M29W800DB90N6F

M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W800DT: 22D7h – Bottom Device Code M29W800DB: 225Bh Figure 1. Packages SO44 (M) TSOP48 (N) 12 x 20mm FBGA TFBGA48 (ZA) 6 x 9 mm FBGA TFBGA48 (ZE) 6 x 8mm September 2004 1/42 M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Table 1. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 SO Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Block Addresses (x8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block Addresses (x16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A18). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ8-DQ14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Input/Output or Address Input (DQ15A-1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset/Block Temporary Unprotect (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Ready/Busy Output (RB). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 VCC Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Special Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Block Protection and Blocks Unprotection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 2. Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 3. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Read/Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Auto Select Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Unlock Bypass Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/42 M29W800DT, M29W800DB Unlock Bypass Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Chip Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Block Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Erase Resume Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Block Protect and Chip Unprotect Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 4. Commands, 16-bit mode, BYTE = VIH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 5. Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 6. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 16 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Polling Bit (DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Toggle Bit (DQ6).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Error Bit (DQ5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Alternative Toggle Bit (DQ2).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 7. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 8. Data Polling Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 9. Data Toggle Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 9. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 10.AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 11.AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 10. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 11. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 12.Read Mode AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 12. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 13.Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 13. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 14.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 14. Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 15.Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 15. Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 25 PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 16.SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline . . . . . . . . 26 Table 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data 26 Figure 17.TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline. . . . . . . . . 27 Table 17. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 27 Figure 18.TFBGA48 6x9mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline . . . . 28 3/42 M29W800DT, M29W800DB Table 18. TFBGA48 6x9mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data. . 28 Figure 19.TFBGA48 6x8mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline . . . . 29 Table 19. TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data. . 29 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 20. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 21. Top Boot Block Addresses, M29W800DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 22. Bottom Boot Block Addresses, M29W800DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 APPENDIX B.COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 23. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 24. CFI Query Identification String. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 26. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 27. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 28. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 APPENDIX C.BLOCK PROTECTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 In-System Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 29. Programmer Technique Bus Operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Figure 20.Programmer Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Figure 21.Programmer Equipment Chip Unprotect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Figure 22.In-System Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Figure 23.In-System Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 30. