCC drops below the power-on-reset threshold voltage, the device stops responding
to any instruction sent to it.
2.6.4
Power-down conditions
During power-down (continuous decrease in VCC), the device must be in the standby power mode (mode reached
after decoding a stop condition, assuming that there is no internal write cycle in progress).
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Memory organization
3
Memory organization
The memory is organized as shown below.
Figure 5. Block diagram
SENSE AMPLIFIERS
PAGE LATCHES
ARRAY
SCL
I/O
X DECODER
Y DECODER
DATA REGISTER
+
ECC
SDA
WC
START & STOP
DETECT
Ei
CONTROL
LOGIC
IDENTIFICATION PAGE
HV GENERATOR
+
SEQUENCER
ADDRESS
REGISTER
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Device operation
4
Device operation
The device supports the I2C protocol. This is summarized in Figure 6. Any device that sends data on to the bus
is defined to be a transmitter, and any device that reads the data to be a receiver. The device that controls the
data transfer is known as the bus master, and the other as the slave device. A data transfer can only be initiated
by the bus master, which will also provide the serial clock for synchronization. The device is always a slave in all
communications.
Figure 6. I2C bus protocol
SCL
SDA
SDA
Input
START
Condition
SCL
1
SDA
MSB
2
SDA
Change
STOP
Condition
3
7
8
9
ACK
START
Condition
SCL
1
SDA
MSB
2
3
7
8
9
ACK
STOP
Condition
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Start condition
4.1
Start condition
Start is identified by a falling edge of serial data (SDA) while serial clock (SCL) is stable in the high state. A start
condition must precede any data transfer instruction. The device continuously monitors (except during a write
cycle) serial data (SDA) and serial clock (SCL) for a start condition.
4.2
Stop condition
Stop is identified by a rising edge of serial data (SDA) while serial clock (SCL) is stable and driven high. A stop
condition terminates communication between the device and the bus master. A read instruction that is followed by
NoAck can be followed by a stop condition to force the device into the standby mode.
A stop condition at the end of a write instruction triggers the internal write cycle.
4.3
Data input
During data input, the device samples serial data (SDA) on the rising edge of serial clock (SCL). For correct
device operation, serial data (SDA) must be stable during the rising edge of serial clock (SCL), and the serial data
(SDA) signal must change only when serial clock (SCL) is driven low.
4.4
Acknowledge bit (ACK)
The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter, whether it be bus master
or slave device, releases serial data (SDA) after sending eight bits of data. During the 9th clock pulse period, the
receiver pulls serial data (SDA) low to acknowledge the receipt of the eight data bits.
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Device addressing
4.5
Device addressing
To start communication between the bus master and the slave device, the bus master must initiate a Start
condition. Following this, the bus master sends the device select code, shown in Table 3 (most significant bit first).
Table 3. Device select code
Device type identifier(1)
Chip Enable address(2)
RW
b7
b6
b5
b4
b3
b2
b1
b0
Device select code when addressing the memory array
1
0
1
0
E2
E1
E0
RW
Device select code when accessing the Identification page
1
0
1
1
E2
E1
E0
RW
1. The most significant bit, b7, is sent first.
2. E0, E1 and E2 are compared with the value read on input pins E0, E1 and E2.
When the device select code is received, the device only responds if the chip enable address is the same as the
value on the chip enable (E2, E1, E0) inputs.
The 8th bit is the Read/Write bit (RW). This bit is set to 1 for read and 0 for write operations.
If a match occurs on the device select code, the corresponding device gives an acknowledgement on serial data
(SDA) during the 9th bit time. If the device does not match the device select code, it deselects itself from the bus,
and goes into standby mode.
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Instructions
5
Instructions
5.1
Write operations
Following a start condition the bus master sends a device select code with the R/W bit (RW) reset to 0. The
device acknowledges this, as shown in Figure 7, and waits for two address bytes. The device responds to each
address byte with an acknowledge bit, and then waits for the data byte.
Table 4. Most significant address byte
A15
A14
A13
A12
A11
A10
A9
A8
Table 5. Least significant address byte
A7
A6
A5
A4
A3
A2
A1
A0
When the bus master generates a stop condition immediately after a data byte Ack bit (in the “10th bit” time slot),
either at the end of a byte write or a page write, the internal write cycle tW is triggered. A stop condition at any
other time slot does not trigger the internal write cycle.
After the stop condition and the successful completion of an internal write cycle (tW), the device internal address
counter is automatically incremented to point to the next byte after the last modified byte.
During the internal write cycle, serial data (SDA) is disabled internally, and the device does not respond to any
requests.
If the write control input (WC) is driven high, the write instruction is not executed and the accompanying data
bytes are not acknowledged, as shown in Figure 8.
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Write operations
5.1.1
Byte write
After the device select code and the address bytes, the bus master sends one data byte. If the addressed location
is write-protected, by write control (WC) being driven high, the device replies with NoAck, and the location is not
modified. If, instead, the addressed location is not write-protected, the device replies with Ack. The bus master
terminates the transfer by generating a stop condition, as shown in Figure 7.
Figure 7. Write mode sequences with WC = 0 (data write enabled)
WC
ACK
Byte addr
ACK
ACK
Data in
Byte addr
Stop
Dev sel
Start
Byte Write
ACK
RW
WC
ACK
Dev sel
Start
Page Write
ACK
Byte addr
ACK
Byte addr
ACK
Data in 1
Data in 2
RW
WC (cont’d)
ACK
Data in N
Stop
Page Write (cont’d)
ACK
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Write operations
5.1.2
Page write
The page write mode allows up to 64 byte to be written in a single write cycle, provided that they are all located
in the same page in the memory: that is, the most significant memory address bits, A15/A6, are the same. If more
bytes are sent than will fit up to the end of the page, a “roll-over” occurs, i.e. the bytes exceeding the page end
are written on the same page, from location 0.
