M74HC75B1R

M74HC75B1R

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HC75B1R - 4 BIT D TYPE LATCH - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HC75B1R 数据手册
M74HC75 4 BIT D TYPE LATCH s s s s s s s HIGH SPEED : tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =2µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 75 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HC75B1R M74HC75M1R T&R M74HC75RM13TR M74HC75TTR DESCRIPTION The M74HC75 is an high speed CMOS 4 BIT D TYPE LATCH fabricated with silicon gate C2MOS technology. It contains two groups of 2 bit latches controlled by an enable input (G1•2 or G3•4). These two latch groups can be used in different circuits. Each latch has Q and Q outputs (1Q - 4Q and 1Q - 4Q). The data applied to the data input is transferred to the Q and Q outputs when the enable input is taken high and the outputs will follow the data input as long as the enable input is kept high. When the enable input is taken low, the information data applied to the data input is retained at the outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS August 2001 1/10 M74HC75 IINPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 14, 11, 8 2, 3, 6, 7 4 13 16, 15, 10, 9 12 5 SYMBOL 1Q to 4Q 1D to 4D G3 • 4 G1 • 2 1Q to 4Q GND VCC NAME AND FUNCTION Complementary Latch Outputs Data Inputs Latch Enable Input, latches 3 and 4 Latch Enable Input, latches 1 and 2 Latch Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE INPUTS D L H X G H H L OUTPUTS FUNCTION Q L H Qn Q H L Qn LATCH LOGIC DIAGRAM 2/10 M74HC75 ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V °C ns ns ns 3/10 M74HC75 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 IO=-20 µA IO=-20 µA IO=-20 µA IO=-4.0 mA IO=-5.2 mA IO=20 µA IO=20 µA IO=20 µA IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VCC or GND TA = 25°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ± 0.1 2 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 20 Typ. Max. Value -40 to 85°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 40 µA µA V V Max. -55 to 125°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL V VOH 4/10 M74HC75 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25°C Min. Typ. 25 7 6 36 12 10 40 13 11 18 6 6 Max. 75 15 13 110 22 19 125 25 21 75 15 13 50 10 9 25 5 4 Value -40 to 85°C Min. Max. 95 19 16 140 28 24 155 31 26 95 19 16 65 13 11 30 6 5 -55 to 125°C Min. Max. 110 22 19 165 33 28 190 38 32 110 22 19 75 15 13 40 8 7 ns Unit tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time (DATA - Q) tPLH tPHL Propagation Delay Time (G-Q) tW(H) Minimum Pulse Width (G) Minimum Set-up Time Minimum Hold Time ns ns ns ts ns th ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25°C Min. Typ. 5 30 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 5/10 M74HC75 TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) SWITCHING CHARACTERISTICS TEST WAWEFORM (f=1MHz; 50% duty cycle) 6/10 M74HC75 Plastic DIP-16 (0.25) MECHANICAL DATA mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 TYP. MAX. inch P001C 7/10 M74HC75 SO-16 MECHANICAL DATA DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8° (max.) 0.149 0.181 0.019 10 6.2 0.35 0.19 0.5 45° (typ.) 0.385 0.228 0.050 0.350 0.157 0.208 0.050 0.024 0.393 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 PO13H 8/10 M74HC75 TSSOP16 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0° 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8° 0.75 0° 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8° 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0080338D 9/10 M74HC75 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10
M74HC75B1R
1. 物料型号: - M74HC75

2. 器件简介: - M74HC75是一款高速CMOS 4位D型锁存器,采用硅门C2MOS技术制造。它包含两组2位锁存器,由使能端(G1·2或G3·4)控制。这些锁存器组可以在不同的电路中使用。每个锁存器具有Q和Q输出(1Q-4Q和1Q-4Q)。当使能输入为高时,Q和Q输出将跟随数据输入;当使能输入为低时,数据被锁存在输出端。所有输入都配备了防静电放电和瞬态过电压的保护电路。

3. 引脚分配: - 1,14,11,8:1Qto4(互补锁存器输出) - 2, 3,6,7:1Dto4(数据输入) - 4:G3·4(锁存器使能输入,控制3和4号锁存器) - 13:G1·2(锁存器使能输入,控制1和2号锁存器) - 16,15,10,9:1Qto4Q(锁存器输出) - 12:GND(地) - 5:Vcc(正电源电压)

4. 参数特性: - 工作电压范围:2V至6V - 最大功耗:500mW(65°C时,从65°C起每升高1°C降低10mW直至85°C) - 存储温度:-65°C至+150°C - 引脚温度(10秒):300°C

5. 功能详解: - 当使能输入为高时,数据输入会传输到锁存器输出;当使能输入为低时,数据被锁存在输出端。锁存器的Q和Q输出是互补的。

6. 应用信息: - 该芯片适用于需要高速锁存功能的数字电路,如数据缓冲、信号同步等。

7. 封装信息: - 提供了DIP、SOP、TSSOP等不同的封装类型,具体包括: - DIP M74HC75B1R - SOP M74HC75M1R M74HC75RM13TR - TSSOP M74HC75TTR
M74HC75B1R 价格&库存

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