M29F002NT-90P1TR

M29F002T, M29F002NT M29F002B 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code, M29F002T: B0h – Device Code, M29F002NT: B0h – Device Code, M29F002B: 34h DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5V VCC supply.For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles. July 1998 32 1 PDIP32 (P) PLCC32 (K) TSOP32 (N) 8 x 20mm Figure 1. Logic Diagram VCC 18 A0-A17 W E G (*) RPNC M29F002T M29F002B M29F002NT 8 DQ0-DQ7 VSS AI02078C Note: * RPNC function is not available for the M29F002NT 1/29 M29F002T, M29F002NT, M29F002B Figure 2A. DIP Pin Connections Figure 2B. LCC Pin Connections (*) RPNC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI02079C 1 32 2 31 3 30 4 29 5 28 6 27 7 26 M29F002T 25 8 M29F002B 9 M29F002NT24 10 23 11 22 12 21 13 20 14 19 15 18 16 17 AI02080C VCC W A17 A14 A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A12 A15 A16 RPNC VCC W A17 1 32 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29F002T M29F002B 25 17 Note: Pin 1 is not connected for the M29F002NT Figure 2C. TSOP Pin Connections Table 1. Signal Names A0-A17 DQ0-DQ7 Address Inputs Data Input/Outputs, Command Inputs Chip Enable Output Enable Write Enable Reset / Block Temporary Unprotect Supply Voltage Ground A11 A9 A8 A13 A14 A17 W VCC RPNC A16 A15 A12 A7 A6 A5 A4 1 32 8 9 M29F002T M29F002B 25 24 16 17 AI02361B G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 E G W RPNC (*) VCC VSS DESCRIPTION (cont’d) Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commandsto a CommandInterfaceusing standard microprocessor write timings. The device is offered in PLCC32, PDIP32 and TSOP32 (8 x 20 mm) packages. 2/29 M29F002T, M29F002NT, M29F002B Table 2. Absolute Maximum Ratings (1) Symbol TA TBIAS TSTG VIO (2) Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input or Output Voltages Supply Voltage (2) (3) Value –40 to 125 –50 to 125 –65 to 150 –0.6 to 7 –0.6 to 7 –0.6 to 13.5 Unit °C °C °C V V V VCC V(A9, E, G, RPNC) A9, E, G, RPNC Voltage Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. Organisation The M29F002 is organised as 256K x 8. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. A Reset/Block Temporary Unprotection RPNC (NOT available on M29F002NT) tri-level input provides a hardwarereset when pulled Low, and when held High (at VID) temporarily unprotects blocks previously protected allowing them to be programed and erased. Erase and Program operations are controlled by an internal Program/Erase Controller (P/E.C.).StatusRegister data outputon DQ7 provides a Data Polling signal, and DQ6 and DQ2 provide Toggle signals to indicate the state of the P/E.C operations. Memory Blocks The devices feature asymmetrically blocked architecture providing system memory integration. The M29F002 has an array of 7 blocks, one Boot Block of 16 KBytes, two Parameter Blocks of 8 KBytes, one Main Block of 32 KBytes and three Main Blocks of 64 KBytes. The memory map is shown in Figure 3. Each block can be erased separately, any combination of blocks can be specified for multi-block erase or the entire chip may be erased. The Erase operations are managedautomaticallyby the P/E.C.The block erase operation can be suspended in order to read from or program to any block not being ersased, and then resumed. Block protection provides additional data security. Each block can be separately protectedor unprotectedagainstProgram or Erase on programming equipment. All previously protected blocks can be temporarily unprotectedin the application. Bus Operations The following operations can be performed using the appropriatebus cycles: Read (Array, Electronic Signature, Block Protection Status), Write command, Output Disable, Standby, Reset, Block Prot ec t io n , Unp ro t e ct io n, P ro t e cti on Verif y, Unprotection Verify and Block Temporary Unprotection. See Tables 4 and 5. Command Interface Instructions, made up of commands written in cycles, can be given to the Program/EraseController through a Command Interface (C.I.). For added data protection, program or erase execution starts after 4 or 6 cycles. The first, second, fourth and fifth cycles are used to input Coded cycles to the C.I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Command’ itself and its confirmation, when applicable, are given on the third, fourth or sixth cycles. Any incorrect command or any improper command sequence will reset the device to Read Array mode. 3/29 M29F002T, M29F002NT, M29F002B Figure 3. Memory Map and Block Address Table M29F002T, M29F002NT 3FFFFh 16K BOOT BLOCK 3C000h 3BFFFh 8K PARAMETER BLOCK 3A000h 39FFFh 8K PARAMETER BLOCK 38000h 37FFFh 32K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FFFFh 64K MAIN BLOCK 10000h 0FFFFh 64K MAIN BLOCK 00000h 00000h AI02081C M29F002B 3FFFFh 64K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FFFFh 64K MAIN BLOCK 10000h 0FFFFh 32K MAIN BLOCK 08000h 07FFFh 8K PARAMETER BLOCK 06000h 05FFFh 8K PARAMETER BLOCK 04000h 03FFFh 16K BOOT BLOCK Table 3A. M29F002T, M29F002NT Block Address Table Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-37FFFh 38000h-39FFFh 3A000h-3BFFFh 3C000h-3FFFFh A17 0 0 1 1 1 1 1 A16 0 1 0 