The bus master sends from 1 to 64 byte of data, each of which is acknowledged by the device if write control
(WC) is low. If write control (WC) is high, the contents of the addressed memory location are not modified, and
each data byte is followed by a NoAck, as shown in Figure 8. After each transferred byte, the internal page
address counter is incremented.
The transfer is terminated by the bus master generating a stop condition.
Figure 8. Write mode sequences with WC = 1 (data write inhibited)
WC
Byte write
WC
Page write
WC (cont’d)
Page write (cont’d)
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Write operations
5.1.3
Write identification page (M24256-D only)
The identification page (64 byte) is an additional page which can be written and (later) permanently locked in
read-only mode. It is written by issuing the write identification page instruction. This instruction uses the same
protocol and format as page write (into memory array), except for the following differences:
•
Device type identifier = 1011b
•
MSB address bits A15/A6 are don't care except for address bit A10 which must be ‘0’. LSB address bits
A5/A0 define the byte address inside the Identification page.
If the identification page is locked, the data bytes transferred during the write identification page instruction are not
acknowledged (NoAck).
5.1.4
Lock identification page (M24256-D only)
The lock identification page instruction (Lock ID) permanently locks the identification page in read-only mode. The
lock ID instruction is similar to byte write (into memory array) with the following specific conditions:
•
Device type identifier = 1011b
•
Address bit A10 must be ‘1’; all other address bits are don't care
•
The data byte must be equal to the binary value xxxx xx1x, where x is don't care
5.1.5
ECC (error correction code) and write cycling
The error correction code (ECC) is an internal logic function which is transparent for the I2C communication
protocol.
The ECC logic is implemented on each group of four EEPROM bytes (A group of four bytes is located at
addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where N is an integer). Inside a group, if a single bit out of the four bytes
happens to be erroneous during a read operation, the ECC detects this bit and replaces it with the correct value.
The read reliability is therefore much improved.
Even if the ECC function is performed on groups of four bytes, a single byte can be written/cycled independently.
In this case, the ECC function also writes/cycles the three other bytes located in the same group (A group of
four bytes is located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where N is an integer). As a consequence, the
maximum cycling budget is defined at group level and the cycling can be distributed over the 4 bytes of the group:
the sum of the cycles seen by byte0, byte1, byte2 and byte3 of the same group must remain below the maximum
value defined Table 11.
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Write operations
5.1.6
Minimizing write delays by polling on ACK
The maximum write time (tw) is shown in AC characteristics tables in Section 8 , but the typical time is shorter. To
make use of this, a polling sequence can be used by the bus master.
The sequence, as shown in Figure 9, is:
•
Initial condition: a write cycle is in progress.
•
Step 1: the bus master issues a Start condition followed by a device select code (the first byte of the new
instruction).
•
Step 2: if the device is busy with the internal write cycle, no Ack is returned and the bus master goes back
to step 1. If the device has terminated the internal write cycle, it responds with an Ack, indicating that the
device is ready to receive the second part of the instruction (the first byte of this instruction having been sent
during Step 1).
Figure 9. Write cycle polling flowchart using ACK
Write cycle
in progress
Start condition
Device select
with RW = 0
NO
ACK
returned
YES
First byte of instruction
with RW = 0 already
decoded by the device
NO
Next
operation is
addressing the
memory
YES
Send address
and receive ACK
Re-start
Stop
1.
DS1766 - Rev 35
NO
StartCondition
YES
Data for the
write operation
Device select
with RW = 1
Continue the
write operation
Continue the
random read operation
The seven most significant bits of the device select code of a random read (bottom right box in the figure)
must be identical to the seven most significant bits of the device select code of the write (polling instruction
in the figure).
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Read operations
5.2
Read operations
Read operations are performed independently of the state of the write control (WC) signal.
After the successful completion of a read operation, the device internal address counter is incremented by one, to
point to the next byte address.
For the read instructions, after each byte read (data out), the device waits for an acknowledgement (data in)
during the 9th bit time. If the bus master does not acknowledge during this 9th time, the device terminates the data
transfer and switches to its standby mode.
Figure 10. Read mode sequences
ACK
Data out
Stop
Start
Dev sel
NO ACK
RW
ACK
Random
Address
Read
Byte addr
Dev sel *
ACK
ACK
Data out 1
ACK
NO ACK
Data out N
ACK
Byte addr
ACK
Byte addr
RW
ACK
Dev sel *
Start
Dev sel *
Start
Data out
RW
RW
ACK
NO ACK
Stop
Start
Dev sel
Sequential
Random
Read
ACK
Byte addr
RW
ACK
Sequential
Current
Read
ACK
Start
Start
Dev sel *
ACK
Stop
Current
Address
Read
ACK
Data out1
RW
NO ACK
Stop
Data out N
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Read identification page (M24256-D only)
5.2.1
Random address read
A dummy write is first performed to load the address into this address counter (as shown in Figure 10) but without
sending a stop condition. Then, the bus master sends another start condition, and repeats the device select code,
with the RW bit set to 1. The device acknowledges this, and outputs the contents of the addressed byte. The bus
master must not acknowledge the byte, and terminates the transfer with a stop condition.
5.2.2
Current address read
For the current address read operation, following a start condition, the bus master only sends a device select
code with the R/W bit set to 1. The device acknowledges this, and outputs the byte addressed by the internal
address counter. The counter is then incremented. The bus master terminates the transfer with a stop condition,
as shown in Figure 10, without acknowledging the byte.
Note that the address counter value is defined by instructions accessing either the memory or the identification
page. When accessing the Identification page, the address counter value is loaded with the byte location in the
identification page, therefore the next current address read in the memory uses this new address counter value.
When accessing the memory, it is safer to always use the random address read instruction (this instruction loads
the address counter with the byte location to read in the memory, see Section 5.2.1 Random address read)
instead of the current address Read instruction.
5.2.3
Sequential read
This operation can be used after a current address read or a random address read. The bus master does
acknowledge the data byte output, and sends additional clock pulses so that the device continues to output the
next byte in sequence. To terminate the stream of bytes, the bus master must not acknowledge the last byte, and
must generate a Stop condition, as shown in Figure 10.
