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M74HC563M1R

M74HC563M1R

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HC563M1R - OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT HC563 INVERTING - HC573 NON INVERTING - STMicro...

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC563M1R 数据手册
M 54/74HC563 M54/74HC573 OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT HC563 INVERTING - HC573 NON INVERTING . . . . . . . . HIGH SPEED tPD = 13 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH= 6 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS563/573 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R DESCRIPTION The M54/74HC563 and M54HC573 are high speed CMOS OCTAL LATCH WITH 3-STATE OUTPUTS 2 fabricated with in silicon gate C MOS technology. These ICs archive the high speed operation similar to equivalent LSTTL while maintaning the CMOS low power dissipation. These 8 bit D-Type latches are controlled by a latch enable input (LE) and a output enable input (OE). While the LE input is held at a high level, the Q outputs will follow the data input precisely or inversely. When the LE is taken low, the Q outputs will be latched precisely or inversely at the logic level PIN CONNECTION (top view) HC563 HC573 of D input data. While the OE input is at low level, the eight outputs will be in a normal logic state (high or low logic level) and while high level the outpts will be in a high impedance state. The application designer has a choise of combination of inverting and non inverting outputs. The three state output configuration and the wide choise of outline make bus organized system simple. All inputs are equipped with protection circuits against discharge and transient excess voltage. HC563 HC573 October 1993 1/13 M54/M74HC563/573 I NPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION (HC563) PIN No 1 2, 3, 4, 5, 6, 7, 8, 9 12, 13, 14, 15, 16, 17, 18, 19 11 10 20 SYMBOL OE D0 to D7 Q0 to Q7 NAME AND FUNCTION 3 State output Enable Input (Active LOW) Data Inputs 3 State Latch Outputs PIN DESCRIPTION (HC573) PIN No 1 2, 3, 4, 5, 6, 7, 8, 9 12, 13, 14, 15, 16, 17, 18, 19 11 10 20 SYMBOL OE D0 to D7 Q0 to Q7 NAME AND FUNCTION 3 State output Enable Input (Active LOW) Data Inputs 3 State Latch Outputs LE GND V CC Latch Enable Input Ground (0V) Positive Supply Voltage LE GND VCC Latch Enable Input Ground (0V) Positive Supply Voltage IEC LOGIC SYMBOLS HC563 HC573 2/13 M54/M74HC563/573 T RUTH TABLE INPUTS OE H L L L LE X L H H D X X L H Q (HC573) Z NO CHANGE * L H OUTPUTS Q (HC563) Z NO CHANGE * H L X: DON’T CARE Z: HIGH IMPEDANCE *: Q/Q OUTPUTS ARE LATCHED AT THE TIME WHEN THE LE INPUT IS TAKEN LOW LOGIC LEVEL. LOGIC DIAGRAMS HC563 HC573 3/13 M54/M74HC563/573 A BSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage tothe device may occur. Functional operation under these conditions is not implied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Parameter Supply Voltage Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time M54HC Series M74HC Series VCC = 2 V VCC = 4.5 V VCC = 6 V Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C o C ns o 4/13 M54/M74HC563/573 D C SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 V OH High Level Output Voltage 2.0 4.5 6.0 4.5 VOL Low Level Output Voltage 6.0 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current 3 State Output Off State Current Quiescent Supply Current 6.0 6.0 VI = IO=-20 µA VIH or V IL IO=-6.0 mA IO=-7.8 mA VI = IO= 20 µA VIH or V IL IO= 6.0 mA IO= 7.8 mA VI = VCC or GND 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 4 TA = 25 oC 54HC and 74HC Min. Typ. Max. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5.0 40 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 ±10 80 µA µA µA V V 1.5 3.15 4.2 0.5 1.35 1.8 V V Unit VIH High Level Input Voltage Low Level Input Voltage V IL VI = VIH or VIL VO = VCC or GND 6.0 VI = VCC or GND 5/13 M54/M74HC563/573 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = t f = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 150 50 CL (pF) TA = 25 C 54HC and 74HC Min. Typ. Max. 25 60 7 6 50 15 13 60 20 17 42 14 12 57 19 16 RL = 1 KΩ 55 17 14 66 22 19 40 17 15 40 8 7 16 5 3 12 10 115 23 20 155 31 26 110 22 19 150 30 26 140 28 24 180 36 31 125 25 21 75 15 13 50 10 9 5 5 5 10 o tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time (LE - Q, Q) Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 75 90 15 13 145 29 25 195 39 33 140 28 24 190 38 32 175 35 30 225 45 38 155 31 26 95 19 16 65 13 11 5 5 5 10 18 15 175 35 30 235 47 40 165 33 28 225 45 38 210 42 36 270 54 46 190 38 32 110 22 19 75 15 13 5 5 5 10 Unit ns 50 ns 150 ns tPLH tPHL Propagation Delay Time (D - Q, Q) 50 ns 150 ns tPZL tPZH 3 State Output Enable Time 50 ns RL = 1 KΩ ns tPLZ tPHZ tW(L) tW(H) ts 3 State Output Disable Time Minimum Pulse Width Minimum Set-up Time Minimum Hold Time Input Capacitance Output Capacitance Power Dissipation Capacitance 50 RL = 1 KΩ ns 50 ns 50 ns th 50 5 10 for HC563 for HC573 49 51 ns pF pF pF CIN COUT CPD (*) (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC/8 (per Gate) The CPD when n pcs of FLIP-FLOP operate, can be gained by following equations: for HC563 CPD (TOTAL) = 33 + 16 x n [pF]; for HC573 CPD (TOTAL) = 33 + 18 x n [pF] 6/13 M54/M74HC563/573 SWITCHING CHARACTERISTICS TEST WAVEFORM tPLH, tPHL, (D - Q, Q) tPLH, tPHL, (LE - Q, Q) ts, th, tw tPLZ, tPZL The 1KΩ load resistors should be connected between outputs and VCC line and the 50pF load capacitors should be connected between outputsand GND line. All inputs except OE input should be connected to VCC line or GND line such that outputs will be in low logic level while OE input is held low. tPHZ, tPZH The 1KΩ load resistors and the 50pF load capacitors should be connected between each output and GND line. All inputs except OE input should be connected to VCC or GND line such that output will be in high logic level while OE input is held low. VCC GND 7/13 M54/M74HC563/573 TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 8/13 M54/M74HC563/573 Plastic DIP20 (0.25) MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.34 8.5 2.54 22.86 7.1 3.93 0.130 0.053 0.254 1.39 0.45 0.25 25.4 0.335 0.100 0.900 0.280 0.155 1.65 TYP. MAX. MIN. 0.010 0.055 0.018 0.010 1.000 0.065 inch TYP. MAX. DIM. P001J 9/13 M54/M74HC563/573 Ceramic DIP20 MECHANICAL DATA mm MIN. A B D E e3 F G I L M N1 P Q 7.9 2.29 0.4 1.27 0.22 0.51 0.5 22.86 2.79 0.55 1.52 0.31 1.27 0.090 0.016 0.050 0.009 0.020 3.3 1.78 0.020 0.900 0.110 0.022 0.060 0.012 0.050 TYP. MAX. 25 7.8 0.130 0.070 MIN. inch TYP. MAX. 0.984 0.307 DIM. 4° (min.), 15° (max.) 8.13 5.71 0.311 0.320 0.225 P057H 10/13 M54/M74HC563/573 SO20 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8° (max.) 0.291 0.19 13.00 10.65 0.35 0.23 0.50 45° (typ.) 0.496 0.393 0.050 0.450 0.299 0.050 0.029 0.512 0.419 0.10 mm TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012 P013L 11/13 M54/M74HC563/573 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 12/13 M54/M74HC563/573 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 13/13
M74HC563M1R
1. 物料型号: - M54/74HC563 和 M54/74HC573

