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M74HC266RM13TR

M74HC266RM13TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SO-14_8.65X3.9MM

  • 描述:

    IC GATE XNOR OD 4CH 2-INP 14SO

  • 数据手册
  • 价格&库存
M74HC266RM13TR 数据手册
M74HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN ■ ■ ■ ■ ■ HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 266 DIP ) (s TUBE t e l o DIP SOP TSSOP s b O TSSOP u d o r P e ORDER CODES PACKAGE DESCRIPTION The M74HC266 is an high speed CMOS QUAD EXCLUSIVE NOR GATE fabricated with silicon gate C2MOS technology. The M74HC266 has a high performance N-channel MOS transistor (OPEN DRAIN output). Input and Output ensure high noise immunity and stable outputs. ) s ( ct SOP M74HC266B1R M74HC266M1R T&R M74HC266RM13TR M74HC266TTR All inputs are equipped with protection circuits against static discharge and transient excess voltage. t c u d o r P e t e l o s b O PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HC266 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 5, 8, 12 2, 6, 9, 13 3, 4, 10, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND VCC 14 NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A B L L H H L H L H Z : High Impedance ABSOLUTE MAXIMUM RATINGS Symbol VCC e t e ol Parameter Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Current o r P Tstg Storage Temperature TL Lead Temperature (10 sec) e t e ol t(s c u d ICC or IGND DC VCC or Ground Current PD Power Dissipation )- s b O Y ) s ( t c u d o r P Z L L Z Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 ± 20 V mA ± 20 mA ± 25 mA ± 50 mA 500(*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C s b O RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Unit 2 to 6 V V VI Input Voltage 0 to VCC VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns Input Rise and Fall Time tr, tf 2/8 Value M74HC266 DC SPECIFICATIONS Test Condition Symbol VIH Parameter High Level Input Voltage Low Level Input Voltage VIL High Level Output Voltage VOH VOL II Low Level Output Voltage IOZ Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current ICC Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 1.5 3.15 4.2 -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 2.0 1.9 1.9 IO=-20 µA 4.4 4.5 4.4 4.4 du IO=-20 µA 5.9 6.0 5.9 4.18 4.31 4.13 5.68 5.9 6.0 IO=-5.2 mA 2.0 IO=20 µA 0.0 0.1 4.5 IO=20 µA 0.0 0.1 o r P 6.0 IO=20 µA 0.0 0.1 4.5 IO=4.0 mA 0.17 6.0 IO=5.2 mA 0.18 6.0 5.8 5.63 V ) s ( ct IO=-20 µA 4.5 IO=-4.0 mA V 0.5 1.35 1.8 2.0 4.5 Max. 1.5 3.15 4.2 0.5 1.35 1.8 6.0 Unit V 4.10 5.60 0.1 0.1 0.1 0.1 0.1 0.1 0.26 0.33 0.40 0.26 0.33 0.40 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VIH or VIL VO = VCC or GND ± 0.5 ±5 ± 10 µA 6.0 VI = VCC or GND 1 10 20 µA ) (s e t e l so b O t c u d o r V AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Symbol let O o s b tTHL P e Parameter Output Transition Time tPLZ tPZL Propagation Delay Time Test Condition TA = 25°C VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 Value Min. RL = 1 KΩ Typ. Max. 30 8 7 48 12 10 75 15 13 90 18 15 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 115 23 20 Unit Max. 110 22 19 135 27 23 ns ns 3/8 M74HC266 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter Value TA = 25°C VCC (V) Min. Typ. Max. 10 CIN Input Capacitance 5.0 5 CPD Power Dissipation Capacitance (note 1) 5.0 20 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate) ) s ( ct TEST CIRCUIT u d o r P e t e l o ) (s s b O t c u d o r CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) P e WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) t e l o s b O 4/8 M74HC266 Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D ) s ( ct 20 E 8.5 e 2.54 e3 15.24 u d o 0.335 7.1 I 5.1 1.27 s ( t c 2.54 e t e ol bs O ) 3.3 Z Pr 0.100 F L 0.787 0.600 0.280 0.201 0.130 0.050 0.100 u d o r P e t e l o s b O P001A 5/8 M74HC266 SO-14 MECHANICAL DATA mm. DIM. MIN. TYP A inch MAX. MIN. TYP. a1 1.75 MAX. 0.1 0.068 0.2 a2 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 b1 0.19 0.25 0.007 C 0.5 0.018 ) s ( ct 0.010 0.019 c1 45° (typ.) D 8.55 8.75 0.336 E 5.8 6.2 0.228 e 1.27 e3 7.62 F 3.8 4.0 4.6 5.3 L 0.5 ) (s e t e l so b O 1.27 S Pr 0.344 0.244 0.050 G M u d o 0.68 0.300 0.149 0.157 0.181 0.208 0.019 0.050 0.026 8° (max.) t c u d o r P e t e l o s b O PO13G 6/8 M74HC266 TSSOP14 MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. MAX. 1.2 A1 0.05 A2 0.8 b 0.047 0.15 0.002 0.004 0.006 1.05 0.031 0.039 0.041 0.19 0.30 0.007 c 0.09 0.20 0.004 D 4.9 5 5.1 0.193 E 6.2 6.4 6.6 0.244 E1 4.3 4.4 4.48 1 e bs 0.65 BSC K 0° L 0.45 let o s b 0.60 s ( t c 0.75 du ro P e 0.0089 0.197 0.201 0.252 0.260 0.173 0.176 0.0256 BSC 0° 8° 0.018 0.024 0.030 u d o r P e A O ) 8° 0.012 t e l o 0.169 ) s ( ct A2 A1 b O e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 7/8 M74HC266 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 8/8
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