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M25P05-AVMF3TG

M25P05-AVMF3TG

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M25P05-AVMF3TG - 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus...

  • 详情介绍
  • 数据手册
  • 价格&库存
M25P05-AVMF3TG 数据手册
M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 40MHz to 50MHz Clock Rate (maximum) Deep Power-down Mode 1µA (typical) Electronic Signatures – JEDEC Standard Two-Byte Signature (20xxh) – RES Instruction, One-Byte, Signature, for backward compatibility More than 100000 Erase/Program Cycles per Sector More than 20 Year Data Retention Figure 1. Packages VDFPN8 (ME) 8x6mm (MLP8) VDFPN8 (MP) (MLP8) Table 1. Product List Reference Part Number M25P32 M25P16 M25P80 M25Pxx M25P40 M25P20 M25P10-A M25P05-A SO16 (MF) 300 mil width 8 1 SO8 (MN) 150 mil width October 2004 For further information contact your local ST sales office. 1/7 M25PXX SUMMARY DESCRIPTION The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as a number of sectors, each containing 256 or 128 pages. Each page is 256 bytes wide. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction. Figure 2. Logic Diagram VCC Figure 3. SO8 and VDFPN Connections M25Pxx S Q W VSS 1 2 3 4 8 7 6 5 AI10259 VCC HOLD C D D C S W HOLD M25Pxx Q Note: 1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to V SS, and must not be allowed to be connected to any other voltage or signal line on the PCB. Figure 4. SO16 Connections M25Pxx HOLD VCC DU DU DU DU S Q 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 AI10260 VSS AI10258 Table 2. Signal Names C D Q Serial Clock Serial Data Input Serial Data Output Chip Select Write Protect Hold Supply Voltage Ground C D DU DU DU DU VSS W Note: 1. DU = Don’t Use S W HOLD VCC VSS 2/7 M25PXX Figure 5. Block Diagram HOLD W S C D Q Control Logic High Voltage Generator I/O Shift Register Address Register and Counter 256 Byte Data Buffer Status Register Top of Address Space Y Decoder Size of the read-only memory area 00000h 256 Bytes (Page Size) X Decoder 000FFh AI10261 3/7 M25PXX Table 3. Instruction Set Instruction WREN WRDI RDID RDSR WRSR READ Description Write Enable Write Disable Read Identification Read Status Register Write Status Register Read Data Bytes One-byte Instruction Code 0000 0110 0000 0100 1001 1111 0000 0101 0000 0001 0000 0011 0000 1011 0000 0010 1101 1000 1100 0111 1011 1001 06h 04h 9Fh 05h 01h 03h 0Bh 02h D8h C7h B9h Address Bytes 0 0 0 0 0 3 3 3 3 0 0 0 1010 1011 ABh 0 0 Dummy Bytes 0 0 0 0 0 0 1 0 0 0 0 3 Data Bytes 0 0 1 to 3 1 to ∞ 1 1 to ∞ 1 to ∞ 1 to 256 0 0 0 1 to ∞ 0 FAST_READ Read Data Bytes at Higher Speed PP SE BE DP Page Program Sector Erase Bulk Erase Deep Power-down Release from Deep Power-down, and Read Electronic Signature Release from Deep Power-down RES Table 4. Status Register Format b7 SRWD 0 0 BP2 BP1 BP0 WEL b0 WIP Status Register Write Protect Block Protect Bits Write Enable Latch Bit Write In Progress Bit 4/7 M25PXX PART NUMBERING Table 5. Ordering Information Scheme Example: Device Type M25P = Serial Flash Memory for Code Storage Device Function 32 = 32Mbit (4M x 8) 16 = 16Mbit (2M x 8) 80 = 8Mbit (1M x 8) 40 = 4Mbit (512K x 8) 20 = 2Mbit (256K x 8) 10-A = 1Mbit (128K x 8) 05-A = 512Kbit (64K x 8) Operating Voltage V = VCC = 2.7 to 3.6V Package ME = VDFPN8 8x6mm (MLP8) MP = VDFPN8 (MLP8) MF = SO16 (300 mil width) MN = SO8 (150 mil width) Device Grade 6 = Industrial temperature range, –40 to 85 °C. Device tested with standard test flow 3 = Device tested with High Reliability Certified Flow1. Automotive temperature range (–40 to 125 °C) Option blank = Standard Packing T = Tape and Reel Packing Plating Technology blank = Standard SnPb plating P = Lead-Free and RoHS compliant G = Lead-Free, RoHS compliant, Sb2O3-free and TBBA-free Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy. M25P80 – V MP 6 T P For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. 5/7 M25PXX REVISION HISTORY Table 6. Document Revision History Date 08-Oct-2004 Rev. 1.0 First release Description of Revision 6/7 M25PXX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7
M25P05-AVMF3TG
### 物料型号 - M25PXX:表示系列型号,涵盖512Kbit到32Mbit的存储容量。

### 器件简介 - M25Pxx 是一款512Kbit到32Mbit的串行闪存,通过高速SPI兼容总线访问,具有先进的写保护机制。

### 引脚分配 - SO8 (MN):150 mil宽度。 - SO16 (MF):300 mil宽度。 - VDFPN8 (ME) 和 VDFPN8 (MP):8x6mm的尺寸,MLP8封装。

### 参数特性 - 存储容量:从512Kbit到32Mbit。 - 页程序:最多256字节,典型1.4ms。 - 扇区擦除:256Kbit或512Kbit。 - 全批量擦除:512Kbit到32Mbit。 - 供电电压:2.7到3.6V单电源电压。 - SPI接口:兼容串行接口,最高40MHz到50MHz的时钟频率。 - 深度功耗降低模式:典型1µA。 - 电子签名:JEDEC标准两字节签名(20xxh)。 - 擦写周期:每个扇区超过100000次。 - 数据保持:超过20年。

### 功能详解 - 编程:可以1到256字节为单位进行编程。 - 扇区组织:由多个扇区组成,每个扇区包含256或128页,每页256字节。 - 擦除:可以使用Bulk Erase指令擦除整个存储器,或使用Sector Erase指令逐个扇区擦除。

### 应用信息 - 适用于需要代码存储的嵌入式系统,特别是在需要高速数据访问和写保护的应用中。

### 封装信息 - SO8:150 mil宽度的8引脚封装。 - SO16:300 mil宽度的16引脚封装。 - MLP8:8x6mm的微型倒装封装。
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