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M25P05-AVMF3G

M25P05-AVMF3G

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M25P05-AVMF3G - 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus ...

  • 数据手册
  • 价格&库存
M25P05-AVMF3G 数据手册
M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 40MHz to 50MHz Clock Rate (maximum) Deep Power-down Mode 1µA (typical) Electronic Signatures – JEDEC Standard Two-Byte Signature (20xxh) – RES Instruction, One-Byte, Signature, for backward compatibility More than 100000 Erase/Program Cycles per Sector More than 20 Year Data Retention Figure 1. Packages VDFPN8 (ME) 8x6mm (MLP8) VDFPN8 (MP) (MLP8) Table 1. Product List Reference Part Number M25P32 M25P16 M25P80 M25Pxx M25P40 M25P20 M25P10-A M25P05-A SO16 (MF) 300 mil width 8 1 SO8 (MN) 150 mil width October 2004 For further information contact your local ST sales office. 1/7 M25PXX SUMMARY DESCRIPTION The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as a number of sectors, each containing 256 or 128 pages. Each page is 256 bytes wide. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction. Figure 2. Logic Diagram VCC Figure 3. SO8 and VDFPN Connections M25Pxx S Q W VSS 1 2 3 4 8 7 6 5 AI10259 VCC HOLD C D D C S W HOLD M25Pxx Q Note: 1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to V SS, and must not be allowed to be connected to any other voltage or signal line on the PCB. Figure 4. SO16 Connections M25Pxx HOLD VCC DU DU DU DU S Q 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 AI10260 VSS AI10258 Table 2. Signal Names C D Q Serial Clock Serial Data Input Serial Data Output Chip Select Write Protect Hold Supply Voltage Ground C D DU DU DU DU VSS W Note: 1. DU = Don’t Use S W HOLD VCC VSS 2/7 M25PXX Figure 5. Block Diagram HOLD W S C D Q Control Logic High Voltage Generator I/O Shift Register Address Register and Counter 256 Byte Data Buffer Status Register Top of Address Space Y Decoder Size of the read-only memory area 00000h 256 Bytes (Page Size) X Decoder 000FFh AI10261 3/7 M25PXX Table 3. Instruction Set Instruction WREN WRDI RDID RDSR WRSR READ Description Write Enable Write Disable Read Identification Read Status Register Write Status Register Read Data Bytes One-byte Instruction Code 0000 0110 0000 0100 1001 1111 0000 0101 0000 0001 0000 0011 0000 1011 0000 0010 1101 1000 1100 0111 1011 1001 06h 04h 9Fh 05h 01h 03h 0Bh 02h D8h C7h B9h Address Bytes 0 0 0 0 0 3 3 3 3 0 0 0 1010 1011 ABh 0 0 Dummy Bytes 0 0 0 0 0 0 1 0 0 0 0 3 Data Bytes 0 0 1 to 3 1 to ∞ 1 1 to ∞ 1 to ∞ 1 to 256 0 0 0 1 to ∞ 0 FAST_READ Read Data Bytes at Higher Speed PP SE BE DP Page Program Sector Erase Bulk Erase Deep Power-down Release from Deep Power-down, and Read Electronic Signature Release from Deep Power-down RES Table 4. Status Register Format b7 SRWD 0 0 BP2 BP1 BP0 WEL b0 WIP Status Register Write Protect Block Protect Bits Write Enable Latch Bit Write In Progress Bit 4/7 M25PXX PART NUMBERING Table 5. Ordering Information Scheme Example: Device Type M25P = Serial Flash Memory for Code Storage Device Function 32 = 32Mbit (4M x 8) 16 = 16Mbit (2M x 8) 80 = 8Mbit (1M x 8) 40 = 4Mbit (512K x 8) 20 = 2Mbit (256K x 8) 10-A = 1Mbit (128K x 8) 05-A = 512Kbit (64K x 8) Operating Voltage V = VCC = 2.7 to 3.6V Package ME = VDFPN8 8x6mm (MLP8) MP = VDFPN8 (MLP8) MF = SO16 (300 mil width) MN = SO8 (150 mil width) Device Grade 6 = Industrial temperature range, –40 to 85 °C. Device tested with standard test flow 3 = Device tested with High Reliability Certified Flow1. Automotive temperature range (–40 to 125 °C) Option blank = Standard Packing T = Tape and Reel Packing Plating Technology blank = Standard SnPb plating P = Lead-Free and RoHS compliant G = Lead-Free, RoHS compliant, Sb2O3-free and TBBA-free Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy. M25P80 – V MP 6 T P For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. 5/7 M25PXX REVISION HISTORY Table 6. Document Revision History Date 08-Oct-2004 Rev. 1.0 First release Description of Revision 6/7 M25PXX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7
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