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M74HC20

M74HC20

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HC20 - DUAL 4-INPUT NAND GATE - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC20 数据手册
M 54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS20 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC20F1R M74HC20M1R M74HC20B1R M74HC20C1R PIN CONNECTIONS (top view) DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4INPUT NAND GATE fabricated in silicon gate 2 C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffered output, which gives high noise immunity and a stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection December 1992 1/9 M54/M74HC20 T RUTH TABLE A L X X X H B X L X X H C X X L X H D X X X L H Y H H H H L IEC LOGIC SYMBOL PIN DESCRIPTION PIN No 1, 9 2, 10 3, 11 4, 12 5, 13 6, 8 7 14 SYMBOL 1A to 2A 1B to 2B N. C. 1C, 2C 1D, 2D 1Y to 2Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Not Connected Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage SCHEMATIC CIRCUIT (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 2/9 M54/M74HC20 R ECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o VCC = 2 V VCC = 4.5 V VCC = 6 V DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 1 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-4.0 mA IO=-5.2 mA VI = IO= 20 µA VIH or V IL IO= 4.0 mA IO= 5.2 mA VI = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 10 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 20 µA µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL V OH 3/9 M54/M74HC20 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 CIN CPD (*) Input Capacitance Power Dissipation Capacitance TA = 25 C 54HC and 74HC Min. Typ. Max. 30 8 7 30 10 9 5 27 75 15 13 80 16 14 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 95 19 16 100 20 17 10 110 22 19 120 24 20 10 pF pF ns ns Unit tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/2 (per Gate) SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 4/9 M54/M74HC20 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 5/9 M54/M74HC20 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 6/9 M54/M74HC20 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 7/9 M54/M74HC20 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 8/9 M54/M74HC20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9
M74HC20
### 物料型号 - M54HC20F1R - M74HC20M1R - M74HC20B1R - M74HC20C1R

### 器件简介 M54/74HC20是一款高速CMOS双4输入NAND门,采用硅门C2MOS技术制造。它结合了LSTTL的高速性能和真正的CMOS低功耗特性。内部电路由3个阶段组成,包括缓冲输出,提供高噪声免疫力和稳定的输出。所有输入都配备了防静电放电和瞬态过电压的保护电路。

### 引脚分配 - 1, 9: 1A到2A数据输入 - 2, 10: 1B到2B数据输入 - 3, 11: NC(无内部连接) - 4, 12, 5, 13: 1C, 2C, 1D, 2D数据输入 - 6, 8: 1Y到2Y数据输出 - 7: GND(地) - 14: VCC(正电源电压)

### 参数特性 - 工作电压范围:VCC(OPR) = 2V至6V - 典型传播延迟:tPD = 8ns(在VCC = 5V时) - 最大功耗:ICC = 1μA(在Ta=25°C时) - 输出驱动能力:可驱动10个LSTTL负载 - 对称输出阻抗:|IOH|=IOL=4mA(最小值) - 噪声免疫力:VNIH=VNIL=28%VCC(最小值)

### 功能详解 M54/74HC20包含两个独立的4输入NAND门,每个门的输出均为低电平有效。当所有输入均为高电平时,输出为低电平;否则输出为高电平。

### 应用信息 该器件适用于需要高速和低功耗的数字电路,如计算机、通信设备和工业控制系统。

### 封装信息 - Plastic Package: B1R - Ceramic Package: F1R - Micro Package: M1R - Chip Carrier: C1R
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