M74HC241B1R

M74HC241B1R

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DIP20_300MIL

  • 描述:

    IC BUFFER NON-INVERT 6V 20DIP

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC241B1R 数据手册
M74HC241 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED) s s s s s s s HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 241 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HC241B1R M74HC241M1R T&R M74HC241RM13TR M74HC241TTR DESCRIPTION The 74HC241 is an advanced high-speed CMOS OCTAL BUS BUFFER (3-STATE) fabricated with silicon gate C2MOS technology. Each G and G control inputs governs four BUS BUFFERs. This device is designed to be used with 3 state memory address drivers, etc. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10 M74HC241 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2, 4, 6, 8 9, 7, 5, 3 11, 13, 15, 17 18, 16, 14, 12 19 10 20 SYMBOL 1G 1A1 to 1A4 2Y1 to 2Y4 2A1 to 2A4 1Y1 to 1Y4 2G GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Data Inputs Data Outputs Output Enable Input Ground (0V) Positive Supply Voltage TRUTH TABLE INPUTS 1G L L H X : Don’t Care Z : High Impedance OUTPUT 1An L H X 1Yn L H Z 2G H H L INPUTS 2An L H X OUTPUT 2Yn L H Z ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/ °C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V 2/10 Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V °C ns ns ns M74HC241 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 IO=-20 µA IO=-20 µA IO=-20 µA IO=-6.0 mA IO=-7.8 mA IO=20 µA IO=20 µA IO=20 µA IO=6.0 mA IO=7.8 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND TA = 25°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ± 0.1 ± 0.5 4 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5 40 Typ. Max. Value -40 to 85°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 ± 10 80 µA µA µA V V Max. -55 to 125°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL V VOH ICC 3/10 M74HC241 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 CL (pF) TA = 25°C Min. Typ. 25 7 6 36 12 10 51 17 14 48 16 14 63 21 18 32 15 14 Max. 60 12 10 90 18 15 130 26 22 125 25 21 165 33 28 125 25 21 Value -40 to 85°C Min. Max. 75 19 13 115 23 20 165 33 28 155 31 25 205 41 35 155 31 26 -55 to 125°C Min. Max. 90 18 15 135 27 23 195 39 33 190 38 32 250 50 43 190 38 32 ns Unit tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time 50 50 ns 150 ns tPZL tPZH High Impedance Output Enable Time 50 RL = 1 KΩ ns 150 RL = 1 KΩ ns tPLZ tPHZ High Impedance Output Disable Time 50 RL = 1 KΩ ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 5.0 5.0 5.0 TA = 25°C Min. Typ. 5 10 33 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF pF Unit CIN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = C PD x VCC x fIN + ICC/8 (per circuit) 4/10 M74HC241 TEST CIRCUIT TEST tPLH, tPHL tPZL, tPLZ tPZH, tPHZ CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) SWITCH Open VCC GND WAVEFORM 1 :PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 5/10 M74HC241 WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle) 6/10 M74HC241 Plastic DIP-20 (0.25) MECHANICAL DATA mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.34 8.5 2.54 22.86 7.1 3.93 0.130 0.053 0.254 1.39 0.45 0.25 25.4 0.335 0.100 0.900 0.280 0.155 1.65 TYP MAX. MIN. 0.010 0.055 0.018 0.010 1.000 0.065 TYP. MAX. inch P001J 7/10 M74HC241 SO-20 MECHANICAL DATA mm. DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8° (max.) 0.291 0.020 13.00 10.65 0.35 0.23 0.5 45° (typ.) 0.496 0.393 0.050 0.450 0.300 0.050 0.029 0.512 0.419 0.1 TYP MAX. 2.65 0.2 2.45 0.49 0.32 0.014 0.009 0.020 0.004 MIN. TYP. MAX. 0.104 0.008 0.096 0.019 0.012 inch PO13L 8/10 M74HC241 TSSOP20 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0° 0.45 0.60 0.05 0.8 0.19 0.09 6.4 6.2 4.3 6.5 6.4 4.4 0.65 BSC 8° 0.75 0° 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 6.6 6.6 4.48 0.002 0.031 0.007 0.004 0.252 0.244 0.169 0.256 0.252 0.173 0.0256 BSC 8° 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.260 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0087225C 9/10 M74HC241 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10
M74HC241B1R
物料型号: - DIP封装:M74HC241B1R - SOP封装:M74HC241M1R - SOP封装,卷带与轴向切割:M74HC241RM13TR - TSSOP封装:无特定型号,但有M74HC241TTR

器件简介: 74HC241是一款采用硅门C2MOS技术制造的高速CMOS八路总线缓冲器(三态),每个G和G控制输入控制四个总线缓冲器。该器件设计用于与三态存储器地址驱动器等配合使用,所有输入都配备了防静电放电和瞬态过电压的保护电路。

引脚分配: - 1: 1G(输出使能输入) - 2, 4, 6, 8: 1A1至1A4(数据输入) - 9, 7, 5, 3: 2Y1至2Y4(数据输出) - 11, 13, 15, 17: 2A1至2A4(数据输入) - 18, 16, 14, 12: 1Y1至1Y4(数据输出) - 19: 2G(输出使能输入) - 10: GND(地) - 20: Vcc(正电源电压)

参数特性: - 高速:典型条件下,传播延迟时间为10ns - 低功耗:最大4μA的功耗 - 高噪声容限:最小28%Vcc - 对称输出阻抗:最小6mA - 宽工作电压范围:2V至6V - 与74系列241引脚和功能兼容

功能详解: 74HC241具有两个输出使能输入(1G和2G),控制八路数据的缓冲。当1G或2G为低电平时,相应的数据输入被直接传递到数据输出。当1G或2G为高电平时,相应的数据输出呈现高阻态。

应用信息: 该器件适用于高速数据总线传输、三态存储器地址驱动等应用。

封装信息: - DIP-20 (0.25英寸) - SO-20 - TSSOP-20
M74HC241B1R 价格&库存

很抱歉,暂时无法提供与“M74HC241B1R”相匹配的价格&库存,您可以联系我们找货

免费人工找货