M74HC640B1R

M54/74HC245/640/643 M54/74HC245/640/643 OCTAL BUS TRANSCEIVER (3-STATE): HC245 NON INVERTING HC640 INVERTING, HC643 INVERTING/NON INVERTING . . . . . . . . HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION o ICC = 4 µA (MAX.) at TA = 25 C HIGH NOISE IMMUNITY VNIH = VINL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 6 mA (MIN) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS245/640/643 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R DESCRIPTION The M54/74HC245, HC640 and HC643 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. Along with the low power dissipation and high noise 2 immunity of standards C MOS integrated circuit, it possesses the capability to drive 15 LSTTL loads. These IC’s are intended for two-way asynchronous communication between data buses, and the direction of data trasmission is determined by DIR input. The enable input (G) can be used to disable the device so that the buses are effectively isolated. PIN CONNECTION (top view) HC245 HC640 HC643 All input are equipped with protection circuits against static discharge and transient discharge and transient excess voltage. IT IS PROHIBITED TO APPLY A SIGNAL TO A BUS TERMINAL WHEN IT IS IN OUTPUT MODE AND WHEN A BUS THERMINAL IS FLOATING (HIGH IMPEDANCE STATE), IT IS REQUESTED TO FIX THE INPUT LEVEL BY MEANS OF EXTERNAL PULL DOWN OR PULL UP RESISTOR. October 1993 1/11 M54/M74HC245/640/643 I NPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2, 3, 4, 5, 6, 7, 8, 9 18, 17, 16, 15, 14, 13, 12, 11 19 10 20 SYMBOL DIR A1 to A8 B1 to B8 NAME AND FUNCTION Directional Control Data Inputs/Outputs Data Inputs/Outputs G GND VCC Output Enabel Input (Active LOW) Ground (0V) Positive Supply Voltage IEC LOGIC SYMBOLS HC245 HC640 HC643 TRUTH TABLE INPUT G L L H X: ”H” or ”L” Z: High impedance FUNCTION DIR L H X A BUS OUTPUT INPUT Z B BUS INPUT OUTPUT Z HC245 A=B B=A Z OUTPUT HC640 A=B B=A Z HC643 A=B B=A Z 2/11 M54/M74HC245/640/643 LOGIC DIAGRAM (HC640) NOTE: IN CASE OF HC245 OR HC643, INPUT INVERTERS MARKED* AT A BUS AND B BUS ARE ELIMINATED RESPECTIVELY ABSOLUTE MAXIMUM RATING Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o C o C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 3/11 M54/M74HC245/640/643 R ECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time M54HC Series M74HC Series VCC = 2 V VCC = 4.5 V VCC = 6 V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current 3 State Output Off State Current Quiescent Supply Current 6.0 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 4 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-6.0 mA IO=-7.8 mA VI = IO= 20 µA VIH or V IL IO= 6.0 mA IO= 7.8 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 ±5.0 40 µA 80 µA Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL V OH 4/11 M54/M74HC245/640/643 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 tPLZ tPHZ CIN CI/OUT CPD (*) Output Disable Time Input Capacitance Output Capacitance Power Dissipation Capacitance 2.0 4.5 6.0 CL (pF) TA = 25 C 54HC and 74HC Min. Typ. 25 7 6 33 12 10 48 16 14 48 16 14 63 21 18 37 17 15 5 13 39 37 Max. 60 12 10 90 18 15 120 24 20 150 30 26 180 36 31 150 30 26 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. 75 19 13 115 23 20 150 30 26 190 38 32 225 45 38 190 38 32 10 Min. Max. 90 18 15 135 27 23 180 36 31 225 45 38 270 54 46 225 45 38 10 Unit tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time 50 ns 50 ns 150 ns tPZL tPZH Output Enable Time 50 RL = 1KΩ ns 150 RL = 1KΩ ns 50 RL = 1KΩ DIR, G An, Bn ns pF pF pF HC245 HC640/643 (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/8 (per circuit) 5/11 M54/M74HC245/640/643 SWITCHING CHARACTERISTICS TEST WAVEFORM TEST CIRCUIT ICC (Opr.) C PD CALCULATION CPD is to be calculated with the following formula by using the measured value of ICC (Opr.) in the test circuit opposite. I CC (Opr.) CPD = f IN x VCC 6/11 M54/M74HC245/640/643 Plastic DIP20 (0.25) MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.34 8.5 2.54 22.86 7.1 3.93 0.130 0.053 0.254 1.39 0.45 0.25 25.4 0.335 0.100 0.900 0.280 0.155 1.65 TYP. MAX. MIN. 0.010 0.055 0.018 0.010 1.000 0.065 inch TYP. MAX. DIM. P001J 7/11 M54/M74HC245/640/643 Ceramic DIP20 MECHANICAL DATA mm MIN. A B D E e3 F G I L M N1 P Q 7.9 2.29 0.4 1.27 0.22 0.51 0.5 22.86 2.79 0.55 1.52 0.31 1.27 0.090 0.016 0.050 0.009 0.020 3.3 1.78 0.020 0.900 0.110 0.022 0.060 0.012 0.050 TYP. MAX. 25 7.8 0.130 0.070 MIN. inch TYP. MAX. 0.984 0.307 DIM. 4° (min.), 15° (max.) 8.13 5.71 0.311 0.320 0.225 P057H 8/11 M54/M74HC245/640/643 SO20 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8° (max.) 0.291 0.19 13.00 10.65 0.35 0.23 0.50 45° (typ.) 0.496 0.393 0.050 0.450 0.299 0.050 0.029 0.512 0.419 0.10 mm TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012 P013L 9/11 M54/M74HC245/640/643 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 10/11 M54/M74HC245/640/643 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11