1 1 1 1 A15 X X X 0 1 1 1 A14 X X X X 0 0 1 A13 X X X X 0 1 X Table 3B. M29F002B Block Address Table Address Range 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh A17 0 0 0 0 0 1 1 A16 0 0 0 0 1 0 1 A15 0 0 0 1 X X X A14 0 1 1 X X X X A13 X 0 1 X X X X 4/29 M29F002T, M29F002NT, M29F002B Instructions Seven instructions are defined to perform Read Array, Auto Select (to read the ElectronicSignature or Block ProtectionStatus), Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations.The Status Register Data Polling, Toggle, Error bits may be read at any time, during programming or erase, to monitor the progress of the operation. Instructions are composed of up to six cycles. The first two cycles input a Coded sequence to the Command Interfacewhich iscommon to all instructions (see Table 8). The third cycle inputs the instruction set-up command. Subsequent cycles output the addressed data, Electronic Signature or Block Protection Status for Read operations. In order to give additional data protection,the instructions for Program and Block or Chip Erase require further command inputs. For a Programinstruction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles input a further Coded sequence before the Erase confirm command on the sixth cycle. Erasure of a memory block may be suspended,in orderto read data from another block or to program data in another block, and then resumed. When power is first applied or if VCC falls below VLKO, the command interface is reset to Read Array. SIGNAL DESCRIPTIONS See Figure 1 and Table 1. Address Inputs (A0-A17). The address inputs for the memory array are latched during a write operation on the falling edge of Chip Enable E or Write Enable W. When A9 is raised to VID, either a Read ElectronicSignature Manufactureror Device Code, Block Protection Status or a Write Block Protection or Block Unprotection is enabled depending on the combination of levels on A0, A1, A6, A12 and A15. Data Input/Outputs (DQ0-DQ7). The input is data to be programmed in the memory array or a command to be written to the C.I. Both are latched on the rising edge of Chip Enable E or Write Enable W. The output is data from the Memory Array, the Electronic Signature Manufacturer or Device codes, the Block Protection Status or the Status register Data Polling bit DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Chip Enable E and Output Enable G are active. The output is high impedance when the chip is deselected or the outputs are disabled and when RPNC is at a Low level. Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. E High deselectsthe memory and reduces the power consumptionto the standby level. E can also be used to control writing to the command register and to the memory array, while W remains at a low level. The Chip Enable must be forced to VID during the Block Unprotection operation. Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation. When G is High the outputs are High impedance. G must be forced to VID level during Block Protection and Unprotection operations. Write Enable (W). This input controls writing to the Command Registerand Addressand Datalatches. Reset/Block Temporary Unprotect/No Connect Input (RPNC). The RPNC (not available for the M29F002NT) input provides hardware reset and protected block(s) temporary unprotection functions. In read or write mode, the RPNC pin can be left open (Not Connected) or held at VIH. Reset of the memory is acheived by pulling RPNC to VIL for at least 500ns. When the reset pulse is given, if the memory is in Read or Standby modes, it will be available for new operations in 50ns after the rising edge of RPNC. If the memory is in Erase, Erase Suspend or Program modes the reset will take 10µs. Ahardware reset duringan Eraseor Program operation will corrupt the data being programmed or the sector(s) being erased. Temporary block unprotection is made by holding RPNC at VID. In this condition previously protected blocks can be programmed or erased. The transition of RPNC from VIH to VID must slower than 500ns. When RPNC is returned from VID to VIH all blocks temporarily unprotected will be again protected. VCC Supply Voltage. The power supply for all operations (Read, Program and Erase). VSS Ground. VSS is the reference for all voltage measurements. DEVICE OPERATIONS See Tables 4, 5 and 6. Read. Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register or the Block Protection Status. Both Chip Enable E and Output Enable G must be low in order to read the output of the memory. 5/29 M29F002T, M29F002NT, M29F002B Table 4. User Bus Operations (1) Operation Read Byte Write Byte Output Disable Standby Reset (6) E VIL VIL VIL VIH X VIL VID G VIL VIH VIH X X VID VID W VIH VIL VIH X X VIL Pulse VIL Pulse RPNC (6) VIH/NC VIH/NC (5) (5) A0 A0 A0 X X X X X A1 A1 A1 X X X X X A6 A6 A6 X X X X X A9 A9 A9 X X X VID VID A12 A12 A12 X X X X VIH A15 A15 A15 X X X X VIH DQ0-DQ7 Data Output Data Input Hi-Z Hi-Z Hi-Z X X Block Protect Status (3) Block Protect Status (3) VIH/NC (5) VIH/NC VIL VIH/NC (5) VIH/NC (5) VIH/NC (5) (5) Block (2,4) Protection Blocks Unprotection(4) Block Protection Verify(2,4) Block Unprotection Verify(2,4) Block Temporary Unprotection (6) Notes: 1. 