M74HC03C1R

M74HC03C1R

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HC03C1R - QUAD 2-INPUT OPEN DRAIN NAND GATE - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC03C1R 数据手册
M 54HC03 M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE . . . . . . . HIGH SPEED tPZ = 5 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS03 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC03F1R M74HC03M1R M74HC03B1R M74HC03C1R DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2INPUT OPEN DRAIN NAND GATE fabricated in sili2 con gate C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which gives high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a led driver and in any other application requiring a current sink. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN CONNECTIONS (top view) NC = No Internal Connection January 1993 1/9 M54/M74HC03 T RUTH TABLE A L L H H Z = HIGH IMPEDANCE IEC LOGIC SYMBOL B L H L H Y Z Z Z L PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage CIRCUIT DIAGRAM VCC = Pin 14 GND = Pin 7 open–d rain outputs ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 + 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 2/9 M54/M74HC03 R ECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o VCC = 2 V VCC = 4.5 V VCC = 6 V DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 0.0 0.0 0.0 0.17 0.18 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 1 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.1 0.1 0.1 0.33 0.33 ±1 ±5 10 Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.1 0.1 0.1 0.40 0.40 ±1 ±10 20 µA µA µA V V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage Low Level Output Voltage V IL VOL VI = IO= 20 µA VIH or V IL IO= 4.0 mA IO= 5.2 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND 3/9 M54/M74HC03 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 RL = 1 KΩ 6.0 tPZL Propagation Delay Time Input Capacitance Power Dissipation Capacitance 2.0 4.5 RL = 1 KΩ 6.0 TA = 25 C 54HC and 74HC Min. Typ. Max. 30 8 7 16 9 8 23 7 6 5 7 75 15 13 60 12 10 60 12 10 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 95 19 16 75 15 13 75 15 13 10 110 22 19 90 18 15 90 18 15 10 ns pF pF ns ns Unit tTLH tTHL tPLZ Output Transition Time Propagation Delay Time CIN CPD (*) (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate) TYPICAL APPLICATIONS Wired AND LED Driver with Blanking Typical values VCC = 5V VD = 2V VDS = 0.4V RD = 120 ÷ 270Ω W = Y1 Y2 ... Yn = A1B1 A2B2 ... AnBn = A1B1 + A2B2 +... + AnBn ID = 10 : 20 mA V CC − VD − VDS 5 − 2 − 0.4 RD = = = 130 Ω (*) ID 20 × 10−3 (*)260 Ω with ID = 10 mA 4/9 M54/M74HC03 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 5/9 M54/M74HC03 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 6/9 M54/M74HC03 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 7/9 M54/M74HC03 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 8/9 M54/M74HC03 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9
M74HC03C1R
物料型号: - M54HC03F1R - M74HC03M1R - M74HC03B1R - M74HC03C1R

器件简介: M54/74HC03是一种高速CMOS四2输入开漏NAND门,采用硅门CMOS技术制造。它结合了LSTTL的高速性能和真正的CMOS低功耗特性。内部电路由3级组成,包括缓冲输出级,提供高噪声免疫力和稳定的输出。该器件可以配合外部上拉电阻,在有线AND配置中使用。也可以作为LED驱动器使用,在任何需要电流吸收的应用中发挥作用。所有输入都配备了防静电和瞬态过电压的保护电路。

引脚分配: - 1, 4, 9, 12:1A至4A数据输入 - 2, 5, 10, 13:1B至4B数据输入 - 3, 6, 8, 11:1Y至4Y数据输出 - 7:GND(0V) - 14:VCC(供电电压)

参数特性: - 工作电压范围:VCC (OPR) = 2V至6V - 最大功耗:PD = 500 mW(在65°C时降至300 mW,每升高1°C降10mW) - 存储温度范围:Tstg = -65至+150°C - 引脚温度(10秒):TL = 300°C

功能详解: M54/74HC03具有高噪声免疫力和稳定的输出,适用于高速数字电路。它可以作为LED驱动器或在需要电流吸收的场合使用。

应用信息: - Wired AND配置 - LED驱动器带消隐功能

封装信息: - Ceramic Package (F1R) - Plastic Package (B1R) - Micro Package (M1R) - Chip Carrier (C1R) - SO14 - PLCC20
M74HC03C1R 价格&库存

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