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 4/42 M29W800DT, M29W800DB SUMMARY DESCRIPTION The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Figures 6 and 7, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32K is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in SO44, TSOP48 (12 x 20mm), TFBGA48 6 x 9mm (0.8mm pitch) and TFBGA48 6 x 8mm (0.8mm pitch) packages. The memory is supplied with all the bits erased (set to ’1’). Figure 2. Logic Diagram Table 1. Signal Names A0-A18 Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output (not available on SO44 package) Byte/Word Organization Select Supply Voltage Ground Not Connected Internally VCC DQ0-DQ7 DQ8-DQ14 19 A0-A18 W E G RP BYTE M29W800DT M29W800DB 15 DQ0-DQ14 DQ15A–1 DQ15A–1 E G W RB RP RB BYTE VSS AI05470B VCC VSS NC 5/42 M29W800DT, M29W800DB Figure 3. SO Connections Figure 4. TSOP Connections RP A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 44 43 2 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 11 M29W800DT 34 12 M29W800DB 33 13 32 14 31 15 30 16 29 28 17 27 18 26 19 25 20 21 24 22 23 W NC A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC AI05462b A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 M29W800DT 37 13 M29W800DB 36 24 25 AI05461 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 6/42 M29W800DT, M29W800DB Figure 5. TFBGA Connections (Top view through package) 1 2 3 4 5 6 A A3 A7 RB W A9 A13 B A4 A17 NC RP A8 A12 C A2 A6 A18 NC A10 A14 D A1 A5 NC NC A11 A15 E A0 DQ0 DQ2 DQ5 DQ7 A16 F E DQ8 DQ10 DQ12 DQ14 BYTE G G DQ9 DQ11 VCC DQ13 DQ15 A–1 H VSS DQ1 DQ3 DQ4 DQ6 VSS AI00656 7/42 M29W800DT, M29W800DB Figure 6. Block Addresses (x8) M29W800DT Top Boot Block Addresses (x8) M29W800DB Bottom Boot Block Addresses (x8) FFFFFh 16 KByte FC000h FBFFFh 8 KByte FA000h F9FFFh 8 KByte F8000h F7FFFh 32 KByte F0000h EFFFFh 64 KByte E0000h FFFFFh 64 KByte F0000h EFFFFh 64 KByte E0000h Total of 15 64 KByte Blocks 1FFFFh 64 KByte 10000h 0FFFFh 32 KByte Total of 15 64 KByte Blocks 08000h 07FFFh 8 KByte 06000h 05FFFh 8 KByte 04000h 03FFFh 16 KByte 00000h 1FFFFh 64 KByte 10000h 0FFFFh 64 KByte 00000h AI05463 Note: Also see APPENDIX A., Tables 21 and 22 for a full listing of the Block Addresses. 8/42 M29W800DT, M29W800DB Figure 7. Block Addresses (x16) M29W800DT Top Boot Block Addresses (x16) M29W800DB Bottom Boot Block Addresses (x16) 7FFFFh 8 KWord 7E000h 7DFFFh 4 KWord 7D000h 7CFFFh 4 KWord 7C000h 7BFFFh 16 KWord 78000h 77FFFh 32 KWord 70000h 7FFFFh 32 KWord 78000h 77FFFh 32 KWord 70000h Total of 15 32 KWord Blocks 0FFFFh 32 KWord 08000h 07FFFh 16 KWord Total of 15 32 KWord Blocks 04000h 03FFFh 4 KWord 03000h 02FFFh 4 KWord 02000h 01FFFh 8 KWord 00000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h AI05464 Note: Also see APPENDIX A., Tables 21 and 22 for a full listing of the Block Addresses. 9/42 M29W800DT, M29W800DB SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram, and Table 1., Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ8-DQ14). The Data Inputs/Outputs output the data stored at the selected address during a Bus Read operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored. Data Input/Output or Address Input (DQ15A1). When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except when stated explicitly otherwise. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is High, VIH, all other pins are ignored. Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, VIL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 15. and Figure 15., Reset/ Block Temporary Unprotect AC Waveforms, for more details. Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Table 15., Reset/ Block Temporary Unprotect AC Characteristics and Figure 15., Reset/Block Temporary Unprotect AC Waveforms. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in 8-bit mode, when it is High, VIH, the memory is in 16-bit mode. VCC Supply Voltage. The VCC Supply Voltage supplies the power for all operations (Read, Program, Erase etc.). The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, ICC3. VSS Ground. The VSS Ground is the reference for all voltage measurements. 10/42 M29W800DT, M29W800DB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 12., Read Mode AC Waveforms, and Table 12., Read AC Characteristics for details of when the output becomes valid. Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desired address on the Address Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus Write operation. See Figures 13 and 14, Write AC Waveforms, and Tables 13 and 14, Write AC Characteristics, for details of the timing requirements. Output Disable. The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH. Standby. When Chip Enable is High, VIH, the memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedTable 2. Bus Operations, BYTE = VIL Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code Note: X = VIL or VIH. ance state. To reduce the Supply Current to the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the Standby current level see Table 11., DC Characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC3, for Program or Erase operations until the operation completes. Automatic Standby. If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 150ns or more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations. Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 2 and 3, Bus Operations. Block Protection and Blocks Unprotection. Each block can be separately protected against accidental Program or Erase. Protected blocks can be unprotected to allow data to be changed. There are two methods available for protecting and unprotecting the blocks, one for use on programming equipment and the other for in-system use. Block Protect and Chip Unprotect operations are described in APPENDIX C. E VIL VIL X VIH VIL VIL G VIL VIH VIH X VIL VIL W VIH VIL VIH X VIH VIH Address Inputs DQ15A–1, A0-A18 Cell Address Command Address X X A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH Data Inputs/Outputs DQ14-DQ8 Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DQ7-DQ0 Data Output Data Input Hi-Z Hi-Z 20h D7h (M29W800DT) 5Bh (M29W800DB) 11/42 M29W800DT, M29W800DB Table 3. Bus Operations, BYTE = VIH Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code Note: X = VIL or VIH. E VIL VIL X VIH VIL VIL G VIL VIH VIH X VIL VIL W VIH VIL VIH X VIH VIH Address Inputs A0-A18 Cell Address Command Address X X A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH Data Inputs/Outputs DQ15A–1, DQ14-DQ0 Data Output Data Input Hi-Z Hi-Z 0020h 22D7h (M29W800DT) 225Bh (M29W800DB) COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 4, or 5, depending on the configuration that is being used, for a summary of the commands. Read/Reset Command. The Read/Reset command returns the memory to its Read mode where it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. The Read/Reset Command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to read mode. Once the program or erase operation has started the Read/Reset command is no longer accepted. The Read/Reset command will not abort an Erase operation when issued while in Erase Suspend. Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are required to issue the Auto Select command. Once the Auto Select command is issued the memory remains in Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/ Reset commands are accepted in Auto Select mode, all other commands are ignored. From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH. The Manufacturer Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The other address bits may be set to either VIL or VIH. The Device Code for the M29W800DT is 22D7h and for the M29W800DB is 225Bh. The Block Protection Status of each block can be read using a Bus Read operation with A0 = VIL, A1 = VIH, and A12-A18 specifying the address of the block. The other address bits may be set to either VIL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output. Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. During the program operation the memory will ignore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in Table 6. Bus Read operations during the program operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. 12/42 M29W800DT, M29W800DB After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory. When the access time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these commands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been issued the memory will only accept the Unlock Bypass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode. Unlock Bypass Program Command. The Unlock Bypass Program command can be used to program one address in memory at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Program operation using the Program command. A protected block cannot be programmed; the operation cannot be aborted and the Status Register is read. Errors must be reset using the Read/Reset command, which leaves the device in Unlock Bypass Mode. See the Program command for details on the behavior. Unlock Bypass Reset Command. The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset command does not exit from Unlock Bypass Mode. Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands. It is not possible to issue any command to abort the operation. Typical chip erase times are given in Table 6. All Bus Read operations during the Chip Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous data is lost. Block Erase Command. The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50µs after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50µs of the last block. The 50µs timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register for details on how to identify if the Program/Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend command. Typical block erase times are given in Table 6. All Bus Read operations during the Block Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. 