2. 3. 4. 5. 6. VIL VIL VIH VIL VIH VIL VID A12 A15 VIL VIL VIH VIH/NC (5) VIL VIH VIH VID A12 A15 X X X VID X X X X X X X X = VIL or VIH Block Address must be given on A13-A17 bits. See Table 6. Operation performed on programming equipment. RPNC can be held at VIH or left open (Not Connected). Not Available on M29F002NT. Table 5. Read Electronic Signature (following AS instruction or with A9 = VID) Code Manufact. Code Device Code M29F002T M29F002NT M29F002B Device E VIL VIL VIL G VIL VIL VIL W VIH VIH VIH A0 VIL VIH VIH A1 VIL VIL VIL Other Addresses Don’t Care Don’t Care Don’t Care DQ0 - DQ7 20h B0h 34h Table 6. Read Block Protection with AS Instruction Code Protected Block Unprotected Block E VIL VIL G VIL VIL W VIH VIH A0 VIL VIL A1 VIH VIH A13 - A17 Block Address Block Address Other Addresses Don’t Care Don’t Care DQ0 - DQ7 01h 00h 6/29 M29F002T, M29F002NT, M29F002B Write. Write operations are used to give Instruction Commands to the memory or to latch input data to be programmed. A write operationis initiated when Chip Enable E is Low and Write Enable W is Low with Output Enable G High. Addresses are latched on the falling edge of W or E whicheveroccurs last. Commandsand InputData are latchedon the rising edge of W or E whichever occurs first. Output Disable. The data outputs are high impedance when the Output Enable G is High with Write Enable W High. Standby. The memory is in standby when Chip Enable E is High and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable G or Write Enable W inputs. Automatic Standby. After 150ns of bus inactivity and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumption is reduced to the CMOS standby value, while outputs still drive the bus. Electronic Signature. Two codes identifying the manufacturerand the device can be read from the memory. These codes allow programming equipment or applications to automatically match their interface to the characteristics of the M29F002. The Electronic Signature is output by a Read operation when the voltage applied to A9 is at VID and address input A1 is Low. The manufacturer code is output when the Address input A0 is Low and the device code when this input is High. Other Address inputs are ignored. The Electronic Signature can also be read, without raising A9 to VID, by giving the memory the Instruction AS. Block Protection. Each block can be separately protected against Program or Erase on programming equipment. Block protection provides additional data security, as it disables all program or erase operations. This mode is activated when both A9 and G are raised to VID and an address in the block is applied on A13-A17. The Block Protection algorithm is shown in Figure 14. Block protection is initiated on the edge of W falling to VIL. Then after a delay of 100µs, the edge of W rising to VIH ends the protection operations. Block protection verify is achieved by bringing G, E, A0 and A6 to VIL and A1 to VIH, while W is at VIH and A9 at VID. Underthese conditions, reading the dataoutput will yield 01h if the block defined by the inputs on A13-A17 is protected. Any attempt to program or erase a protected block will be ignored by the device. Block Temporary Unprotection. This feature is available on M29F002T and M29F002B only. Any previously protected block can be temporarily unprotected in order to change stored data. The temporaryunprotectionmode is activated by bringing RPNC to VID. During the temporary unprotection mode the previously protected blocks are unprotected.A block can be selected and data can be modified by executing the Erase or Program instruction with the RPNC signal held at VID. When RPNC is returned to VIH, all the previously protected blocks are again protected. Block Unprotection. All protected blocks can be unprotected on programming equipment to allow updating of bit contents. All blocks must first be protected before the unprotection operation. Block unprotection is activated when A9, G and E are at VID and A12, A15 at VIH. The Block Unprotection algorithm is shown in Figure 15. Unprotection is initiated by the edge of W fallingto VIL. Aftera delay of 10ms, the unprotection operation is ended by rising W to VIH. Unprotection verify is achieved by bringing G and E to VIL while A0 is at VIL, A6 and A1 are at VIH and A9 remains at VID. In these conditions, reading the output data will yield 00h if the block defined by the inputs A13-A17 has been succesfullyunprotected.Each block must be separately verified by giving its address in order to ensure that it has been unprotected. INSTRUCTIONS AND COMMANDS The Command Interface latches commands written to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Protection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences. Table 7. Commands Hex Code 00h 10h 20h 30h 80h 90h A0h B0h F0h Command Invalid/Reserved Chip Erase Confirm Reserved Block Erase Resume/Confirm Set-up Erase Read Electronic Signature/ Block Protection Status Program Erase Suspend Read Array/Reset 7/29 M29F002T, M29F002NT, M29F002B Table 8. Instructions (1) Mne. Instr. Cyc. 1+ Addr. Data 3+ Addr. (3,7) Data AS (4) Addr. Auto Select 3+ Data Addr. (3,7) PG Program 4 Data Addr. Data CE Chip Erase 6 Addr. Data ES (10) Erase Suspend Erase Resume 1 Addr. (3,7) Data 1 Addr. Data (3,7) (3,7) (3,7) (3,7) (3,7) 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc. X F0h 555h AAh 555h AAh 555h AAh 555h AAh 555h AAh X B0h X 30h AAAh 55h AAAh 55h AAAh 55h AAAh 55h AAAh 55h 555h F0h 555h 90h 555h A0h 555h 80h 555h 80h Read Memory Array until a new write cycle is initiated. Read Electronic Signature or Block Protection Status until a new write cycle is initiated. See Note 5 and 6. Program Address Read Data Polling or Toggle Bit until Program completes. Program Data 555h AAh 555h AAh AAAh 55h AAAh 55h Block Additional Address Block (8) 30h 555h 10h 30h Note 9 Read Memory Array until a new write cycle is initiated. RD (2,4) Read/Reset Memory Array BE Block Erase 6 Read until Toggle stops, then read all the data needed from any Block(s) not being erased then Resume Erase. Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time ER Notes: 1. Commands not interpreted in this table will default to read array mode. 2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting any new operation (see Table 14 and Figure 9). 3. X = Don’t Care. 4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the command cycles. 5. Signature Address bits A0, A1 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1 at VIL will output Device code. 6. Block Protection Address: A0 at VIL, A1 at VIH and A13-A17 within the Block will output the Block Protection status. 7. For Coded cycles address inputs A12-A17 are don’t care. 8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 9. Read Data Polling, Toggle bits or RB until Erase completes. 10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. The instructions require from 1 to 6 cycles, the first or first three of which are always write operations used to initiate the instruction.They are followed by either further write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any invalid combination of commands will reset the device to Read Array. The increased number of cycles has been chosen to assure maximum data security. Instructions are initialised by two initial Coded cycles which unlock the Command Interface. In addition, for Erase, instruction confirmation is again preceded by the two Coded cycles. Status Register Bits P/E.C. status is indicated during execution by Data Polling on DQ7, detection of Toggle on DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits. Any read attempt during Program or Erase command execution will automatically output these five Status Register bits. The P/E.C. automatically sets bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1 and DQ4) are reserved for future use and should be masked. See Tables 9 and 10. 8/29 M29F002T, M29F002NT, M29F002B Table 9. Status Register Bits DQ Name Logic Level ’1’ 7 Data Polling ’0’ DQ DQ ’-1-0-1-0-1-0-1-’ 6 Toggle Bit DQ ’-1-1-1-1-1-1-1-’ ’1’ ’0’ 4 Reserved ’1’ Erase Timeout Period Expired Erase Timeout Period On-going Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ’1’). Program on-going, Erase on-going on another block or Erase Complete Erase Suspend read on non Erase Suspend block P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES). An additional block to be erased in parallel can be entered to the P/E.C. Definition Erase Complete or erase block in Erase Suspend Erase On-going Program Complete or data of non erase block during Erase Suspend Program On-going Erase or Program On-going Program Complete Erase Complete or Erase Suspend on currently addressed block Program or Erase Error Program or Erase On-going Successive reads output complementary data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged. This bit is set to ’1’ in the case of Programming or Erase failure. Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. Note 5 Error Bit 3 Erase Time Bit ’0’ ’-1-0-1-0-1-0-1-’ 2 Toggle Bit 1 Indicates the erase status and allows to identify the erased block DQ 1 0 Reserved Reserved Notes: Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations. Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7. During Erase operation, it outputs a ’0’. After completion of the operation, DQ7 will output the bit last programmed or a ’1’ after erasing. Data Polling is valid and only effective during P/E.C. operation, that is after the fourth W pulse for programming or after the sixth W pulse for erase. It must be performed at the address being programmed or at an address within the block being erased. If all the blocks selected for erasure are protected, DQ7 will be set to ’0’ for about 100µs, and then return to the previous addressed memory data value. 