The output data comes from consecutive addresses, with the internal address counter automatically incremented
after each byte output. After the last memory address, the address counter “rolls-over”, and the device continues
to output data from memory address 00h.
5.3
Read identification page (M24256-D only)
The identification page (64 bytes) is an additional page which can be written and (later) permanently locked in
Read-only mode.
The identification page can be read by issuing an read identification page instruction. This instruction uses the
same protocol and format as the random address read (from memory array) with device type identifier defined as
1011b. The MSB address bits A15/A6 are don't care, the LSB address bits A5/A0 define the byte address inside
the identification page. The number of bytes to read in the ID page must not exceed the page boundary (e.g.:
when reading the identification page from location 10d, the number of bytes should be less than or equal to 54, as
the ID page boundary is 64 bytes).
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Read the lock status (M24256-D only)
5.4
Read the lock status (M24256-D only)
The locked/unlocked status of the identification page can be checked by transmitting a specific truncated
command [identification page write instruction + one data byte] to the device. The device returns an acknowledge
bit if the identification page is unlocked, otherwise a NoAck bit if the identification page is locked.
Right after this, it is recommended to transmit to the device a start condition followed by a stop condition, so that:
•
Start: the truncated command is not executed because the start condition resets the device internal logic,
•
Stop: the device is then set back into standby mode by the stop condition.
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Initial delivery state
6
Initial delivery state
The device is delivered with all the memory array bits and Identification page bits set to 1 (each byte contains
FFh).
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Maximum rating
7
Maximum rating
Stressing the device outside the ratings listed in Table 6 may cause permanent damage to the device. These
are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in
the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6. Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
-
Ambient operating temperature
-40
130
°C
TSTG
Storage temperature
–65
150
°C
TLEAD
Lead temperature during soldering
IOL
DC output current (SDA = 0)
–
5
mA
VIO
Input or output range
–0.50
6.5
V
VCC
Supply voltage
-0.50
6.5
V
VESD
Electrostatic pulse (Human Body model)(2)
–
4000
V
see note (1)
°C
1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb-free assembly), the ST ECOPACK 7191395
specification, and the European directive on Restrictions of Hazardous Substances (RoHS directive 2011/65/EU of July
2011).
2. Positive and negative pulses applied on different combinations of pin connections, according to AEC-Q100-002 (compliant
with ANSI/ESDA/JEDEC JS-001-2012 standard, C1=100 pF, R1=1500 Ω).
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DC and AC parameters
8
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the
device.
Table 7. Operating conditions (voltage range W)
Symbol
Min.
Max.
Unit
Supply voltage
2.5
5.5
V
TA
Ambient operating temperature
–40
85
°C
fC
Operating clock frequency
-
1
MHz
Min.
Max.
Unit
Supply voltage
1.8
5.5
V
TA
Ambient operating temperature
–40
85
°C
fC
Operating clock frequency
-
1
MHz
Min.
Max.
Unit
Supply voltage
1.7
5.5
V
TA
Ambient operating temperature
-40
85
°C
fC
Operating clock frequency
-
1
MHz
VCC
Parameter
Table 8. Operating conditions (voltage range R)
Symbol
VCC
Parameter
Table 9. Operating conditions (voltage range F)
Symbol
VCC
Parameter
Table 10. AC measurement conditions
Symbol
Min.
Max.
Unit
Load capacitance
-
100
pF
-
SCL input rise/fall time, SDA input fall time
-
50
ns
-
Input levels
0.2 VCC to 0.8 VCC
V
-
Input and output timing reference levels
0.3 VCC to 0.7 VCC
V
Cbus
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Parameter
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DC and AC parameters
Figure 11. AC measurement I/O waveform
Input voltage levels
Input and output
Timing reference levels
0.8VCC
0.7VCC
0.3V CC
0.2VCC
Table 11. Input parameters
Parameter(1)
Symbol
Test condition
Min.
Max.
Unit
CIN
Input capacitance (SDA)
-
-
8
pF
CIN
Input capacitance (other pins)
-
-
6
pF
VIN < 0.3 VCC
30
-
kΩ
VIN > 0.7 VCC
500
-
kΩ
ZL
ZH
Input impedance (E2, E1, E0, WC)(2)
1. Characterized only, not tested in production.
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
Table 12. Cycling performance by groups of four bytes
Symbol
Ncycle
Parameter
Write cycle endurance(1)
Test condition
Max.
TA ≤ 25 °C, VCC(min) < VCC < VCC(max)
4,000,000
TA = 85 °C, VCC(min) < VCC < VCC(max)
1,200,000
Unit
Write cycle(2)
1. The write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality
(see ECC (error correction code) and write cycling), the write cycle endurance is defined for group of four bytes located at
addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer.
2. A Write cycle is executed when either a page write, a byte write, a write identification page or a lock identification
page instruction is decoded. When using the byte write, the page write or the write identification page, refer also to
Section 5.1.5 ECC (error correction code) and write cycling
Table 13. Memory cell data retention
Parameter
Data
retention(1)
Test condition
TA = 55 °C
Min.
Unit
200
Year
1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from
characterization and qualification results.
DS1766 - Rev 35
page 21/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 14. DC characteristics (M24256-BW, device grade 6)
Symbol
ILI
ILO
Parameter
Input leakage current
(SCL, SDA, E2, E1, E0)
Output leakage current
Test conditions (in addition to those in Table 7)
Min.
Max.