13/42 M29W800DT, M29W800DB Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6. for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start immediately when the Erase Resume Command is issued. It is not possible to select any further blocks to erase after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the Program command is ignored and the data remains unchanged. The Status Register is not read and no error condition is given. Reading from blocks that are being erased will output the Status Register. It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will be accepted. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller from Erase Suspend. An erase can be suspended and resumed more than once. Read CFI Query Command. The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Auto Select mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. The Read/Reset command must be issued to return the device to the previous mode (the Read Array mode or Auto Select mode). A second Read/ Reset command would be needed if the device is to be put in the Read Array mode from Auto Select mode. See APPENDIX B., Tables 23, 24, 25, 26, 27 and 28 for details on the information contained in the Common Flash Interface (CFI) memory area. Block Protect and Chip Unprotect Commands. Each block can be separately protected against accidental Program or Erase. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in APPENDIX C. 14/42 M29W800DT, M29W800DB Table 4. Commands, 16-bit mode, BYTE = VIH Length Bus Write Operations 1st Addr X 555 555 555 555 X X 555 555 X X 55 Data F0 AA AA AA AA A0 90 AA AA B0 30 98 2AA 2AA 2AA 2AA PA X 2AA 2AA 55 55 55 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 BA 10 30 X 555 555 555 F0 90 A0 20 PA PD 2nd Addr Data 3rd Addr Data 4th Addr Data 5th Addr Data 6th Addr Data Command 1 Read/Reset 3 Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase Suspend Erase Resume Read CFI Query 3 4 3 2 2 6 6+ 1 1 1 Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH. 15/42 M29W800DT, M29W800DB Table 5. Commands, 8-bit mode, BYTE = VIL Length Bus Write Operations 1st Addr X AAA AAA AAA AAA X X AAA AAA X X AA Data F0 AA AA AA AA A0 90 AA AA B0 30 98 555 555 555 555 PA X 555 555 55 55 55 55 PD 00 55 55 AAA AAA 80 80 AAA AAA AA AA 555 555 55 55 AAA BA 10 30 X AAA AAA AAA F0 90 A0 20 PA PD 2nd Addr Data 3rd Addr Data 4th Addr Data 5th Addr Data 6th Addr Data Command 1 Read/Reset 3 Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase Suspend Erase Resume Read CFI Query 3 4 3 2 2 6 6+ 1 1 1 Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH. Table 6. Program, Erase Times and Program, Erase Endurance Cycles Parameter Chip Erase Block Erase (64 Kbytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data Retention Note: 1. 2. 3. 4. Min Typ (1, 2) 12 0.8 15 10 12 6 Max(2) 60(3) 6(4) 25(3) 200(3) 60(3) 30(4) Unit s s µs µs s s cycles years 100,000 20 Typical values measured at room temperature and nominal voltages. Sampled, but not 100% tested. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. Maximum value measured at worst case conditions for both temperature and VCC. 16/42 M29W800DT, M29W800DB STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. The bits in the Status Register are summarized in Table 7., Status Register Bits. Data Polling Bit (DQ7). The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the Program/Erase Controller has suspended the Erase operation. Figure 8., Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an address within the block being erased. Toggle Bit (DQ6). The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. If any attempt is made to erase a protected block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 1µs. Figure 9., Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit. Error Bit (DQ5). The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’ Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit is set to ’0’ and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. Alternative Toggle Bit (DQ2). The Alternative Toggle Bit can be used to monitor the Program/ Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly. 17/42 M29W800DT, M29W800DB Table 7. Status Register Bits Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Non-Erasing Block Erasing Block Erase Suspend Non-Erasing Block Good Block Address Erase Error Faulty Block Address Note: Unspecified data bits should be ignored. Address Any Address Any Address Any Address Any Address Erasing Block Non-Erasing Block Erasing Block DQ7 DQ7 DQ7 DQ7 0 0 0 0 0 1 DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle No Toggle DQ5 0 0 1 0 0 0 0 0 0 DQ3 – – – 1 0 0 1 1 – DQ2 – – – Toggle Toggle No Toggle Toggle No Toggle Toggle RB 0 0 0 0 0 0 0 0 1 1 Data read as normal 0 0 Toggle Toggle 1 1 1 1 No Toggle Toggle 0 0 Figure 8. Data Polling Flowchart Figure 9. Data Toggle Flowchart START START READ DQ6 READ DQ5 & DQ7 at VALID ADDRESS READ DQ5 & DQ6 DQ7 = DATA NO NO YES DQ6 = TOGGLE YES NO DQ5 =1 YES NO DQ5 =1 YES READ DQ6 TWICE READ DQ7 at VALID ADDRESS DQ7 = DATA NO FAIL YES DQ6 = TOGGLE PASS NO YES FAIL PASS AI01370C AI03598 18/42 M29W800DT, M29W800DB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at Table 8. Absolute Maximum Ratings Symbol TBIAS TSTG VIO VCC VID Temperature Under Bias Storage