9/29 M29F002T, M29F002NT, M29F002B Table 10. Polling and Toggle Bits Mode Program Erase Erase Suspend Read (in Erase Suspend block) Erase Suspend Read (outside Erase Suspend block) Erase Suspend Program DQ7 DQ7 0 1 DQ6 Toggle Toggle 1 DQ2 1 Note 1 Toggle DQ7 DQ7 DQ6 Toggle DQ2 N/A Note: 1. Toggle if the address is within a block being erased. ’1’ if the address is within a block not being erased. See Figure 11 for the Data Polling flowchart and Figure 10 for the Data Polling waveforms. DQ7 will also flag the Erase Suspend mode by switching from ’0’ to ’1’ at the start of the Erase Suspend. In order to monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operationin Erase Suspend mode, DQ7 will output ’1’ if the read is attempted on a blockbeing erased and the datavalue on other blocks. During Program operation in Erase Suspend Mode, DQ7 will have the same behaviour as in the normal program execution outside of the suspend mode. Toggle Bit (DQ6). When Programming or Erasing operations are in progress, successive attempts to read DQ6 will output complementarydata. DQ6 will toggle following toggling of either G, or E when G is low. The operation is completed when two successive reads yield the same output data. The next read will output the bit last programmed or a ’1’ after erasing. The toggle bit DQ6 is valid only during P/E.C. operations, that is after the fourth W pulse for programming or after the sixth W pulse for Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then return back to Read. DQ6 will be set to ’1’ if a Read operationis attemptedon an Erase Suspendblock. When erase is suspended DQ6 will toggle during programming operations in a block different to the block in Erase Suspend. Either E or G toggling will cause DQ6 to toggle. See Figure 12 for Toggle Bit flowchart and Figure 13 for Toggle Bit waveforms. Toggle Bit (DQ2). This toggle bit, together with DQ6, can be used to determine the device status during the Erase operations. It can also be used to identify the block being erased. During Erase or Erase Suspend a read from a block being erased will cause DQ2 to toggle. A read from a block not being erased will set DQ2 to ’1’ during erase and to DQ2 during Erase Suspend. During Chip Erase a read operation will cause DQ2 to toggle as all blocks are being erased. DQ2 will be set to ’1’ during program operation and when erase is complete. After erase completion and if the error bit DQ5 is set to ’1’, DQ2 will toggle if the faulty block is addressed. Error Bit (DQ5). This bit is set to ’1’ by the P/E.C. when there is a failure of programming, block erase, or chip erase that results in invalid data in the memory block. In caseof an error in block erase or program, the block in which the error occured or to which the programmed data belongs, must be discarded. The DQ5 failure condition will also appear if a user tries to program a ’1’ to a location that is previously programmed to ’0’. Other Blocks may stillbe used.The error bit resets after a Read/Reset (RD) instruction. In case of success of Program or Erase, the error bit will be set to ’0’ . Erase Timer Bit (DQ3). This bit is set to ’0’ by the P/E.C. when the last block Erase command has been entered to the Command Interface and it is awaiting the Erase start. When the erase timeout period is finished, after 50µs to 120µs, DQ3 returns to ’1’. Coded Cycles The two Coded cycles unlock the Command Interface. They are followed by an input command or a confirmation command. The Coded cycles consist of writing the data AAh at address 555h during the first cycle. During the second cycle the Coded cycles consist of writing the data 55h at address AAAh. The address lines A0 to A11 are valid, other address lines are ’don’t care’. The Coded cycles happen on first and second cycles of the command write or on the fourth and fifth cycles. Instructions See Table 8. Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It canbe optionallypreceded by the two Coded cycles. Subsequentread operationswill read the memory array addressed and output the data read. A wait state of 10µs is necessary after Read/Reset prior to any valid read if the memory was in an Erase mode when the RD instruction is given. 10/29 M29F002T, M29F002NT, M29F002B Table 11. AC Measurement Conditions High Speed Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages ≤ 10ns 0 to 3V 1.5V Standard ≤ 10ns 0.45V to 2.4V 0.8V and 2V Figure 4. AC Testing Input Output Waveform Figure 5. AC Testing Load Circuit 1.3V High Speed 3V 1.5V 0V DEVICE UNDER TEST 2.0V 0.8V AI01275B 1N914 3.3kΩ Standard 2.4V OUT CL 0.45V CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance AI01276B Table 12. Capacitance (1) (TA = 25 °C, f = 1 MHz ) Symbol C IN C OUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF Note: 1. Sampled only, not 100% tested. Auto Select (AS) Instruction. This instruction uses the two Coded cycles followed by one write cycle giving the command 90h to address 555h for command set-up. Asubsequentread will output the manufacturer code and the device code or the block protection status depending on the levels of A0 and A1. The manufacturer code, 20h, is output when the addresses lines A0 and A1 are Low, the device code is output when A0 is High with A1 Low. The AS instruction also allows access to the block protectionstatus. After givingthe AS instruction, A0 is set to VIL with A1 at VIH, while A13-A17 define the address of the block to be verified. A read in these conditions will output a 01h if the block is protected and a 00h if the block is not protected. Program (PG) Instruction. This instruction uses four write cycles. The Program command A0h is written to address 555h on the third cycle after two Coded cycles. A fourth write operation latches the Address on the falling edge of W or E and the Data to be written on the rising edge and starts the P/E.C. Read operations output the Status Register bits after the programming has started. Memory programming is made only by writing ’0’ in place of ’1’. Status bits DQ6 and DQ7 determine if programming is on-goingand DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the address being programmed. 