Unit
VIN = VSS or VCC, device in Standby mode
-
±2
µA
SDA in Hi-Z, external voltage applied on SDA: VSS or VCC
-
±2
µA
-
1
-
2
-
2.5
-
2(1)
mA
-
2
μA
-
3
μA
-
–0.45
0.3 VCC
V
-
0.7 VCC
6.5
V
-
0.7 VCC VCC+0.6
VCC = 2.5 V, fC = 400 kHz
(rise/fall time < 50 ns)
ICC
Supply current (Read)
VCC = 5.5 V, fC = 400 kHz
(rise/fall time < 50 ns)
2.5 V ≤VCC ≤ 5.5 V, fC = 1 MHz
(rise/fall time < 50 ns)
ICC0
Supply current (Write)
During tW,
2.5 V ≤ VCC ≤ 5.5 V
Device not selected(2),
ICC1
Standby supply current
VIN = VSS or VCC, VCC = 2.5 V
Device not selected(2),
VIN = VSS or VCC, VCC = 5.5 V
VIL
Input low voltage(3)
(SCL, SDA, WC, E2, E1, E0)
Input high voltage
VIH
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)(4)
VOL
Output low voltage
IOL = 2.1 mA, VCC = 2.5 V or
IOL = 3 mA, VCC = 5.5 V
-
mA
0.4
V
V
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a read instruction (after the stop condition), or after the completion of the
internal write cycle tW (tW is triggered by the correct decoding of a write instruction).
3. Ei inputs should be tied to Vss (see Section 2.3 Chip enable (E2, E1, E0)).
4. Ei inputs should be tied to Vcc (see Section 2.3 Chip enable (E2, E1, E0)).
DS1766 - Rev 35
page 22/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 15. DC characteristics (M24256-BR, M24256-DR device grade 6)
Symbol
ILI
Parameter
Input leakage current
( E0, E1, E2, SCL, SDA)
ILO
Output leakage current
ICC
Supply current (Read)
ICC0
Supply current (Write)
ICC1
Standby supply current
VIL
Input low voltage (SCL, SDA,
WC,E2, E1, E0)(4)
Input high voltage
VIH
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0(5))
VOL
Output low voltage
Test conditions (1)(in addition to those in Table 8)
Min.
Max.
Unit
VIN = VSS or VCC, device in Standby mode
-
±2
µA
SDA in Hi-Z, external voltage applied on SDA: VSS or
VCC
-
±2
µA
VCC = 1.8 V, fc= 400 kHz
-
0.8
mA
fc= 1 MHz
-
2.5
mA
-
2(2)
mA
-
1
µA
1.8 V ≤ VCC < 2.5 V
-0.45
0.25 VCC
V
1.8 V ≤ VCC < 2.5 V
0.75 VCC
6.5
V
1.8 V ≤ VCC < 2.5 V
0.75 VCC VCC+0.6
During tW
1.8 V ≤ VCC ≤ 2.5 V
Device not selected,(3)
VIN = VSS or VCC, VCC = 1.8 V
IOL = 1 mA, VCC = 1.8 V
-
0.2
V
V
1. If the application uses the voltage range R device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C, please refer to
Table 14 instead of this table.
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a read instruction (after the stop condition), or after the completion of the
internal write cycle tW (tW is triggered by the correct decoding of a write instruction).
4. Ei inputs should be tied to VSS (see Section 2.3 Chip enable (E2, E1, E0)).
5. Ei inputs should be tied to VCC (see Section 2.3 Chip enable (E2, E1, E0)).
DS1766 - Rev 35
page 23/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 16. DC characteristics (M24256-BF, M24256-DF, device grade 6)
Symbol
Parameter
Test conditions(1) (in addition to those in Table 9)
Min.
Max.
Unit
-
±2
µA
µA
Input leakage current
VIN = VSS or VCC
(E0, E1, E2, SCL, SDA)
device in Standby mode
ILO
Output leakage current
SDA in Hi-Z, external voltage applied on SDA: VSS or
VCC
-
±2
ICC
Supply current (Read)
VCC = 1.7 V, fc= 400 kHz
-
0.8
fc= 1 MHz
-
2.5
ICC0
Supply current (Write)
-
2(2)
mA
ICC1
Standby supply current
-
1
µA
VIL
Input low voltage (SCL, SDA,
WC,E2, E1, E0)(4)
1.7 V ≤ VCC < 2.5 V
-0.45
0.25 VCC
V
1.7 V ≤ VCC < 2.5 V
0.75 VCC
6.5
V
1.7 V ≤ VCC < 2.5 V
0.75 VCC VCC+0.6
ILI
Input high voltage
VIH
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)(5)
VOL
Output low voltage
During tW
1.7 V < VCC < 2.5 V
Device not selected,(3)
VIN = VSS or VCC, VCC = 1.7 V
IOL = 1 mA, VCC = 1.7 V
-
mA
0.2
V
V
1. If the application uses the voltage range F device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C, please refer to
Table 14 instead of this table.
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a read instruction (after the stop condition), or after the completion of the
internal write cycle tW (tW is triggered by the correct decoding of a write instruction).
4. Ei inputs should be tied to VSS (see Section 2.3 Chip enable (E2, E1, E0)).
5. Ei inputs should be tied to VCC (see Section 2.3 Chip enable (E2, E1, E0)).
DS1766 - Rev 35
page 24/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 17. 400 kHz AC characteristics
Symbol
Alt.
Parameter
Min.
Max.
Unit
fC
fSCL
Clock frequency
-
400
kHz
tCHCL
tHIGH
Clock pulse width high
600
-
ns
tCLCH
tLOW
Clock pulse width low
1300
-
ns
tQL1QL2(1)
tF
SDA (out) fall time
20(2)
300
ns
tXH1XH2
tR
Input signal rise time
(3)
(3)
ns
tXL1XL2
tF
Input signal fall time
(3)
(3)
ns
tDXCH
tSU:DAT
Data in set up time
100
-
ns
tCLDX
tHD:DAT
Data in hold time
0
-
ns
100
-
ns
-
900
ns
tCLQX
(4)
tDH
Data out hold time
tCLQV(5)
tAA
Clock low to next data valid (access time)
tCHDL
tSU:STA
Start condition setup time
600
-
ns
tDLCL
tHD:STA
Start condition hold time
600
-
ns
tCHDH
tSU:STO
Stop condition set up time
600
-
ns
tDHDL
tBUF
Time between Stop condition and next Start condition
1300
-
ns
(1)(6)
tSU:WC
WC set up time (before the Start condition)
0
-
µs
tDHWH(1)(7)
tHD:WC
WC hold time (after the Stop condition)
1
-
µs
tW
tWR
Internal Write cycle duration
-
5
ms
tNS(1)
-
Pulse width ignored (input filter on SCL and SDA) - single glitch
-
80
ns
tWLDL
1. Characterized only, not tested in production.
2. With CL = 10 pF.
3. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the I²C specification
that the input signal rise and fall times be more than 20 ns and less than 300 ns when fC < 400 kHz.
4. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of
SDA.
5. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3VCC or 0.7VCC, assuming
that Rbus × Cbus time constant is within the values specified in Figure 12.
6. WC=0 set up time condition to enable the execution of a WRITE command.
7. WC=0 hold time condition to enable the execution of a WRITE command.
DS1766 - Rev 35
page 25/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 18. 1 MHz AC characteristics
Symbol
Alt.
Min.
Max.
Unit
fC
fSCL
Clock frequency
0
1
MHz
tCHCL
tHIGH
Clock pulse width high
260
-
ns
tCLCH
tLOW
Clock pulse width low
500
-
ns
tXH1XH2
tR
Input signal rise time
(1)
(1)
ns
tXL1XL2
tF
Input signal fall time
(1)
(1)
ns
120
ns
(2)
Parameter
tF
SDA (out) fall time
20(3)
tDXCH
tSU:DAT
Data in setup time
50
-
ns
tCLDX
tHD:DAT
Data in hold time
0
-
ns
100
-
ns
-
450
ns
tQL1QL2
tCLQX
(4)
tDH
Data out hold time
tCLQV(5)
tAA
Clock low to next data valid (access time)
tCHDL
tSU:STA
Start condition setup time
250
-
ns
tDLCL
tHD:STA
Start condition hold time
250
-
ns
tCHDH
tSU:STO
Stop condition setup time
250
-
ns
tDHDL
tBUF
Time between Stop condition and next Start condition
500
-
ns
(2)(6)
tSU:WC
WC set up time (before the Start condition)
0
-
µs
tDHWH(2)(7)
tHD:WC
WC hold time (after the Stop condition)
1
-
µs
tW
tWR
Write time
-
5
ms
tNS(2)
-
Pulse width ignored (input filter on SCL and SDA)
-
50
ns
tWLDL
1. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the I²C specification
that the input signal rise and fall times be less than 120 ns when fC < 1 MHz.
2. Characterized only, not tested in production.
3. With CL = 10 pF.
4. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of
SDA.
5. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 VCC or 0.7 VCC, assuming
that the Rbus × Cbus time constant is within the values specified in Figure 13.
6. WC=0 set up time condition to enable the execution of a WRITE command.
7. WC=0 hold time condition to enable the execution of a WRITE command.
DS1766 - Rev 35
page 26/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Figure 12. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum
frequency fC = 400 kHz
Bus line pull-up resistor (kΩ)
100
10
4k
R
bu
s ×
C
bu
s=
40
Here Rbus x Cbus = 120 ns
0
The Rbus x Cbus time constant
must be below the 400 ns
time constant line represented
on the left.
VCC
Rbus
ns
I²C bus
master
SCL
M24xxx
SDA
1
10
30
100
1000
Cbus
Bus line capacitor (pF)
Figure 13. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum
frequency fC = 1MHz
VCC
Bus line pull-up resistor (kΩ )
10 0
Rbus
10
4
xC
bus
The Rbus x Cbus time constant
Must be below the 150 ns
Time constant line
I²C bus SCL
represented on the left
master
SDA
= 15
0 ns
Here,
Rbus x Cbus = 120 ns
Rbus
M24xxx
Cbus
1
10
30
100
Bus line capacitor (pF)
DS1766 - Rev 35
page 27/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Figure 14. AC waveforms
Start
condition
Start
Stop
condition condition
tXL1XL2
tXH1XH2
tCHCL
tCLCH
SCL
tDLCL
tXL1XL2
SDA In
tCHDL
tXH1XH2
SDA
Input
tCLDX
SDA tDXCH
Change
tCHDH
tDHDL
WC
tDHWH
tWLDL
Stop
condition
Start
condition
SCL
SDA In
tW
tCHDH
tCHDL
Write cycle
tCHCL
SCL
tCLQV
SDA Out
DS1766 - Rev 35
tCLQX
Data valid
tQL1QL2
Data valid
page 28/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Package information
9
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
For die information concerning the M24256-BF delivered in unsawn wafer, please contact your nearest ST Sales
Office.
9.1
UFDFPN8 (DFN8) package information
UFDFPN8 is an 8-lead, 2 × 3 mm, 0.55 mm thickness ultra thin profile fine pitch dual flat package.
Figure 15. UFDFPN8 - Outline
D
N
A B
A
ccc C
Pin #1
ID marking
E
A1
C
eee C
Seating plane
A3
Side view
2x
aaa C
1
aaa C
2x
2
Top view
D2
e
1
2
L3
Datum A
b
L1
L L3
Pin #1
ID marking
E2
K
L
e/2
L1
e
Terminal tip
Detail “A”
Even terminal
ND-1 x e
Bottom view
1.
2.
3.
4.
DS1766 - Rev 35
See Detail “A”
Maximum package warpage is 0.05 mm.
Exposed copper is not systematic and can appear partially or totally according to the cross section.
Drawing is not to scale.