Temperature Input or Output Voltage (1,2) Supply Voltage Identification Voltage Parameter Min –50 –65 –0.6 –0.6 –0.6 Max 125 150 VCC +0.6 4 13.5 Unit °C °C V V V these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Note: 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions. 19/42 M29W800DT, M29W800DB DC AND AC PARAMETERS This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 9., Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 9. Operating and AC Measurement Conditions M29W800D Parameter Min VCC Supply Voltage Ambient Operating Temperature (range 6) Ambient Operating Temperature (range 1) Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 3.0 –40 0 30 10 0 to VCC VCC/2 45 Max 3.6 85 70 Min 2.7 –40 0 30 10 0 to VCC VCC/2 70 Max 3.6 85 70 Min 2.7 –40 0 100 10 0 to VCC VCC/2 90 Max 3.6 85 °C 70 pF ns V V V Unit Figure 10. AC Measurement I/O Waveform Figure 11. AC Measurement Load Circuit VCC VCC VCC/2 0V AI04498 VCC 25kΩ DEVICE UNDER TEST 25kΩ 0.1µF CL CL includes JIG capacitance AI04499 Table 10. Device Capacitance Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF Note: Sampled only, not 100% tested. 20/42 M29W800DT, M29W800DB Table 11. DC Characteristics Symbol ILI ILO ICC1 ICC2 ICC3 (1) VIL VIH VOL VOH VID IID VLKO Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Standby) Supply Current (Program/Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Identification Voltage Identification Current Program/Erase Lockout Supply Voltage A9 = VID 1.8 IOL = 1.8mA IOH = –100µA VCC –0.4 11.5 12.5 100 2.3 Test Condition 0V ≤ VIN ≤ VCC 0V ≤ VOUT ≤ VCC E = VIL, G = VIH, f = 6MHz E = VCC ±0.2V, RP = VCC ±0.2V Program/Erase Controller active –0.5 0.7VCC Min Max ±1 ±1 10 100 20 0.8 VCC +0.3 0.45 Unit µA µA mA µA mA V V V V V µA V Note: 1. Sampled only, not 100% tested. Figure 12. Read Mode AC Waveforms tAVAV A0-A18/ A–1 tAVQV E tELQV tELQX G tGLQX tGLQV DQ0-DQ7/ DQ8-DQ15 tBHQV BYTE tELBL/tELBH tBLQZ AI05448 VALID tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID 21/42 M29W800DT, M29W800DB Table 12. Read AC Characteristics M29W800D Symbol Alt Parameter Test Condition 45 tAVAV tAVQV tELQX (1) tELQV tGLQX (1) tGLQV tEHQZ (1) tGHQZ (1) tEHQX tGHQX tAXQX tELBL tELBH tBLQZ tBHQV tRC tACC tLZ tCE tOLZ tOE tHZ tDF tOH tELFL tELFH tFLQZ tFHQV Address Valid to Next Address Valid Address Valid to Output Valid Chip Enable Low to Output Transition Chip Enable Low to Output Valid Output Enable Low to Output Transition Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Chip Enable, Output Enable or Address Transition to Output Transition Chip Enable to BYTE Low or High BYTE Low to Output Hi-Z BYTE High to Output Valid E = VIL, G = VIL E = VIL, G = VIL G = VIL G = VIL E = VIL E = VIL G = VIL E = VIL Min Max Min Max Min Max Max Max Min 45 45 0 45 0 25 20 20 0 70 70 70 0 70 0 30 25 25 0 90 90 90 0 90 0 35 30 30 0 ns ns ns ns ns ns ns ns ns Unit Max Max Max 5 25 30 5 25 30 5 30 40 ns ns ns Note: 1. Sampled only, not 100% tested. 22/42 M29W800DT, M29W800DB Figure 13. Write AC Waveforms, Write Enable Controlled tAVAV A0-A18/ A–1 VALID tWLAX tAVWL E tELWL G tGHWL W tWHWL tDVWH DQ0-DQ7/ DQ8-DQ15 VALID tWHDX tWLWH tWHGL tWHEH VCC tVCHEL RB tWHRL AI05449 Table 13. Write AC Characteristics, Write Enable Controlled M29W800D Symbol tAVAV tELWL tWLWH tDVWH tWHDX tWHEH tWHWL tAVWL tWLAX tGHWL tWHGL tWHRL (1) tVCHEL tOEH tBUSY tVCS Alt tWC tCS tWP tDS tDH tCH tWPH tAS tAH Parameter 45 Address Valid to Next Address Valid Chip Enable Low to Write Enable Low Write Enable Low to Write Enable High Input Valid to Write Enable High Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Address Valid to Write Enable Low Write Enable Low to Address Transition Output Enable High to Write Enable Low Write Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Chip Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 45 0 30 25 0 0 30 0 40 0 0 30 50 70 70 0 45 45 0 0 30 0 45 0 0 30 50 90 90 0 50 50 0 0 30 0 50 0 0 35 50 ns ns ns ns ns ns ns ns ns ns ns ns µs Unit Note: 1. Sampled only, not 100% tested. 23/42 M29W800DT, M29W800DB Figure 14. Write AC Waveforms, Chip Enable Controlled tAVAV A0-A18/ A–1 VALID tELAX tAVEL W tWLEL G tGHEL E tEHEL tDVEH DQ0-DQ7/ DQ8-DQ15 VALID tEHDX tELEH tEHGL tEHWH VCC tVCHWL RB tEHRL AI05450 Table 14. Write AC Characteristics, Chip Enable Controlled M29W800D Symbol tAVAV tWLEL tELEH tDVEH tEHDX tEHWH tEHEL tAVEL tELAX tGHEL tEHGL tEHRL (1) tVCHWL tOEH tBUSY tVCS Alt tWC tWS tCP tDS tDH tWH tCPH tAS tAH Parameter 45 Address Valid to Next Address Valid Write Enable Low to Chip Enable Low Chip Enable Low to Chip Enable High Input Valid to Chip Enable High Chip Enable High to Input Transition Chip Enable High to Write Enable High Chip Enable High to Chip Enable Low Address Valid to Chip Enable Low Chip Enable Low to Address Transition Output Enable High Chip Enable Low Chip Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Write Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 45 0 30 25 0 0 30 0 40 0 0 30 50 70 70 0 45 45 0 0 30 0 45 0 0 30 50 90 90 0 50 50 0 0 30 0 50 0 0 35 50 ns ns ns ns ns ns ns ns ns ns ns ns µs Unit Note: 1. Sampled only, not 100% tested. 