11/29 M29F002T, M29F002NT, M29F002B Table 13. DC Characteristics (TA = 0 to 70°C or –40 to 85°C; VCC = 5V ± 10%) Symbol ILI (2) Parameter Input Leakage Current Output Leakage Current RPNC Leakage Current High RPNC Leakage Current Low Supply Current (Read) TTL Byte Supply Current (Standby) TTL Supply Current (Standby) CMOS Supply Current (Program or Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL Output High Voltage CMOS Test Condition 0V ≤ VIN ≤ VCC 0V ≤ VOUT ≤ VCC RPNC = VCC RPNC = VSS E = VIL, G = VIH, f = 6MHz E = VIH E = VCC ± 0.2V Byte program, Block or Chip Erase in progress Min Max ±1 ±1 ±1 Unit µA µA µA µA mA mA µA mA V V V V V ILO ILR1 ILR2 ICC1 ICC2 ICC3 ICC4 (1) VIL VIH VOL VOH VID IID VLKO –0.2 –10 20 1 100 20 –0.5 2 IOL = 5.8mA IOH = –2.5mA IOH = –100µA 2.4 VCC –0.4V 11.5 A9, E, G or RPNC = VID 3.2 0.8 VCC + 0.5 0.45 A9, E, G, RPNC High Voltage A9, E, G, RPNC High Current Supply Voltage (Erase and Program lock-out) 12.5 100 4.2 V µA V Note: 1. Sampled only, not 100% tested. 2. Except RPNC. Block Erase (BE) Instruction. This instruction uses a minimum of six write cycles. The Erase Set-up command 80h is written to address 555h on third cycle after the two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after another two Coded cycles. During the input of the second command an address within the block to be erased is given and latched into the memory. Additional block Erase Confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without further Coded cycles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for other blocks must be given within this delay. The input of a new Erase Confirm command will restart thetimeout period. The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running,if DQ3 is ’1’, the timeout has expired and the P/E.C. is erasing the Block(s). If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts, and the device is reset to Read Array. It is not necessary to program the block with 00h as the P/E.C. will do this automatically before to erasingto FFh. Read operations after the sixth rising edge of W or E output the status register status bits. During the executionof the erase by the P/E.C.,the memory accepts only the Erase Suspend ES and Read/Reset RD instructions. Data Polling bit DQ7 returns ’0’ while the erasure is in progress and ’1’ when it has completed. The Toggle bit DQ2 and DQ6 toggle during the erase operation. They stop when erase is completed. After completion the Status Register bit DQ5 returns’1’ if there has been an erase failure. In such a situation, the Toggle bit DQ2 can be used to determine which block is not correctly erased. In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. 12/29 M29F002T, M29F002NT, M29F002B Table 14. Read AC Characteristics (TA = 0 to 70°C or –40 to 85°C) M29F002T / M29F002NT / M29F002B -70 Symbol Alt Parameter Test Condition -90 -120 Unit VCC = 5V ± 10% VCC = 5V ± 10% VCC = 5V ± 10% Standard Interface Min Max Standard Interface Min 90 70 0 70 0 30 0 20 0 20 0 10 50 500 50 500 0 10 50 500 0 20 0 10 0 20 0 30 0 35 0 30 0 90 0 50 90 0 120 Max Standard Interface Min 120 120 Max tAVAV tAVQV tELQX (1) tELQV (2) tGLQX (1) tRC tACC tLZ tCE tOLZ tOE tOH tHZ tOH tDF tOH Address Valid to Next Address Valid Address Valid to Output Valid Chip Enable Low to Output Transition Chip Enable Low to Output Valid Output Enable Low to Output Transition Output Enable Low to Output Valid Chip Enable High to Output Transition Chip Enable High to Output Hi-Z Output Enable High to Output Transition Output Enable High to Output Hi-Z Address Transition to Output Transition RPNC Low to Read Mode RPNC High to Chip Enable Low RPNC Pulse Width E = VIL, G = VIL E = VIL, G = VIL G = VIL G = VIL E = VIL E = VIL G = VIL G = VIL E = VIL E = VIL E = VIL, G = VIL 70 ns ns ns ns ns ns ns ns ns ns ns µs ns ns tGLQV (2) tEHQX tEHQZ (1) tGHQX tGHQZ (1) tAXQX tPLEL (1,3) tREADY tPHEL tPLPX tRSP tRP Notes: 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. 3. To be considered only if the Reset pulse is given while the memory is in Erase mode. 13/29 14/29 tAVAV VALID tAVQV tELQV tAXQX tEHQZ tELQX tEHQX tGLQV tGLQX VALID tGHQX tGHQZ ADDRESS VALID AND CHIP ENABLE OUTPUT ENABLE DATA VALID AI02082 Figure 6. Read Mode AC Waveforms M29F002T, M29F002NT, M29F002B A0-A17 E G DQ0-DQ7 Note: Write Enable (W) = High M29F002T, M29F002NT, M29F002B Table 15. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70°C or –40 to 85°C) M29F002T / M29F002NT / M29F002B -70 Symbol Alt Parameter -90 -120 Unit VCC = 5V ± 10% VCC = 5V ± 10% VCC = 5V ± 10% Standard Interface Min Max Standard Interface Min 90 0 45 45 0 0 20 5 45 0 50 0 500 500 Max Standard Interface Min 120 0 50 50 0 0 20 5 50 0 50 0 500 500 Max tAVAV tELWL tWLWH tDVWH tWHDX tWHEH tWHWL tAVWL tWLAX tGHWL tVCHEL tWHGL tPHPHH (1,2) tPLPX tWC tCS tWP tDS tDH tCH tWPH tAS tAH Address Valid to Next Address Valid Chip Enable Low to Write Enable Low Write Enable Low to Write Enable High Input Valid to Write Enable High Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Address Valid to Write Enable Low Write Enable Low to Address Transition Output Enable High to Write Enable Low 70 0 35 30 0 0 20 5 45 0 50 0 500 500 ns ns ns ns ns ns ns ns ns ns µs ns ns ns tVCS tOEH tVIDR tRP VCC High to Chip Enable Low Write Enable High to Output Enable Low RPNC Rise Time to VID RPNC Pulse Width Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. ChipErase (CE) Instruction. This instructionuses six write cycles. The Erase Set-up command 80h is written to address 555h on the third cycle after the two Coded cycles. The Chip Erase Confirm command 10h is similarly written on the sixth cycle after another two Coded cycles. If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts and the device is reset to Read Array. It is not necessary to program the array with 00h first as the P/E.C. will automaticallydo this before erasing it to FFh. Read operations after the sixth rising edge of W or E output the Status Register bits. During the executionof theerase by the P/E.C.,Data Polling bit DQ7 returns ’0’, then ’1’ on completion. The Toggle bits DQ2 and DQ6 toggle during erase operation and stop when erase is completed. After completionthe Status Register bit DQ5 returns’1’ if there has been an Erase Failure. 15/29 M29F002T, M29F002NT, M29F002B Figure 7. Write AC Waveforms, W Controlled tAVAV A0-A17 VALID tWLAX tAVWL E tELWL G tGHWL W tWHWL tDVWH DQ0-DQ7 VALID tWHDX tWLWH tWHGL tWHEH VCC tVCHEL AI02083 Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruction which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops togglingwhen the P/E.C. is suspended.The Toggle bits will stop toggling between 0.1µs and 15µs after the Erase Suspend (ES) command has been written. The device will then automatically be set to Read Memory Array mode. When erase is suspended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instructions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is beingprogrammed. ARead/Reset 16/29 command will definitively abort erasure and result in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. POWER SUPPLY Power Up The memory Command Interface is reset on power up to Read Array. Either E or W must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of E and W. Any write cycle initiation is blocked when Vcc is below VLKO. Supply Rails Normal precautions must be taken for supply voltage decoupling; each device in a system should have the VCC rail decoupledwith a 0.1µF capacitor close to the VCC and VSS pins. The PCB trace widths should be sufficient to carry the VCC program and erase currents required. M29F002T, M29F002NT, M29F002B Table 16. Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70°C or –40 to 85°C) M29F002T / M29F002NT / M29F002B -70 Symbol Alt Parameter VCC = 5V ± 10% Standard Interface Min tAVAV tWLEL tELEH tDVEH tEHDX tEHWH tEHEL tAVEL tELAX tGHEL tVCHWL tEHGL tPHPHH (1,2) tPLPX tVCS tOEH tVIDR tRP tWC tWS tCP tDS tDH tWH tCPH tAS tAH Address Valid to Next Address Valid Write Enable Low to Chip Enable Low Chip Enable Low to Chip Enable High Input Valid to Chip Enable High Chip Enable High to Input Transition Chip Enable High to Write Enable High Chip Enable High to Chip Enable Low Address Valid to Chip Enable Low Chip Enable Low to Address Transition Output Enable High Chip Enable Low VCC High to Write Enable Low Chip Enable High to Output Enable Low RPNC Rise TIme to VID RPNC Pulse Width 70 0 35 30 5 0 20 0 45 0 50 0 500 500 Max -90 VCC = 5V ± 10% Standard Interface Min 90 0 45 45 5 0 20 0 45 0 50 0 500 500 Max -120 VCC = 5V ± 10% Standard Interface Min 120 0 50 50 5 0 20 0 50 0 50 0 500 500 Max ns ns ns ns ns ns ns ns ns ns µs ns ns ns Unit Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 17/29 M29F002T, M29F002NT, M29F002B Figure 8. Write AC Waveforms, E Controlled tAVAV A0-A17 VALID tELAX tAVEL W tWLEL G tGHEL E tEHEL tDVEH DQ0-DQ7 VALID tEHDX tELEH tEHGL tEHWH VCC tVCHWL AI02084 Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related E tPHEL RPNC tPLPX tPHPHH tPLEL AI02085 18/29 M29F002T, M29F002NT, M29F002B Table 17. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C or –40 to 85°C) M29F002T / M29F002NT / M29F002B Symbol -70 Alt Parameter VCC = 5V ± 10% Standard Interface Min Write Enable High to DQ7 Valid (Program, W Controlled) Write Enable High to DQ7 Valid (Chip Erase, W Controlled) Chip Enable High to DQ7 Valid (Program, E Controlled) Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) tQ7VQV Q7 Valid to Output Valid (Data Polling) Write Enable High to Output Valid (Program) Write Enable High to Output Valid (Chip Erase) Chip Enable High to Output Valid (Program) Chip Enable High to Output Valid (Chip Erase) 10 1.0 10 1.0 10 1.0 10 1.0 Max 2400 30 2400 30 30 2400 30 2400 30 10 1.0 10 1.0 -90 VCC = 5V ± 10% Standard Interface Min 10 1.0 10 1.0 Max 2400 30 2400 30 35 2400 30 2400 30 10 1.0 10 1.0 -120 VCC = 5V ± 10% Standard Interface Min 10 1.0 10 1.0 Max 2400 30 2400 30 50 2400 30 2400 30 µs sec µs sec ns µs sec µs sec Unit tWHQ7V tEHQ7V tWHQV tEHQV Note: 1. All other timings are defined in Read AC Characteristics table. 