2. 器件简介: - M54/74HC563 和 M54HC573 是高速CMOS八路D型锁存器,具有三态输出。这些集成电路采用硅门C²MOS技术制造,能够在保持CMOS低功耗的同时,实现类似LSTTL的高速操作。这些8位D型锁存器由锁存使能输入(LE)和输出使能输入(OE)控制。当LE输入保持高电平时,Q输出将精确或反向跟随数据输入。当LE降低时,Q输出将精确或反向锁定在D输入数据的逻辑电平上。当$\overline{OE}$输入为低电平时,八个输出将处于正常逻辑状态(高或低电平);当为高电平时,输出将处于高阻状态。

3. 引脚分配: - HC563和HC573的引脚功能如下: - 1: OE(三态输出使能输入,低电平有效) - 2-9: D0-D7(数据输入) - 10: GND(地) - 11: LE(锁存使能输入) - 12-19: Q0-Q7(三态锁存输出) - 20: Vcc(正电源电压)

4. 参数特性: - 工作电压范围:2V至6V - 输入高电平电压(VIH):1.5V至4.2V - 输入低电平电压(VIL):0.5V至1.8V - 输出高电平电压(VOH):1.9V至6.0V - 输出低电平电压(VOL):0V至0.4V - 锁定电流(Icc或IGND):±70mA - 功耗(PD):500mW(在65°C时降额至300mW)

5. 功能详解: - 当LE输入为高电平时,数据输入D将直接影响Q输出;当LE输入降低时,Q输出将锁定在D输入的逻辑电平上。OE输入控制输出的三态行为,低电平时输出正常逻辑电平,高电平时输出高阻。

6. 应用信息: - 设计师可以选择组合使用反转和非反转输出。三态输出配置和广泛的封装选择使得总线组织系统变得简单。

7. 封装信息: - 提供了多种封装选项,包括塑料DIP20、陶瓷DIP20、SO20和PLCC20等。
M74HC563M1R 价格&库存

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