24/42 M29W800DT, M29W800DB Figure 15. Reset/Block Temporary Unprotect AC Waveforms W, E, G tPHWL, tPHEL, tPHGL RB tRHWL, tRHEL, tRHGL RP tPLPX tPHPHH tPLYH AI06870 Table 15. Reset/Block Temporary Unprotect AC Characteristics M29W800D Symbol tPHWL (1) tPHEL tPHGL (1) tRHWL (1) tRHEL (1) tRHGL (1) Alt Parameter 45 RP High to Write Enable Low, Chip Enable Low, Output Enable Low 70 90 Unit tRH Min 50 50 50 ns tRB RB High to Write Enable Low, Chip Enable Low, Output Enable Low RP Pulse Width RP Low to Read Mode RP Rise Time to VID Min 0 0 0 ns tPLPX tPLYH (1) tPHPHH (1) tRP tREADY tVIDR Min Max Min 500 10 500 500 10 500 500 10 500 ns µs ns Note: 1. Sampled only, not 100% tested. 25/42 M29W800DT, M29W800DB PACKAGE MECHANICAL Figure 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline A2 b e D A C CP N E EH α 1 A1 L SO-d Note: Drawing is not to scale. Table 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data millimeters Symbol Typ A A1 A2 b C CP D E EH e L α N 44 28.20 13.30 16.00 1.27 0.80 8° 44 28.00 13.20 15.75 – 2.30 0.40 0.15 0.10 2.20 0.35 0.10 2.40 0.50 0.20 0.08 28.40 13.50 16.25 – 1.1102 0.5236 0.6299 0.0500 0.0315 8° 1.1024 0.5197 0.6201 – 0.0906 0.0157 0.0059 Min Max 2.80 0.0039 0.0866 0.0138 0.0039 0.0945 0.0197 0.0079 0.0030 1.1181 0.5315 0.6398 – Typ Min Max 0.1102 inches 26/42 M29W800DT, M29W800DB Figure 17. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline 1 48 e D1 B 24 25 L1 A2 A E1 E DIE A1 C CP α L TSOP-G Note: Drawing is not to scale. Table 17. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data millimeters Symbol Typ A A1 A2 B C CP D1 E E1 e L L1 α 12.000 20.000 18.400 0.500 0.600 0.800 3° 0° 5° 11.900 19.800 18.300 – 0.500 0.100 1.000 0.220 0.050 0.950 0.170 0.100 Min Max 1.200 0.150 1.050 0.270 0.210 0.080 12.100 20.200 18.500 – 0.700 0.4724 0.7874 0.7244 0.0197 0.0236 0.0315 3° 0° 5° 0.4685 0.7795 0.7205 – 0.0197 0.0039 0.0394 0.0087 0.0020 0.0374 0.0067 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.0031 0.4764 0.7953 0.7283 – 0.0276 inches 27/42 M29W800DT, M29W800DB Figure 18. TFBGA48 6x9mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline D FD FE SD D1 SE BALL "A1" E E1 ddd e e A A1 b A2 BGA-Z00 Note: Drawing is not to scale. Table 18. TFBGA48 6x9mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data millimeters Symbol Typ A A1 A2 b D D1 ddd E e E1 FD FE SD SE 9.000 0.800 5.600 1.000 1.700 0.400 0.400 8.900 – – – – – – 0.400 6.000 4.000 0.350 5.900 – 0.200 1.000 0.450 6.100 – 0.100 9.100 – – – – – – 0.3543 0.0315 0.2205 0.0394 0.0669 0.0157 0.0157 0.3504 – – – – – – 0.0157 0.2362 0.1575 0.0138 0.2323 – Min Max 1.200 0.0079 0.0394 0.0177 0.2402 – 0.0039 0.3583 – – – – – – Typ Min Max 0.0472 inches 28/42 M29W800DT, M29W800DB Figure 19. TFBGA48 6x8mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline D FD FE SD D1 SE E E1 BALL "A1" ddd e e A A1 b A2 BGA-Z32 Note: Drawing is not to scale. Table 19. TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data millimeters Symbol Typ A A1 A2 b D D1 ddd E E1 e FD FE SD SE 8.000 5.600 0.800 1.000 1.200 0.400 0.400 7.900 – – – – – – 6.000 4.000 0.350 5.900 – 0.260 0.900 0.450 6.100 – 0.100 8.100 – – – – – – 0.3150 0.2205 0.0315 0.0394 0.0472 0.0157 0.0157 0.3110 – – – – – – 0.2362 0.1575 0.0138 0.2323 – Min Max 1.200 0.0102 0.0354 0.0177 0.2402 – 0.0039 0.3189 – – – – – – Typ Min Max 0.0472 inches 29/42 M29W800DT, M29W800DB PART NUMBERING Table 20. Ordering Information Scheme Example: Device Type M29 Operating Voltage W = VCC = 2.7 to 3.6V Device Function 800D = 8 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 45 = 45ns 70 = 70 ns 90 = 90 ns Package M = SO44 N = TSOP48: 12 x 20 mm ZA = TFBGA48: 6x9mm, 0.80mm pitch ZE = TFBGA48: 6x8mm, 0.80mm pitch Temperature Range 6 = –40 to 85 °C 1 = 0 to 70 °C Option T = Tape & Reel Packing E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing M29W800DB 90 N 6 T Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. 30/42 M29W800DT, M29W800DB APPENDIX A. BLOCK ADDRESS TABLE Table 21. Top Boot Block Addresses, M29W800DT # 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Size (Kbytes) 16 8 8 32 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 Address Range (x8) FC000h-FFFFFh FA000h-FBFFFh F8000h-F9FFFh F0000h-F7FFFh E0000h-EFFFFh D0000h-DFFFFh C0000h-CFFFFh B0000h-BFFFFh A0000h-AFFFFh 90000h-9FFFFh 80000h-8FFFFh 70000h-7FFFFh 60000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh 30000h-3FFFFh 20000h-2FFFFh 10000h-1FFFFh 00000h-0FFFFh Address Range (x16) 7E000h-7FFFFh 7D000h-7DFFFh 7C000h-7CFFFh 78000h-7BFFFh 70000h-77FFFh 68000h-6FFFFh 60000h-67FFFh 58000h-5FFFFh 50000h-57FFFh 48000h-4FFFFh 40000h-47FFFh 38000h-3FFFFh 30000h-37FFFh 28000h-2FFFFh 20000h-27FFFh 18000h-1FFFFh 10000h-17FFFh 08000h-0FFFFh 00000h-07FFFh Table 22. Bottom Boot Block Addresses, M29W800DB # 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Size (Kbytes) 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 32 8 8 16 Address Range (x8) F0000h-FFFFFh E0000h-EFFFFh D0000h-DFFFFh C0000h-CFFFFh B0000h-BFFFFh A0000h-AFFFFh 90000h-9FFFFh 80000h-8FFFFh 70000h-7FFFFh 