The central pad (the area E2 by D2 in the above illustration) must be either connected to VSS or left floating
(not connected) in the end application.
page 29/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
UFDFPN8 (DFN8) package information
Table 19. UFDFPN8 - Mechanical data
Symbol
inches(1)
millimeters
Min
Typ
Max
Min
Typ
Max
A
0.450
0.550
0.600
0.0177
0.0217
0.0236
A1
0.000
0.020
0.050
0.0000
0.0008
0.0020
b(2)
0.200
0.250
0.300
0.0079
0.0098
0.0118
D
1.900
2.000
2.100
0.0748
0.0787
0.0827
D2
1.200
-
1.600
0.0472
-
0.0630
E
2.900
3.000
3.100
0.1142
0.1181
0.1220
E2
1.200
-
1.600
0.0472
-
0.0630
e
-
0.500
-
0.0197
K
0.300
-
-
0.0118
-
-
L
0.300
-
0.500
0.0118
-
0.0197
L1
-
-
0.150
-
-
0.0059
L3
0.300
-
-
0.0118
-
-
aaa
-
-
0.150
-
-
0.0059
bbb
-
-
0.100
-
-
0.0039
ccc
-
-
0.100
-
-
0.0039
ddd
-
-
0.050
-
-
0.0020
eee(3)
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip.
3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from measuring.
Figure 16. UFDFPN8 - Recommended footprint
1.400
0.500
0.300
0.600
1.200
1.300
1.
DS1766 - Rev 35
Dimensions are expressed in millimeters.
page 30/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
TSSOP8 package information
9.2
TSSOP8 package information
TSSOP8 is an 8-lead thin shrink small outline, 3 x 6.4 mm, 0.65 mm pitch, package.
Figure 17. TSSOP8 – Outline
D
8
5
c
E1
1
E
4
α
A1
CP
A2
A
b
1.
L
L1
e
Drawing is not to scale.
Table 20. TSSOP8 – Mechanical data
Symbol
inches (1)
millimeters
Min.
Typ.
Max.
Min.
Typ.
Max.
A
-
-
1.200
-
-
0.0472
A1
0.050
-
0.150
0.0020
-
0.0059
A2
0.800
1.000
1.050
0.0315
0.0394
0.0413
b
0.190
-
0.300
0.0075
-
0.0118
c
0.090
-
0.200
0.0035
-
0.0079
CP
-
-
0.100
-
-
0.0039
D
2.900
3.000
3.100
0.1142
0.1181
0.1220
e
-
0.650
-
-
0.0256
-
E
6.200
6.400
6.600
0.2441
0.2520
0.2598
E1
4.300
4.400
4.500
0.1693
0.1732
0.1772
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
α
0°
-
8°
0°
-
8°
1. Values in inches are converted from mm and rounded to four decimal digits.
DS1766 - Rev 35
page 31/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
TSSOP8 package information
Figure 18. TSSOP8 – Recommended footprint
2.3
1.0
7.0
0.65
0.35
1.
DS1766 - Rev 35
Dimensions are expressed in millimeters.
page 32/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
SO8N package information
9.3
SO8N package information
SO8N is an 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width, package.
Figure 19. SO8N – Outline
h x 45˚
A2
A
c
ccc
b
e
0.25 mm
GAUGE PLANE
D
k
8
E1
E
1
A1
L
L1
1.
Drawing is not to scale.
Table 21. SO8N – Mechanical data
Symbol
inches (1)
millimeters
Min.
Typ.
Max.
Min.
Typ.
Max.
A
-
-
1.750
-
-
0.0689
A1
0.100
-
0.250
0.0039
-
0.0098
A2
1.250
-
-
0.0492
-
-
b
0.280
-
0.480
0.0110
-
0.0189
c
0.170
-
0.230
0.0067
-
0.0091
D
4.800
4.900
5.000
0.1890
0.1929
0.1969
E
5.800
6.000
6.200
0.2283
0.2362
0.2441
E1
3.800
3.900
4.000
0.1496
0.1535
0.1575
e
-
1.270
-
-
0.0500
-
h
0.250
-
0.500
0.0098
-
0.0197
k
0°
-
8°
0°
-
8°
L
0.400
-
1.270
0.0157
-
0.0500
L1
-
1.040
-
-
0.0409
-
ccc
-
-
0.100
-
-
0.0039
1. Values in inches are converted from mm and rounded to four decimal digits.
DS1766 - Rev 35
page 33/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
SO8N package information
Figure 20. SO8N - Recommended footprint
3.9
6.7
0.6 (x8)
1.27
1.
DS1766 - Rev 35
Dimensions are expressed in millimeters.
page 34/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
WLCSP8 (CS) package information
9.4
WLCSP8 (CS) package information
WLCSP8 is a 8 bumps, 1.289 x 1.379 mm, 0.4 mm pitch wafer level chip scale package
Figure 21. WLCSP8 - Outline
bbb Z
D
X
e2
Y
e
Detail A
E
e3
aaa
Reference
F
Wafer back side
H
A
A2
(4X)
e1
G
Orientation
Bump side
Side view
Bump
A1
eee Z
b
Ø ccc M
Ø ddd M
Z
Z X Y
Z
Detail A
Rotated 90 °
1.
2.
3.
DS1766 - Rev 35
Seating plane
Drawing is not to scale
Primary datum Z and seating plane are defined by the spherical crowns of the bump.
Bump position designation per JESD 95-1, SPP-010.
page 35/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
WLCSP8 (CS) package information
Table 22. WLCSP8 - Mechanical data
Symbol
inches(1)
millimeters
Min
Typ
Max
Min
Typ
Max
A
0.500
0.540
0.580
0.0197
0.0213
0.0228
A1
-
0.190
-
-
0.0075
-
A2
-
0.350
-
-
0.0138
-
b(2)
-
0.270
-
-
0.0106
-
D
-
1.289
1.309
-
0.0507
0.0515
E
-
1.379
1.399
-
0.0542
0.0550
e
-
0.800
-
-
0.0315
-
e1
-
0.693
-
-
0.0273
-
e2
-
0.400
-
-
0.0157
-
e3
-
0.400
-
-
0.0157
-
F
-
0.342
-
-
0.0135
-
G
-
0.245
-
-
0.0096
-
H
-
0.245
-
-
0.0096
-
aaa
-
0.110
-
-
0.0043
-
bbb
-
0.110
-
-
0.0043
-
ccc
-
0.110
-
-
0.0043
-
ddd
-
0.060
-
-
0.0024
-
eee
-
0.060
-
-
0.0024
-
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
Figure 22. WLCSP8 - Recommended footprint
0.400
0.800
0.693
0.400
8 bumps x Ø 0.270
1.
