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M74HC266TTR

M74HC266TTR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HC266TTR - QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC266TTR 数据手册
M74HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN s s s s s HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 266 DIP SOP TSSOP ORDER CODES PACKAGE TUBE M74HC266B1R M74HC266M1R T&R M74HC266RM13TR M74HC266TTR DIP SOP TSSOP DESCRIPTION The M74HC266 is an high speed CMOS QUAD EXCLUSIVE NOR GATE fabricated with silicon gate C2MOS technology. The M74HC266 has a high performance N-channel MOS transistor (OPEN DRAIN output). Input and Output ensure high noise immunity and stable outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HC266 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 5, 8, 12 2, 6, 9, 13 3, 4, 10, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H Z : High Impedance B L H L H Y Z L L Z ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V °C ns ns ns 2/8 M74HC266 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 IO=-20 µA IO=-20 µA IO=-20 µA IO=-4.0 mA IO=-5.2 mA IO=20 µA IO=20 µA IO=20 µA IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND TA = 25°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ± 0.1 ± 0.5 1 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5 10 Typ. Max. Value -40 to 85°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 ± 10 20 µA µA µA V V Max. -55 to 125°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL V VOH ICC AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25°C Min. Typ. 30 8 7 48 12 10 Max. 75 15 13 90 18 15 Value -40 to 85°C Min. Max. 95 19 16 115 23 20 -55 to 125°C Min. Max. 110 22 19 135 27 23 ns Unit tTHL Output Transition Time tPLZ tPZL Propagation Delay Time RL = 1 KΩ ns 3/8 M74HC266 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25°C Min. Typ. 5 20 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 4/8 M74HC266 Plastic DIP-14 MECHANICAL DATA mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 TYP. MAX. inch P001A 5/8 M74HC266 SO-14 MECHANICAL DATA DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 PO13G 6/8 M74HC266 TSSOP14 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0° 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8° 0.75 0° 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8° 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 7/8 M74HC266 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 8/8
M74HC266TTR
1. 物料型号: - M74HC266B1R(DIP封装) - M74HC266M1R(SOP封装) - M74HC266RM13TR(SOP封装,适用于T&R) - M74HC266TTR(TSSOP封装)

2. 器件简介: - M74HC266是一款高速CMOS四路异或非门,采用硅门C²MOS技术制造。 - 该器件具有高性能的N沟道MOS晶体管(开漏输出),输入和输出确保高抗噪性和稳定的输出。

3. 引脚分配: - 1, 5, 8, 12:1A到4A(数据输入) - 2, 6, 9, 13:1B到4B(数据输入) - 3, 4, 10, 11:1Y到4Y(数据输出) - 7:GND(地) - 14:VCC(正电源电压)

4. 参数特性: - 工作电压范围:2V至6V - 典型传播延迟:10ns(在6V电源电压下) - 最大功耗电流:1μA(在25°C环境温度下) - 最小输入噪声抗扰度:28%VCC - 所有输入都配备了防静电和瞬态过电压保护电路。

5. 功能详解: - M74HC266实现了四路异或非逻辑功能,具有开漏输出,可以吸收或源出高达25mA的电流。

6. 应用信息: - 由于其高速和低功耗特性,M74HC266适用于高速数字电路和低功耗应用。

7. 封装信息: - 提供DIP、SOP和TSSOP三种封装方式,以适应不同的应用需求和空间限制。
M74HC266TTR 价格&库存

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