60000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh 30000h-3FFFFh 20000h-2FFFFh 10000h-1FFFFh 08000h-0FFFFh 06000h-07FFFh 04000h-05FFFh 00000h-03FFFh Address Range (x16) 78000h-7FFFFh 70000h-77FFFh 68000h-6FFFFh 60000h-67FFFh 58000h-5FFFFh 50000h-57FFFh 48000h-4FFFFh 40000h-47FFFh 38000h-3FFFFh 30000h-37FFFh 28000h-2FFFFh 20000h-27FFFh 18000h-1FFFFh 10000h-17FFFh 08000h-0FFFFh 04000h-07FFFh 03000h-03FFFh 02000h-02FFFh 00000h-01FFFh 31/42 M29W800DT, M29W800DB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure Table 23. Query Structure Overview Address Sub-section Name x16 10h 1Bh 27h 40h 61h x8 20h 36h 4Eh 80h C2h CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query table Security Code Area Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) 64 bit unique device number Description is read from the memory. Tables 23, 24, 25, 26, 27 and 28 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 28., Security Code Area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by ST. Issue a Read command to return to Read mode. Note: Query data are always presented on the lowest order data outputs. Table 24. CFI Query Identification String Address Data x16 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah x8 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h 0051h 0052h 0059h 0002h 0000h 0040h Address for Primary Algorithm extended Query table (see Table 27.) 0000h 0000h 0000h 0000h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported Address for Alternate Algorithm extended Query table NA P = 40h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Query Unique ASCII String "QRY" "Q" "R" "Y" AMD Compatible Description Value NA Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. 32/42 M29W800DT, M29W800DB Table 25. CFI Query System Interface Information Address Data x16 1Bh x8 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Minimum Program/Erase voltage VPP [Programming] Supply Maximum Program/Erase voltage Typical timeout per single byte/word program = 2n µs Typical timeout for minimum size write buffer program = 2n µs Typical timeout per individual block erase = 2n ms Typical timeout for full chip erase = 2n ms Maximum timeout for byte/word program = 2n times typical Maximum timeout for write buffer program = 2n times typical Maximum timeout per individual block erase = 2n times typical Maximum timeout for chip erase = 2n times typical 2.7V Description Value 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch 0036h 0000h 0000h 0004h 0000h 000Ah 0000h 0004h 0000h 0003h 0000h 3.6V NA NA 16µs NA 1s see note (1) 256µs NA 8s see note (1) Note: 1. Not supported in the CFI 33/42 M29W800DT, M29W800DB Table 26. Device Geometry Definition Address Data x16 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch x8 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h 0014h 0002h 0000h 0000h 0000h 0004h 0000h 0000h 0040h 0000h 0001h 0000h 0020h 0000h 0000h 0000h 0080h 0000h 000Eh 0000h 0000h 0001h Device Size = 2n in number of bytes Flash Device Interface Code description Maximum number of bytes in multi-byte program or page = 2n Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. Region 1 Information Number of identical size erase block = 0000h+1 Region 1 Information Block size in Region 1 = 0040h * 256 byte Region 2 Information Number of identical size erase block = 0001h+1 Region 2 Information Block size in Region 2 = 0020h * 256 byte Region 3 Information Number of identical size erase block = 0000h+1 Region 3 Information Block size in Region 3 = 0080h * 256 byte Region 4 Information Number of identical-size erase block = 000Eh+1 Region 4 Information Block size in Region 4 = 0100h * 256 byte 1 MByte x8, x16 Async. NA Description Value 4 1 16 Kbyte 2 8 Kbyte 1 32 Kbyte 15 64 Kbyte 34/42 M29W800DT, M29W800DB Table 27. Primary Algorithm-Specific Extended Query Table Address Data x16 40h 41h 42h 43h 44h 45h x8 80h 82h 84h 86h 88h 8Ah 0050h 0052h 0049h 0031h 0030h 0000h Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write Block Protection 00 = not supported, x = number of sectors in per group Temporary Block Unprotect 00 = not supported, 01 = supported Block Protect /Unprotect 04 = M29W400B Simultaneous Operations, 00 = not supported Burst Mode, 00 = not supported, 01 = supported Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page word Primary Algorithm extended Query table unique ASCII string “PRI” "P" "R" "I" "1" "0" Yes Description Value 46h 47h 48h 49h 4Ah 4Bh 4Ch 8Ch 8Eh 90h 92h 94h 96h 98h 0002h 0001h 0001h 0004h 0000h 0000h 0000h 2 1 Yes 4 No No No Table 28. Security Code Area Address x16 61h 62h 63h 64h x8 C3h, C2h C5h, C4h C7h, C6h C9h, C8h Data XXXX XXXX XXXX XXXX 64 bit: unique device number Description 35/42 M29W800DT, M29W800DB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any operation from modifying the data stored in the Flash. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described in the Signal Descriptions section. Unlike the Command Interface of the Program/ Erase Controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers. For example, the techniques for AMD parts will not work on STMicroelectronics parts. Care should be taken when changing drivers for one part to work on another. Programmer Technique The Programmer technique uses high (VID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a block follow the flowchart in Figure 20., Programmer Equipment Block Protect Flowchart, To unprotect the whole chip it is necessary to protect all of the blocks first, then all blocks can be unprotected at the same time. To unprotect the chip follow Figure 21., Programmer Equipment Chip Unprotect Flowchart. Table 29., Programmer Technique Bus Operations, BYTE = VIH or VIL, gives a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. In-System Technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the Flash has been fitted to the system. To protect a block follow the flowchart in Figure 22., In-System Equipment Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all the blocks can be unprotected at the same time. To unprotect the chip follow Figure 23., In-System Equipment Chip Unprotect Flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. Table 29. Programmer Technique Bus Operations, BYTE = VIH or VIL Operation Block Protect Chip Unprotect Block Protection Verify Block Unprotection Verify E VIL VID G VID VID W VIL Pulse VIL Pulse Address Inputs A0-A18 A9 = VID, A12-A18 Block Address Others = X A9 = VID, A12 = VIH, A15 = VIH Others = X A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID, A12-A18 Block Address Others = X A0 = VIL, A1 = VIH, A6 = VIH, A9 = VID, A12-A18 Block Address Others = X Data Inputs/Outputs DQ15A–1, DQ14-DQ0 X X Pass = XX01h Retry = XX00h Retry = XX01h Pass = XX00h VIL VIL VIH VIL VIL VIH 36/42 M29W800DT, M29W800DB Figure 20. Programmer Equipment Block Protect Flowchart START ADDRESS = BLOCK ADDRESS Set-up W = VIH n=0 G, A9 = VID, E = VIL Wait 4µs Protect W = VIL Wait 100µs W = VIH E, G = VIH, A0, A6 = VIL, A1 = VIH E = VIL Wait 4µs G = VIL Wait 60ns Read DATA Verify DATA NO = 01h YES A9 = VIH E, G = VIH End PASS ++n = 25 YES A9 = VIH E, G = VIH FAIL AI03469 NO 37/42 M29W800DT, M29W800DB Figure 21. Programmer Equipment Chip Unprotect Flowchart START PROTECT ALL BLOCKS Set-up n=0 CURRENT BLOCK = 0 A6, A12, A15 = VIH(1) E, G, A9 = VID Wait 4µs Unprotect W = VIL Wait 10ms W = VIH E, G = VIH ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1, A6 = VIH E = VIL Wait 4µs G = VIL Verify Wait 60ns Read DATA INCREMENT CURRENT BLOCK NO DATA = 00h YES NO ++n = 1000 YES LAST BLOCK YES A9 = VIH E, G = VIH PASS NO End A9 = VIH E, G = VIH FAIL AI03470 38/42 M29W800DT, M29W800DB Figure 22. In-System Equipment Block Protect Flowchart START Set-up n=0 RP = VID WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Protect WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Wait 100µs WRITE 40h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Verify Wait 4µs READ DATA ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL DATA NO = 01h YES RP = VIH End ISSUE READ/RESET COMMAND ++n = 25 YES RP = VIH ISSUE READ/RESET COMMAND NO PASS FAIL AI03471 39/42 M29W800DT, M29W800DB Figure 23. In-System Equipment Chip Unprotect Flowchart START PROTECT ALL BLOCKS Set-up n=0 CURRENT BLOCK = 0 RP = VID WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH Unprotect WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH Wait 10ms WRITE 40h ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH Verify Wait 4µs READ DATA ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH INCREMENT CURRENT BLOCK NO DATA = 00h YES NO ++n = 1000 YES RP = VIH LAST BLOCK YES RP = VIH NO End ISSUE READ/RESET COMMAND ISSUE READ/RESET COMMAND FAIL PASS AI03472 40/42 M29W800DT, M29W800DB REVISION HISTORY Table 30. Document Revision History Date August 2001 03-Dec-2001 Version 1.0 2.0 First Issue Block Protection Appendix added, SO44 drawing and package mechanical data updated, CFI Table 26, address 39h/72h data clarified, Read/Reset operation during Erase Suspend clarified Description of Ready/Busy signal clarified (and Figure 15. modified) Clarified allowable commands during block erase Clarified the mode the device returns to in the CFI Read Query command section Temperature range 1 added Document promoted from Preliminary Data to full Data Sheet Erase Suspend Latency Time (typical and maximum) and Data Retention parameters added to Table Table 6., Program, Erase Times and Program, Erase Endurance Cycles, and Typical after 100k W/E Cycles column removed. Minimum voltage corrected for 70ns Speed Class in Table 9., Operating and AC Measurement Conditions. Logic Diagram and Data Toggle Flowchart corrected. Lead-free package options E and F added to Table 20., Ordering Information Scheme. TSOP48 package Outline and Mechanical Data updated. TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch added. Table 9.Operating and AC Measurement Conditions updated for 70ns speed option. Figure 3., SO Connections updated. 45ns speed class added. Revision Details 01-Mar-2002 3.0 11-Apr-2002 4.0 31-Mar-2003 4.1 13-Feb-2004 23-Apr-2004 16-Sep-2004 5.0 6.0 7.0 41/42 M29W800DT, M29W800DB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 42/42