DS1766 - Rev 35
Dimensions are expressed in millimeters.
page 36/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
WLCSP8 (CU) package information
9.5
WLCSP8 (CU) package information
This WLCSP is a 8 balls, 1.289 x 1.376 mm, 0.4 mm pitch, with BSC, wafer level chip scale package
Figure 23. WLCSP8 - Outline
e1
X
Y
E
aaa
TOP VIEW
1
A1
b
e3
F
E D C B A
A
A2
Orientation reference
SIDE VIEW
BOTTOM VIEW
A1
ccc M
ddd M
DS1766 - Rev 35
e2
2
bbb Z
1.
2.
3.
4.
e
G
3
A3
(2X)
Orientation reference
Detail A
Backside protection
D
bbb Z
aaa
(2X)
b
Z XY
Z
Z
Detail A
Rotated 90
Seating plane
Drawing is not to scale.
Dimension is measured at the maximum bump diameter parallel to primary datum Z.
Primary datum Z and seating plane are defined by the spherical crowns of the bump.
Bump position designation per JESD 95-1, SPP-010.
page 37/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
WLCSP8 (CU) package information
Table 23. WLCSP8 - Mechanical data
inches(1)
Millimeters
Min
Typ
Max
Min
Typ
Max
A
0.255
0.295
0.335
A1
-
0.095
-
0.0100
0.0116
0.0132
-
0.0037
-
A2
-
0.175
-
-
0.0069
-
A3
-
0.025
-
-
0.0010
-
b
-
0.185
-
-
0.0073
-
D
-
1.289
1.309
-
0.0507
0.0515
E
-
1.376
1.396
-
0.0542
0.0550
e
-
0.400
-
-
0.0157
-
e1
-
0.800
-
-
0.0315
-
e2
-
0.346
-
-
0.0136
-
e3
-
0.693
-
-
0.0273
-
F
-
0.342
-
-
0.0135
-
G
-
0.245
-
-
0.0096
-
aaa
-
0.110
-
-
0.0043
-
bbb
-
0.110
-
-
0.0043
-
ccc
-
0.110
-
-
0.0043
-
ddd
-
0.060
-
-
0.0024
-
eee
-
0.060
-
-
0.0024
-
1. Values in inches are converted from mm and rounded to the 4rd decimal place
Figure 24. WLCSP8 - Recommended footprint
0.800
0.400
0.346
0.693
8 bumps x
1.
DS1766 - Rev 35
0.185
Dimensions are expressed in millimeters.
page 38/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Ordering information
10
Ordering information
Table 24. Ordering information scheme
Example:
M24
256
-D
W
MN
6
T
P
/K
Device type
M24 = I2C serial access EEPROM
Device function
256 = 256 Kbit (32 K x 8 bit)
Device family
B = Without identification page
D = With identification page
Operating voltage
W = VCC = 2.5 V to 5.5 V
R = VCC = 1.8 V to 5.5 V
F = VCC = 1.7 V to 5.5 V
Package(1)
MN = SO8 (150 mil width)
DW = TSSOP8 (169 mil width)
MC = UFDFPN8 (DFN8)
CS = WLCSP (chip scale package)
CU = WLCSP Ultra-thin
Device grade
6 = Industrial: device tested with standard test flow over -40 to 85 °C
Option
T = Tape and reel packing
blank = tube packing
Plating technology
P or G = ECOPACK2
Process(2)
/K = Manufacturing technology code
1. ECOPACK2 (RoHS compliant and free of brominated, chlorinated and antimony oxide flame retardants).
2. These process letters appear on the device package (marking) and on the shipment box. Contact your nearest ST Sales
Office for further information
DS1766 - Rev 35
page 39/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Ordering information
Table 25. Ordering information scheme (unsawn wafer)
Example:
M24
256 -
B
F
K
W
20
I
/90
Device type(1)
M24 = I2C serial access EEPROM
Device function
256 = 256 Kbit (32 K x 8 bit)
Device family
B = Without identification page
Operating voltage
F = VCC = 1.7 V to 5.5 V
Process
K = F8H
Delivery form
W =Unsawn wafer
Wafer thickness
20 = Non-backlapped wafer
Wafer testing
I = Inkless test
Device grade
90 = -40°C to 85°C
1. For all information concerning the M24256 delivered in unsawn wafer, please contact your nearest ST Sales Office.
Note:
DS1766 - Rev 35
Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting from
such use. In no event will ST be liable for the customer using any of these engineering samples in production.
ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a
qualification activity.
page 40/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Revision history
Table 26. Document revision history
Date
Revision
Changes
Datasheet revision 25 split into:
– M24256-125 datasheet for automotive products (range 3),
– M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF (this
datasheet) for standard products (range 6).
Added:
– Reference M24256-DF
– Table 1: Signal names, Table 12: Memory cell data retention
22-Jun-2012
26
Updated:
– Table 17: 400 kHz AC characteristics and Table 18: 1 MHz AC
characteristics: added set up and hold timing conditions on WC (tWLDL and
tDHWH)
– Figure 18: M24256-DFCS6TP/K, WLCSP 8-bump wafer-level chip scale
package outline and Table 21: M24256-DFCS6TP/K, WLCSP 8- bump waferlevel chip scale package mechanical data
– Cycling and data retention limits
Deleted:
– UFDFPN8, package revision MB
01-Aug-2012
27
18-Sep-2012
28
20-Nov-2012
29
Updated Figure 3: WLCSP connections and Figure 18: M24256-DFCS6TP/K,
WLCSP 8-bump wafer-level chip scale package outline.
Changed title of Figure 3: WLCSP connections.
Updated Section 5.2.2: Current Address Read.
