M74HC10B1

M 54HC10 M74HC10 TRIPLE 3-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS10 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC10F1R M74HC10M1R M74HC10B1R M74HC10C1R DESCRIPTION The M54/74HC10 is a high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate 2 C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN CONNECTIONS (top view) NC = No Internal Connection December 1992 1/9 M54/M74HC10 T RUTH TABLE A L X X H B X L X H C X X L H Y H H H L IEC LOGIC SYMBOL PIN DESCRIPTION PIN No 1, 3, 9 2, 4, 10 13, 5, 11 12, 6, 8 7 14 SYMBOL 1A to 3A 1B to 3B 1C to 3C 1Y to 3Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage SCHEMATIC CIRCUIT (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 2/9 M54/M74HC10 R ECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o VCC = 2 V VCC = 4.5 V VCC = 6 V DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 1 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-4.0 mA IO=-5.2 mA VI = IO= 20 µA VIH or V IL IO= 4.0 mA IO= 5.2 mA VI = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 10 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 20 µA µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL V OH 3/9 M54/M74HC10 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 CIN CPD (*) Input Capacitance Power Dissipation Capacitance TA = 25 C 54HC and 74HC Min. Typ. Max. 30 8 7 27 9 8 5 23 75 15 13 75 15 13 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 95 19 16 95 19 16 10 110 22 19 110 22 19 10 pF pF ns ns Unit tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/3 (per Gate) SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 4/9 M54/M74HC10 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 5/9 M54/M74HC10 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 6/9 M54/M74HC10 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 7/9 M54/M74HC10 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 8/9 M54/M74HC10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9