19/29 20/29 DATA OUTPUT VALID ADDRESS (WITHIN BLOCKS) tAVQV tELQV tEHQ7V tGLQV tWHQ7V DQ7 VALID IGNORE tQ7VQV VALID DATA POLLING READ CYCLES DATA POLLING (LAST) CYCLE MEMORY ARRAY READ CYCLE AI02086 A0-A17 M29F002T, M29F002NT, M29F002B E Figure 10. Data Polling DQ7 AC Waveforms G W DQ7 DQ0-DQ6 LAST WRITE CYCLE OF PROGRAM OR ERASE INSTRUCTION M29F002T, M29F002NT, M29F002B Figure 11. Data Polling Flowchart Figure 12. Data Toggle Flowchart START START READ DQ5 & DQ7 at VALID ADDRESS READ DQ2, DQ5 & DQ6 DQ7 = DATA NO NO YES DQ2, DQ6 = TOGGLE YES NO NO DQ5 =1 YES READ DQ7 DQ5 =1 YES READ DQ2, DQ6 DQ7 = DATA NO FAIL YES DQ2, DQ6 = TOGGLE YES PASS FAIL NO PASS AI01369 AI01873 Table 18. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C) M29F002T / M29F002NT / M29F002B Parameter Min Chip Erase (Preprogrammed) Chip Erase Boot Block Erase Parameter Block Erase Main Block (32Kb) Erase Main Block (64Kb) Erase Chip Program (Byte) Byte Program Program/Erase Cycles (per Block) 100,000 Typ 0.7 2.4 0.6 0.5 0.9 1.0 3.2 11 3.2 11 Typical after 100k W/E Cycles 0.9 2.5 Unit sec sec sec sec sec sec sec µs cycles 21/29 22/29 VALID tEHQV tAVQV tELQV tGLQV tWHQV STOP TOGGLE VALID IGNORE VALID DATA TOGGLE READ CYCLE DATA TOGGLE READ CYCLE MEMORY ARRAY READ CYCLE AI02087 A0-A17 M29F002T, M29F002NT, M29F002B E G Figure 13. Data Toggle DQ6, DQ2 AC Waveforms W DQ6,DQ2 DQ0-DQ1,DQ3-DQ5,DQ7 LAST WRITE CYCLE OF PROGRAM OF ERASE INSTRUCTION Note: All other timings are as a normal Read cycle. M29F002T, M29F002NT, M29F002B Figure 14. Block Protection Flowchart START BLOCK ADDRESS on A13-A17 W = VIH Set-up n=0 G, A9 = VID, E = VIL Wait 4µs W = VIL Protect Wait 100µs W = VIH E, G = VIH Verify VERIFY BLOCK PROTECTION A0, A6 = VIL; A1 = VIH; A9 = VID A13-A17 IDENTIFY BLOCK E = VIL Wait 4µs G = VIL Wait 60ns VERIFY BLOCK PROTECT STATUS DATA = 01h YES A9 = VIH PASS NO ++n = 25 YES A9 = VIH FAIL NO AI02088B 23/29 M29F002T, M29F002NT, M29F002B Figure 15. All Blocks Unprotecting Flowchart START PROTECT ALL BLOCKS n=0 W = VIH Set-up E, G, A9 = VID A12, A15 = VIH Wait 4µs W = VIL Wait 10ms W = VIH E, G = VIH Verify Unprotect E, A0 = VIL; A1, A6 = VIH; A9 = VID A13-A17 IDENTIFY BLOCK NEXT BLOCK Wait 4µs G = VIL Wait 60ns VERIFY BLOCK PROTECT STATUS NO DATA = 00h YES NO ++n = 1000 YES A9 = VIH FAIL LAST BLK. YES A9 = VIH PASS NO AI02089C 24/29 M29F002T, M29F002NT, M29F002B ORDERING INFORMATION SCHEME Example: M29F002T -70 X K 1 TR Operating Voltage F 5V Option TR Tape & Reel Packing Array Matrix T B NT Top Boot Bottom Boot Top Boot without RPNC function Speed -70 70ns -90 90ns -120 120ns Power Supplies blank VCC ± 10% X VCC ± 5% P K N Package PDIP32 PLCC32 TSOP32 (8 x 20 mm) Temp. Range 1 6 0 to 70 °C –40 to 85 °C Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further informationon any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. 25/29 M29F002T, M29F002NT, M29F002B PDIP32 - 32 pin Plastic DIP, 600 mils width Symb Typ A A1 A2 B B1 C D D2 E E1 e1 eA eB L S α N 2.54 15.24 38.10 15.24 1.52 mm Min – 0.38 3.56 0.38 – 0.20 41.78 – – 13.59 – – 15.24 3.18 1.78 0° 32 Max 5.08 – 4.06 0.51 – 0.30 42.04 – – 13.84 – – 17.78 3.43 2.03 10° 0.100 0.600 1.500 0.600 0.060 Typ inches Min – 0.015 0.140 0.015 – 0.008 1.645 – – 0.535 – – 0.600 0.125 0.070 0° 32 Max 0.200 – 0.160 0.020 – 0.012 1.655 – – 0.545 – – 0.700 0.135 0.080 10° A2 A1 B1 B D2 D S N A L α eA eB C e1 E1 1 E PDIP Drawing is not to scale. 26/29 M29F002T, M29F002NT, M29F002B PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular Symb Typ A A1 A2 B B1 D D1 D2 E E1 E2 e F R N Nd Ne CP 0.89 1.27 mm Min 2.54 1.52 – 0.33 0.66 12.32 11.35 9.91 14.86 13.89 12.45 – 0.00 – 32 7 9 0.10 Max 3.56 2.41 0.38 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 – 0.25 – 0.035 0.050 Typ inches Min 0.100 0.060 – 0.013 0.026 0.485 0.447 0.390 0.585 0.547 0.490 – 0.000 – 32 7 9 0.004 Max 0.140 0.095 0.015 0.021 0.032 0.495 0.455 0.430 0.595 0.555 0.530 – 0.010 – D D1 1N A1 A2 B1 Ne E1 E F 0.51 (.020) D2/E2 B e 1.14 (.045) Nd A R CP PLCC Drawing is not to scale. 27/29 M29F002T, M29F002NT, M29F002B TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm Symb Typ A A1 A2 B C D D1 E e L α N CP 0.50 0.05 0.95 0.15 0.10 19.80 18.30 7.90 0.50 0° 32 0.10 mm Min Max 1.20 0.15 1.05 0.27 0.21 20.20 18.50 8.10 0.70 5° 0.020 0.002 0.037 0.006 0.004 0.780 0.720 0.311 0.020 0° 32 0.004 Typ inches Min Max 0.047 0.007 0.041 0.011 0.008 0.795 0.728 0.319 0.028 5° A2 1 N e E B N/2 D1 D A CP DIE C TSOP-a Drawing is not to scale. A1 α L 28/29 M29F002T, M29F002NT, M29F002B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. © 1998 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 29/29