Corrected “Device family” data in Table 24: Ordering information scheme.
Deleted note (3) under Table 3: Device select code.
17-Dec-2012
30
Modified ICCO condition in Table 15: DC characteristics (M24256-BR,
M24256-DR device grade 6).
Deleted incorrect table (Table 15. DC characteristics (M24256-R, device grade
6)).
Updated package list in Table 24: Ordering information scheme.
Updated Figure 3: WLCSP connections.
21-Feb-2014
31
Added notes 4. and 5. in Table 14 and notes 5. and 6. in Table 15 and Table
16
Updated
17-Jun-2014
32
– Figure 3,
– note 1 on Table 12
– In Table 24 note 1 on Package and blank reference on Option.
Added:
– Unsawn wafer reference on cover page and Table 25: Ordering information
scheme (unsawn wafer)
01-Jun-2015
33
– Figure 20: WLCSP (CS) - 8-bump, 1.289 x 1.376 mm, 0.4 mm pitch wafer
level chip scale package recommended footprint
– reference to Engineering samples
Updated:
– Section 2.6.2, Section 4.5
DS1766 - Rev 35
page 41/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Date
Revision
Changes
– Note 2 on Table 6
– Table 18
– Note 2 on Figure 15
– Table 21
– Note 2 on Table 24
Removed:
– Note on tNS max value on Table 18
Added WLCSP (CU) package in cover page and in Section 9: Package
information, Table 2: Signals vs. bump position.
14-Mar-2018
34
Updated Table 10: AC measurement conditions, Table 22: WLCSP (CS)8-bump, 1.289 x 1.376 mm, 0.4 mm pitch wafer level chip scale package
mechanical data, Table 24: Ordering information scheme
Updated:
19-Nov-2020
35
•
Figure 5. Block diagram,
•
Table 6. Absolute maximum ratings, Table 12. Cycling performance by
groups of four bytes, Table 14. DC characteristics (M24256-BW, device
grade 6), Table 15. DC characteristics (M24256-BR, M24256-DR device
grade 6), Table 16. DC characteristics (M24256-BF, M24256-DF, device
grade 6), Table 18. 1 MHz AC characteristics,
•
note 1 in Table 13. Memory cell data retention
•
title of Figure 17. TSSOP8 – Outline andTable 20. TSSOP8 –
Mechanical data; Figure 19. SO8N – Outline, Table 21. SO8N
– Mechanical data and Figure 20. SO8N - Recommended
footprint; Figure 21. WLCSP8 - Outline, Table 22. WLCSP8 Mechanical data and Figure 22. WLCSP8 - Recommended footprint;
Figure 23. WLCSP8 - Outline, Table 23. WLCSP8 - Mechanical data
and Figure 24. WLCSP8 - Recommended footprint
Added:
•
DS1766 - Rev 35
, Figure 18. TSSOP8 – Recommended footprint
page 42/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Contents
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2.1
Serial Clock (SCL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3
Chip Enable (E2, E1, E0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.4
Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.5
VSS (ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.6
Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.6.1
Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.6.2
Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.6.3
Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.6.4
Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
5
4.1
Start condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3
Data input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.4
Acknowledge bit (ACK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.5
Device addressing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5.1
5.2
DS1766 - Rev 35
Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1.1
Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1.2
Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.3
Write identification page (M24256-D only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.4
Lock identification page (M24256-D only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.5
ECC (Error Correction Code) and Write cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.6
Minimizing Write delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.2.1
Random Address Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.2.2
Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
page 43/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Contents
5.2.3
Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3
Read identification page (M24256-D only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4
Read the lock status (M24256-D only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
7
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
8
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
9
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
10
9.1
UFDFPN8 (DFN8) package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9.2
TSSOP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9.3
SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
9.4
WLCSP8 (CS) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
9.5
WLCSP8 (CU) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
DS1766 - Rev 35
page 44/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Signal vs. bump position . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device select code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Most significant address byte. . . . . . . . . . . . . . . . . . . . . . . .
Least significant address byte . . . . . . . . . . . . . . . . . . . . . . .
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . .
Operating conditions (voltage range W) . . . . . . . . . . . . . . . .
Operating conditions (voltage range R) . . . . . . . . . . . . . . . . .
Operating conditions (voltage range F) . . . . . . . . . . . . . . . . .
AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . .
Input parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cycling performance by groups of four bytes . . . . . . . . . . . . .
Memory cell data retention . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics (M24256-BW, device grade 6). . . . . . . . . .
DC characteristics (M24256-BR, M24256-DR device grade 6) .
DC characteristics (M24256-BF, M24256-DF, device grade 6) .
400 kHz AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . .
1 MHz AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
UFDFPN8 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . .
TSSOP8 – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . .
SO8N – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Mechanical data. . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Mechanical data. . . . . . . . . . . . . . . . . . . . . . . . .
Ordering information scheme. . . . . . . . . . . . . . . . . . . . . . . .
Ordering information scheme (unsawn wafer) . . . . . . . . . . . .
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . .
DS1766 - Rev 35
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. 2
. 3
. 9
10
10
19
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page 45/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Logic diagram. . . . . . . . . . . . . . . . .
8-pin package connections, top view .
WLCSP connections . . . . . . . . . . . .
Chip enable inputs connection . . . . .
Block diagram . . . . . . . . . . . . . . . .
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Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
I2C bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Write mode sequences with WC = 0 (data write enabled) .
Write mode sequences with WC = 1 (data write inhibited).
Write cycle polling flowchart using ACK . . . . . . . . . . . . .
Read mode sequences . . . . . . . . . . . . . . . . . . . . . . . .
AC measurement I/O waveform . . . . . . . . . . . . . . . . . .
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. 7
11
12
14
15
21
Figure 12.
Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
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Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1MHz
AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UFDFPN8 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UFDFPN8 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSSOP8 – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSSOP8 – Recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SO8N – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SO8N - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WLCSP8 - Recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS1766 - Rev 35
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page 46/47
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS1766 - Rev 35
page 47/47